bq24196 I C Controlled 2.5-A Single Cell USB/Adapter Charger With Narrow VDC Power Path Management and USB OTG

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bq24196
SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014

bq24196 I2C Controlled 2.5-A Single Cell USB/Adapter Charger


with Narrow VDC Power Path Management and USB OTG
1

1 Features
• High Efficiency 2.5-A Switch Mode Charger • Safety
– 92% Charge Efficiency at 2 A – Battery Temperature Sensing and Charging
• Highest Battery Discharge Efficiency with 12-mΩ Safety Timer
Battery Discharge MOSFET up to 9-A Discharge – Thermal Regulation and Thermal Shutdown
Current – Input System Over-Voltage Protection
• Single Input USB-compliant/Adapter Charger – MOSFET Over-Current Protection
– Input Voltage and Current Limit Supports • Charge Status Outputs for LED or Host Processor
USB2.0 and USB3.0 • Low Battery Leakage Current and Support
– Input Current Limit: 100 mA, 150 mA, 500 mA, Shipping Mode
900 mA, 1.2 A, 1.5 A, 2 A and 3 A • 4.00 mm x 4.00 mm VQFN-24 Package
• 3.9-V to 17-V Input Operating Voltage Range
– Support All Kinds of Adapter with Input Voltage 2 Applications
DPM Regulation • Tablet PC and Smart Phone
• USB OTG 5 V at 1.3-A Synchronous Boost • Portable Audio Speaker
Converter Operation
• Portable Media Players
– 93% 5-V Boost Efficiency at 1 A
• Internet Devices
• Narrow VDC (NVDC) Power Path Management
– Instant-on Works with No Battery or Deeply 3 Description
Discharged Battery The bq24196 is highly-integrated switch-mode battery
– Ideal Diode Operation in Battery Supplement charge management and system power path
Mode management devices for single cell Li-Ion and Li-
polymer battery in a wide range of tablet and other
• 1.5-MHz Switching Frequency for Low Profile
portable devices.
Inductor
• Autonomous Battery Charging with or without Device Information(1)
Host Management PART NUMBER PACKAGE BODY SIZE (NOM)
– Battery Charge Enable bq24196 VQFN (24) 4.00 mm x 4.00 mm
– Battery Charge Preconditioning (1) For all available packages, see the orderable addendum at
– Charge Termination and Recharge the end of the datasheet.

• High Accuracy (0°C to 125°C)


bq24196 with PSEL from PHY, charging from
– ±0.5% Charge Voltage Regulation SDP/DCP, and Two Thermistor Connections
– ±7% Charge Current Regulation bq24196 1μH SYS: 3.5V-4.45V
5V USB VBUS SW
– ±7.5% Input Current Regulation SDP/DCP 1μF
6.8μF
PMID 47nF
10μF 10μF 10μF 10μF

BTST
– ±2% Output Regulation in Boost Mode REGN
1μF

• High Integration SYS


PGND

– Power Path Management VREF


2.2kW
PG
SYS
STAT
– Synchronous Switching MOSFETs 10kW
BAT
353W 10μF
10kW 10kW
(1.5A max)
– Integrated Current Sensing SDA
SCL
ILIM
Host REGN
– Bootstrap Diode INT
OTG 5.52kW
CE TS1
– Internal Loop Compensation TS2
31.23kW 10kW
PHY PSEL
(103-AT)
Power Pad

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
bq24196
SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014 www.ti.com

Table of Contents
1 Features .................................................................. 1 8.3 Feature Description................................................. 13
2 Applications ........................................................... 1 8.4 Device Functional Modes........................................ 25
3 Description ............................................................. 1 8.5 Register Map........................................................... 26
4 Revision History..................................................... 2 9 Application and Implementation ........................ 34
9.1 Application Information............................................ 34
5 Description (Continued) ........................................ 3
9.2 Typical Application .................................................. 34
6 Pin Configuration and Functions ......................... 4
10 Power Supply Recommendations ..................... 39
7 Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5 11 Layout................................................................... 39
11.1 Layout Guidelines ................................................. 39
7.2 ESD Ratings ............................................................ 5
11.2 Layout Example .................................................... 40
7.3 Recommended Operating Conditions....................... 6
7.4 Thermal Information .................................................. 6 12 Device and Documentation Support ................. 41
7.5 Electrical Characteristics........................................... 6 12.1 Documentation Support ....................................... 41
7.6 Typical Characteristics .............................................. 9 12.2 Trademarks ........................................................... 41
12.3 Electrostatic Discharge Caution ............................ 41
8 Detailed Description ............................................ 12
12.4 Glossary ................................................................ 41
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12 13 Mechanical, Packaging, and Orderable
Information ........................................................... 42

4 Revision History
Changes from Original (October 2012) to Revision A Page

• Added Handling Rating table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section. .............................................................. 1
• Changed BOOT to BTST in Figure 36 ................................................................................................................................... 1
• Changed VSLEEPZ, VBAT_DPL_HY, VBATGD , ICHG_20pct, VSHORT, IADPT_DPM, KILIM, VBTST_REFRESH in Electrical Characteristics.......... 6
• Added –40°C to 85° to IBAT Test Condition............................................................................................................................. 6
• Added REG00[6:3] = 0110 (4.36 V) or 1011 (4.76 V) to VINDPM_REG_ACC Test Conditions...................................................... 8
• Added a MIN value of 435 to KILIM.......................................................................................................................................... 8
• Deleted TJunction_REG MIN and MAX ......................................................................................................................................... 8
• Changed VOTG_ILIM to IOTG_ILIM and VOTG_HSZCP to IOTG_HSZCP ................................................................................................... 8
• Deleted VREGN, VVBUS = 5 V, IREGN = 20 mA MAX value ......................................................................................................... 9
• Changed Functional Block Diagram ..................................................................................................................................... 12
• Changed REG09[5:4] to REG08[5:4] in Charging Termination section ............................................................................... 20
• Changed Charging Safety Timer description........................................................................................................................ 20
• Changed Host Mode and Default Mode description............................................................................................................. 25
• Changed Charge Current Control Register REG02 Bit 0 description and note ................................................................... 29
• Changed Charge Voltage Limit from Default: 4.304 V (110010) to Default: 4.208 V (101100) ........................................... 30
• Changed BOOT to BTST in Figure 36 ................................................................................................................................. 34
• Changed BOOT to BTST in Figure 37 ................................................................................................................................. 35

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5 Description (Continued)
Its low impedance power path optimizes switch-mode operation efficiency, reduces battery charging time and
extends battery life during discharging phase. The I2C serial interface with charging and system settings makes
the device a truly flexible solution.
The device supports a wide range of input sources, including standard USB host port, USB charging port and
high power DC adapter. The bq24196 takes the result from detection circuit in the system, such as USB PHY
device. The bq24196 is compliant with USB 2.0 and USB 3.0 power spec with input current and voltage
regulation. Meanwhile, the bq24196 meets USB On-the-Go operation power rating specification by supplying 5 V
on VBUS with current limit up to 1.3 A.
The power path management regulates the system slightly above battery voltage but does not drop below 3.5-V
minimum system voltage (programmable). With this feature, the system maintains operation even when the
battery is completely depleted or removed. When the input current limit or voltage limit is reached, the power
path management automatically reduces the charge current to zero. As the system load continues to increase,
the power path discharges the battery until the system power requirement is met. This supplement mode
operation prevents overloading the input source.
The device initiates and completes a charging cycle without software control. It automatically detects the battery
voltage and charges the battery in three phases: pre-conditioning, constant current and constant voltage. At the
end of the charging cycle, the charger automatically terminates when the charge current is below a preset limit in
the constant voltage phase. When the full battery falls below the recharge threshold, the charger will
automatically start another charging cycle.
The device provides various safety features for battery charging and system operation, including negative
thermistor monitoring, charging safety timer and over-voltage/over-current protections. The thermal regulation
reduces charge current when the junction temperature exceeds 120°C (programmable).
The STAT output reports the charging status and any fault conditions. The PG output in the bq24196 indicates if
a good power source is present. The INT immediately notifies the host when a fault occurs.
The bq24196 is available in a 24-pin, 4.00 x 4.00 mm2 thin VQFN package.

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6 Pin Configuration and Functions

RGE Package
24-Pin VQFN With Exposed Thermal Pad
(Top View)

REGN
VBUS

BTST
PMID

SW

SW
24 23 22 21 20 19

VBUS 1 18 PGND

PSEL 2 17 PGND

PG 3 16 SYS
bq24196
STAT 4 15 SYS

SCL 5 14 BAT

SDA 6 13 BAT

7 8 9 10 11 12
TS1
ILIM
CE
OTG

TS2
INT

Pin Functions
PIN
TYPE DESCRIPTION
NAME NUMBER
Charger Input Voltage. The internal n-channel reverse block MOSFET (RBFET) is connected between VBUS and PMID
VBUS 1,24 P with VBUS on source. Place a 1-µF ceramic capacitor from VBUS to PGND and place it as close as possible to IC. (Refer
to Application Information Section for details)
I
PSEL 2 Power source selection input. High indicates a USB host source and Low indicates an adapter source.
Digital
O Open drain active low power good indicator. Connect to the pull up rail via 10-kΩ resistor. LOW indicates a good input
PG 3
Digital source if the input voltage is between UVLO and ACOV, above SLEEP mode threshold, and current limit is above 30 mA.

O Open drain charge status output to indicate various charger operation. Connect to the pull up rail via 10-kΩ. LOW
STAT 4 indicates charge in progress. HIGH indicates charge complete or charge disabled. When any fault condition occurs, STAT
Digital pin blinks at 1 Hz.
I
SCL 5 I2C Interface clock. Connect SCL to the logic rail through a 10-kΩ resistor.
Digital
I/O
SDA 6 I2C Interface data. Connect SDA to the logic rail through a 10-kΩ resistor.
Digital
O Open-drain Interrupt Output. Connect the INT to a logic rail via 10-kΩ resistor. The INT pin sends active low, 256-us pulse
INT 7
Digital to host to report charger device status and fault.
USB current limit selection pin during buck mode, and active high enable pin during boost mode.
I In buck mode with USB host (PSEL=High), when OTG = High, IIN limit = 500 mA and when OTG = Low, IIN limit = 100
OTG 8
Digital mA.
The boost mode is activated when the REG01[5:4] = 10 and OTG pin is High.
I Active low Charge Enable pin. Battery charging is enabled when REG01[5:4] = 01 and CE pin = Low. CE pin must be
CE 9
Digital pulled high or low.
ILIM pin sets the maximum input current limit by regulating the ILIM voltage at 1 V. A resistor is connected from ILIM pin to
I
ILIM 10 ground to set the maximum limit as IINMAX = (1V/RILIM) × 530. The actual input current limit is the lower one set by ILIM
Analog
and by I2C REG00[2:0]. The minimum input current programmed on ILIM pin is 500 mA.

I Temperature qualification voltage input #1. Connect a negative temperature coefficient thermistor. Program temperature
TS1 11 window with a resistor divider from REGN to TS1 to GND. Charge suspends when either TS pin is out of range.
Analog Recommend 103AT-2 thermistor.

I Temperature qualification voltage input #2. Connect a negative temperature coefficient thermistor. Program temperature
TS2 12 window with a resistor divider from REGN to TS2 to GND. Charge suspends when either TS pin is out of range.
Analog Recommend 103AT-2 thermistor. TS1 and TS2 pin can be connected together for single thermistor application.

