HGTG18N120BND

Data Sheet January 2000 File Number 4555.1

54A, 1200V, NPT Series N-Channel IGBT Features

with Anti-Parallel Hyperfast Diode • 54A, 1200V, TC = 25oC
The HGTG18N120BND is a Non-Punch Through (NPT)
• 1200V Switching SOA Capability
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
features of MOSFETs and bipolar transistors. This device • Short Circuit Rating
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor. • Low Conduction Loss

The IGBT is ideal for many high voltage switching Packaging

applications operating at moderate frequencies where low JEDEC STYLE TO-247
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49304.

Ordering Information
PART NUMBER PACKAGE BRAND

HGTG18N120BND TO-247 18N120BND

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
 HGTG18N120BND

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HGTG18N120BND UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 54 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 26 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 390 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V

Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V

Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA

TC = 125oC - 300 - µA

TC = 150oC - - 4 mA

Collector to Emitter Saturation Voltage VCE(SAT) IC = 18A, TC = 25oC - 2.45 2.7 V

VGE = 15V
TC = 150oC - 3.8 4.2 V

Gate to Emitter Threshold Voltage VGE(TH) IC = 150µA, VCE = VGE 6.0 7.0 - V

Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V, 100 - - A
L = 200µH, VCE(PK) = 1200V

Gate to Emitter Plateau Voltage VGEP IC = 18A, VCE = 0.5 BVCES - 10.5 - V

On-State Gate Charge QG(ON) IC = 18A, VGE = 15V - 165 200 nC

VCE = 0.5 BVCES
VGE = 20V - 220 250 nC

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC - 23 28 ns

ICE = 18A
Current Rise Time trI - 17 22 ns
VCE = 0.8 BVCES
Current Turn-Off Delay Time td(OFF)I VGE = 15V - 170 200 ns
RG = 3Ω
Current Fall Time tfI L = 1mH - 90 140 ns
Test Circuit (Figure 20)
Turn-On Energy EON - 1.9 2.4 mJ

Turn-Off Energy (Note 3) EOFF - 1.8 2.2 mJ

2
 HGTG18N120BND

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC - 21 26 ns
ICE = 18A
Current Rise Time trI - 17 22 ns
VCE = 0.8 BVCES
Current Turn-Off Delay Time td(OFF)I VGE = 15V - 205 240 ns
RG = 3Ω
Current Fall Time tfI L = 1mH - 140 200 ns
Test Circuit (Figure 20)
Turn-On Energy EON - 3.7 4.9 mJ

Turn-Off Energy (Note 3) EOFF - 2.6 3.1 mJ

Diode Forward Voltage VEC IEC = 18A - 2.6 3.2 V

Diode Reverse Recovery Time trr IEC = 18A, dIEC/dt = 200A/µs - 60 75 ns

IEC = 2A, dIEC/dt = 200A/µs - 44 55 ns

Thermal Resistance Junction To Case RθJC IGBT - - 0.32 oC/W

Diode - - 0.75 oC/W

NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A)

60 120
VGE = 15V TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH
ICE , DC COLLECTOR CURRENT (A)

50 100

40 80

30 60

20 40

10 20

0 0
25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400
TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TEMPERATURE

3
 HGTG18N120BND

Typical Performance Curves Unless Otherwise Specified (Continued)

tSC , SHORT CIRCUIT WITHSTAND TIME (µs)

30 300

ISC, PEAK SHORT CIRCUIT CURRENT (A)

TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 960V VCE = 960V, RG = 3Ω, TJ = 125oC
fMAX, OPERATING FREQUENCY (kHz)

TC = 75oC, VGE = 15V, IDEAL DIODE

25 250
100
ISC
50
20 200

15 150
10 tSC
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
TC VGE
fMAX2 = (PD - PC) / (EON + EOFF) o 15V 10 100
PC = CONDUCTION DISSIPATION 75oC
75 C 12V
(DUTY FACTOR = 50%) 110oC 15V
RØJC = 0.32oC/W, SEE NOTES 110oC 12V
1 5 50
5 10 20 30 40 12 13 14 15 16
ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

EMITTER CURRENT

ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

80 100
TC = -55oC TC = 25oC
80
60
TC = 25oC
TC = -55oC TC = 150oC
60

40
40
TC = 150oC

20
20
DUTY CYCLE < 0.5%, VGE = 12V DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs PULSE DURATION = 250µs
0
0
0 2 4 6 8 10 0 2 4 6 8 10
VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

12 4.5
RG = 3Ω, L = 1mH, VCE = 960V RG = 3Ω, L = 1mH, VCE = 960V
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON2 , TURN-ON ENERGY LOSS (mJ)

4.0
10
TJ = 150oC, VGE = 12V, VGE = 15V 3.5
TJ = 150oC, VGE = 12V OR 15V
8
3.0

6 2.5

2.0
4 TJ = 25oC, VGE = 12V OR 15V
1.5
2
1.0
TJ = 25oC, VGE = 12V, VGE = 15V
0 0.5
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

4
 HGTG18N120BND

Typical Performance Curves Unless Otherwise Specified (Continued)

