BQ 24074
BQ 24074
BQ 24074
9
PGOOD
CHG
TS 1
TMR
EN1
ILM
CE
14
12
16
4
PACK-
1.18kW 1.13kW
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
bq24072, bq24073, bq24074, bq24075, bq24079
SLUS810K – SEPTEMBER 2008 – REVISED MARCH 2015 www.ti.com
Table of Contents
1 Features .................................................................. 1 9.3 Feature Description................................................. 15
2 Applications ........................................................... 1 9.4 Device Functional Modes........................................ 27
3 Description ............................................................. 1 10 Application and Implementation........................ 29
4 Revision History..................................................... 2 10.1 Application Information.......................................... 29
10.2 Typical Application ................................................ 29
5 Description (continued)......................................... 4
10.3 System Examples ................................................. 33
6 Device Comparison Table..................................... 4
11 Power Supply Recommendations ..................... 35
7 Pin Configuration and Functions ......................... 5
12 Layout................................................................... 35
8 Specifications......................................................... 6
12.1 Layout Guidelines ................................................. 35
8.1 Absolute Maximum Ratings ..................................... 6
12.2 Layout Example .................................................... 36
8.2 ESD Ratings.............................................................. 6
12.3 Thermal Considerations ........................................ 37
8.3 Recommended Operating Conditions....................... 7
8.4 Thermal Information .................................................. 7 13 Device and Documentation Support ................. 38
13.1 Device Support...................................................... 38
8.5 Dissipation Ratings ................................................... 7
13.2 Related Links ........................................................ 38
8.6 Electrical Characteristics........................................... 8
13.3 Trademarks ........................................................... 38
8.7 Typical Characteristics ............................................ 10
13.4 Electrostatic Discharge Caution ............................ 38
9 Detailed Description ............................................ 13
13.5 Glossary ................................................................ 38
9.1 Overview ................................................................. 13
9.2 Functional Block Diagram ....................................... 14 14 Mechanical, Packaging, and Orderable
Information ........................................................... 38
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Deleted package type code from Device Comparison Table. See the POA at the end of the data sheet. .......................... 4
• Changed ICHG Battery fast charge current range MIN specification from "150 mA" to "100 mA"........................................... 9
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
• Changed resistor value from "3 kΩ" to "8.9 kΩ" in the Pin Functions table ISET Description paragraph.............................. 5
• Changed RISET spec MAX value from "3000" to "8900" in the Recommended Operating Conditions table. ......................... 7
• Changed resistor value from "3 kΩ" to "5.9 kΩ" in the Battery Charging section paragraph. .............................................. 21
• Changed ICHG Battery fast charge current range MIN specification from "300 mA" to "150 mA"........................................... 9
• Added ESD human body model specification to Abs Maximum Ratings table. ..................................................................... 6
5 Description (continued)
Additionally, the regulated system input enables instant system turn-on when plugged in even with a totally
discharged battery. The power-path management architecture also lets the battery supplement the system
current requirements when the adapter cannot deliver the peak system currents, thus enabling the use of a
smaller adapter.
The battery is charged in three phases: conditioning, constant current, and constant voltage. In all charge
phases, an internal control loop monitors the IC junction temperature and reduces the charge current if the
internal temperature threshold is exceeded. The charger power stage and charge current sense functions are
fully integrated. The charger function has high accuracy current and voltage regulation loops, charge status
display, and charge termination. The input current limit and charge current are programmable using external
resistors.