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Pin Functions (continued)


PIN
TYPE DESCRIPTION
NAME NUMBER
Battery connection point to the positive terminal of the battery pack. The internal BATFET is connected between BAT and
BAT 13,14 P
SYS. Connect a 10 µF closely to the BAT pin.
System connection point. The internal BATFET is connected between BAT and SYS. When the battery falls below the
SYS 15,16 P minimum system voltage, switch-mode converter keeps SYS above the minimum system voltage. (Refer to Application
Information Section for inductor and capacitor selection.)
Power ground connection for high-current power converter node. Internally, PGND is connected to the source of the n-
PGND 17,18 P channel LSFET. On PCB layout, connect directly to ground connection of input and output capacitors of the charger. A
single point connection is recommended between power PGND and the analog GND near the IC PGND pin.
O Switching node connecting to output inductor. Internally SW is connected to the source of the n-channel HSFET and the
SW 19,20
Analog drain of the n-channel LSFET. Connect the 0.047-µF bootstrap capacitor from SW to BTST.
PWM high side driver positive supply. Internally, the BTST is connected to the anode of the boost-strap diode. Connect
BTST 21 P
the 0.047-µF bootstrap capacitor from SW to BTST.
PWM low side driver positive supply output. Internally, REGN is connected to the cathode of the boost-strap diode.
REGN 22 P Connect a 4.7-µF (10-V rating) ceramic capacitor from REGN to analog GND. The capacitor should be placed close to the
IC. REGN also serves as bias rail of TS1 and TS2 pins.

O Connected to the drain of the reverse blocking MOSFET and the drain of HSFET. Given the total input capacitance,
PMID 23 connect a 1-µF capacitor on VBUS to PGND, and the rest all on PMID to PGND. (Refer to Application Information Section
Analog for details)
Thermal Exposed pad beneath the IC for heat dissipation. Always solder thermal pad to the board, and have vias on the thermal
– P
Pad pad plane star-connecting to PGND and ground plane for high-current power converter.

7 Specifications
7.1 Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VBUS –2 22 V
PMID –0.3 22 V
STAT, PG –0.3 20 V
BTST –0.3 26 V
Voltage range (with
SW –2 20 V
respect to GND)
BAT, SYS (converter not switching) –0.3 6 V
SDA, SCL, INT, OTG, ILIM, REGN, TS1, TS2, CE, PSEL –0.3 7 V
BTST TO SW –0.3 –7 V
PGND to GND –0.3 –0.3 V
Output sink current INT, STAT, PG 6 mA
Junction temperature –40°C 150 °C
Storage temperature, Tstg –65 150 °C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.

7.2 ESD Ratings


VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 1000
V(ESD) Electrostatic discharge Charged device model (CDM), per JEDEC specification JESD22- V
250
C101 (2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

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7.3 Recommended Operating Conditions


MIN MAX UNIT
VIN Input voltage 3.9 17 (1) V
IIN Input current 3 A
ISYS Output current (SYS) 2.5 A
VBAT Battery voltage 4.4 V
Fast charging current 2.5 A
6 (continuous)
IBAT 9 (peak)
Discharging current with internal MOSFET A
(up to 1 sec
duration)
TA Operating free-air temperature range –40 85 °C

(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BTST or SW pins. A tight
layout minimizes switching noise.

7.4 Thermal Information


bq24196
THERMAL METRIC (1) UNIT
RGE (24 PIN)
RθJA Junction-to-ambient thermal resistance 32.2
RθJCtop Junction-to-case (top) thermal resistance 29.8
RθJB Junction-to-board thermal resistance 9.1
°C/W
ψJT Junction-to-top characterization parameter 0.3
ψJB Junction-to-board characterization parameter 9.1
RθJCbot Junction-to-case (bottom) thermal resistance 2.2

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics


VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
QUIESCENT CURRENTS
VVBUS < VUVLO, VBAT = 4.2 V, leakage between
5 µA
BAT and VBUS
High-Z Mode, or no VBUS, BATFET disabled
IBAT Battery discharge current (BAT, SW, SYS) 12 20 µA
(REG07[5] = 1), –40°C to 85°C
High-Z Mode, or no VBUS, REG07[5] = 0, –40°C
32 55 µA
to 85°C
VVBUS = 5 V, High-Z mode 15 30 µA
VVBUS = 17 V, High-Z mode 30 50 µA
VVBUS > VUVLO, VVBUS > VBAT, converter not
1.5 3 mA
switching
IVBUS Input supply current (VBUS)
VVBUS > VUVLO, VVBUS > VBAT, converter
4 mA
switching, VBAT = 3.2 V, ISYS = 0 A
VVBUS > VUVLO, VVBUS > VBAT, converter
15 mA
switching, VBAT = 3.8 V, ISYS = 0 A
VBAT = 4.2 V, Boost mode, IVBUS = 0 A,
IOTGBOOST Battery discharge current in boost mode 4 mA
converter switching
VBUS/BAT POWER UP
VVBUS_OP VBUS operating range 3.9 17 V
VVBUS_UVLOZ 2 VVBUS rising 3.6 V
VBUS for active I C, no battery
VSLEEP Sleep mode falling threshold VVBUS falling, VVBUS-VBAT 35 80 120 mV
VSLEEPZ Sleep mode rising threshold VVBUS rising, VVBUS-VBAT 170 250 350 mV
VACOV VBUS over-voltage rising threshold VVBUS rising 17.4 18 V
VACOV_HYST VBUS over-voltage falling hysteresis VVBUS falling 700 mV
VBAT_UVLOZ Battery for active I2C, no VBUS VBAT rising 2.3 V

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Electrical Characteristics (continued)


VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VBAT_DPL Battery depletion threshold VBAT falling 2.4 2.6 V
VBAT_DPL_HY Battery depletion rising hysteresis VBAT rising 170 260 mV
VVBUSMIN Bad adapter detection threshold VVBUS falling 3.8 V
IBADSRC Bad adapter detection current source 30 mA
tBADSRC Bad source detection duration 30 ms
POWER PATH MANAGEMENT
Isys = 0 A, Q4 off, VBAT up to 4.2 V,
VSYS_RANGE Typical system regulation voltage 3.5 4.35 V
REG01[3:1] = 101, VSYSMIN = 3.5 V
VSYS_MIN System voltage output REG01[3:1] = 101, VSYSMIN = 3.5 V 3.55 3.65 V
Internal top reverse blocking MOSFET on-
RON(RBFET) Measured between VBUS and PMID 23 38 mΩ
resistance

Internal top switching MOSFET on-resistance TJ = –40°C to 85°C 30 38


RON(HSFET) mΩ
between PMID and SW TJ = -40°C to 125°C 30 48

Internal bottom switching MOSFET on-resistance TJ = –40°C to 85°C 35 48


RON(LSFET) mΩ
between SW and PGND TJ = -40°C to 125°C 35 51
VFWD BATFET forward voltage in supplement mode BAT discharge current 10 mA 30 mV
VSYS_BAT SYS/BAT Comparator VSYS falling 90 mV
VBATGD Battery good comparator rising threshold VBAT rising 3.55 V
VBATGD_HYST Battery good comparator falling threshold VBAT falling 100 mV
BATTERY CHARGER
VBAT_REG_ACC Charge voltage regulation accuracy VBAT = 4.208 V –0.5% 0.5%
VBAT = 3.8 V, ICHG = 1792 mA, TJ = 25°C –4% 4%
IICHG_REG_ACC Fast charge current regulation accuracy VBAT = 3.8 V, ICHG = 1792 mA, TJ = –20°C to
–7% 7%
125°C
ICHG_20pct Charge current with 20% option on VBAT = 3.1 V, ICHG = 104 mA, REG02 = 03 75 100 150 mA
VBATLOWV Battery LOWV falling threshold Fast charge to precharge, REG04[1] = 1 2.6 2.8 2.9 V
VBATLOWV_HYST Battery LOWV rising threshold Precharge to fast charge, REG04[1] = 1 2.8 3.0 3.1 V
IPRECHG_ACC Precharge current regulation accuracy VBAT = 2.6 V, ICHG = 256 mA –20% 20%
ITERM_ACC Termination current accuracy ITERM = 256 mA, ICHG = 960 mA –20% 20%
VSHORT Battery Short Voltage VBAT falling 2.0 V
VSHORT_HYST Battery Short Voltage hysteresis VBAT rising 200 mV
ISHORT Battery short current VBAT < 2.2V 100 mA
VRECHG Recharge threshold below VBAT_REG VBAT falling, REG04[0] = 0 100 mV
tRECHG Recharge deglitch time VBAT falling, REG04[0] = 0 20 ms
TJ = 25°C 12 15
RON_BATFET SYS-BAT MOSFET on-resistance mΩ
TJ = –40°C to 125°C 12 20

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Electrical Characteristics (continued)


VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE/CURRENT REGULATION
VINDPM_REG_ACC Input voltage regulation accuracy REG00[6:3] = 0110 (4.36 V) or 1011 (4.76 V) –2% 2%
USB100 85 100 mA

USB Input current regulation limit, VBUS = 5 V, USB150 125 150 mA


IUSB_DPM
current pulled from SW USB500 440 500 mA
USB900 750 900 mA
IADPT_DPM Input current regulation accuracy 1.35 1.5 1.65 A
IIN_START Input current limit during system start up VSYS < 2.2 V 100 mA
KILIM IIN = KILIM/RILIM IINDPM = 1.5 A 435 485 530 AxΩ
BAT OVER-VOLTAGE PROTECTION
VBATOVP Battery over-voltage threshold VBAT rising, as percentage of VBAT_REG 104%
VBATOVP_HYST Battery over-voltage hysteresis VBAT falling, as percentage of VBAT_REG 2%
Battery over-voltage deglitch time to disable
tBATOVP 1 µs
charge
THERMAL REGULATION AND THERMAL SHUTDOWN
TJunction_REG Junction temperature regulation accuracy REG06[1:0] = 11 120 °C
TSHUT Thermal shutdown rising temperature Temperature increasing 160 °C
TSHUT_HYS Thermal shutdown hysteresis 30 °C
Thermal shutdown rising deglitch Temperature increasing delay 1 ms
Thermal shutdown falling deglitch Temperature decreasing delay 1 ms
COLD/HOT THERMISTER COMPARATOR
Cold temperature threshold, TS pin voltage rising Charger suspends charge. As percentage to 73.5
VLTF 73% 74%
threshold VREGN %
VLTF_HYS Cold temperature hysteresis, TS pin voltage falling As percentage to VREGN 0.2% 0.4% 0.6%
47.2
VHTF Hot temperature TS pin voltage threshold As percentage to VREGN 46.6% 48.8%
%
Cut-off temperature TS pin voltage falling 44.7
VTCO As percentage to VREGN 44.2% 45.2%
threshold %
Deglitch time for temperature out of range
VTS > VLTF, or VTS < VTCO, or VTS < VHTF 10 ms
detection
CHARGE OVER-CURRENT COMPARATOR
IHSFET_OCP HSFET over-current threshold 5.3 7 A
IBATFET_OCP System over load threshold 9 A
CHARGE UNDER-CURRENT COMPARATOR (CYCLE-BY-CYCLE)
VLSFET_UCP LSFET charge under-current falling threshold From sync mode to non-sync mode 100 mA
PWM OPERATION
FSW PWM Switching frequency, and digital clock 1300 1500 1700 kHz
DMAX Maximum PWM duty cycle 97%
VBTST-VSW when LSFET refresh pulse is
3.6
requested, VBUS = 5 V
VBTST_REFRESH Bootstrap refresh comparator threshold V
VBTST-VSW when LSFET refresh pulse is
4.5
requested, VBUS > 6 V
BOOST MODE OPERATION
VOTG_REG OTG output voltage I(VBUS) = 0 5.00 V
VOTG_REG_ACC OTG output voltage accuracy I(VBUS) = 0 –2% 2%
REG01[0] = 0 0.5 A
IOTG OTG mode output current
REG01[0] = 1 1.3 A
VOTG_OVP OTG over-voltage threshold 5.3 5.5 V
IOTG_ILIM LSFET cycle-by-cycle current limit 3.2 4.6 A
IOTG_HSZCP HSFET under current falling threshold 100 mA

