Fast Recovery DSEI 60 IFAVM = 69 A

Epitaxial Diode (FRED) VRRM = 200 V

trr = 35 ns

C
TO-247 AD
VRSM VRRM Type A

V V
C
200 200 DSEI 60-02A A C

A = Anode, C = Cathode

Symbol Test Conditions Maximum Ratings Features

IFRMS TVJ = TVJM 98 A ●

International standard package
IFAVM ÿÿ① TC = 85°C; rectangular, d = 0.5 69 A JEDEC TO-247 AD
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 800 A ●
Planar passivated chips
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 600 A
●
Very short recovery time
t = 8.3 ms (60 Hz), sine 650 A
●
Extremely low switching losses
●
Low IRM-values
TVJ = 150°C; t = 10 ms (50 Hz), sine 540 A ●
Soft recovery behaviour
t = 8.3 ms (60 Hz), sine 580 A ●
Epoxy meets UL 94V-0
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s
t = 8.3 ms (60 Hz), sine 1770 A2s
Applications
TVJ = 150°C; t = 10 ms (50 Hz), sine 1460 A2s
t = 8.3 ms (60 Hz), sine 1410 A2s ●
Antiparallel diode for high frequency
TVJ -40...+150 °C switching devices
TVJM 150 °C
●
Anti saturation diode
Tstg -40...+150 °C ●
Snubber diode
●
Free wheeling diode in converters
Ptot TC = 25°C 150 W
and motor control circuits
Md Mounting torque 0.8...1.2 Nm ●
Rectifiers in switch mode power
Weight 6 g
supplies (SMPS)
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
Symbol Test Conditions Characteristic Values ●
Ultrasonic cleaners and welders
typ. max.

IR TVJ = 25°C VR = VRRM 50 mA Advantages

TVJ = 25°C VR = 0.8 • VRRM 40 mA
TVJ = 125°C VR = 0.8 • VRRM 11 mA
●
High reliability circuit operation
●
Low voltage peaks for reduced
VF IF = 60 A; TVJ = 150°C 0.88 V protection circuits
TVJ = 25°C 1.08 V ●
Low noise switching
VT0 For power-loss calculations only 0.70 V ●
Low losses
rT TVJ = TVJM 4.0 mW ●
Operating at lower temperature or
RthJC 0.75 K/W space saving by reduced cooling
RthCK 0.25 K/W
RthJA 35 K/W
trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C 35 50 ns
IRM VR = 100 V; IF = 60 A; -diF/dt = 200 A/ms 8 10 A
L £ 0.05 mH; TVJ = 100°C

① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
036

IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-2

 DSEI 60, 200V

160 0.8 30
A TVJ= 100°C TVJ= 100°C
VR = 100V A VR = 100V
140 µC
Qr 25
120 0.6 IRM
IF
IF= 35A 20
100 IF= 70A
IF=140A IF= 35A
80 0.4 15 IF= 70A
TVJ=150°C IF=140A
60
TVJ=100°C 10
40 0.2
5
20
TVJ=25°C
0 0.0 0
0.0 0.4 0.8 1.2 V 10 100 A/ms 1000 0 200 400 600 A/ ms 1000
800
VF -diF/dt -diF/dt
Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr Fig. 3 Typ. peak reverse current IRM
versus -diF/dt versus -diF/dt

1.6 70 5 2.5
ns TVJ= 100°C TVJ= 100°C
VR = 100V V IF = 100A µs
1.4 60
Kf 4 2.0
trr VFR
tfr
1.2 50
tfr VFR
3 1.5
1.0 40
IF=35A
0.8 30 IF=70A
IRM 2 1.0
IF=140A
0.6 20
Qr 1 0.5
0.4 10

0.2 0 0 0.0
0 40 80 120 °C 160 0 200 400 600 A/ ms
800 1000 0 200 400 600 ms
A/800
TVJ -diF/dt diF/dt
Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Typ. recovery time trr Fig. 6 Typ peak forward voltage
versus TVJ versus -diF/dt VFR and tfr versus diF/dt

1.0
Dimensions Dim. Millimeter Inches
K/W Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
0.8
B 20.80 21.46 0.819 0.845
ZthJC C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
0.6
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
0.4
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
0.2
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
DSEI 60-02 N 2.2 2.54 0.087 0.102
0.0
0.001 0.01 0.1 1 s 10
t
Fig. 7 Transient thermal impedance junction to case
839

© 2000 IXYS All rights reserved 2-2

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