OPTIONAL
PART NUMBER (1) (2)
VOVP VBAT(REG) VOUT(REG) VDPPM MARKING
FUNCTION
bq24072 6.6 V 4.2 V VBAT + 225 mV VO(REG) – 100 mV TD CKP
bq24073 6.6 V 4.2 V 4.4 V VO(REG) – 100 mV TD CKQ
bq24074 10.5 V 4.2 V 4.4 V VO(REG) – 100 mV ITERM BZF
bq24075 6.6 V 4.2 V 5.5 V 4.3 V SYSOFF CDU
bq24079 6.6 V 4.1 V 5.5 V 4.3 V SYSOFF ODI
(1) For all available packages, see the orderable addendum at the end of the datasheet
(2) This product is RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for
use in specified lead-free soldering processes. In addition, this product uses package materials that do not contain halogens, including
bromine (Br) or antimony (Sb) above 0.1% of total product weight.
RGT Package
16 Pins
Top View
SYSOFF
ITERM
ISET
ISET
TMR
ISET
TMR
TMR
TD
IN
IN
IN
16 15 14 13 16 15 14 13 16 15 14 13
TS 1 12 ILIM TS 1 12 ILIM TS 1 12 ILIM
BAT 2 bq24072 11 OUT BAT 2 11 OUT BAT 2
bq24075
11 OUT
bq24073 bq24074
BAT 3 10 OUT BAT 3 10 OUT BAT 3 bq24079 10 OUT
CE 4 9 CHG CE 4 9 CHG CE 4 9 CHG
5 6 7 8 5 6 7 8 5 6 7 8
EN2
EN1
PGOOD
VSS
EN2
EN1
PGOOD
VSS
EN2
EN1
PGOOD
VSS
Pin Functions
PIN
I/O DESCRIPTION
NAME '72, '73 '74 '75, '79
Charger Power Stage Output and Battery Voltage Sense Input. Connect BAT to the positive terminal of the
BAT 2, 3 2, 3 2, 3 I/O
battery. Bypass BAT to VSS with a 4.7-μF to 47-μF ceramic capacitor.
Charge Enable Active-Low Input. Connect CE to a high logic level to place the battery charger in standby
mode. In standby mode, OUT is active and battery supplement mode is still available. Connect CE to a low
CE 4 4 4 I
logic level to enable the battery charger. CE is internally pulled down with approximately 285 kΩ. Do not
leave CE unconnected to ensure proper operation.
Open-Drain Charging Status Indication Output. CHG pulls to VSS when the battery is charging. CHG is high
CHG 9 9 9 O impedance when charging is complete and when charger is disabled. Connect CHG to the desired logic
voltage rail using a 1kΩ-100kΩ resistor, or use with an LED for visual indication.
EN1 6 6 6 I Input Current Limit Configuration Inputs. Use EN1 and EN2 control the maximum input current and enable
USB compliance. See Table 2 for the description of the operation states. EN1 and EN2 are internally pulled
EN2 5 5 5 I down with ≉285 kΩ. Do not leave EN1 or EN2 unconnected to ensure proper operation.
Adjustable Current Limit Programming Input. Connect a 1100-Ω to 8-kΩ resistor from ILIM to VSS to program
ILIM 12 12 12 I the maximum input current (EN2=1, EN1=0). The input current includes the system load and the battery
charge current. Leaving ILIM unconnected disables all charging.
Input Power Connection. Connect IN to the external DC supply (AC adapter or USB port). The input operating
range is 4.35 V to 6.6 V (bq24072, bq24073, bq24075, and bq24079) or 4.35 V to 10.5 V (bq23074). The
IN 13 13 13 I
input can accept voltages up to 26 V without damage but operation is suspended. Connect bypass capacitor
1 μF to 10 μF to VSS.
Fast Charge Current Programming Input. Connect a 590-Ω to 8.9-kΩ resistor from ISET to VSS to program
the fast charge current level. Charging is disabled if ISET is left unconnected. While charging, the voltage at
ISET 16 16 16 I/O
ISET reflects the actual charging current and can be used to monitor charge current. See Charge Current
Translator for more details.
Termination Current Programming Input. Connect a 0-Ω to 15-kΩ resistor from ITERM to VSS to program the
ITERM – 15 – I termination current. Leave ITERM unconnected to set the termination current to the default 10% termination
threshold.
