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Microwave 03

Impedance matching and tuning is important to maximize power transfer, improve signal-to-noise ratio, and reduce errors. It can be achieved using lossless matching networks with lumped elements like inductors and capacitors or transmission line stubs. Lumped element matching topologies include L-sections which can match loads inside or outside the characteristic impedance circle on the Smith chart. Single stub tuning topologies use either a shunt or series stub to match loads and are easy to fabricate but have narrower bandwidth than multi-section networks.
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0% found this document useful (0 votes)
87 views

Microwave 03

Impedance matching and tuning is important to maximize power transfer, improve signal-to-noise ratio, and reduce errors. It can be achieved using lossless matching networks with lumped elements like inductors and capacitors or transmission line stubs. Lumped element matching topologies include L-sections which can match loads inside or outside the characteristic impedance circle on the Smith chart. Single stub tuning topologies use either a shunt or series stub to match loads and are easy to fabricate but have narrower bandwidth than multi-section networks.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Impedance Matching and Tuning

1
Impedance
peda ce Matching
atc g and
a d Tuning
u g

• Impedance matching or tuning is important for the following


reasons:
 Maximum power is delivered
 Improve the SNR of the system
 Reduce amplitude and phase errors

in L

Figure 5.1 (p. 223)


A lossless network matching an arbitrary load impedance to a transmission line.

2
Impedance
peda ce Matching
atc g and
a d Tuning
u g

 Other Discussion
 Matching network usually use lossless components: L
L, C
C, transmission
line, transformer, …
 There are many possible solutions available
 Use Smith chart to find the optimal design
 F
Factors iin the
h selection
l i off a particular
i l matching
hi network:
k
 Complexity
 Bandwidth
 Implementation
 Adjustability

3
Matching
atc g with
w t Lumped
u ped Elements
e e ts

Figure 5.2 (p. 223)


i matching
L-section hi networks.
k (a)
( ) Network k for
f zL
inside the 1 + jx circle.
(b) Network for zL outside the 1 + jx circle.

4
Matching
atc g with
w t Lumped
u ped Elements
e e ts

• Analytic Solutions (ZL = RL + j XL)


Case 1 : z L is inside the 1  jx ( RL  Z 0 ) Case 2 : z L is outside the 1  jx ( RL  Z 0 )
For a matching condition : For a matching condition :
1 1 1
Z 0  jX   jB 
jB  1 RL  jX L  Z0 RL  j  X  X L 
Separating into Re/Im parts : Separating into Re/Im parts :
 B XRL  X L Z 0   RL  Z 0  BZ 0  X  X L   Z 0  RL
 
 X 1  BX L   BZ 0 RL  X L  X  X L   BZ 0 RL
Solution : Solution :
X L  RL Z 0 RL2  X L2  Z 0 RL X   RL Z 0  RL   X L
B
RL2  X L2 Z 0  RL  RL
B
1 X Z Z Z0
X  L 0 0
B RL BRL
5
Matching
atc g with
w t Lumped
u ped Elements
e e ts

jX jX - jB - jB
L L

C C
- jX - jX jB jB
Z Y
L C
C L
C L
L C
6
Matching
atc g with
w t Lumped
u ped Elements
e e ts

• Smith chart solutions


Case 1 : z L is inside the 1  jjx circle
1  jx circle

7
Matching
atc g with
w t Lumped
u ped Elements
e e ts

Case 2 : z L is outside the 1  jx circle


1  jb circle
i l

8
Matching
atc g with
w t Lumped
u ped Elements
e e ts

• Example 5.1 L-Section


Impedance Matching
Z L  200  j100 , Z 0  100 ,
f  500 MHz
Solution 1 :
z L  2  j1
y L  0.4  0.2 j   jb  j 0.3
y  0.4  0.5 j
z  1  j1.2  x  j1.2
b
C  0.92
0 92 pF
2 f Z 0
x Z0
L  38.8 nH
2 f
9
Matching
atc g with
w t Lumped
u ped Elements
e e ts

