Chapter 5

Dilla University
College of Engineering
School of Electrical and Computer Engineering
Optics and Optical Communication (ECEg-4291)
Chapter Five
Optical Receivers
Optical Receivers
Outline
• Introduction
• Optical Detection Principles
• Quantum Efficiency
• Responsivity
• Long-wavelength Cutoff
• Common Photodetectors
• Receiver Structure
• Receiver Noise
Semester-II, 2017/18 2
Introduction
• The detector is an essential component of an optical fiber
communication system and is one of the crucial elements which
dictate the overall system performance.
• The fundamental mechanism behind the photodetection process

is optical absorption.
• Its function is to convert the received optical signal into an

electrical signal, which is then amplified before further
processing.
• Therefore when considering signal attenuation along the link,

the system performance is determined at the detector.
Introduction Cont’d…..
• Improvement of detector characteristics and performance thus
allows the installation of fewer repeater stations and lowers both
the capital investment and maintenance costs.
• The role the detector plays demands that it must satisfy very
stringent requirements for performance and compatibility.
• The following criteria define the important performance and

compatibility requirements for detectors which are generally
similar to the requirements for sources.
1. High sensitivity at the operating wavelengths: The first-
generation systems have wavelengths between 0.8 and 0.9µm
(compatible with AlGaAs laser and LED emission lines).
However, considerable advantage may be gained at the
detector from second-generation sources with operating
wavelengths above 1.1µm as both fiber attenuation and
dispersion are reduced.
2. High fidelity: The response of the photodetector must be linear

with regard to the optical signal over a wide range.
3. Large electrical response to the received optical signal: The
photodetector should produce a maximum electrical signal for
a given amount of optical power, i.e. , the quantum efficiency
should be high.
4. Short response time to obtain a suitable bandwidth: Current

single-channel, single mode fiber systems extend up to many
tens of gigahertz. However, it is apparent that future
wavelength division multiplexed systems will operate in the
multiple terahertz (1012 Hz) range, and possibly above.
5. A minimum noise introduced by the detector: Dark currents,
leakage currents and shunt conductance must be low. Also the
gain mechanism within either the detector or associated
circuitry must be of low noise.
6. Stability of performance characteristics: Ideally, the

performance characteristics of the detector should be
independent of changes in ambient conditions. However, the
detectors currently favored (photodiodes) have characteristics
(sensitivity, noise, internal gain) which vary with temperature.
7. Small size: The physical size of the detector must be small for
efficient coupling to the fiber and to allow easy packaging with
the following electronics.
8. Low bias voltages: Ideally the detector should not require

excessive bias voltages or currents.
9. High reliability: The detector must be capable of continuous

stable operation at room temperature for many years.
10. Low cost: Economic considerations are often of prime

importance in any large scale communication system application.
Optical Detection Principles
• The basic detection process in an intrinsic absorber is illustrated
in the figure below which shows a p-n photodiode.
Fig. Operation of the p-n photodiode
Optical Detection Principles Cont’d……
• This device is reverse biased and the electric field developed
across the p-n junction sweeps mobile carriers (holes and
electrons) to their respective majority sides (p- and n-type
material).
• A depletion region or layer is therefore created on either side of

the junction.
• This barrier has the effect of stopping the majority carriers

crossing the junction in the opposite direction to the field.
• However, the field accelerates minority carriers from both sides
to the opposite side of the junction, forming the reverse leakage
current of the diode.
• Thus intrinsic conditions are created in the depletion region.
• A photon incident in or near the depletion region of this device

which has an energy greater than or equal to the bandgap energy
Eg of the fabricating material (i.e. hf ≥ Eg) will excite an
electron from the valence band into the conduction band.
• This process leaves an empty hole in the valence band and is
known as the photogeneration of an electron–hole (carrier) pair.
• Carrier pairs so generated near the junction are separated and

swept (drift) under the influence of the electric field to produce
a displacement current in the external circuit in excess of any
reverse leakage current.
• The depletion region must be sufficiently thick to allow a large

fraction of the incident light to be absorbed in order to achieve
maximum carrier pair generation.
Quantum Efficiency
• The quantum efficiency η is defined as the fraction of incident
photons which are absorbed by the photodetector and generate
electrons which are collected at the detector terminals:
number of electrons collected re
η= ⇒η= (1)
number of incident photons rp
where rp is the incident photon rate (photons per second) and re is the
corresponding electron rate (electrons per second)
• One of the major factors which determines the quantum