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Electrical Characteristics (continued)


VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
REG01[0] = 1 1.4 1.8 2.7
IRBFET_OCP RBFET over-current threshold A
REG01[0] = 0 0.6 1.1 1.8
REGN LDO
VVBUS = 10 V, IREGN = 40 mA 5.6 6 6.4 V
VREGN REGN LDO output voltage
VVBUS = 5 V, IREGN = 20 mA 4.75 4.8 V
IREGN REGN LDO current limit VVBUS = 10 V, VREGN = 3.8 V 50 mA
LOGIC I/O PIN CHARACTERISTICS (OTG, CE, PSEL, STAT, PG)
VILO Input low threshold 0.4 V
VIH Input high threshold 1.3 V
VOUT_LO Output low saturation voltage Sink current = 5 mA 0.4 V
IBIAS High level leakage current Pull up rail 1.8 V 1 µA
I2C INTERFACE (SDA, SCL, INT)
VIH Input high threshold level VPULL-UP = 1.8 V, SDA and SCL 1.3 V
VIL Input low threshold level VPULL-UP = 1.8 V, SDA and SCL 0.4 V
VOL Output low threshold level Sink current = 5 mA 0.4 V
IBIAS High-level leakage current VPULL-UP = 1.8 V, SDA and SCL 1 µA
fSCL SCL clock frequency 400 kHz
DIGITAL CLOCK AND WATCHDOG TIMER
fHIZ Digital crude clock REGN LDO disabled 15 35 50 kHz
fDIG Digital clock REGN LDO enabled 1300 1500 1700 kHz
tWDT REG05[5:4] = 11 REGN LDO enabled 136 160 sec

7.6 Typical Characteristics


Table 1. Table of Figures
FIGURE NO.
System Light Load Efficiency vs System Load Current Figure 1
SYS Voltage Regulation vs System Load Figure 2
Charging Efficiency vs Charging Current Figure 3
Boost Mode Efficiency vs VBUS Load Current Figure 4
Boost Mode VBUS Voltage Regulation vs VBUS Load Current Figure 5
SYS Voltage vs Temperature Figure 6
BAT Voltage vs Temperature Figure 7
Input Current Limit vs Temperature Figure 8
Charge Current vs Temperature Figure 9

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95 3.70

90 3.68

SYS Voltage (V)


Efficiency (%)

85 3.66

80 3.64

75 VBUS = 5 V 3.62
VBUS = 5 V
VBUS = 9 V VBUS = 17 V
70 3.60
0 100 200 300 400 500 600 0 1 2 3 4 5
Load Current (mA) C012 System Load Current (A) C014

Figure 1. System Light Load Efficiency vs System Load Figure 2. SYS Voltage Regulation vs System Load
Current
95 100
VBAT = 3.2 V
VBAT = 3.8 V
93
95

Efficiency (%)
Efficiency (%)

91
90
89

VBUS = 5 V 85
87 VBUS = 7 V
VBUS = 9 V
VBUS = 12 V
85 80
0 0.5 1 1.5 2 2.5 3 0 500 1000 1500
Load Current (A) C020 VBUS Load Current (A) C013

Figure 3. Charging Efficiency vs Charging Current Figure 4. Boost Mode Efficiency vs VBUS Load Current
5.04 3.80
SYSMIN 3.5 V
5.02 3.75

5.00
VBUS Voltage (V)

SYS Voltage (V)

3.70
4.98
3.65
4.96
3.60
4.94
VBAT = 3.2 V
4.92 3.55
VBAT = 3.8 V
VBAT = 4.2 V
4.90 3.50
0 200 400 600 800 1000 1200 1400 ±50 0 50 100 150
VBUS Load Current (A) C005 Temperature (ƒC) C001

Figure 5. Boost Mode VBUS Voltage Regulation vs VBUS Figure 6. SYS Voltage vs Temperature
Load Current

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4.25 2000

1800
4.21

Input Current Limit (A)


1600
BAT Voltage (V)

1400
4.17
1200
4.13 1000
IIN = 500 mA
800 IIN = 1.5 A
4.09 VREG = 4.112 V
600 IIN = 2 A
VREG = 4.208 V
4.05 400
–50 0 50 100 150 ±50 0 50 100 150
Temperature (°C) C002 Temperature (ƒC) C003

Figure 7. BAT Voltage vs Temperature Figure 8. Input Current Limit vs Temperature


5
4.5
4
Charge Current (A)

3.5
3
2.5
2
1.5
1
0.5 TREG 80 C
TREG 120 C
0
40 50 60 70 80 90 100 110 120 130
Temperature (°C) C009

Figure 9. Charge Current vs Temperature

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8 Detailed Description

8.1 Overview
The bq24196 is an I2C controlled power path management device and a single cell Li-Ion battery charger. It
integrates the input reverse-blocking FET (RBFET, Q1), high-side switching FET (HSFET, Q2), low-side
switching FET (LSFET, Q3), and BATFET (Q4) between system and battery. The device also integrates the
bootstrap diode for the high-side gate drive.

8.2 Functional Block Diagram


VBUS
PMID

V(VBUS_UVLOZ) Q1
UVLO
Q1 Gate
V(BATZ) + V(SLEEP) Control
SLEEP REGN REGN
LDO
EN_HIZ
ACOV
V(AC0V)
BTST
FBO

VBUS VBUS_OVP_BOOST
V(OTG_OVP)

I(Q2) Q2_UCP_BOOST
VINDPM I(OTG_HSZCP)

SW
I(Q3) Q3_OCP_BOOST
IINDPM I(OTG_ILIM) CONVERTER Q2
CONTROL
BAT BATOVP REGN
IC TJ V(BAT_REG) x V(BATOVP)
BAT
TREG
VBAT_REG I(LSFET_UCP)
UCP I(Q2)
Q3 PGND
SYS I(Q3) Q2_OCP
I(HSFET_OCP)
VSYSMIN
ICHG_REG EN_HIZ V(BTST-SW)
EN_CHARGE REFRESH
V(BTST_REFRESH)
EN_BOOST

SYS

ICHG

VBAT_REG
ICHG_REG Q4 Gate
REF
DAC I(BADSRC) Control
BAD_SRC
IDC Q4
CONVERTER BAT
ILIM
CONTROL IC TJ
STATE TSHUT
TSHUT
MACHINE
PSEL BAT
USB BAT_GD
Adapter
1.5A
V(BATGD)
bq24196
OTG V(BAT_REG) - V(RECHG)
RECHRG
BAT
INT
ICHG
TERMINATION
CHARGE ITERM TS1
CONTROL BATTERY
STAT SUSPEND
STATE THERMISTER
MACHINE BATLOWV V(BATLOWV) SENSING TS2
BAT
PG I2C V(SHORT)
Interface BATSHORT
BAT

SCL SDA CE

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8.3 Feature Description

8.3.1 Device Power Up

8.3.1.1 Power-On-Reset (POR)


The internal bias circuits are powered from the higher voltage of VBUS and BAT. When VBUS or VBAT rises
above UVLOZ, the sleep comparator, battery depletion comparator and BATFET driver are active. I2C interface
is ready for communication and all the registers are reset to default value. The host can access all the registers
after POR.

8.3.1.2 Power Up from Battery without DC Source


If only battery is present and the voltage is above depletion threshold (VBAT_DEPL), the BATFET turns on and
connects battery to system. The REGN LDO stays off to minimize the quiescent current. The low RDSON in
BATFET and the low quiescent current on BAT minimize the conduction loss and maximize the battery run time.
The device always monitors the discharge current through BATFET. When the system is overloaded or shorted,
the device will immediately turn off BATFET and keep BATFET off until the input source plugs in again.

8.3.1.2.1 BATFET Turn Off


The BATFET can be forced off by the host through I2C REG07[5]. This bit allows the user to independently turn
off the BATFET when the battery condition becomes abnormal during charging. When BATFET is off, there is no
path to charge or discharge the battery.
When battery is not attached, the BATFET should be turned off by setting REG07[5] to 1 to disable charging and
supplement mode.

8.3.1.2.2 Shipping Mode


When end equipment is assembled, the system is connected to battery through BATFET. There will be a small
leakage current to discharge the battery even when the system is powered off. In order to extend the battery life
during shipping and storage, the device can turn off BATFET so that the system voltage is zero to minimize the
leakage.
In order to keep BATFET off during shipping mode, the host has to disable the watchdog timer (REG05[5:4] =
00) and disable BATFET (REG07[5] = 1) at the same time.
Once the BATFET is disabled, the BATFET can be turned on by plugging in adapter.

8.3.1.3 Power Up from DC Source


When the DC source plugs in, the bq24196 checks the input source voltage to turn on REGN LDO and all the
bias circuits. It also checks the input current limit before starts the buck converter.

8.3.1.3.1 REGN LDO


The REGN LDO supplies internal bias circuits as well as the HSFET and LSFET gate drive. The LDO also
provides bias rail to TS1/TS2 external resistors. The pull-up rail of STAT and PG can be connected to REGN as
well.
The REGN is enabled when all the conditions are valid.
1. VBUS above UVLOZ
2. VBUS above battery + VSLEEPZ in buck mode or VBUS below battery + VSLEEPZ in boost mode
3. After typical 220ms delay (100ms minimum) is complete
If one of the above conditions is not valid, the device is in high impedance mode (HIZ) with REGN LDO off. The
device draws less than 50 µA from VBUS during HIZ state. The battery powers up the system when the device is
in HIZ.

8.3.1.3.2 Input Source Qualification


After REGN LDO powers up, the bq24196 checks the current capability of the input source. The input source has
to meet the following requirements to start the buck converter.

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Feature Description (continued)


1. VBUS voltage below 18 V (not in ACOV)
2. VBUS voltage above 3.8 V when pulling 30 mA (poor source detection)
Once the input source passes all the conditions above, the status register REG08[2] goes high and the PG pin
goes low. An INT is asserted to the host.
If the device fails the poor source detection, it will repeat the detection every 2 seconds.

8.3.1.3.3 Input Current Limit Detection


The USB ports on personal computers are convenient charging source for portable devices (PDs). If the portable
device is attached to a USB host, the USB specification requires the portable device to draw limited current (100
mA/500 mA in USB 2.0, and 150 mA/900 mA in USB 3.0). If the portable device is attached to a charging port, it
is allowed to draw up to 1.5 A.
After the PG is LOW or REG08[2] goes HIGH, the charger device always runs input current limit detection when
a DC source plugs in unless the charger is in HIZ during host mode.
The bq24196 sets input current limit through PSEL and OTG pins.
After the input current limit detection is done, the host can write to REG00[2:0] to change the input current limit.

