SKM150GAR12T4

Absolute Maximum Ratings

Symbol Conditions Values Unit
IGBT
VCES 1200 V
IC Tc = 25 C 232 A
Tj = 175 C
Tc = 80 C 179 A
ICnom 150 A
ICRM ICRM = 3xICnom 450 A
VGES -20 ... 20 V
SEMITRANS2 VCC = 800 V
tpsc VGE 15 V Tj = 150 C 10 s
VCES 1200 V
Fast IGBT4 Modules Tj -40 ... 175 C
Inverse diode
IF Tc = 25 C 189 A
SKM150GAR12T4 Tj = 175 C
Tc = 80 C 141 A
IFnom 150 A
Features IFRM IFRM = 3xIFnom 450 A
IGBT4 = 4. Generation (Trench)IGBT IFSM tp = 10 ms, sin 180, Tj = 25 C 900 A
VCEsat with positive temperature Tj -40 ... 175 C
coefficient Freewheeling diode
High short circuit capability, self
IF Tc = 25 C 189 A
limiting to 6 x ICNOM Tj = 175 C
Soft switching 4. Generation CAL Tc = 80 C 141 A
diode (CAL4) IFnom 150 A
IFRM IFRM = 3xIFnom 450 A
Typical Applications
IFSM tp = 10 ms, sin 180, Tj = 25 C 900 A
DC/DC converter
Brake chopper Tj -40 ... 175 C
Switched reluctance motor Module
DC Motor It(RMS) 200 A
Tstg -40 ... 125 C
Remarks Visol AC sinus 50Hz, t = 1 min 4000 V
Case temperature limited to
Tc = 125C max, recomm. Characteristics
Top = -40 ... +150C, product
rel. results valid for Tj = 150 Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC = 150 A Tj = 25 C 1.8 2.05 V
VGE = 15 V
chiplevel Tj = 150 C 2.2 2.4 V
VCE0 Tj = 25 C 0.8 0.9 V
Tj = 150 C 0.7 0.8 V
rCE Tj = 25 C 6.7 7.7 m
VGE = 15 V
Tj = 150 C 10.0 10.7 m
VGE(th) VGE=VCE, IC = 6 mA 5 5.8 6.5 V
ICES VGE = 0 V Tj = 25 C 0.1 0.3 mA
VCE = 1200 V Tj = 150 C mA
Cies f = 1 MHz 9.3 nF
VCE = 25 V
Coes f = 1 MHz 0.58 nF
VGE = 0 V
Cres f = 1 MHz 0.51 nF
QG VGE = - 8 V...+ 15 V 850 nC
RGint Tj = 25 C 5.0

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by SEMIKRON Rev. 0 19.02.2009 1

SKM150GAR12T4
Characteristics
Symbol Conditions min. typ. max. Unit
td(on) VCC = 600 V Tj = 150 C 180 ns
tr IC = 150 A Tj = 150 C 42 ns
VGE = 15 V Tj = 150 C
Eon 19.2 mJ
RG on = 1
td(off) RG off = 1 Tj = 150 C 410 ns
tf di/dton = 3400 A/s Tj = 150 C 72 ns
Eoff di/dtoff = 1750 A/s Tj = 150 C 15.8 mJ
Rth(j-c) per IGBT 0.19 K/W

SEMITRANS 2 Inverse diode
VF = VEC IF = 150 A Tj = 25 C 2.14 2.46 V
VGE = 0 V
Tj = 150 C 2.07 2.38 V
Fast IGBT4 Modules chip
VF0 Tj = 25 C 1.3 1.5 V
Tj = 150 C 0.9 1.1 V
SKM150GAR12T4 rF Tj = 25 C 5.6 6.4 m
Tj = 150 C 7.8 8.5 m
IRRM IF = 150 A Tj = 150 C 120 A
Features di/dtoff = 3100 A/s T = 150 C
Qrr j 31.3 C
IGBT4 = 4. Generation (Trench)IGBT VGE = 15 V
VCEsat with positive temperature Err VCC = 600 V Tj = 150 C 13 mJ
coefficient Rth(j-c) per diode 0.31 K/W
High short circuit capability, self
limiting to 6 x ICNOM Freewheeling diode
Soft switching 4. Generation CAL VF = VEC IF = 150 A Tj = 25 C 2.14 2.46 V
diode (CAL4) VGE = 0 V
chip Tj = 150 C 2.07 2.38 V
Typical Applications VF0 Tj = 25 C 1.3 1.5 V
DC/DC converter Tj = 150 C 0.9 1.1 V
Brake chopper
rF Tj = 25 C 5.6 6.4 m
Switched reluctance motor
DC Motor Tj = 150 C 7.8 8.5 m
IRRM IF = 150 A Tj = 150 C 120 A
Qrr di/dtoff = 3100 A/s T = 150 C 31.3 C
j
Remarks VGE = 15 V
Case temperature limited to Err VCC = 600 V Tj = 150 C 13 mJ
Tc = 125C max, recomm. Rth(j-c) per Diode 0.31 K/W
Top = -40 ... +150C, product Module
rel. results valid for Tj = 150
LCE 30 nH
RCC'+EE' TC = 25 C 0.65 m
terminal-chip
TC = 125 C 1 m
Rth(c-s) per module 0.04 0.05 K/W
Ms to heat sink M6 3 5 Nm
Mt to terminals M5 2.5 5 Nm
Nm
w 160 g

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2 Rev. 0 19.02.2009 by SEMIKRON

SKM150GAR12T4

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)

Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)

Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

by SEMIKRON Rev. 0 19.02.2009 3

SKM150GAR12T4

Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG

Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic

Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge

4 Rev. 0 19.02.2009 by SEMIKRON

SKM150GAR12T4

Semitrans 2

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This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.

by SEMIKRON Rev. 0 19.02.2009 5