efficiency is the absorption coefficient of the semiconductor
material used within the photodetector.
Quantum Efficiency Cont’d……
• The quantum efficiency is generally less than unity as not all of
the incident photons are absorbed to create electron–hole pairs.
• Furthermore, it should be noted that it is often quoted as a

percentage (e.g. a quantum efficiency of 75% is equivalent to
75 electrons collected per 100 incident photons).
• Finally, in common with the absorption coefficient, the

quantum efficiency is a function of the photon wavelength and
must therefore only be quoted for a specific wavelength.
Responsivity
• The expression for quantum efficiency does not involve photon
energy and therefore the responsivity R is often of more use
when characterizing the performance of a photodetector.
• It is defined as:
Ip
R= ( A /W ) (2)
Po
where :
I p is the output photocurrent in amperes and
Po is the incident optical power in watts

(i.e. output optical power from the fiber)
Responsivity Cont’d…….
• The responsivity is a useful parameter as it gives the transfer
characteristic of the detector (i.e. photocurrent per unit incident
optical power).
• The relationship for responsivity may be developed to include

quantum efficiency.
• The energy of a photon is E = hf. Thus, the incident photon rate

rp may be written in terms of incident optical power and the
photon energy as:
Po
rp = (3)
hf
• In equation (1), the electron rate is given by:
re = ηrp (4)
• Substituting equation (3) into equation (4), we obtain:
ηPo
re = (5)
hf
• Therefore, the output photocurrent is:

η Po e
Ip = (6)
hf
where e is the charge on an electron
• Thus from equation (2), the responsivity may be written as:
ηe
R= (7)
hf
• Equation (7) is a useful relationship for responsivity which may

be developed a stage further to include the wavelength of the
incident light.
• The frequency f of the incident photons is related to their

wavelength λ and the velocity of light in air c by:
c
f = (8)
λ
• Substituting equation (8) into equation (7), a final expression
for the responsivity is given by:
η eλ
R= (9)
hc
• It may be noted that the responsivity is directly proportional to

the quantum efficiency at a particular wavelength.
Example On Quantum Efficiency & Responsibity
Example-1:
When 3 × 1011 photons each with a wavelength of 0.85µm are

incident on a photodiode, on average 1.2 × 1011 electrons are
collected at the terminals of the device. Determine the quantum
efficiency and the responsivity of the photodiode at 0.85µm.
Example On Quantum Efficiency & Responsibity…..
Solution:
number of electrons collected
Quantum efficiency =
number of incident photons
1.2 *10 11
= 11
= 0.4
3 *10
The quantum efficiency of the photodiode at 0.85 m is 40%.
η eλ
Responsivi ty R =
hc
0.4 *1.1602 *10 −19 * 0.85 *10 −6
= −34 8
= 0.274 A / W
6.626 *10 * 2.998 *10
The responsivi ty of the photodiode at 0.85 µm is 0.27 A / W .
Example On Quantum Efficiency & Responsibity
Example-2:
A photodiode has a quantum efficiency of 65% when photons of

energy 1.5 × 10-19 J are incident upon it.
a. At what wavelength is the photodiode operating?
b. Calculate the incident optical power required to obtain a

photocurrent of 2.5µA when the photodiode is operating as
described above.
Solution:
a. The photon energy is given by :
hc
E = hf =
λ
hc 6.626 *10 −34 * 2.998 *108

⇒λ= = −19
= 1.32 µm
E 1.5 *10
∴ The photodiode is operating at a wavelengt h of 1.32 µ m.
Solution:
b. The responsivi ty is given by :
ηe 0.65 * 1.602 * 10 −19

R= = −19
= 0.694 A /W
hf 1.5 *10
Also, we have :
Ip Ip
R= ⇒ Po =
Po R
25 *10 −6
= = 3.60 µW
0.694
∴ The incident optical power required is 3.60 µ W .
Long-wavelength Cutoff
• It is essential when considering the intrinsic absorption process
that the energy of incident photons be greater than or equal to
the bandgap energy Eg of the material used to fabricate the
photodetector.
• Therefore, the photon energy:
hc
≥ Eg
λ
• Rearranging the above equation, we get:

hc
λ≤
Eg
Long-wavelength Cutoff Cont’d…….
• Thus the threshold for detection, commonly known as the long-

wavelength cutoff point λc, is:
hc
λc =
Eg
• The above expression allows the calculation of the longest

wavelength of light to give photodetection for the various
semiconductor materials used in the fabrication of detectors.
Example On Long-wavelength Cutoff
Example-3:
GaAs has a bandgap energy of 1.43eV at 300 K. Determine the

wavelength above which an intrinsic photodetector fabricated from
this material will cease to operate.
Solution:
The long wavelength cutoff is given by :
hc 6..626 *10 −34 * 2.998 *10 8