• Example 5.1 L-Section


Impedance Matching
Z L  200  j100 , Z 0  100 ,
f  500 MHz
Solution 1 :
z L  2  j1
y L  0.4  0.2 j   jb   j 0.7
y  0.4  0.5 j
z  1  j1.2  x   j1.2
1
C  2.61 ppF
2 f x Z 0
 Z0
L  46.1 nH
2 f b
10
Matching
atc g with
w t Lumped
u ped Elements
e e ts

• Example 5.1 L-Section Impedance Matching

Figure 5.3b (p. 227) (b) The two possible L-section matching circuits.
( )R
(c) Reflection
fl i coefficient
ffi i magnitudes
i d versus frequency
f for
f the
h matching
hi circuits
i i off (b).
(b)
11
Matching
atc g with
w t Lumped
u ped Elements
e e ts

• Lumped elements (l < /10): parasitic C/L, spurious resonances, fringing


fields, loss and perturbations caused by a ground plane.

 10 nH

 0.5 pF
 25 pF

12
Matching
atc g with
w t Lumped
u ped Elements
e e ts

Estimating Bandwidth :
single
g frequency
q y
 bandwidth
Approximate tuning may
be Better!!
Frequncy Contours :
Foster' s reactance theorem
 as f , jX of impedance
and jB of admittances 
 Impedances and admittances
on the Smith chart trace clockwise
arcs as frequency is increased.

13
Matching
atc g with
w t Lumped
u ped Elements
e e ts

• Constant Q circles:
X B
Q 
R G
1  Q 2  FR
 R 
 FR  0 
 RL 

14
Matching
atc g with
w t Lumped
u ped Elements
e e ts

Broadband 
Low Q matching
1  Q 2  n FR

Q=1 074
Q=1.074

15
Matching
atc g with
w t Lumped
u ped Elements
e e ts

One-section High Q Matching v. s. 3-sections Low Q Matching

16
Single-Stub
S g e Stub Tuning
u g
Yini   jB

(a) No Lumped Elements


(b) Easy to fabricate in
microstrip or stripline.

 Y0  jB

Z in   jX

 Z 0  jX

Figure
g 5.4 (p
(p. 229))
Single-stub tuning circuits.
(a) Shunt stub. (b) Series stub.

17
Single-Stub
S g e Stub Tuning
u g (S(Shunt)
u t)

• Example 5.2

Z L  60  j80  S.C.
S.C. y
Z 0  50 , f  2 GHz

z L  1.2  j1.6  y L  0.6  j 0.8


SWR circle t 1  jb circle
i l intersects
i t i l :
d1  0.11 for y1  1  j1.47
d 2  0.26 for y2  1  j1.47
 j1.47  S.C.  l1  0.095 
S C  l2  0.405 
 j1.47  S.C.
18
Single-Stub
S g e Stub Tuning
u g (S(Shunt)
u t)

• Example 5.2

19
Single-Stub
S g e Stub Tuning
u g (S(Shunt)
u t)
Z L  1 YL  RL  jX L 1 1
 RL  jX L   jZ 0t d  2 tan t, for t  0
 d : Z  Z0 
Z 0  j RL  jX L t  
  1   tan 1 t , for t  0
where t  tan d  2
Y  G  jB  1 Z t  Bs Bs   B 

where G  2
RL 1  t 2   For an open - circuited stub,
RL   X L  Z 0t 
2 lo 1  B   1 1  B 
 tan 1  s   tan  
RL2t  Z 0  X Lt  X L  Z 0t 
 2  Y0  2  Y0 
B

Z 0 RL2   X L  Z 0t 
2
 For a short - circuited stub,,
d is chosen so that G  Y0  1 Z 0 ls  1 1  Y0  1 1  Y0 
 
tan     tan  

t

X L  RL Z 0  RL   X L2 Z 0
2
for RL  Z 0
 2  Bs  2 B
If the resultant l is negative    2
RL  Z 0
t   X L 2Z 0 for
f RL  Z 0
20
Single-Stub
S g e Stub Tuning
u g (Se
(Series)
es)