8.3.1.3.4 PSEL/OTG Pins Set Input Current Limit


The bq24196 has PSEL. It directly takes the USB PHY device output to decide whether the input is USB host or
charging port.

Table 2. bq24196 Input Current Limit Detection


PSEL OTG INPUT CURRENT LIMIT REG08[7:6]
HIGH LOW 100 mA 01
HIGH HIGH 500 mA 01
LOW — 3A 10

8.3.1.3.5 HIZ State wth 100mA USB Host


In battery charging spec, the good battery threshold is the minimum charge level of a battery to power up the
portable device successfully. When the input source is 100-mA USB host, and the battery is above bat-good
threshold (VBATGD), the device follows battery charging spec and enters high impedance state (HIZ). In HIZ state,
the device is in the lowest quiescent state with REGN LDO and the bias circuits off. The charger device sets
REG00[7] to 1, and the VBUS current during HIZ state will be less than 30 µA. The system is supplied by the
battery.
Once the charger device enters HIZ state in host mode, it stays in HIZ until the host writes REG00[7] = 0. When
the processor host wakes up, it is recommended to first check if the charger is in HIZ state.
In default mode, the charger IC will reset REG00[7] back to 0 when input source is removed. When another
source plugs in, the charger IC will run detection again, and update the input current limit.

8.3.1.3.6 Force Input Current Limit Detection


The host can force the charger device to run input current limit detection by setting REG07[7] = 1. After the
detection is complete, REG07[7] will return to 0 by itself.

8.3.1.4 Converter Power-Up


After the input current limit is set, the converter is enabled and the HSFET and LSFET start switching. If battery
charging is disabled, BATFET turns off. Otherwise, BATFET stays on to charge the battery.
The bq24196 provides soft-start when ramp up the system rail. When the system rail is below 2.2 V, the input
current limit is forced to 100 mA. After the system rises above 2.2 V, the charger device sets the input current
limit set by the lower value between register and ILIM pin.

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As a battery charger, the bq24196 deploys a 1.5-MHz step-down switching regulator. The fixed frequency
oscillator keeps tight control of the switching frequency under all conditions of input voltage, battery voltage,
charge current and temperature, simplifying output filter design.
A type III compensation network allows using ceramic capacitors at the output of the converter. An internal saw-
tooth ramp is compared to the internal error control signal to vary the duty cycle of the converter. The ramp
height is proportional to the PMID voltage to cancel out any loop gain variation due to a change in input voltage.
In order to improve light-load efficiency, the device switches to PFM control at light load when battery is below
minimum system voltage setting or charging is disabled. During the PFM operation, the switching duty cycle is
set by the ratio of SYS and VBUS.

8.3.1.5 Boost Mode Operation from Battery


The bq24196 supports boost converter operation to deliver power from the battery to other portable devices
through USB port. The boost mode output current rating meets the USB On-The-Go 500-mA output requirement.
The maximum output current is 1.3 A. The boost operation can be enabled if the following conditions are valid:
1. BAT above BATLOWV threshold (VBATLOWV set by REG04[1])
2. VBUS less than BAT+VSLEEP (in sleep mode)
3. Boost mode operation is enabled (OTG pin HIGH and REG01[5:4] = 10)
4. After 220-ms delay from boost mode enable
In boost mode, the bq24196 employs a 1.5-MHz step-up switching regulator. Similar to buck operation, the
device switches from PWM operation to PFM operation at light load to improve efficiency.
During boost mode, the status register REG08[7:6] is set to 11, the VBUS output is 5 V and the output current
can reach up to 500 mA or 1.3 A, selected via I2C (REG01[0]).
Any fault during boost operation, including VBUS over-voltage or over-current, sets the fault register REG09[6] to
1 and an INT is asserted.

8.3.2 Power Path Management


The bq24196 accommodates a wide range of input sources from USB, wall adapter, to car battery. The device
provides automatic power path selection to supply the system (SYS) from input source (VBUS), battery (BAT), or
both.

8.3.2.1 Narrow VDC Architecture


The device deploys Narrow VDC architecture (NVDC) with BATFET separating system from battery. The
minimum system voltage is set by REG01[3:1]. Even with a fully depleted battery, the system is regulated above
the minimum system voltage (default 3.5 V).
When the battery is below minimum system voltage setting, the BATFET operates in linear mode (LDO mode),
and the system is 150 mV above the minimum system voltage setting. As the battery voltage rises above the
minimum system voltage, BATFET is fully on and the voltage difference between the system and battery is the
VDS of BATFET.
When the battery charging is disabled or terminated, the system is always regulated at 150 mV above the
minimum system voltage setting. The status register REG08[0] goes high when the system is in minimum system
voltage regulation.

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4.5

4.3
Charge Enabled
4.1
Charge Disabled
SYS
3.9
(V)
3.7

3.5
Minimum System Voltage
3.3

3.1
2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3

BAT (V)
Figure 10. V(SYS) vs V(BAT)

8.3.2.2 Dynamic Power Management


To meet maximum current limit in USB spec and avoid over loading the adapter, the bq24196 features Dynamic
Power Management (DPM), which continuously monitors the input current and input voltage.
When input source is over-loaded, either the current exceeds the input current limit (REG00[2:0]) or the voltage
falls below the input voltage limit (REG00[6:3]). The device then reduces the charge current until the input current
falls below the input current limit and the input voltage rises above the input voltage limit.
When the charge current is reduced to zero, but the input source is still overloaded, the system voltage starts to
drop. Once the system voltage falls below the battery voltage, the device automatically enters the supplement
mode where the BATFET turns on and battery starts discharging so that the system is supported from both the
input source and battery.
During DPM mode (either VINDPM or IINDPM), the status register REG08[3] will go high.
Figure 11 shows the DPM response with 9-V/1.2-A adapter, 3.2-V battery, 2.8-A charge current and 3.4-V
minimum system voltage setting.
Voltage
VBUS
9V

SYS
3.6V
3.4V
3.2V BAT
3.18V

Current
4A
3.2A ICHG
2.8A ISYS

1.2A IIN
1.0A
0.5A

-0.6A
DPM DPM
Supplement

Figure 11. DPM Response

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8.3.2.3 Supplement Mode


When the system voltage falls below the battery voltage, the BATFET turns on and the BATFET gate is
regulated the gate drive of BATFET so that the minimum BATFET VDS stays at 30 mV when the current is low.
This prevents oscillation from entering and exiting the supplement mode. As the discharge current increases, the
BATFET gate is regulated with a higher voltage to reduce RDSON until the BATFET is in full conduction. At this
point onwards, the BATFET VDS linearly increases with discharge current. Figure 12 shows the V-I curve of the
BATFET gate regulation operation. BATFET turns off to exit supplement mode when the battery is below battery
depletion threshold.
4.5

4.0

3.5

CURRENT (A)
3.0

2.5

2.0

1.5

1.0

0.5

0
0 5 10 15 20 25 30 35 40 45 50 55

V(BAT-SYS) (mV)

Figure 12. BATFET V-I Curve

8.3.3 Battery Charging Management


The bq24196 charges 1-cell Li-Ion battery with up to 2.5A charge current for high capacity tablet battery. The 12-
mΩ BATFET improves charging efficiency and minimizes the voltage drop during discharging.

8.3.3.1 Autonomous Charging Cycle


With battery charging enabled at POR (REG01[5:4] = 01), the bq24196 can complete a charging cycle without
host involvement. The device default charging parameters are listed in .

Table 3. Charging Parameter Default Setting


DEFAULT MODE bq24196
Charging voltage 4.208 V
Charging current 2.048 A
Pre-charge current 256 mA
Termination current 256 mA
Temperature profile Hot/Cold
Safety timer 8 hours

A new charge cycle starts when the following conditions are valid:
• Converter starts
• Battery charging is enabled by I2C register bit (REG01[5:4]) = 01 and CE is low
• No thermistor fault on TS1 and TS2
• No safety timer fault
• BATFET is not forced to turn off (REG07[5])
The charger device automatically terminates the charging cycle when the charging current is below termination
threshold and charge voltage is above recharge threshold. When a full battery voltage is discharged below
recharge threshold (REG04[0]), the bq24196 automatically starts another charging cycle.
The STAT output indicates the charging status of charging (LOW), charging complete or charge disable (HIGH)
or charging fault (Blinking). The status register REG08[5:4] indicates the different charging phases: 00-charging
disable, 01-precharge, 10-fast charge (constant current) and constant voltage mode, 11-charging done. Once a
charging cycle is complete, an INT is asserted to notify the host.

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The host can always control the charging operation and optimize the charging parameters by writing to the
registers through I2C.

8.3.3.2 Battery Charging Profile


The device charges the battery in three phases: preconditioning, constant current and constant voltage. At the
beginning of a charging cycle, the device checks the battery voltage and applies current.

Table 4. Charging Current Setting


VBAT CHARGING CURRENT REG DEFAULT SETTING REG08[5:4]
<2V 100 mA – 01
2V-3V REG03[7:4] 256 mA 01
>3V REG02[7:2] 2048 mA 10

If the charger device is in DPM regulation or thermal regulation during charging, the actual charging current will
be less than the programmed value. In this case, termination is temporarily disabled and the charging safety
timer is counted at half the clock rate.

Regulation Voltage
(3.5V – 4.4V)
Battery Voltage
Fast Charge Current
(500mA-4020mA)

Charge Current

VBAT_LOWV (2.8V/3V)

VBAT_SHORT (2V)

IPRECHARGE (128mA-2048mA)
ITERMINATION (128mA-2048mA)
IBATSHORT (100mA)
Trickle Charge Pre-charge Fast Charge and Voltage Regulation Safety Timer
Expiration

Figure 13. Battery Charging Profile

8.3.3.3 Thermistor Cold/Hot Temperature Window


The bq24196 continuously monitors battery temperature by measuring the voltage between the TS pins and
ground, typically determined by a negative temperature coefficient thermistor and an external voltage divider. The
device compares this voltage against its internal thresholds to determine if charging is allowed. To initiate a
charge cycle, the battery temperature must be within the VLTF to VHTF thresholds. During the charge cycle the
battery temperature must be within the VLTF to VTCO thresholds, else the device suspends charging and waits
until the battery temperature is within the VLTF to VHTF range.

