HGTP15N40C1, 40E1, 50C1, 50E1,

HGTH20N40C1, 40E1, 50C1, 50E1

15A, 20A,
April 1995 400V and 500V N-Channel IGBTs

Features Packages
• 15A and 20A, 400V and 500V HGTH-TYPES JEDEC TO-218AC
EMITTER
• VCE(ON) 2.5V
COLLECTOR
• TFI 1µs, 0.5µs GATE
COLLECTOR
• Low On-State Voltage (FLANGE)

• Fast Switching Speeds

• High Input Impedance
• No Anti-Parallel Diode

Applications
• Power Supplies HGTP-TYPES JEDEC TO-220AB
• Motor Drives EMITTER
COLLECTOR
(FLANGE) COLLECTOR
• Protection Circuits GATE

Description
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits. Terminal Diagram
PACKAGING AVAILABILITY N-CHANNEL ENHANCEMENT MODE
PART NUMBER PACKAGE BRAND C
HGTH20N40C1 TO-218AC G20N40C1
HGTH20N40E1 TO-218AC G20N40E1
HGTH20N50C1 TO-218AC G20N50C1 G

HGTH20N50E1 TO-218AC G20N50E1

HGTP15N40C1 TO-220AB G15N40C1 E
HGTP15N40E1 TO-220AB G15N40E1
HGTP15N50C1 TO-220AB G15N50C1
HGTP15N50E1 TO-220AB G15N50E1
NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

HGTH20N40C1 HGTH20N50C1 HGTP15N40C1 HGTP15N50C1
HGTH20N40E1 HGTH20N50E1 HGTP15N40E1 HGTP15N50E1 UNITS
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES 400 500 400 500 V
Collector-Gate Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . VCGR 400 500 400 500 V
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.) -5 -5 -5 -5 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE ±20 ±20 ±20 ±20 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC 20 20 15 15 A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 35 35 35 35 A
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD 100 100 75 75 W
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . 0.8 0.8 0.6 0.6 W/oC
Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150 oC
-55 to +150 -55 to +150 -55 to +150

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. File Number 2174.3
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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 Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1

Electrical Specifications TC = +25oC, Unless Otherwise Specified

LIMITS

HGTH20N40C1, E1, HGTH20N50C1, E1,

HGTP15N40C1, E1 HGTP15N50C1, E1

PARAMETERS SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS

Collector-Emitter Breakdown BVCES IC = 1mA, VGE = 0 400 - 500 - V

Voltage

Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2.0 4.5 2.0 4.5 V

Zero-Gate Voltage Collector ICES VCE = 400V, TC = +25oC - 250 - - µA

Current
VCE = 500V, TC = +25oC - - - 250 µA

VCE = 400V, TC = +125oC - 1000 - - µA

VCE = 500V, TC = +125oC - - - 1000 µA

Gate-Emitter Leakage Current IGES VGE = ±20V, VCE = 0 - 100 - 100 nA

Reverse Collector-Emitter ICE RGE = 0Ω, VEC = 5V - -5 - -5 mA

Leakage Current

Collector-Emitter on Voltage VCE(ON) IC = 20A, VGE = 10V - 2.5 - 2.5 V

IC = 35A, VGE = 20V - 3.2 - 3.2 V

Gate-Emitter Plateau Voltage VGEP IC = 10A, VCE = 10V - 6 (Typ) - 6 (Typ) V

On-State Gate Charge QG(ON) IC = 10A, VCE = 10V - 33 (Typ) - 33 (Typ) nC

Turn-On Delay Time tD(ON)I IC = 20A, VCE(CLP) = 300V, - 50 - 50 ns

L = 25µH, TJ = +100oC,
Rise Time tRI VGE = 10V, RG = 25Ω - 50 - 50 ns

Turn-Off Delay Time tD(OFF)I - 400 - 400 ns

Fall Time tFI

40E1, 50E1 680 (Typ) 1000 680 (Typ) 1000 ns

40C1, 50C1 400 500 400 500 ns

Turn-Off Energy Loss per Cycle WOFF IC = 10A, VCE(CLP) = 300V,

(Off Switching Dissipation = L = 25µH, TJ = +100oC,
WOFF x Frequency) VGE = 10V, RG = 25Ω

40E1, 50E1 1810 (Typ) µJ

40C1, 50C1 1070 (Typ) µJ

Thermal Resistance RθJC oC/W

HGTH, HGTM - 1.25 - 1.25
Junction-to-Case
oC/W
HGTP - 1.67 - 1.67

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

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 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1

Typical Performance Curves

40
VGE = 10V, RGEN = RGS = 50Ω
35
ICE, COLLECTOR CURRENT (A)

RATED POWER DISSIPATION (%)