• Example 5.3

Z L  100  j80 
Z 0  50 , O.C.
O.C. f  2 GHz z
z L  2  j1.6
SWR circle intersects 1  jx circle :
d1  0.120 for z1  1  j1.33
d 2  0.463 for z 2  1  j1.33
O C  l1  0.397 
 j1.33  O.C.
 j1.33  O.C.  l2  0.103 

21
Single-Stub
S g e Stub Tuning
u g (Se
(Series)
es)

• Example 5.3

22
Single-Stub
S g e Stub Tuning
u g (Se
(Series)
es)
YL  1 Z L  GL  jBL 1 1
GL  jBL   jY0t d  2 tan t, for t  0
d: Y  Y0 
Y0  j GL  jBL t  
  1   tan 1 t , for t  0
where t  tan d  2
Z  R  jX  1 Y t  X s X s   X 

where R  2

GL 1  t 2  For an open - circuited stub,
GL  BL  Y0t 
2 lo  1 1  Z 0  1 Z 
 tan    tan 1  0 
GL2t  Y0  BLt BL  Y0t 
 2  X s  2 X 
X

Y0 GL2  BL  Y0t 
2
 For a short - circuited stub,,
d is chosen so that R  Z 0  1 Y0 ls 1 1  X s   1 1  X 
 tan   
  tan  

t

BL  GL Y0  GL   BL2 Y0
2
for GL  Y0
 2  Z 0  2  Z0 
If the resultant l is negative    2
GL  Y0
t   BL 2Y0 for
f GL  Y0
23
Double-Stub
oub e Stub Tuning
u g

24
Double-Stub
oub e Stub Tuning
u g

Figure 5.7 (p. 236)


Double-stub tuning.
(a) Original circuit with the load an
arbitrary distance from the first stub.
(b) Equivalent-circuit with load at the
first stub.

25
Double-Stub
oub e Stub Tuning
u g

Forbidden region :
No intersection point
with Rotated 1  jb circle

 reduce d for reducing


forbidden region

d  0 or  / 2 : frequency
sensitive

d are generally chosen


as  / 8 or 3 / 8

26
Double-Stub
oub e Stub Tuning
u g

• Example 5.4
Z L  60  j80 , Z 0  50 
Stubs: open-circuited stubs,
d   / 8, f  2 GHz
Z L : a series resistor and capacitor
Solution:
zL  1.2  j1.6  yL  0.3  j 0.4
b1  1.314  l1  0.146
b1  0.114  l1  0.482
y2  1  j 3.38
y2  1  j1.38
1 38
b2  3.38  l2  0.204
b2  1.38 350
1 38  l2  00.350
27
Double-Stub
oub e Stub Tuning
u g
0.995 pF

0.204 0.146

0.995 pF

(c)
0.350 0.482
Figure 5.9b (p. 239)
(b) The two double-stub tuning solutions.
(c) Reflection coefficient magnitudes versus (b)
frequency for the tuning circuits of (b).
28
Double-Stub
oub e Stub Tuning
u g

Forbidden region :
• Analytic Solution st
4t 2 Y0  BLt  B1t 
2
Just to the left of the 1 stub :
0  1 1
Y1  GL  j BL  B1  Y 1 t
0
2
 
2 2

length d transmission line 1 t 2 Y0


 0  GL  Y0 2 
 just to the left of the 2 nd stub : t sin 2 d
GL  j BL  B1  Y0t  
Y0  1  t 2 GLY0  GL2t 2 
Y2  Y0 B1   BL 
Y0  j t GL  j BL  j B1  t
where t  tan d and Y0  1 / Z 0
 
 Y0 1  t 2 GLY0  GL2t 2  GLY0
reall part off Y2   Y0 B2 
GL t
1  t 2 Y0  BLt  B1t  lo 1 1  B 
G  GLY0 2 
2
2
0 For O.C. stub :  tan  
 2
L
t t  Y0 
1 t 2  4t 2 Y0  BLt  B1t  
2
ls  1 1  Y0 
 GL  Y0 1  1   For S.C. stub :  tan  
2
2t 
 