System Supply Output. OUT provides a regulated output when the input is below the OVP threshold and
above the regulation voltage. When the input is out of the operation range, OUT is connected to VBAT except
OUT 10, 11 10, 11 10, 11 O
when SYSOFF is high (bq24075 and bq24079 only). Connect OUT to the system load. Bypass OUT to VSS
with a 4.7-μF to 47-μF ceramic capacitor.
Open-drain Power Good Status Indication Output. PGOOD pulls to VSS when a valid input source is
PGOOD 7 7 7 O detected. PGOOD is high-impedance when the input power is not within specified limits. Connect PGOOD to
the desired logic voltage rail using a 1-kΩ to 100-kΩ resistor, or use with an LED for visual indication.
System Enable Input. Connect SYSOFF high to turn off the FET connecting the battery to the system output.
When an adapter is connected, charging is also disabled. Connect SYSOFF low for normal operation.
SYSOFF – – 15 I
SYSOFF is internally pulled up to VBAT through a large resistor (approximately 5 MΩ). Do not leave SYSOFF
unconnected to ensure proper operation.
Termination Disable Input. Connect TD high to disable charger termination. Connect TD to VSS to enable
charger termination. TD is checked during startup only and cannot be changed during operation. See the TD
TD 15 – – I
section in this datasheet for a description of the behavior when termination is disabled. TD is internally pulled
down to VSS with approximately 285 kΩ. Do not leave TD unconnected to ensure proper operation.
EN1/EN2 Settings
EN2 EN1 MAXIMUM INPUT CURRENT INTO IN PIN
0 0 100 mA. USB100 mode
0 1 500 mA. USB500 mode
1 0 Set by an external resistor from ILIM to VSS
1 1 Standby (USB suspend mode)
8 Specifications
8.1 Absolute Maximum Ratings (1)
over the 0°C to 125°C operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
IN (with respect to VSS) –0.3 28 V
BAT (with respect to VSS) –0.3 5 V
VI Input Voltage
OUT, EN1, EN2, CE, TS, ISET, PGOOD, CHG, ILIM,
–0.3 7 V
TMR, ITERM, SYSOFF, TD (with respect to VSS)
II Input Current IN 1.6 A
OUT 5 A
Output Current
IO BAT (Discharge mode) 5 A
(Continuous)
BAT (Charging mode) 1.5 (2) A
Output Sink Current CHG, PGOOD 15 mA
TJ Junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
(2) The IC operational charging life is reduced to 20,000 hours, when charging at 1.5A and 125°C. The thermal regulation feature reduces
charge current if the IC’s junction temperature reaches 125°C; thus without a good thermal design the maximum programmed charge
current may not be reached.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) The IC operational charging life is reduced to 20,000 hours, when charging at 1.5A and 125°C. The thermal regulation feature reduces
charge current if the IC’s junction temperature reaches 125°C; thus without a good thermal design the maximum programmed charge
current may not be reached.
(2) Use a 1% tolerance resistor for RISET to avoid issues with the RISET short test when using the maximum charge current setting.
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is
connected to the ground plane by a 2 × 3 via matrix.
(1) These numbers set trip points of 0°C and 50°C while charging, with 3°C hysteresis on the trip points, with a Vishay Type 2 curve NTC
with an R25 of 10 kΩ.