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REGN

bq24196 RT1

TS

RT2 RTH
103AT

Figure 14. TS Resistor Network

When the TS fault occurs, the fault register REG09[2:0] indicates the actual condition on each TS pin and an INT
is asserted to the host. The STAT pin indicates the fault when charging is suspended.
TEMPERATURE RANGE TO TEMPERATURE RANGE
INITIATE CHARGE DURING A CHARGE CYCLE
VREF VREF

CHARGE SUSPENDED CHARGE SUSPENDED


VLTF VLTF

VLTFH VLTFH

CHARGE at full C CHARGE at full C

VHTF
VTCO
CHARGE SUSPENDED
CHARGE SUSPENDED
AGND AGND

Figure 15. TS Pin Thermistor Sense Thresholds

Assuming a 103AT NTC thermistor is used on the battery pack, the value RT1 and RT2 can be determined by
using the following equations:
æ 1 1 ö
VVREF ´ RTHCOLD ´ RTHHOT ´ ç - ÷
è VLTF VTCO ø
 RT2 =
æV ö æV ö
RTHHOT ´ ç VREF - 1÷ - RTHCOLD ´ ç VREF - 1÷
è VTCO ø è VLTF ø

VVREF
-1
VLTF
RT1 =
1 1
+
RT2 RTHCOLD (1)
Select 0°C to 45°C range for Li-ion or Li-polymer battery,
RTHCOLD = 27.28 kΩ
RTHHOT = 4.911 kΩ
RT1 = 5.52 kΩ
RT2 = 31.23 kΩ

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8.3.3.4 Charging Termination


The bq24196 terminates a charge cycle when the battery voltage is above recharge threshold, and the current is
below termination current. After the charging cycle is complete, the BATFET turns off. The converter keeps
running to power the system, and BATFET can turn back on to engage supplement mode.
When termination occurs, the status register REG08[5:4] is 11, and an INT is asserted to the host. Termination is
temporarily disabled if the charger device is in input current/voltage regulation or thermal regulation. Termination
can be disabled by writing 0 to REG05[7].

8.3.3.4.1 Termination when REG02[0] = 1


When REG02[0] is HIGH to reduce the charging current by 80%, the charging current could be less than the
termination current. The charger device termination function should be disabled. When the battery is charged to
fully capacity, the host disables charging through CE pin or REG01[5:4].

8.3.3.4.2 Termination when REG05[6] = 1


Usually the STAT bit indicates charging complete when the charging current falls below termination threshold.
Write REG05[6] = 1 to enable an early “charge done” indication on STAT pin. The STAT pin goes high when the
charge current reduces below 800 mA. The charging cycle is still on-going until the current falls below the
termination threshold.

8.3.3.5 Charging Safety Timer


The bq24196 has safety timer to prevent extended charging cycle due to abnormal battery conditions.
In default mode, the device keeps charging the battery with 5-hour fast charging safety timer regardless of
REG05[2:1] default value. At the end of the 5 hours, the EN_HIZ (REG00[7]) is set to signal the buck converter
stops and the system load is supplied by the battery. The EN_HIZ bit can be cleared to restart the buck
converter.
In host mode, the device keeps charging the battery until the fast charging safety timer expired. The duration of
safety timer can be set by the REG05[2:1] bits (default = 8 hours). At the end of safety timer, the EN_HIZ
(REG00[7]) is cleared to signal the buck converter continues to operation to supply system load.
The safety timer is 1 hour when the battery is below BATLOWV threshold. The user can program fast charge
safety timer through I2C (REG05[2:1]). When safety timer expires, the fault register REG09[5:4] goes 11 and an
INT is asserted to the host. The safety timer feature can be disabled via I2C (REG05[3]).
The following actions restart the safety timer:
• At the beginning of a new charging cycle
• Toggle the CE pin HIGH to LOW to HIGH (charge enable)
• Write REG01[5:4] from 00 to 01 (charge enable)
• Write REG05[3] from 0 to 1 (safety timer enable)
During input voltage/current regulation or thermal regulation, or when FORCE_20PCT (REG02[0]) bit is set, the
safety timer counts at half clock rate since the actual charge current is likely to be below the register setting. For
example, if the charger is in input current regulation (IINDPM) throughout the whole charging cycle, and the
safety time is set to 5 hours, the safety timer will expire in 10 hours. This feature can be disabled by writing 0 to
REG07[6].
It is recommended to disable safety timer first by clearing REG05[3] bit before safety timer configuration is
changed. The safety timer should be re-enabled by setting REG05[3] bit.

8.3.3.6 USB Timer when Charging from USB100mA Source


The total charging time in default mode from USB100-mA source is limited by a 45-min max timer. At the end of
the timer, the device stops the converter and goes to HIZ.

8.3.4 Status Outputs (PG, STAT, and INT)

8.3.4.1 Power Good Indicator (PG)


In bq24196, PG goes LOW to indicate a good input source when:

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1. VBUS above UVLO


2. VBUS above battery (not in sleep)
3. VBUS below ACOV threshold
4. VBUS above 3.8 V when 30-mA current is applied (not a poor source)

8.3.4.2 Charging Status Indicator (STAT)


The bq24196 indicates charging state on the open drain STAT pin. The STAT pin can drive LED as the
application diagram shows.

Table 5. STAT Pin State


CHARGING STATE STAT
Charging in progress (including recharge) LOW
Charging complete HIGH
Sleep mode, charge disable HIGH
Charge suspend (Input over-voltage, TS fault, timer fault, input or system over- blinking at 1Hz
voltage)

8.3.4.3 Interrupt to Host (INT)


In some applications, the host does not always monitor the charger operation. The INT notifies the system on the
device operation. The following events will generate 256-us INT pulse.
• USB/adapter source identified (through PSEL and OTG pins)
• Good input source detected
– VVBUS - VBAT > VSLEEPZ
– VVBUS > VACOV
– current limit above IBADSRC
• Input removed
• Charge Complete
• Any FAULT event in REG09
When a fault occurs, the charger device sends out INT and keeps the fault state in REG09 until the host reads
the fault register. Before the host reads REG09 and all the faults are cleared, the charger device would not send
any INT upon new faults. In order to read the current fault status, the host has to read REG09 two times
consecutively. The 1st reads fault register status from the last read and the 2nd reads the current fault register
status.

8.3.5 Protections

8.3.5.1 Input Current Limit on ILIM


For safe operation, the bq24196 has an additional hardware pin on ILIM to limit maximum input current on ILIM
pin. The input maximum current is set by a resistor from ILIM pin to ground as:
1V
 IINMAX = ´ 530
RILIM (2)
The actual input current limit is the lower value between ILIM setting and register setting (REG00[2:0]). For
example, if the register setting is 111 for 3 A, and ILIM has a 353-Ω resistor to ground for 1.5 A, the input current
limit is 1.5 A. ILIM pin can be used to set the input current limit rather than the register settings.
The device regulates ILIM pin at 1 V. If ILIM voltage exceeds 1 V, the device enters input current regulation
(Refer to Dynamic Power Path Management section).
The voltage on the ILIM pin is proportional to the input current. The ILIM pin can be used to monitor the input
current per Equation 3:
V
I IN = ILIM ´ IINMAX
1V (3)

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For example, if the ILIM pin sets 2 A, and the ILIM voltage is 0.6 V, the actual input current is 1.2 A. If the ILIM
pin is open, the input current is limited to zero since ILIM voltage floats above 1 V. If the ILIM pin is short, the
input current limit is set by the register.

8.3.5.2 Thermal Regulation and Thermal Shutdown


The bq24196 monitors the internal junction temperature TJ to avoid overheat the chip and limits the IC surface
temperature. When the internal junction temperature exceeds the preset limit (REG06[1:0]), the device lowers
down the charge current. The wide thermal regulation range from 60°C to 120°C allows the user to optimize the
system thermal performance.
During thermal regulation, the actual charging current is usually below the programmed battery charging current.
Therefore, termination is disabled, the safety timer runs at half the clock rate, and the status register REG08[1]
goes high.
Additionally, the device has thermal shutdown to turn off the converter. The fault register REG09[5:4] is 10 and
an INT is asserted to the host.

8.3.5.3 Voltage and Current Monitoring in Buck Mode


The bq24196 closely monitor the input and system voltage, as well as HSFET and LSFET current for safe buck
mode operation.

8.3.5.3.1 Input Over-Voltage (ACOV)


The maximum input voltage for buck mode operation is 18 V. If VBUS voltage exceeds 18 V, the device stops
switching immediately. During input over voltage (ACOV), the fault register REG09[5:4] will be set to 01. An INT
is asserted to the host.

8.3.5.3.2 System Over-Voltage Protection (SYSOVP)


The charger device monitors the voltage at SYS. When system over-voltage is detected, the converter is stopped
to protect components connected to SYS from high voltage damage.

8.3.5.4 Voltage and Current Monitoring in Boost Mode


The bq24196 closely monitors the VBUS voltage, as well as HSFET and LSFET current to ensure safe boost
mode operation.

8.3.5.4.1 VBUS Over-Voltage Protection


The boost mode regulated output is 5 V. When an adapter plugs in during boost mode, the VBUS voltage will
rise above regulation target. Once the VBUS voltage exceeds 5.3 V, the bq24196 stops switching and the device
exits boost mode. The fault register REG09[6] is set high to indicate fault in boost operation. An INT is asserted
to the host.

8.3.5.5 Battery Protection

8.3.5.5.1 Battery Over-Current Protection (BATOVP)


The battery over-voltage limit is clamped at 4% above the battery regulation voltage. When battery over voltage
occurs, the charger device immediately disables charge. The fault register REG09[5] goes high and an INT is
asserted to the host.

8.3.5.5.2 Charging During Battery Short Protection


If the battery voltage falls below 2 V, the charge current is reduced to 100 mA for battery safety.

8.3.5.5.3 System Over-Current Protection


If the system is shorted or exceeds the over-current limit, the BATFET is latched off. DC source insertion on
VBUS is required to reset the latch-off condition and turn on BATFET.

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8.3.6 Serial Interface


The bq24196 uses I2C compatible interface for flexible charging parameter programming and instantaneous
device status reporting. I2C is a bi-directional 2-wire serial interface developed by Philips Semiconductor (now
NXP Semiconductors). Only two bus lines are required: a serial data line (SDA) and a serial clock line (SCL).
Devices can be considered as masters or slaves when performing data transfers. A master is the device which
initiates a data transfer on the bus and generates the clock signals to permit that transfer. At that time, any
device addressed is considered a slave.
The device operates as a slave device with address 6BH, receiving control inputs from the master device like
micro controller or a digital signal processor. The I2C interface supports both standard mode (up to 100 kbits),
and fast mode (up to 400 kbits).
Both SDA and SCL are bi-directional lines, connecting to the positive supply voltage via a current source or pull-
up resistor. When the bus is free, both lines are HIGH. The SDA and SCL pins are open drain.

8.3.6.1 Data Validity


The data on the SDA line must be stable during the HIGH period of the clock. The HIGH or LOW state of the
data line can only change when the clock signal on the SCL line is LOW. One clock pulse is generated for each
data bit transferred.

SDA

SCL

Data line stable; Change


Data valid of data
allowed
Figure 16. Bit Transfer on the I2C Bus

8.3.6.2 START and STOP Conditions


All transactions begin with a START (S) and can be terminated by a STOP (P). A HIGH to LOW transition on the
SDA line while SCl is HIGH defines a START condition. A LOW to HIGH transition on the SDA line when the
SCL is HIGH defines a STOP condition.
START and STOP conditions are always generated by the master. The bus is considered busy after the START
condition, and free after the STOP condition.