λc = = −19
= 0.867 µm
Eg 1.43 *1.602 *10
∴ The GaAs photodetector will cease to operate above 0.87 µ m.
Common Photodetectors
• Semiconductor photodiodes can be classified into two broad

categories:
i. Semiconductor photodiodes without internal gain: generate

a single electron-hole pair per absorbed photon.
Example: The p-n photodiode, The p-i-n photodiode
i. Semiconductor photodiodes with internal gain: generate

multiple electron-hole pairs per absorbed photon
Example:The p-n photodiode,
The p-n Photodiode
Fig. The p-n photodiode showing depletion and diffusion regions

The p–i–n (or PIN) photodiode
Fig. The p-i-n photodiode

Avalanche Photodiodes
Fig. Avalanche photodiode showing high electric field (gain) region
Receiver Structure
Receiver Noise
• Optical receivers convert incident optical power Po into electric
current through a photodiode.
• The relation Ip = RPo assumes that such a conversion is noise

free.
• However, this is not the case even for a perfect receiver.
• Two fundamental noise mechanisms, shot noise and thermal

noise, lead to fluctuations in the current even when the incident
optical signal has a constant power.
• The relation Ip = RPo still holds if we interpret Ip as the average

current.
The
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Dilla University

Optics and Optical Communication (ECEg-4291)

• The fundamental mechanism behind the photodetection process

• Its function is to convert the received optical signal into an

• Therefore when considering signal attenuation along the link,

• The following criteria define the important performance and

2. High fidelity: The response of the photodetector must be linear

4. Short response time to obtain a suitable bandwidth: Current

6. Stability of performance characteristics: Ideally, the

8. Low bias voltages: Ideally the detector should not require

9. High reliability: The detector must be capable of continuous

10. Low cost: Economic considerations are often of prime

Fig. Operation of the p-n photodiode

• A depletion region or layer is therefore created on either side of

• This barrier has the effect of stopping the majority carriers

• Thus intrinsic conditions are created in the depletion region.

• A photon incident in or near the depletion region of this device

• Carrier pairs so generated near the junction are separated and

• The depletion region must be sufficiently thick to allow a large

• One of the major factors which determines the quantum

• Furthermore, it should be noted that it is often quoted as a

• Finally, in common with the absorption coefficient, the

Po is the incident optical power in watts

• The relationship for responsivity may be developed to include

• The energy of a photon is E = hf. Thus, the incident photon rate

• Substituting equation (3) into equation (4), we obtain:

• Therefore, the output photocurrent is:

• Equation (7) is a useful relationship for responsivity which may

• The frequency f of the incident photons is related to their

• It may be noted that the responsivity is directly proportional to

When 3 × 1011 photons each with a wavelength of 0.85µm are

A photodiode has a quantum efficiency of 65% when photons of

a. At what wavelength is the photodiode operating?

b. Calculate the incident optical power required to obtain a

a. The photon energy is given by :

hc 6.626 *10 −34 * 2.998 *108

∴ The photodiode is operating at a wavelengt h of 1.32 µ m.

ηe 0.65 * 1.602 * 10 −19

• Therefore, the photon energy:

• Rearranging the above equation, we get:

• Thus the threshold for detection, commonly known as the long-

• The above expression allows the calculation of the longest

GaAs has a bandgap energy of 1.43eV at 300 K. Determine the

hc 6..626 *10 −34 * 2.998 *10 8

∴ The GaAs photodetector will cease to operate above 0.87 µ m.

• Semiconductor photodiodes can be classified into two broad

i. Semiconductor photodiodes without internal gain: generate

Example: The p-n photodiode, The p-i-n photodiode

i. Semiconductor photodiodes with internal gain: generate

Example:The p-n photodiode,

Fig. The p-n photodiode showing depletion and diffusion regions

Fig. The p-i-n photodiode

Fig. Avalanche photodiode showing high electric field (gain) region

• The relation Ip = RPo assumes that such a conversion is noise

• However, this is not the case even for a perfect receiver.

• Two fundamental noise mechanisms, shot noise and thermal

• The relation Ip = RPo still holds if we interpret Ip as the average

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hc 6.626 10 −34 2.998 *108

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