600 0.7
IL = 1 A
500 0.6
0.4
300
0.3
200
0.2
100 0.1
0 0
120 125 130 135 140 145 0 25 100 125
50 75
Temperature - oC TJ - Junction Temperature - °C
4.2
VO - Output Voltage - V
80 VBAT = 3 V
4
60 3.8
VBAT = 3.9 V
3.6
40
3.4
20 3.2
0 3
0 25 50 75 100 125 2 2.5 3 3.5 4 4.5
TJ - Junction Temperature - °C VBAT - Battery Voltage - V
VO - Output Voltage - V
VO - Output Voltage - V
3.74 4.40
3.72
3.70 4.38
3.68
4.35
3.66
3.64 4.33
3.62
4.30
3.60 0 50 75 100 125
0 25 50 75 100 125 25
TJ - Junction Temperature - °C TJ - Junction Temperature - °C
5.75 4.210
VIN = 6 V,
5.70 IL = 1 A
5.65 4.205
5.60
4.200
5.55
5.50 4.195
5.45
5.40 4.190
5.35
4.185
5.30
5.25 4.180
0 25 50 75 100 125 0 5 10 15 20 25 30
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
10.65
VOVP - Output Voltage Threshold - V
6.60 10.50
10.45
10.35
VI Falling
6.50 10.30
10.25
6.45 10.20
0 25 50 75 100 125 0 25 50 75 100 125
TJ - Junction Temperature - °C TJ - Junction Temperature - °C
Figure 9. bq24072/ 73/ 75/ 79 Figure 10. bq24074 Overvoltage Protection Threshold vs
Overvoltage Protection Threshold vs Temperature Temperature
400
0.99
300
200
0.97
USB100
100
0 0.95
5 6 7 8 9 10 3 3.2 3.4 3.6 3.8 4 4.2
VI - Input Voltage - V VBAT - Battery Voltage - V
Figure 11. bq24074 Input Current Limit vs Input Voltage Figure 12. Fastcharge Current vs Battery Voltage
310 105
RISET = 3 kW RISET = 900 W
104
305
IBAT - Fast Charge Current - A
103
295 100
99
290
98
97
285
96
280 95
3 3.2 3.4 3.6 3.8 4 4.2 2 2.2 2.4 2.6 2.8 3
VBAT - Battery Voltage - V VBAT - Battery Voltage - V
Figure 13. Fastcharge Current vs Battery Voltage Figure 14. Precharge Current vs Battery Voltage
31.5
RISET = 3 kW
31
IBAT - Precharge Current - A
30.5
30
29.5
29
28.5
2 2.2 2.4 2.6 2.8 3
VBAT - Battery Voltage - V
9 Detailed Description
9.1 Overview
The bq2407x devices are integrated Li-Ion linear chargers and system power path management devices targeted
at space-limited portable applications. The device powers the system while simultaneously and independently
charging the battery. This feature reduces the number of charge and discharge cycles on the battery, allows for
proper charge termination and enables the system to run with a defective or absent battery pack. This feature
also allows instant system turn-on even with a totally discharged battery. The input power source for charging the
battery and running the system can be an AC adapter or a USB port. The devices feature Dynamic Power Path
Management (DPPM), which shares the source current between the system and battery charging, and
automatically reduces the charging current if the system load increases. When charging from a USB port, the
input dynamic power management (VIN-DPM) circuit reduces the input current if the input voltage falls below a
threshold, thus preventing the USB port from crashing. The power-path architecture also permits the battery to
supplement the system current requirements when the adapter cannot deliver the peak system currents.
250mV
VO(SC1) OUT-SC1 VBAT OUT-SC2
t DGL(SC2)
Q1
IN OUT
225mV
VIN-LOW Precharge ISET
USB100 2.25V
Fastcharge
USB500 TJ
ILIM VREF- ILIM
USB-susp TJ(REG)
Short Detect
V O(REG) V DPPM
V OUT
Q2
~3V I TERM-floating
tDGL1(LOWV)
tDGL2(LOWV)
tDGL(TERM)
tDGL(RCH)
VIN
INTC
VBAT + VIN-DT BAT-SC
tDGL(NO-IN)
V HOT
TS
t DGL(PGOOD) Charge Control t DGL(TS)
V UVLO
VCOLD
V OVP
tBLK(OVP)
VDIS(TS)
EN1 USB Suspend TD
EN2
(bq24072,
CE bq24073)
9.3.2 Power On
When VIN exceeds the UVLO threshold, the bq2407x powers up. While VIN is below VBAT + VIN(DT), the host
commands at the control inputs (CE, EN1 and EN2) are ignored. The Q1 FET connected between IN and OUT
pins is off, and the status outputs CHG and PGOOD are high impedance. The Q2 FET that connects BAT to
OUT is ON. (If SYSOFF is high, Q2 is off). During this mode, the VOUT(SC2) circuitry is active and monitors for
overload conditions on OUT.