SDA SDA

SCL SCL

START (S) STOP (P)

Figure 17. START and STOP conditions

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8.3.6.3 Byte Format


Every byte on the SDA line must be 8 bits long. The number of bytes to be transmitted per transfer is
unrestricted. Each byte has to be followed by an Acknowledge bit. Data is transferred with the Most Significant
Bit (MSB) first. If a slave cannot receive or transmit another complete byte of data until it has performed some
other function, it can hold the clock line SCL low to force the master into a wait state (clock stretching). Data
transfer then continues when the slave is ready for another byte of data and release the clock line SCL.
Acknowledgement Acknowledgement
signal from slave signal from receiver

MSB
SDA

SCL S or Sr 1 2 7 8 9 1 2 8 9 P or Sr
START or ACK ACK
STOP or
Repeated
Repeated
START START

Figure 18. Data Transfer on the I2C Bus

8.3.6.4 Acknowledge (ACK) and Not Acknowledge (NACK)


The acknowledge takes place after every byte. The acknowledge bit allows the receiver to signal the transmitter
that the byte was successfully received and another byte may be sent. All clock pulses, including the
acknowledge 9th clock pulse, are generated by the master.
The transmitter releases the SDA line during the acknowledge clock pulse so the receiver can pull the SDA line
LOW and it remains stable LOW during the HIGH period of this clock pulse.
When SDA remains HIGH during the 9th clock pulse, this is the Not Acknowledge signal. The master can then
generate either a STOP to abort the transfer or a repeated START to start a new transfer.

8.3.6.5 Slave Address and Data Direction Bit


After the START, a slave address is sent. This address is 7 bits long followed by the eighth bit as a data direction
bit (bit R/W). A zero indicates a transmission (WRITE) and a one indicates a request for data (READ).

SDA

SCL S 1-7 8 9 1-7 8 9 1-7 8 9 P

START ADDRESS R/W ACK DATA ACK DATA ACK STOP

Figure 19. Complete Data Transfer

8.3.6.5.1 Single Read and Write

1 7 1 1 8 1 8 1 1

S Slave Address 0 ACK Reg Addr ACK Data Addr ACK P

Figure 20. Single Write

1 7 1 1 8 1 1 7 1 1

S Slave Address 0 ACK Reg Addr ACK S Slave Address 1 ACK

8 1 1

Data NCK P

Figure 21. Single Read

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If the register address is not defined, the charger IC send back NACK and go back to the idle state.

8.3.6.5.2 Multi-Read and Multi-Write


The charger device supports multi-read and multi-write on REG00 through REG08.

1 7 1 1 8 1

S Slave Address 0 ACK Reg Addr ACK

8 1 8 1 8 1 1

Slave Address ACK Data to Addr+1 ACK Data to Addr+1 ACK P

Figure 22. Multi-Write

1 7 1 1 8 1 1 7 1 1

S Slave Address 0 ACK Reg Addr ACK S Slave Address 1 ACK

8 1 8 1 8 1 1

Data @ Addr ACK Data @ Addr+1 ACK Data @ Addr+1 ACK P

Figure 23. Multi-Read

The fault register REG09 locks the previous fault and only clears it after the register is read. For example, if
Charge Safety Timer Expiration fault occurs but recovers later, the fault register REG09 reports the fault when it
is read the first time, but returns to normal when it is read the second time. To verify real time fault, the fault
register REG09 should be read twice to get the real condition. In addition, the fault register REG09 does not
support multi-read or multi-write.

8.4 Device Functional Modes


8.4.1 Host Mode and Default Mode
The bq24196 is a host controlled device, but it can operate in default mode without host management. In default
mode, bq24196 can be used as an autonomous charger with no host or with host in sleep.
When the charger is in default mode, REG09[7] is HIGH. When the charger is in host mode, REG09[7] is LOW.
After power-on-reset, the device starts in watchdog timer expiration state, or default mode. All the registers are in
the default settings.

Any write command to bq24196 transitions the device from default mode to host mode. All the device parameters
can be programmed by the host. To keep the device in host mode, the host has to reset the watchdog timer by
writing 1 twice to REG01[6] before the watchdog timer expires (REG05[5:4]), or disable watchdog timer by
setting REG05[5:4] = 00.

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Device Functional Modes (continued)

POR
watchdog timer expired
Reset registers
I2C interface enabled

Y Host Mode
I2C Write? Start watchdog timer
Host programs registers

Default Mode
Reset watchdog timer Reset REG01 Y
Reset registers bit[6]?

N Y N
I2C Write?

Y Watchdog Timer N
Expired?

Figure 24. Watchdog Timer Flow Chart

8.4.1.1 Plug in USB100mA Source with Good Battery


When the input source is detected as 100-mA USB host, and the battery voltage is above batgood threshold
(VBATGD), the charger device enters HIZ state to meet the battery charging spec requirement.
If the charger device is in host mode, it will stay in HIZ state even after the USB100-mA source is removed, and
the adapter plugs in. During the HIZ state, REG00[7] is set HIGH and the system load is supplied from battery. It
is recommended that the processor host always checks if the charger IC is in HIZ state when it wakes up. The
host can write REG00[7] to 0 to exit HIZ state.
If the charger is in default mode, when the DC source is removed, the charger device will get out of HIZ state
automatically. When the input source plugs in again, the charger IC runs detection on the input source and
update the input current limit.

8.4.1.2 USB Timer when Charging from USB 100-mA Source


The total charging time in default mode from USB 100-mA source is limited by a 45-min max timer. At the end of
the timer, the device stops the converter and goes to HIZ.

8.5 Register Map


Table 6. Register Map
REGISTER REGISTER NAME RESET
REG00 Input Source Control Register 00110000, or 30
REG01 Power-On Configuration Register 00011011, or 1B
REG02 Charge Current Control Register 01100000, or 60
REG03 Pre-Charge/Termination Current Control Register 00010001, or 11
REG04 Charge Voltage Control Register 11001010, or CA
REG05 Charge Termination/Timer Control Register 10011010, or 9A
REG06 Thermal Regulation Control Register 00000011, or 03
REG07 Misc Operation Control Register 01001011, or 4B
REG08 System Status Register —
REG09 Fault Register —
REG0A Vender / Part / Revision Status Register —

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8.5.1 I2C Registers


Address: 6BH. REG00-07 support Read and Write. REG08-0A are read only.

8.5.1.1 Input Source Control Register REG00 (reset = 00110000, or 30)

Figure 25. REG00 Input Source Control Register Format


7 6 5 4 3 2 1 0
EN_HIZ VINDPM[3] VINDPM[2] VINDPM[1] VINDPM[0] IINLIM[2] IINLIM[1] IINLIM[0]
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 7. REG00 Input Source Control Register Description


BIT FIELD TYPE RESET DESCRIPTION
Bit 7 EN_HIZ R/W 0 0 – Disable, 1 – Enable Default: Disable (0)
Input Voltage Limit
Bit 6 VINDPM[3] R/W 0 640 mV Offset 3.88 V, Range: 3.88 V to 5.08 V
Bit 5 VINDPM[2] R/W 1 320 mV Default: 4.36 V (0110)

Bit 4 VINDPM[1] R/W 1 160 mV


Bit 3 VINDPM[0] R/W 0 80 mV
Input Current Limit (Actual input current limit is the lower of I2C and ILIM)
Bit 2 IINLIM[2] R/W 0 000 – 100 mA, 001 – 150 mA, Default SDP: 100 mA (000)(OTG pin = 0) or 500
010 – 500 mA, mA (010)
Bit 1 IINLIM[1] R/W 0
011 – 900 mA, 100 – 1.2 A, (OTG pin = 1)
Bit 0 IINLIM[0] R/W 0 101 – 1.5 A, Default DCP/CDP: 3 A (111)
110 – 2 A, 111 – 3 A

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8.5.1.2 Power-On Configuration Register REG01 (reset = 00011011, or 1B)

Figure 26. REG01 Power-On Configuration Register Format


7 6 5 4 3 2 1 0
Register Reset I2C Watchdog CHG_CONFIG[1] CHG_CONFIG[0] SYS_MIN[2] SYS_MIN[1] SYS_MIN[0] BOOST_LIM
Timer Reset
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 8. REG01 Power-On Configuration Register Description


BIT FIELD TYPE RESET DESCRIPTION NOTE
Bit 7 Register Reset R/W 0 0 – Keep current register setting, Default: Keep current register setting (0)
1 – Reset to default Back to 0 after register reset
Bit 6 I2C Watchdog R/W 0 0 – Normal ; 1 – Reset Default: Normal (0)
Timer Reset Back to 0 after timer reset
Charger Configuration
Bit 5 CHG_CONFIG[1] R/W 0 00 – Charge Disable, 01 – Charge Default: Charge Battery (01)
Battery,
Bit 4 CHG_CONFIG[0] R/W 1
10/11 – OTG
Minimum System Voltage Limit
Bit 3 SYS_MIN[2] R/W 1 0.4 V Offset: 3.0 V, Range 3.0 V to 3.7 V
Bit 2 SYS_MIN[1] R/W 0 0.2 V Default: 3.5 V (101)

Bit 1 SYS_MIN[0] R/W 1 0.1 V


Boost Mode Current Limit
Bit 0 BOOST_LIM R/W 1 0 – 500 mA, 1 – 1.3 A Default: 1.3 A (1)

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8.5.1.3 Charge Current Control Register REG02 (reset = 01100000, or 60)

Figure 27. REG02 Charge Current Control Register Format


7 6 5 4 3 2 1 0
ICHG[5] ICHG[4] ICHG[3] ICHG[2] ICHG[1] ICHG[0] Reserved FORCE_20PCT
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 9. REG02 Charge Current Control Register Description


BIT FIELD TYPE RESET DESCRIPTION NOTE
Fast Charge Current Limit
Bit 7 ICHG[5] R/W 0 2048 mA Offset: 512 mA
Bit 6 ICHG[4] R/W 1 1024 mA Range: 512 to 2496 mA
Default: 2048 mA (011000)
Bit 5 ICHG[3] R/W 1 512 mA
Bit 4 ICHG[2] R/W 0 256 mA
Bit 3 ICHG[1] R/W 0 128 mA
Bit 2 ICHG[0] R/W 0 64 mA
Bit 1 Reserved R/W 0 0 - Reserved Reserved. Must write "0"
Bit 0 FORCE_20PCT R/W 0 0 - ICHG as REG02[7:2] (Fast Charge Default: ICHG as REG02[7:2] (Fast Charge
Current Limit) and REG03[7:4] (Pre- Current Limit) and REG03[7:4] (Pre-Charge
Charge Current Limit) programmed Current Limit) programmed (0)
1 - ICHG as 20% of REG02[7:2] (Fast
Charge Current Limit) and 50% of
REG03[7:4] (Pre-Charge Current Limit)
programmed

8.5.1.4 Pre-Charge/Termination Current Control Register REG03 (reset = 00010001, or 11)

Figure 28. REG03 Pre-Charge/Termination Current Control Register Format


7 6 5 4 3 2 1 0
IPRECHG[3] IPRECHG[2] IPRECHG[1] IPRECHG[0] ITERM[3] ITERM[2] ITERM[1] ITERM[0]
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 10. REG03 Pre-Charge/Termination Current Control Register Description


BIT FIELD TYPE RESET DESCRIPTION NOTE
Pre-Charge Current Limit
Bit 7 IPRECHG[3] R/W 0 1024 mA Offset: 128 mA,
Bit 6 IPRECHG[2] R/W 0 512 mA Range: 128 mA to 2048 mA
Default: 256 mA (0001)
Bit 5 IPRECHG[1] R/W 0 256 mA
Bit 4 IPRECHG[0] R/W 1 128 mA
Termination Current Limit
Bit 3 ITERM[3] R/W 0 1024 mA Offset: 128 mA
Bit 2 ITERM[2] R/W 0 512 mA Range: 128 mA to 2048 mA
Default: 256 mA (0001)
Bit 1 ITERM[1] R/W 0 256 mA
Bit 0 ITERM[0] R/W 1 128 mA