100
30
80
25

20 60

15
40
10
20
5

0
-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175 0 +25 +50 +75 +100 +125 +150
TJ , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)

FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25Ω, FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING
VGE = 0V ARE THE MIN. ALLOWABLE VALUES CURVE

35
NORMALIZED GATE THRESHOLD VOLTAGE

PULSE TEST, VCE = 10V

VGE = VCE, IC = 1mA
PULSE DURATION = 80µs
1.3 30 DUTY CYCLE = 0.5% MAX.
ICE, COLLECTOR CURRENT (A)

1.2
25
1.1
20
1.0
15
0.9

0.8 10
+25oC -40oC
0.7 5
+125oC
0
-50 0 +50 +100 +150 0 2.5 5.0 7.5 10.0
TC , JUNCTION TEMPERATURE (oC) VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT- FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
AGE vs JUNCTION TEMPERATURE

TC = +25oC
35 35
VGE = 20V VGE = 7V PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
ICE, COLLECTOR CURRENT (A)

30 VGE = 10V 30
ICE, COLLECTOR CURRENT (A)

DUTY CYCLE = 0.5% MAX.

VGE = 8V VGE = 6V
25 25

20 20

+25oC
15 15
VGE = 5V

10 10

5
5 VGE = 4V

0 0
0 1 2 3 4 5 0 1 2 3 4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE(ON) , COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE

vs COLLECTOR CURRENT

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 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1

Typical Performance Curves (Continued)

VCE(ON) , COLLECTOR-EMITTER ON VOLTAGE (V)

2700 3.00
f = 1MHz

2250 2.75
C, CAPACITANCE (pF)

IC = 20A, VGE = 10V

1800 2.50

CISS IC = 20A, VGE = 15V

1350 2.25

900 2.00

IC = 10A, VGE = 10V

450 1.75
COSS
CRSS IC = 10A, VGE = 15V
0 1.50
0 10 20 30 40 50 +25 +50 +75 +100 +125 +150
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE

VOLTAGE

400
IC = 20A, VGE = 10V, VCL = 300V WOFF = ∫ IC * VCEdt
L = 25µH, RG = 25Ω
VGE IC
tD(OFF)I , SWITCHING TIME (ns)

300

VCE

200

100

0
+25 +50 +75 +100 +125 +150
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL TURN-OFF DELAY TIME FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS

800 800
IC = 10A, VGE = 10V, VCL = 300V IC = 20A, VGE = 10V, VCL = 300V
700 L = 25µH, RG = 25Ω 700 L = 25µH, RG = 25Ω
tFI , SWITCHING TIME (ns)

600
tFI , SWITCHING TIME (ns)

600
40E1/50E1
500 500 40E1/50E1

400 400
40C1/50C1
40C1/50C1
300 300

200 200

100 100

0 0
+25 +50 +75 +100 +125 +150 +25 +50 +75 +100 +125 +150
TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL FALL TIME (IC = 10A) FIGURE 12. TYPICAL FALL TIME (IC = 20A)

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 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1

Typical Performance Curves (Continued)

1000 500 10
VGE = 10V, VCE(CLP) = 300V BVCES RL = 25Ω

VCE, COLLECTOR-EMITTER VOLTAGE (V)

900 IG(REF) = 0.76mA
L = 25µH, RG = 25Ω
WOFF , TURN-OFF ENERGY LOSS (µJ)

20A, 40E1/50E1

VGE , GATE-EMITTER VOLTAGE (V)

VGE = 10V
800 VCC = BVCES 8
GATE-
375 EMITTER
700 VOLTAGE
600 6
20A, 40C1/50C1 VCC = 0.25BVCES
500 250
NOTE:
400 4
FOR TURN-OFF GATE CURRENTS IN
10A, 40E1/50E1 EXCESS OF 3mA. VCE TURN-OFF IS
300 NOT ACCURATELY REPRESENTED
125 BY THIS NORMALIZATION.
200 2
10A, 40C1/50C1
100
COLLECTOR-EMITTER VOLTAGE
0
0 0
+25 +50 +75 +100 +125 +150 IG(REF) IG(REF)
20 TIME (µs) 80
TJ , JUNCTION TEMPERATURE (oC) IG(ACT) IG(ACT)

FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
SWITCHING LOSS/CYCLE STANT GATE CURRENT. (REFER TO APPLICA-
TION NOTES AN7254 AND AN7260 ON THE USE
OF NORMALIZED SWITCHING WAVEFORMS)

Test Circuit
RL = 4Ω

L = 25µH

VCC 80V
1/RG = 1/RGEN + 1/RGE

RGEN = 50Ω VCE(CLP) =

300V

20V
RGE = 50Ω
0V

FIGURE 15. INDUCTIVE SWITCHING TEST CIRCUIT

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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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