Once VIN rises above VBAT + VIN(DT), PGOOD is driven low to indicate the valid power status and the CE, EN1,
and EN2 inputs are read. The device enters standby mode if (EN1 = EN2 = HI) or if an input overvoltage
condition occurs. In standby mode, Q1 is OFF and Q2 is ON so OUT is connected to the battery input. (If
SYSOFF is high, FET Q2 is off). During this mode, the VOUT(SC2) circuitry is active and monitors for overload
conditions on OUT.
When the input voltage at IN is within the valid range: VIN > UVLO AND VIN > VBAT + VIN(DT) AND VIN < VOVP, and
the EN1 and EN2 pins indicate that the USB suspend mode is not enabled [(EN1, EN2) ≠ (HI, HI)] all internal
timers and other circuit blocks are activated. The device then checks for short-circuits at the ISET and ILIM pins.
If no short conditions exists, the device switches on the input FET Q1 with a 100mA current limit to checks for a
short circuit at OUT. When VOUT is above VSC, the FET Q1 switches to the current limit threshold set by EN1,
EN2 and RILIM and the device enters into the normal operation. During normal operation, the system is powered
by the input source (Q1 is regulating), and the device continuously monitors the status of CE, EN1 and EN2 as
well as the input voltage conditions.
PGOOD = Hi-Z
CHG = Hi-Z
BATTFET ON
Yes
PGOOD = Low
Yes
EN1=EN2=1
No
Yes
ILIM or ISET short?
No
Begin Startup
I IN(MAX) 100mA
Yes
VOUT short?
No
Input Current
Limit set by EN1
and EN2
No
CE = Low
Yes
Begin Charging
10 μC 50 μC 20 mA/div
100 μs/div
The input current limit selection is controlled by the state of the EN1 and EN2 pins as shown in the EN1/EN2
Settings table in Pin Configuration and Functions . When using the resistor-programmable current limit, the input
current limit is set by the value of the resistor connected from the ILIM pin to VSS, and is given by the equation:
IIN-MAX = KILIM/RILIM (1)
The input current limit is adjustable up to 1.5 A. The valid resistor range is 1.1 kΩ to 8 kΩ.
IOUT
200mA/div
Input collapses
VIN
(5V)
Input regulated to VIN_DPM 500mV/div
USB500 Current Limit
200mA/div
IBAT
4 ms/div
Figure 18. VIN-DPM Waveform
1200 mA
A
900 mA
IOUT
400 mA
0 mA
900 mA
500 mA
IIN
0 mA
500 mA
IBAT
0 mA
-300 mA
Figure 19. bq24072 DPPM and Battery Supplement Modes (VOREG = VBAT + 225 mV, VBAT = 3.6 V)
1200 mA
A
900 mA
IOUT
400 mA
0 mA
900 mA
500 mA
IIN
0 mA
500 mA
IBAT
0 mA
-300 mA
~3.6 V
Figure 20. bq24073 DPPM and Battery Supplement Modes (VOREG = 4.4 V, VBAT = 3.6 V)
VBAT(REG)
IO(CHG)
Battery Current
Battery Voltage
VLOWV
CHG = Hi-z
I(PRECHG)
I(TERM)
In the pre-charge phase, the battery is charged at with the pre-charge current (IPRECHG). Once the battery voltage
crosses the VLOWV threshold, the battery is charged with the fast-charge current (ICHG). As the battery voltage
reaches VBAT(REG), the battery is held at a constant voltage of VBAT(REG) and the charge current tapers off as the
battery approaches full charge. When the battery current reaches ITERM, the CHG pin indicates charging done by
going high-impedance.