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8.5.1.5 Charge Voltage Control Register REG04 (reset = 11001010, or CA)

Figure 29. REG04 Charge Voltage Control Register Format


7 6 5 4 3 2 1 0
VREG[5] VREG[4] VREG[3] VREG[2] VREG[1] VREG[0] BATLOWV VRECHG
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 11. REG04 Charge Voltage Control Register Description


BIT FIELD TYPE RESET DESCRIPTION NOTE
Charge Voltage Limit
Bit 7 VREG[5] R/W 1 512 mV Offset: 3.504 V
Bit 6 VREG[4] R/W 1 256 mV Range: 3.504 V to 4.400 V (111000)
Default: 4.208 V (101100) Default: 4.304 V
Bit 5 VREG[3] R/W 0 128 mV (110010)
Bit 4 VREG[2] R/W 0 64 mV
Bit 3 VREG[1] R/W 1 32 mV
Bit 2 VREG[0] R/W 0 16 mV
Battery Precharge to Fast Charge Threshold
Bit 1 BATLOWV R/W 1 0 – 2.8 V, 1 – 3.0 V Default: 3.0 V (1)
Battery Recharge Threshold (below battery regulation voltage)
Bit 0 VRECHG R/W 0 0 – 100 mV, 1 – 300 mV Default: 100 mV (0)

8.5.1.6 Charge Termination/Timer Control Register REG05 (reset = 10011010, or 9A)

Figure 30. REG05 Charge Termination/Timer Control Register Format


7 6 5 4 3 2 1 0
EN_TERM TERM_STAT WATCHDOG[1] WATCHDOG[0] EN_TIMER CHG_TIMER[1] CHG_TIMER[0] Reserved
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 12. REG05 Charge Termination/Timer Control Register Description


BIT FIELD TYPE RESET DESCRIPTION NOTE
Charging Termination Enable
Bit 7 EN_TERM R/W 1 0 – Disable, 1 – Enable Default: Enable termination (1)
Termination Indicator Threshold
Bit 6 TERM_STAT R/W 0 0 – Match ITERM, Default Match ITERM (0)
1 – STAT pin high before actual
termination when charge current
below 800 mA
I2C Watchdog Timer Setting
Bit 5 WATCHDOG[1] R/W 0 00 – Disable timer, 01 – 40 s, Default: 40 s (01)
10 – 80 s, 11 – 160 s
Bit 4 WATCHDOG[0] R/W 1
Charging Safety Timer Enable
Bit 3 EN_TIMER R/W 1 0 – Disable, 1 – Enable Default: Enable (1)
Fast Charge Timer Setting
Bit 2 CHG_TIMER[1] R/W 0 00 – 5 hrs, 01 – 8 hrs, 10 – 12 Default: 8 hours (01)
hrs, 11 – 20 hrs (See Charging Safety Timer for details)
Bit 1 CHG_TIMER[0] R/W 1
Bit 0 Reserved R/W 0 0 - Reserved Reserved. Must write "0"

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8.5.1.7 Thermal Regulation Control Register REG06 (reset = 00000011, or 03)

Figure 31. REG06 Thermal Regulation Control Register Format


7 6 5 4 3 2 1 0
Reserved Reserved Reserved Reserved Reserved Reserved TREG[1] TREG[0]
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 13. REG06 Thermal Regulation Control Register Description


BIT FIELD TYPE RESET DESCRIPTION NOTE
Bit 7 Reserved R/W 0 0 - Reserved Reserved. Must write "0"
Bit 6 Reserved R/W 0 0 - Reserved Reserved. Must write "0"
Bit 5 Reserved R/W 0 0 - Reserved Reserved. Must write "0"
Bit 4 Reserved R/W 0 0 - Reserved Reserved. Must write "0"
Bit 3 Reserved R/W 0 0 - Reserved Reserved. Must write "0"
Bit 2 Reserved R/W 0 0 - Reserved Reserved. Must write "0"
Thermal Regulation Threshold
Bit 1 TREG[1] R/W 1 00 – 60°C, 01 – 80°C, 10 – Default: 120°C (11)
100°C, 11 – 120°C
Bit 0 TREG[0] R/W 1

8.5.1.8 Misc Operation Control Register REG07 (reset = 01001011, or 4B)

Figure 32. REG07 Misc Operation Control Register Format


7 6 5 4 3 2 1 0
DPDM_EN TMR2X_EN BATFET_Disable Reserved Reserved Reserved INT_MASK[1] INT_MASK[0]
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 14. REG07 Misc Operation Control Register Description


BIT FIELD TYPE RESET DESCRIPTION NOTE
Set default input current limit from PSEL/OTG pins
Bit 7 DPDM_EN R/W 0 0 – Not in D+/D– detection; Default: Not in D+/D– detection (0),
1 – Force D+/D– detection Back to 0 after detection complete
Safety Timer Setting during Input DPM and Thermal Regulation
Bit 6 TMR2X_EN R/W 1 0 – Safety timer not slowed by 2X during Default: Safety timer slowed by 2X (1)
input DPM or thermal regulation,
1 – Safety timer slowed by 2X during
input DPM or thermal regulation
Force BATFET Off
Bit 5 BATFET_Disable R/W 0 0 – Allow Q4 turn on, 1 – Turn off Q4 Default: Allow Q4 turn on(0)
Bit 4 Reserved R/W 0 0 – Reserved
Bit 3 Reserved R/W 1 1 – Reserved
Bit 2 Reserved R/W 0 0 – Reserved
Bit 1 INT_MASK[1] R/W 1 0 – No INT during CHRG_FAULT, 1 – Default: INT on CHRG_FAULT (1)
INT on CHRG_FAULT
Bit 0 INT_MASK[0] R/W 1 0 – No INT during BAT_FAULT, 1 – INT Default: INT on BAT_FAULT (1)
on BAT_FAULT

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8.5.1.9 System Status Register REG08

Figure 33. REG08 System Status Register Format


7 6 5 4 3 2 1 0
VBUS_STAT[1] VBUS_STAT[0] CHRG_STAT[1] CHRG_STAT[0] DPM_STAT PG_STAT THERM_STAT VSYS_STAT
R R R R R R R R
LEGEND: R = Read only; -n = value after reset

Table 15. REG08 System Status Register Description


BIT FIELD TYPE DESCRIPTION
Bit 7 VBUS_STAT[1] R 00 – Unknown (no input, or DPDM detection incomplete), 01 – USB host, 10 – Adapter
port, 11 – OTG
Bit 6 VBUS_STAT[0] R
Bit 5 CHRG_STAT[1] R 00 – Not Charging, 01 – Pre-charge (<VBATLOWV), 10 – Fast Charging, 11 – Charge
Termination Done
Bit 4 CHRG_STAT[0] R
Bit 3 DPM_STAT R 0 – Not DPM, 1 – VINDPM or IINDPM
Bit 2 PG_STAT R 0 – Not Power Good, 1 – Power Good
Bit 1 THERM_STAT R 0 – Normal, 1 – In Thermal Regulation
Bit 0 VSYS_STAT R 0 – Not in VSYSMIN regulation (BAT > VSYSMIN), 1 – In VSYSMIN regulation (BAT <
VSYSMIN)

8.5.1.10 Fault Register REG09

Figure 34. REG09 Fault Register Format


7 6 5 4 3 2 1 0
WATCHDOG_ BOOST_ CHRG_FAULT[1] CHRG_FAULT[0] BAT_FAULT NTC_FAULT[2] NTC_FAULT[1] NTC_FAULT[0]
FAULT FAULT
R R R R R R R R
LEGEND: R = Read only; -n = value after reset

Table 16. REG09 Fault Register Description


BIT FIELD TYPE DESCRIPTION
Bit 7 WATCHDOG_FAULT R 0 – Normal, 1- Watchdog timer expiration
Bit 6 BOOST_FAULT R 0 – Normal, 1 – VBUS overloaded (OCP), or VBUS OVP in boost mode
Bit 5 CHRG_FAULT[1] R 00 – Normal, 01 – Input fault (VBUS OVP or VBAT < VBUS < 3.8 V), 10 - Thermal
shutdown,
Bit 4 CHRG_FAULT[0] R
11 – Charge Safety Timer Expiration
Bit 3 BAT_FAULT R 0 – Normal, 1 – BATOVP
Bit 2 NTC_FAULT[2] R 000 – Normal, 101 – Cold, 110 – Hot
Bit 1 NTC_FAULT[1] R
Bit 0 NTC_FAULT[0] R

32 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated

Product Folder Links: bq24196


bq24196
www.ti.com SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014

8.5.1.11 Vender / Part / Revision Status Register REG0A (reset = 00101011, or 2B)

Figure 35. REG0A Vender / Part / Revision Status Register Format


7 6 5 4 3 2 1 0
Reserved Reserved PN[2] PN[1] PN[0] TS_PROFILE DEV_REG[0] DEV_REG[1]
R R R R R R R R
LEGEND: R = Read only; -n = value after reset

Table 17. REG0A Vender / Part / Revision Status Register Description


BIT FIELD TYPE RESET DESCRIPTION
Bit 7 Reserved R 0 0 - Reserved
Bit 6 Reserved R 0 0 - Reserved
Device Configuration
Bit 5 PN[2] R 1 101
Bit 4 PN[1] R 0
Bit 3 PN[0] R 1
Bit 2 TS_PROFILE R 0 0 - Cold/Hot window
Bit 1 DEV_REG[0] R 1 11
Bit 0 DEV_REG[1] R 1

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bq24196
SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014 www.ti.com

9 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

9.1 Application Information


A typical application consists of the device configured as an I2C controlled power path management device and a
single cell Li-Ion battery charger for single cell Li-Ion and Li-polymer batteries used in a wide range of tablets and
other portable devices. It integrates an input reverse-blocking FET (RBFET, Q1), high-side switching FET
(HSFET, Q2), low-side switching FET (LSFET, Q3), and BATFET (Q4) between the system and battery. The
device also integrates a bootstrap diode for the high-side gate drive.

9.2 Typical Application

bq24196 1μH SYS: 3.5V-4.45V


5V USB VBUS SW
SDP/DCP 1μF PMID 10μF 10μF 10μF 10μF
47nF
6.8μF
BTST
REGN
1μF
SYS
PGND

2.2kW
SYS
VREF PG
STAT
BAT
10kW 10kW 10kW 353W 10μF
(1.5A max)
SDA
ILIM
Host SCL
REGN
INT
OTG 5.52kW
CE TS1
TS2
31.23kW 10kW
PHY PSEL
(103-AT)
Power Pad

Figure 36. bq24196 with PSEL from PHY, Charging from SDP/DCP, and Two Thermistor Connections

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bq24196
www.ti.com SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014

Typical Application (continued)

bq24196 2.2μH SYS: 3.5V-4.35V


5V USB VBUS SW
15V Adapter 1μF PMID 47nF
6.8μF 10μF 10μF
BTST
REGN
4.7μF
SYS
PGND

2.2kW
SYS
VREF PG
STAT BAT
10kW 10kW 10kW 353W 10μF
(1.5A max)
SDA ILIM
Host SCL
REGN
INT
OTG 5.52kW
CE TS1
TS2
31.23kW 10kW
PHY PSEL
(103-AT)
Power Pad

Figure 37. bq24196 with PSEL, USB On-The-Go (OTG), and Single Thermistor Connection

9.2.1 Design Requirements

Table 18. Design Requirements


DESIGN PARAMETER EXAMPLE VALUE
Input voltage 3.9 V to 17 V
Input current limit 3000 mA
Fast charge current 2500 mA
Boost mode output current 1.3 A

9.2.2 Detailed Design Procedure

9.2.2.1 Inductor Selection


The bq24196 has 1.5-MHz switching frequency to allow the use of small inductor and capacitor values. The
Inductor saturation current should be higher than the charging current (ICHG) plus half the ripple current (IRIPPLE):
ISAT ³ ICHG + (1/ 2 ) IRIPPLE (4)
The inductor ripple current depends on input voltage (VBUS), duty cycle (D = VBAT/VVBUS), switching frequency
(fs) and inductance (L):
V ´ D ´ (1 - D)
 IRIPPLE = IN
¦s ´ L (5)
The maximum inductor ripple current happens with D = 0.5 or close to 0.5. Usually inductor ripple is designed in
the range of (20 to 40%) maximum charging current as a trade-off between inductor size and efficiency for a
practical design. Typical inductor value is 2.2 µH.

