DS 35 DSI 35

DSA 35 DSAI 35

Rectifier Diode VRRM = 1200-1800 V

Avalanche Diode IF(RMS) = 80 A
IF(AV)M = 49 A

DO-203 AB
VRSM V(BR)min ① VRRM Anode Cathode
V V V on stud on stud C
DS
A
DSI
1300 - 1200 DS 35-12A DSI 35-12A DSA DSAI
A C
1300 1300 1200 DSA 35-12A DSAI 35-12A
1700 1750 1600 DSA 35-16A DSAI 35-16A
1900 1950 1800 DSA 35-18A DSAI 35-18A 1/4-28UNF

① Only for Avalanche Diodes

A = Anode C = Cathode

Symbol Test Conditions Maximum Ratings Features

●
International standard package,
IF(RMS) TVJ = TVJM 80 A JEDEC DO-203 AB (DO-5)
IF(AVM) Tcase = 100°C; 180° sine 49 A ●
Planar glassivated chips
PRSM DSA(I) types, TVJ = TVJM, tp = 10 µs 11 kW
Applications
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 650 A ●
High power rectifiers
VR = 0 t = 8.3 ms (60 Hz), sine 690 A ●
Field supply for DC motors
TVJ = TVJM t = 10 ms (50 Hz), sine 600 A ●
Power supplies
VR = 0 t = 8.3 ms (60 Hz), sine 640 A
Advantages
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 2100 A2s ●
Space and weight savings
VR = 0 t = 8.3 ms (60 Hz), sine 2000 A2s ●
Simple mounting
TVJ = TVJM t = 10 ms (50 Hz), sine 1800 A2s ●
Improved temperature and power
VR = 0 t = 8.3 ms (60 Hz), sine 1700 A2s cycling
●
Reduced protection circuits
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+180 °C
Dimensions in mm (1 mm = 0.0394")
Md Mounting torque 4.5-5.5 Nm
40-49 lb.in.
Weight 15 g

Symbol Test Conditions Characteristic Values

IR TVJ = TVJM; VR = VRRM ≤ 4 mA
VF IF = 150 A; TVJ = 25°C ≤ 1.55 V
VT0 For power-loss calculations only 0.85 V
rT TVJ = TVJM 4.5 mΩ
RthJC DC current 1.05 K/W
RthJH DC current 1.25 K/W
dS Creepage distance on surface 4.05 mm
dA Strike distance through air 3.9 mm
a Max. allowable acceleration 100 m/s2

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions
20170323a

© 2017 IXYS All rights reserved 1-1

This datasheet can be found on https://www.jotrin.com

 DS 35 DSI 35
DSA 35 DSAI 35

250 1000 10000

50Hz, 80% VRRM VR = 0 V
A A
900 A2s
8000
typ. lim.
200 800 6000
IF
IFSM 700 I2t
150 600 4000
TVJ = 45°C
TVJ= 180°C 500
TVJ= 25°C
100 400
TVJ = 180°C
300 2000
TVJ = 45°C
50 200

100 TVJ = 180°C

0 0 1000
0.5 1.0 1.5 2.0 V 10-3 10-2 10-1 s 100 1 2 3 8 910
4 5 6 7 ms
VF t t
Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I2t versus time (1-10 ms)
IFSM: crest value, t: duration
100 60
W A
RthJA : 50
80
1.5 K/W IF(AV)M
PF
1.9 K/W 40
60 2.3 K/W

3.9 K/W 30

40
DC
20
180° sin
120°
20 60°
30° 10

0 0
0 20 40 60 80 A 00 50 100 150 °C 200 0 40 80 120 160 °C 200
IF(AV)M Tamb Tcase
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180° sine
2.0

K/W RthJH for various conduction angles d:

1.6
d RthJH (K/W)
ZthJH DC 1.25
1.2 180° 1.37
120° 1.47
60° 1.74
0.8 30° 2.08

Constants for ZthJH calculation:

0.4
i Rthi (K/W) ti (s)
1 0.10 0.0012
0.0 2 0.25 0.1181
10-3 10-2 10-1 100 101 s 102 3 0.70 0.6540
t 4 0.20 2.0
Fig. 6 Transient thermal impedance junction to heatsink

20170323a

© 2017 IXYS All rights reserved 2-1