Y0 1  t
2 2

2
  2 B
29
Thee Quarter-Wave
Qua te Wave Transformer
a so e

1

 4Z 0 Z L  2
1  2
sec 
 Z L  Z 0  
Figure 5.10 (p. 241) A single-section quarter- Z L  Z0
wave matching
t hi transformer.
t f   0  4 att the
th design
d i  cos for
f  near  2
frequency f0. 2 Z0Z L
Z L  j Z1t
Z in  Z1
Z1  j Z L t
where t  tan  l  tan     2 , at f 0 
Z in  Z 0 Z L  Z0
 
Z in  Z 0 Z L  Z 0  j 2t Z 0 Z L
Figure 5.11 (p. 242) Approximate behavior of
Z1
2
 Z0Z L  the reflection coefficient magnitude for a single-
section quarter-wave transformer operating near
its design frequency.
30
Thee Quarter-Wave
Qua te Wave Transformer
a so e

 
Bandwidth :   2   m 
2 
2
1  2 Z0Z L 
 2  1  sec 
m  Z L  Z0 
 
m 2 Z0Z L
or cos m 
1  m2 Z L  Z 0
If we assume TEM lines, then
2 f v p  f
 l 
v p 4 f0 2 f0
Fi
Figure 5.12 ( 243) Reflection
5 12 (p. R fl ti coefficient
ffi i t
f 4 m 4   2 Z0Z L  magnitude versus frequency for a single-
1
 2  2  cos  m
 section quarter-wave matching transformer
f0    1  m2 Z L  Z 0  with various load mismatches.
mismatches

31
Thee Theory
eo y of
o Small
S a Reflections
e ect o s

• Single-Section Transformer   1  T12T213e 2 j  T12T2132 2 e 4 j  



 1  T12T213e  2 j
  e
n 0
n n  2 jn
2 3


1

n 0
x  n

1 x
, for x  1

T12T213e 2 j
  1 
1  2 3e 2 j
1  3e  2 j

1  13e 2 j
 1  3e  2 j

Figure 5.13 (p. 244) Partial reflections and transmissions


on a single
single-section
section matching transformer.
transformer
32
Thee Theory
eo y of
o Small
S a Reflections
e ect o s

• Multisection Transformer
Figure 5.14 (p 245) Partial
5 14 (p.
reflection coefficients for a
multisection matching transformer.

Z  Z0    0  1e 2 j  2e 4 j    N e 2 jN


0  1
Z1  Z 0 Transformer can be made symmetrical :

n 
Z n 1  Z n      
   e  jN 0 e jN  e  jN  1 e j  N 2   e  j  N 2   
Z n 1  Z n    2e  jjN 0 cos N  1 cosN  2    n cos N  2n 
N 
ZL  ZN    1 2 N / 2 , for N even
ZL  ZN
   2e  jN 0 cos N  1 cosN  2    n cos N  2n 
Z n : vary monotonically
   ( N 1) / 2 cos , for N odd
 Given
Gi  , design
d i Z1 , Z 2 ,  Z N
33
Thee Bode-Fano
ode a o Criterion
C te o
Circuit Bode - Fano limit

Figure 5.22 (p. 262) The Bode-Fano limits for RC and RL loads matched with passive and
lossless networks (ω0 is the center frequency of the matching bandwidth). (a) Parallel RC.
(b) S
Series
i RC.
RC
34
Thee Bode-Fano
ode a o Criterion
C te o
Circuit Bode - Fano limit

Figure 5.22 (p. 262) The Bode-Fano limits for RC and RL loads matched with passive and
lossless networks (ω0 is the center frequency of the matching bandwidth). (c) Parallel RL.
(d) S
Series
i RL.
RL
35
Thee Bode-Fano
ode a o Criterion
C te o

Figure 5.23 (p. 263)


Illustrating the Bode-Fano criterion.
(a) A possible reflection coefficient
response.
(b) Nonrealizable and realizable
reflection coefficient responses
responses.

1. Given RC :
 
 m 
2. m  0, unless   0
 m  0 only
l at a finite
fi i
number of frequencies
3. R or C 
   or m 
high Q load is harder to match
36

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