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bq24196
SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014 www.ti.com

9.2.2.2 Input Capacitor


Input capacitor should have enough ripple current rating to absorb input switching ripple current. The worst case
RMS ripple current is half of the charging current when duty cycle is 0.5. If the converter does not operate at
50% duty cycle, then the worst case capacitor RMS current ICIN occurs where the duty cycle is closest to 50%
and can be estimated by the following equation:
I CIN = ICHG ´ D ´ (1 - D) (6)
For best performance, VBUS should be decouple to PGND with 1-μF capacitance. The remaining input capacitor
should be place on PMID.
Low ESR ceramic capacitor such as X7R or X5R is preferred for input decoupling capacitor and should be
placed to the drain of the high side MOSFET and source of the low side MOSFET as close as possible. Voltage
rating of the capacitor must be higher than normal input voltage level. 25-V rating or higher capacitor is preferred
for 15-V input voltage.

9.2.2.3 Output Capacitor


Output capacitor also should have enough ripple current rating to absorb output switching ripple current. The
output capacitor RMS current ICOUT is given:
I
I COUT = RIPPLE » 0.29 ´ IRIPPLE
2´ 3 (7)
The output capacitor voltage ripple can be calculated as follows:
VOUT æç V ö
DVO = 2 ç
1 - OUT ÷
8LC¦ s è VIN ÷
ø (8)
At certain input/output voltage and switching frequency, the voltage ripple can be reduced by increasing the
output filter LC.
The charger device has internal loop compensator. To get good loop stability, the resonant frequency of the
output inductor and output capacitor should be designed between 15 kHz and 25 kHz. With 2.2-µH inductor, the
typical output capacitor value is 20 µF. The preferred ceramic capacitor is 6 V or higher rating, X7R or X5R.

36 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated

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bq24196
www.ti.com SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014

9.2.3 Application Performance Plots

VBUS VBUS
5V/div 5V/div

REGN REGN
5V/div 5V/div

SYS SYS
2V/div 2V/div

/PG IBAT
2V/div 2A/div

40ms/div 100ms/div
VBAT 3.2 V

Figure 38. Power Up with Charge Disabled Figure 39. Power Up with Charge Enabled

STAT STAT
2V/div 2V/div

/CE /CE
5V/div 5V/div

SW SW
5V/div 10V/div

IBAT
1A/div IBAT
1A/div

400us/div 4us/div
VBUS 5 V VBUS 12 V

Figure 40. Charge Enable Figure 41. Charge Disable

SYS SYS
3.4V Offset 3.4V offset
200mV/div 200mV/div

ISYS
5A/div

IIN IIN
2A/div 1A/div

IBAT
ISYS 2A/div
2A/div

2ms/div 2ms/div
VBUS 5 V, IIN 3 A, Charge Disable VBUS 9 V, IIN 1.5 A, VBAT 3.8 V

Figure 42. Input Current DPM Response without Battery Figure 43. Load Transient During Supplement Mode

Copyright © 2012–2014, Texas Instruments Incorporated Submit Documentation Feedback 37


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bq24196
SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014 www.ti.com

SYS
STAT 3.4V offset
2V/div 100mV/div

/CE
5V/div
SW
5V/div

SW
10V/div

IL
IBAT 1A/div
1A/div

4us/div 4us/div
VBUS 12 V, VBAT 3.8 V, ICHG 1.5 A VBUS 9 V, No Battery, ISYS 10 mA, Charge Disable

Figure 44. PWM Switching Waveform Figure 45. PFM Switching Waveform

VBUS
5V offset
SW 200mV/div
5V/div
IBAT
500mA/div

IL
1A/div IVBUS
500mA/div

400ns/div 4ms/div
VBAT 3.8 V, ILOAD 1 A VBAT 3.8 V

Figure 46. Boost Mode Switching Waveform Figure 47. Boost Mode Load Transient

38 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated

Product Folder Links: bq24196


bq24196
www.ti.com SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014

10 Power Supply Recommendations


In order to provide an output voltage on SYS, the bq2419x require a power supply between 3.9 V and 17 V input
with at least 100 mA current rating connected to VBUS; or, a single-cell Li-Ion battery with voltage > VBATUVLO
connected to BAT. The source current rating needs to be at least 3 A in order for the buck converter of the
charger to provide maximum output power to SYS.

11 Layout

11.1 Layout Guidelines


The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the
components to minimize high frequency current path loop (see Figure 48) is important to prevent electrical and
magnetic field radiation and high frequency resonant problems. Here is a PCB layout priority list for proper
layout. Layout PCB according to this specific order is essential.
1. Place input capacitor as close as possible to PMID pin and GND pin connections and use shortest copper
trace connection or GND plane.
2. Place inductor input terminal to SW pin as close as possible. Minimize the copper area of this trace to lower
electrical and magnetic field radiation but make the trace wide enough to carry the charging current. Do not
use multiple layers in parallel for this connection. Minimize parasitic capacitance from this area to any other
trace or plane.
3. Put output capacitor near to the inductor and the IC. Ground connections need to be tied to the IC ground
with a short copper trace connection or GND plane.
4. Route analog ground separately from power ground. Connect analog ground and connect power ground
separately. Connect analog ground and power ground together using power pad as the single ground
connection point. Or using a 0-Ω resistor to tie analog ground to power ground.
5. Use single ground connection to tie charger power ground to charger analog ground. Just beneath the IC.
Use ground copper pour but avoid power pins to reduce inductive and capacitive noise coupling.
6. Decoupling capacitors should be placed next to the IC pins and make trace connection as short as possible.
7. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB ground.
Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the
other layers.
8. The via size and number should be enough for a given current path.
See the EVM design for the recommended component placement with trace and via locations. For the VQFN
information, refer to SCBA017 and SLUA271.

Figure 48. High Frequency Current Path

Copyright © 2012–2014, Texas Instruments Incorporated Submit Documentation Feedback 39


Product Folder Links: bq24196
bq24196
SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014 www.ti.com

11.2 Layout Example

CREGN CBTST
CPMID
RBTST

PGND Top layer


PGND L
CBUS

PGND 2nd layer (PGND)


VBUS
CSYS via
PIN1 VSYS
PGND PGND on
PGND
VBAT Top layer
CBAT
PGND PGND

Figure 49. Layout Example Diagram

40 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated

Product Folder Links: bq24196


bq24196
www.ti.com SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014

12 Device and Documentation Support

12.1 Documentation Support


12.1.1 Related Documentation
bq24196 EVM (PWR021) User’s Guide (SLUUA14)
Quad Flatpack No-Lead Logic Packages Application Report (SCBA017)
QFN/SON PCB Attachment Application Report (SLUA271)

12.2 Trademarks
All trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

Copyright © 2012–2014, Texas Instruments Incorporated Submit Documentation Feedback 41


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bq24196
SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014 www.ti.com

13 Mechanical, Packaging, and Orderable Information


The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

42 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated

Product Folder Links: bq24196


PACKAGE OPTION ADDENDUM

www.ti.com 6-Feb-2020

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)

BQ24196RGER ACTIVE VQFN RGE 24 3000 Green (RoHS NIPDAU Level-2-260C-1 YEAR -40 to 85 BQ24196
& no Sb/Br)
BQ24196RGET ACTIVE VQFN RGE 24 250 Green (RoHS NIPDAU Level-2-260C-1 YEAR -40 to 85 BQ24196
& no Sb/Br)
HPA01197RGER ACTIVE VQFN RGE 24 3000 Green (RoHS NIPDAU Level-2-260C-1 YEAR -40 to 85 BQ24196
& no Sb/Br)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

Addendum-Page 1
PACKAGE OPTION ADDENDUM

www.ti.com 6-Feb-2020

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
PACKAGE MATERIALS INFORMATION

www.ti.com 18-Jan-2018

TAPE AND REEL INFORMATION

*All dimensions are nominal


Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ24196RGER VQFN RGE 24 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2
BQ24196RGET VQFN RGE 24 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2

Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION

www.ti.com 18-Jan-2018

*All dimensions are nominal


Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
BQ24196RGER VQFN RGE 24 3000 367.0 367.0 35.0
BQ24196RGET VQFN RGE 24 250 210.0 185.0 35.0

Pack Materials-Page 2
GENERIC PACKAGE VIEW
RGE 24 VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD

Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.

4204104/H
PACKAGE OUTLINE
RGE0024H VQFN - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD

4.1 A
B
3.9

4.1
PIN 1 INDEX AREA 3.9

1 MAX C

SEATING PLANE
0.05
0.00 0.08 C

2X 2.5 (0.2) TYP


7 12

20X 0.5
6
13

2X 25 SYMM
2.5

1 18
PIN 1 ID 24X 0.30
0.18
(OPTIONAL) 24 19 0.1 C A B
SYMM
24X 0.48
0.28
0.05 C
4219016 / A 08/2017
NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

www.ti.com
EXAMPLE BOARD LAYOUT
RGE0024H VQFN - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
(3.825)

( 2.7)
24 19

24X (0.58)

24X (0.24)
1
18
20X (0.5)

SYMM 25
(3.825)

2X
(1.1)
TYP

6 13

(R0.05)

7 12
2X(1.1)
SYMM

LAND PATTERN EXAMPLE


SCALE: 20X

0.07 MAX 0.07 MIN


ALL AROUND METAL ALL AROUND
SOLDER MASK
OPENING
SOLDER MASK METAL UNDER
OPENING SOLDER MASK

NON SOLDER MASK


DEFINED SOLDER MASK
(PREFERRED) DEFINED

SOLDER MASK DETAILS


4219016 / A 08/2017

NOTES: (continued)

4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments
literature number SLUA271 (www.ti.com/lit/slua271).
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
EXAMPLE STENCIL DESIGN
RGE0024H VQFN - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD

(3.825)

4X ( 1.188)
24 19

24X (0.58)
24X (0.24)
1
18
20X (0.5)

SYMM (3.825)
(0.694)
TYP

6 13

(R0.05) TYP 25

METAL
TYP 7 12
(0.694)
TYP
SYMM

SOLDER PASTE EXAMPLE


BASED ON 0.125 mm THICK STENCIL

EXPOSED PAD
78% PRINTED COVERAGE BY AREA
SCALE: 20X

4219016 / A 08/2017

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations..

www.ti.com
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AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
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