Note that termination detection is disabled whenever the charge rate is reduced because of the actions of the
thermal loop, the DPPM loop or the VIN(LOW) loop.
The value of the fast-charge current is set by the resistor connected from the ISET pin to VSS, and is given by
the equation:
ICHG = KISET/RISET (2)
The charge current limit is adjustable up to 1.5 A. The valid resistor range is 590 Ω to 5.9 kΩ. If ICHG is
programmed as greater than the input current limit, the battery will not charge at the rate of ICHG, but at the
slower rate of IIN(MAX) (minus the load current on the OUT pin, if any). In this case, the charger timers will be
proportionately slowed down.
Begin Charging
Yes
Battery short detected?
No
Start Precharge
CHG = Low
No
No tPRECHARGE
VBAT > VLOWV
Elapsed?
Yes
End Charge
Start Fastcharge
Flash CHG
ICHARGE set by ISET
No
Yes
End Charge
Charge Done Flash CHG
CHG = Hi-Z
TD = Low
(’72, ’73 Only) No
(’74, ’75 = YES)
Yes
Termination Reached
BATTFET Off
Wait for VBAT < VRCH
No
VBAT < VRCH
Yes
No
Battery Detected?
Yes
Note that this feature monitors the die temperature of the bq2407x. This is not synonymous with ambient
temperature. Self heating exists due to the power dissipated in the IC because of the linear nature of the battery
charging algorithm and the LDO associated with OUT. A modified charge cycle with the thermal loop active is
shown in Figure 23. Battery termination is disabled during thermal regulation.
VO(REG)
IO(CHG)
Battery Voltage
Battery Current
V(LOWV) HI-z
I(PRECHG)
I(TERM)
TJ(REG)
IC Junction Temperature, TJ
The allowed temperature range for 103AT-2 type thermistor is 0°C to 50°C. However, the user may increase the
range by adding two external resistors. See Figure 24 for the circuit details. The values for Rs and Rp are
calculated using the following equations:
æ 2 ì VH ´ VC üö
-(RTH + RTC ) ± çç (RTH +RTC ) - 4 íRTH ´ RTC + ´ (RTC - RTH )ý ÷
(VH - VC ) ´ ITS ÷
è î þø
Rs =
2 (8)
VH ´ (R TH + RS )
Rp =
ITS ´ (R TH + RS ) - VH
where
• RTH: Thermistor Hot Trip Value found in thermistor data sheet
• RTC: Thermistor Cold Trip Value found in thermistor data sheet
• VH: IC's Hot Trip Threshold = 0.3 V nominal
• VC: IC's Cold Trip Threshold = 2.1 V nominal
• ITS: IC's Output Current Bias = 75 µA nominal
• NTC Thermsitor Semitec 103AT-4 (9)
Rs and Rp 1% values were chosen closest to calculated values in Table 3.
RHOT and RCOLD are the thermistor resistance at the desired hot and cold temperatures, respectively. The
temperature window cannot be tightened more than using only the thermistor connected to TS, it can only be
extended.
I NTC
bq2407x
RS
+
TS TEMP
PACK+
VCOLD
RP
+ PACK-
VHOT
NOTE
Figure 25 to Figure 29 are not to scale.
