GD40PIT120C5S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD40PIT120C5S
1200V/40A PIM in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Maximum junction temperature 175oC
 Low inductance case
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

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GD40PIT120C5S IGBT Module

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT-inverter
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 72
IC A
@ TC=100oC 40
ICM Pulsed Collector Current tp=1ms 80 A
PD Maximum Power Dissipation @ Tj=175oC 280 W

Diode-inverter
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 40 A
IFM Diode Maximum Forward Current tp=1ms 80 A

Diode-rectifier
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IO Average Output Current 50Hz/60Hz,sine wave 40 A
IFSM Surge Forward Current VR=0V,tp=10ms,Tj=45oC 600 A
I2t I2t-value,VR=0V,tp=10ms,Tj=45oC 1800 A2s

IGBT-brake
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25oC 30
IC A
@ TC=100oC 15
ICM Pulsed Collector Current tp=1ms 30 A
PD Maximum Power Dissipation @ Tj=175oC 145 W

Diode-brake
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 15 A
IFM Diode Maximum Forward Current tp=1ms 30 A

Module
Symbol Description Values Unit
Maximum Junction Temperature(inverter,brake) 175 o
Tjmax C
Maximum Junction Temperature (rectifier) 150
o
Tjop Operating Junction Temperature -40 to +150 C
o
TSTG Storage Temperature Range -40 to +125 C
VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V

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GD40PIT120C5S IGBT Module

IGBT-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=40A,VGE=15V,
1.70 2.15
Tj=25oC
Collector to Emitter IC=40A,VGE=15V,
VCE(sat) 1.95 V
Saturation Voltage Tj=125oC
IC=40A,VGE=15V,
2.00
Tj=150oC
Gate-Emitter Threshold IC=1.00mA,VCE=VGE,
VGE(th) 5.2 6.0 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 100 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 4.14 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.12 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.31 μC
td(on) Turn-On Delay Time 145 ns
tr Rise Time 28 ns
td(off) Turn-Off Delay Time 194 ns
VCC=600V,IC=40A,
tf Fall Time 295 ns
RG=12Ω,VGE=±15V,
Turn-On Switching Tj=25oC
Eon 1.89 mJ
Loss
Turn-Off Switching
Eoff 2.31 mJ
Loss
td(on) Turn-On Delay Time 146 ns
tr Rise Time 30 ns
td(off) Turn-Off Delay Time 208 ns
VCC=600V,IC=40A,
tf Fall Time 466 ns
RG=12Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 2.31 mJ
Loss
Turn-Off Switching
Eoff 3.51 mJ
Loss
td(on) Turn-On Delay Time 148 ns
tr Rise Time 32 ns
td(off) Turn-Off Delay Time 212 ns
VCC=600V,IC=40A,
tf Fall Time 480 ns
RG=12Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 2.45 mJ
Loss
Turn-Off Switching
Eoff 3.69 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 160 A
VCEM≤1200V

©2019 STARPOWER Semiconductor Ltd. 2/9/2019 3/13 SX0D

GD40PIT120C5S IGBT Module

Diode-inverter Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=40A,VGE=0V,Tj=25oC 2.00 2.45
Diode Forward
VF IF=40A,VGE=0V,Tj=125oC 1.90 V
Voltage
IF=40A,VGE=0V,Tj=150oC 1.88
Qr Recovered Charge 1.8 μC
Peak Reverse VR=600V,IF=40A,
IRM 40 A
Recovery Current -di/dt=1100A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.93 mJ
Energy
Qr Recovered Charge 2.9 μC
Peak Reverse VR=600V,IF=40A,
IRM 47 A
Recovery Current -di/dt=1100A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 2.19 mJ
Energy
Qr Recovered Charge 3.2 μC
Peak Reverse VR=600V,IF=40A,
IRM 49 A
Recovery Current -di/dt=1100A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 2.56 mJ
Energy

Diode-rectifier Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward
VF IF=40A,VGE=0V,Tj=150oC 1.06 V
Voltage
IR Reverse Current Tj=150oC,VR=1600V 3.0 mA

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GD40PIT120C5S IGBT Module

IGBT-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=15A,VGE=15V,
1.70 2.15
Tj=25oC
Collector to Emitter IC=15A,VGE=15V,
VCE(sat) 1.95 V
Saturation Voltage Tj=125oC
IC=15A,VGE=15V,
2.00
Tj=150oC
Gate-Emitter Threshold IC=0.38mA,VCE=VGE,
VGE(th) 5.2 6.0 6.8 V
Voltage Tj=25oC
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25oC
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25oC
RGint Internal Gate Resistance 0 Ω
Cies Input Capacitance 1.55 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.04 nF
Capacitance
QG Gate Charge VGE=-15…+15V 0.12 μC
td(on) Turn-On Delay Time 59 ns
tr Rise Time 63 ns
td(off) Turn-Off Delay Time 201 ns
VCC=600V,IC=15A,
tf Fall Time 149 ns
RG=39Ω,VGE=±15V,
Turn-On Switching
Eon Tj=25oC 1.39 mJ
Loss
Turn-Off Switching
Eoff 0.85 mJ
Loss
td(on) Turn-On Delay Time 59 ns
tr Rise Time 70 ns
td(off) Turn-Off Delay Time 283 ns
VCC=600V,IC=15A,
tf Fall Time 196 ns
RG=39Ω,VGE=±15V,
Turn-On Switching Tj=125oC
Eon 1.87 mJ
Loss
Turn-Off Switching
Eoff 1.24 mJ
Loss
td(on) Turn-On Delay Time 59 ns
tr Rise Time 70 ns
td(off) Turn-Off Delay Time 288 ns
VCC=600V,IC=15A,
tf Fall Time 221 ns
RG=39Ω,VGE=±15V,
Turn-On Switching
Eon Tj=150oC 2.09 mJ
Loss
Turn-Off Switching
Eoff 1.39 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC=900V, 60 A
VCEM≤1200V

©2019 STARPOWER Semiconductor Ltd. 2/9/2019 5/13 SX0D

GD40PIT120C5S IGBT Module

Diode-brake Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IF=15A,VGE=0V,Tj=25oC 2.05 2.50
Diode Forward
VF IF=15A,VGE=0V,Tj=125oC 2.20 V
Voltage
IF=15A,VGE=0V,Tj=150oC 2.25
Qr Recovered Charge 0.7 μC
Peak Reverse VR=600V,IF=15A,
IRM 11 A
Recovery Current -di/dt=260A/μs,VGE=-15V
Reverse Recovery Tj=25oC
Erec 0.54 mJ
Energy
Qr Recovered Charge 2.4 μC
Peak Reverse VR=600V,IF=15A,
IRM 13 A
Recovery Current -di/dt=260A/μs,VGE=-15V
Reverse Recovery Tj=125oC
Erec 1.00 mJ
Energy
Qr Recovered Charge 2.6 μC
Peak Reverse VR=600V,IF=15A,
IRM 13 A
Recovery Current -di/dt=260A/μs,VGE=-15V
Reverse Recovery Tj=150oC
Erec 1.12 mJ
Energy

NTC Characteristics TC=25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100 oC,R100=493.3Ω -5 5 %
Power
P25 20.0 mW
Dissipation
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]
R2=R25exp[B25/80(1/T2-
B25/80 B-value 3411 K
1/(298.15K))]
R2=R25exp[B25/100(1/T2-
B25/100 B-value 3433 K
1/(298.15K))]