VOVP
VOVP - Vhys(OVP)
VIN
Typical Input Voltage
t < tDGL(OVP) Operating Range
VBAT + VIN(DT)
VBAT + VIN(DT) - Vhys(INDT)
UVLO
UVLO - Vhys(UVLO)
PGOOD tDGL(PGOOD)
tDGL(OVP) tDGL(NO-IN)
tDGL(PGOOD)
VBAT tDGL1(LOWV)
VLOWV
ICHG
Fast-Charge Fast-Charge
Pre-Charge
IPRE-CHG
Pre-Charge
VBAT
VRCH
Re-Charge
t < tDGL(RCH) tDGL(RCH)
VBAT - VOUT
Recover
VO(SC2)
VCOLD
VCOLD - Vhys(COLD)
Suspend
Charging
t < tDGL(TS) tDGL(TS) Resume
Charging
VTS
VHOT - Vhys(HOT)
VHOT
Figure 29. Battery Pack Temperature Sensing – TS Pin. Battery Temperature Increasing
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
R4 R5
1.5 kW 1.5 kW
SYSTEM
Adaptor
PGOOD
CHG
DC+ IN OUT
C1 C2
GND
1 mF 4.7 mF
VSS
bq24072 HOST
bq24073 EN2
EN1
TS
TD
CE
BAT
C3
TEMP
PACK+ 4.7 mF
ISET
TMR
ILM
R1 R2 R3
PACK-
46.4 kW 1.18 kW 1.13 kW
10.2.2.2 Calculations
VIN
5 V/div VCHG 5 V/div
Charging Initiated
VOUT
4.4 V 1 A/div
500 mV/div
VBAT
IBAT
3.6 V
VPGOOD 5 V/div
VBAT 2 V/div
Battery Inserted
IBAT 500 mA/div
Battery Detection Mode
4 ms/div 400 ms/div
RLOAD = 10 Ω
VCHG
5 V/div
IOUT 500 mA/div
1 A/div
Figure 33. Battery Detection Figure 34. Entering and Exiting DPPM Mode
Battery Removed
1 A/div
IOUT
IOUT 1 A/div
VOUT
3.825 V 200 mV/div
VOUT VBAT
4.4 V 500 mV/div 3.6 V
VBAT Tracking to VBAT +225 mV
3.8 V
1 ms/div 1 ms/div
RLOAD = 25 Ω to 4.5 Ω RLOAD = 20 Ω to 4.5 Ω
Figure 35. Entering and Exiting Battery Supplement Mode Figure 36. Entering and Exiting Battery Supplement Mode
bq24074 bq24072
VCE
5 V/div VIN 10 V/div
VCHG
5 V/div
VOUT
4.4 V
VBAT 1 V/div VBAT
3.6 V 4.2 V 500 mV/div
Mandatory Precharge
IBAT 500 mA/div IBAT 1 A/div
10 ms/div 40 ms/div
VIN = 6 V to 15 V RLOAD = 10 Ω
VOUT VBAT
5.5 V 4V
2 V/div
VBAT 2 V/div
4V VOUT
Figure 39. System ON/OFF With Input Connected Figure 40. System ON/OFF With Input Not Connected
VIN = 6 V VIN = 0 V
bq24075, bq24079 bq24075, bq24079
R4 R5
1.5 kW 1.5 kW
SYSTEM
Adaptor
CHG
PGOOD
DC+ IN OUT
C2
GND C1 4.7 mF
1 mF
VSS
bq24074
EN2
EN1
TS
TMR
CE
BAT
C3
PACK+ 4.7mF
ITERM
TEMP
ISET
ILM
PACK-
R1 R2 R3
4.12 kW 1.18 kW 1.13 kW
R4 R5
1.5 kW 1.5 kW
SYSTEM
Adaptor
PGOOD
CHG
DC+ IN OUT
C1 C2
GND
1 mF 4.7 mF
VSS
bq24075 HOST
bq24079 EN2
EN1
TS
SYSOFF
CE
BAT
C3
PACK+ 4.7 mF
TEMP
ISET
TMR
ILM
PACK- R1 R2 R3
46.4 kW 1.18 kW 1.13 kW
Figure 42. Using bq24075 or bq24079 to Disconnect the Battery From the System
12 Layout
13.3 Trademarks
All trademarks are the property of their respective owners.
13.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 8-Sep-2017
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
BQ24072RGTR ACTIVE VQFN RGT 16 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKP
& no Sb/Br)
BQ24072RGTT ACTIVE VQFN RGT 16 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKP
& no Sb/Br)
BQ24072RGTTG4 ACTIVE VQFN RGT 16 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKP
& no Sb/Br)
BQ24073RGTR ACTIVE VQFN RGT 16 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKQ
& no Sb/Br)
BQ24073RGTRG4 ACTIVE VQFN RGT 16 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKQ
& no Sb/Br)
BQ24073RGTT ACTIVE VQFN RGT 16 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKQ
& no Sb/Br)
BQ24073RGTTG4 ACTIVE VQFN RGT 16 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKQ
& no Sb/Br)
BQ24074RGTR ACTIVE VQFN RGT 16 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 (BZF, NXK)
& no Sb/Br)
BQ24074RGTRG4 ACTIVE VQFN RGT 16 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 (BZF, NXK)
& no Sb/Br)
BQ24074RGTT ACTIVE VQFN RGT 16 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 (BZF, NXK)
& no Sb/Br)
BQ24075RGTR ACTIVE VQFN RGT 16 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CDU
& no Sb/Br)
BQ24075RGTRG4 ACTIVE VQFN RGT 16 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CDU
& no Sb/Br)
BQ24075RGTT ACTIVE VQFN RGT 16 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CDU
& no Sb/Br)
BQ24075RGTTG4 ACTIVE VQFN RGT 16 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CDU
& no Sb/Br)
BQ24079RGTR ACTIVE VQFN RGT 16 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ODI
& no Sb/Br)
BQ24079RGTT ACTIVE VQFN RGT 16 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ODI
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 8-Sep-2017
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
• Automotive: BQ24075-Q1
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Dec-2017
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Dec-2017
Pack Materials-Page 2
PACKAGE OUTLINE
RGT0016B SCALE 3.600
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
3.1 B
A
2.9
1 MAX C
SEATING PLANE
0.05
0.00 0.08
4X SYMM
17
1.5
1
12
0.3
16X
0.2
16 13 0.1 C A B
PIN 1 ID SYMM
(OPTIONAL) 0.05
0.5
16X
0.3
4219033/A 08/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RGT0016B VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.6)
SYMM
16 13
16X (0.6)
1
12
16X (0.25)
17 SYMM
(2.8)
(0.55)
TYP
12X (0.5)
9
4
( 0.2) TYP
VIA
5 8
(R0.05) (0.55) TYP
ALL PAD CORNERS
(2.8)
SOLDER MASK
METAL OPENING
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RGT0016B VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.47)
16 13
16X (0.6)
1
12
16X (0.25)
17 SYMM
(2.8)
12X (0.5)
9
4
METAL
ALL AROUND
5 8
SYMM
(R0.05) TYP
(2.8)
4219033/A 08/2016
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
PACKAGE OUTLINE
RGT0016C SCALE 3.600
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
3.1 B
A
2.9
1 MAX C
SEATING PLANE
0.05 0.08
0.00
4X SYMM
1.5
1
12
0.30
16X
0.18
16 13 0.1 C A B
PIN 1 ID SYMM
(OPTIONAL) 0.05
0.5
16X
0.3
4222419/B 11/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RGT0016C VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.68)
SYMM
16 13
16X (0.6)
1
12
16X (0.24)
SYMM
(2.8)
(0.58)
TYP
12X (0.5)
9
4
( 0.2) TYP
VIA
5 8
(R0.05) (0.58) TYP
ALL PAD CORNERS
(2.8)
SOLDER MASK
METAL OPENING
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RGT0016C VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.55)
16 13
16X (0.6)
1
12
16X (0.24)
17 SYMM
(2.8)
12X (0.5)
9
4
METAL
ALL AROUND
5 8
SYMM
(R0.05) TYP
(2.8)
4222419/B 11/2016
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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