©2019 STARPOWER Semiconductor Ltd. 2/9/2019 6/13 SX0D

GD40PIT120C5S IGBT Module

Module Characteristics TC=25oC unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 60 nH
RCC’+EE’ 4.00
Module Lead Resistance,Terminal to Chip mΩ
RAA’+CC’ 3.00
Junction-to-Case (per IGBT-inverter) 0.535
Junction-to-Case (per Diode-inverter) 1.068
RthJC Junction-to-Case (per Diode-rectifier) 0.914 K/W
Junction-to-Case (per IGBT-brake) 1.029
Junction-to-Case (per Diode-brake) 1.760
Case-to-Heatsink (per IGBT-inverter) 0.267
Case-to-Heatsink (per Diode-inverter) 0.533
Case-to-Heatsink (per Diode-rectifier) 0.456
RthCH K/W
Case-to-Heatsink (per IGBT-brake) 0.513
Case-to-Heatsink (per Diode-brake) 0.878
Case-to-Heatsink (per Module) 0.020
M Mounting Torque, Screw:M5 3.0 6.0 N.m
G Weight of Module 200 g

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 GD40PIT120C5S IGBT Module

80 80

70 VGE=15V 70 VCE=20V

60 60

50 50
IC [A]

IC [A]
40 40

30 30

20 20
Tj=25℃ Tj=25℃
10 Tj=125℃ 10 Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]

Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics

7 12
Eon Tj=125℃ Eon Tj=125℃
Eoff Tj=125℃
6 Eoff
Eon Tj=150℃ 10 Tj=125℃
Eoff Tj=150℃ Eon Tj=150℃
5
VCC=600V 8
RG=12Ω
4 VGE=±15V
E [mJ]

E [mJ]

6
3
4
2
VCC=600V
1 2 IC=40A
VGE=±15V
0 0
0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120
IC [A] RG [Ω]

Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG

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 GD40PIT120C5S IGBT Module

90 1
Module IGBT
80

70

60

ZthJC [K/W]
50
IC [A]

0.1
40

30

20 RG=12Ω i: 1 2 3 4
VGE=±15V ri[K/W]: 0.0322 0.1766 0.1711 0.1551
τi[s]: 0.01 0.02 0.05 0.1
10 Tj=150oC

0 0.01
0 200 400 600 800 1000 1200 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance

80 4
Tj=25℃ Erec Tj=125℃
Tj=125℃
70 3.5 Erec Tj=150℃
Tj=150℃

60 3

50 2.5
E [mJ]
IF [A]

40 2

30 1.5

20 1 VCC=600V
RG=12Ω
10 0.5 VGE=-15V

0 0
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 60 70 80
VF [V] IF [A]

Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF

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 GD40PIT120C5S IGBT Module

3 10
Erec Tj=125℃
Erec Tj=150℃
2.5

Diode
2 1

ZthJC [K/W]
E [mJ]

1.5

1 0.1

VCC=600V i: 1 2 3 4
0.5 ri[K/W]: 0.0641 0.3525 0.3417 0.3097
IF=40A τi[s]: 0.01 0.02 0.05 0.1

VGE=-15V
0 0.01
0 20 40 60 80 100 120 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance

80 30
Tj=25℃
VGE=15V
Tj=150℃ 25
60
20
IC [A]
IF [A]

40 15

10
20
5 Tj=25℃
Tj=125℃
Tj=150℃
0 0
0.5 0.7 0.9 1.1 1.3 1.5 0 0.5 1 1.5 2 2.5 3 3.5
VF [V] VCE [V]

Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics

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 GD40PIT120C5S IGBT Module

30 100
Tj=25℃
Tj=125℃
25 Tj=150℃

20 10

R [kΩ]
IF [A]

15

10 1

0 0.1
0 0.5 1 1.5 2 2.5 3 0 30 60 90 120 150
VF [V] TC [oC]

Fig 13. Diode-brake-chopper Forward Characteristics Fig 14. NTC Temperature Characteristic

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GD40PIT120C5S IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

A 2:1

20 19 18 17 16 15 14 13 12 11 10
21
9
22 8

A 23 7

24
1 2 3 4 5 6

©2019 STARPOWER Semiconductor Ltd. 2/9/2019 12/13 SX0D

GD40PIT120C5S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
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application.

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or which concerns the specific application of our product, please contact the sales office,
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information on the types in question please contact the sales office, which is responsible for
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©2019 STARPOWER Semiconductor Ltd. 2/9/2019 13/13 SX0D