40 120
RG = 3Ω, L = 1mH, VCE = 960V
RG = 3Ω, L = 1mH, VCE = 960V
tdI , TURN-ON DELAY TIME (ns)

100
35 TJ = 25oC, TJ = 150oC, VGE = 12V TJ = 25oC, TJ = 150oC, VGE = 12V

trI , RISE TIME (ns)

80
30

60
25
40

20
20
TJ = 25oC, TJ = 150oC, VGE = 15V TJ = 25oC OR TJ = 150oC, VGE = 15V
15 0
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

350
RG = 3Ω, L = 1mH, VCE = 960V 250
td(OFF)I , TURN-OFF DELAY TIME (ns)

RG = 3Ω, L = 1mH, VCE = 960V

225
300
200
VGE = 12V, VGE = 15V, TJ = 150oC
tfI , FALL TIME (ns)

175
250 TJ = 150oC, VGE = 12V OR 15V
150

200 125

100

150 75
TJ = 25oC, VGE = 12V OR 15V
VGE = 12V, VGE = 15V, TJ = 25oC 50
100 25
5 10 15 20 25 30 35 40
5 10 15 20 25 30 35 40
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
EMITTER CURRENT CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)

200 20
DUTY CYCLE < 0.5%, VCE = 20V IG(REF) = 2mA, RL = 33.3Ω, TC = 25oC
VGE , GATE TO EMITTER VOLTAGE (V)

PULSE DURATION = 250µs

150 15
VCE = 1200V VCE = 800V

100 10
TC = 25oC
VCE = 400V

50 5
TC = 150oC
TC = -55oC

0 0
6 7 8 9 10 11 12 13 14 15 0 50 100 150 200
VGE , GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

5
 HGTG18N120BND

Typical Performance Curves Unless Otherwise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

6 30
FREQUENCY = 1MHz DUTY CYCLE < 0.5%, TC = 110oC
PULSE DURATION = 250µs
5 25
C, CAPACITANCE (nF)

VGE = 15V OR 12V

CIES
4 20

VGE = 10V
3 15

2 10

1 COES 5

CRES
0 0
0 5 10 15 20 25 0 1 2 3 4 5
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE

100
0.5

0.2

0.1
10-1
0.05

0.02 t1

DUTY FACTOR, D = t1 / t2 PD
0.01
PEAK TJ = (PD X ZθJC X RθJC) + TC t2
SINGLE PULSE
10-2
10-5 10-4 10-3 10-2 10-1 100

t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

70
TC = 25oC, dIEC/dt = 200A/µs
100
60
IF, FORWARD CURRENT (A)

t, RECOVERY TIMES (ns)

50
trr
150oC 25oC
10 40

ta
30

20 tb
1

10
0 1 2 3 4 5 1 2 5 10 20
VF, FORWARD VOLTAGE (V) IF, FORWARD CURRENT (A)

FIGURE 18. DIODE FORWARD CURRENT vs FORWARD FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
VOLTAGE DROP

6
 HGTG18N120BND

Test Circuits and Waveforms

HGTG18N120BND
90%

VGE 10%
EON
EOFF
VCE
L = 1mH
90%
RG = 3Ω
+ ICE 10%

VDD = 960V td(OFF)I trI

- tfI
td(ON)I

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to Operating frequency information for a typical device
gate-insulation damage by the electrostatic discharge of (Figure 3) is presented as a guide for estimating device
energy through the devices. When handling these devices, performance for a specific application. Other typical
care should be exercised to assure that the static charge built frequency vs collector current (ICE) plots are possible using
in the handler’s body capacitance is not discharged through the information shown for a typical unit in Figures 5, 6, 7, 8, 9
the device. With proper handling and application procedures, and 11. The operating frequency plot (Figure 3) of a typical
however, IGBTs are currently being extensively used in device shows fMAX1 or fMAX2; whichever is smaller at each
production by numerous equipment manufacturers in military, point. The information is based on measurements of a
industrial and consumer applications, with virtually no typical device and is bounded by the maximum rated
damage problems due to electrostatic discharge. IGBTs can junction temperature.
be handled safely if the following basic precautions are taken:
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
1. Prior to assembly into a circuit, all leads should be kept Deadtime (the denominator) has been arbitrarily held to 10%
shorted together either by the use of metal shorting of the on-state time for a 50% duty factor. Other definitions
springs or by the insertion into conductive material such are possible. td(OFF)I and td(ON)I are defined in Figure 21.
as “ECCOSORBD™ LD26” or equivalent.
Device turn-off delay can establish an additional frequency
2. When devices are removed by hand from their carriers, limiting condition for an application other than TJM. td(OFF)I
the hand being used should be grounded by any suitable
is important when controlling output ripple under a lightly
means - for example, with a metallic wristband.
loaded condition.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
circuits with power on. allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
5. Gate Voltage Rating - Never exceed the gate-voltage The sum of device switching and conduction losses must not
rating of VGEM. Exceeding the rated VGE can result in exceed PD. A 50% duty factor was used (Figure 3) and the
permanent damage to the oxide layer in the gate region. conduction losses (PC) are approximated by
6. Gate Termination - The gates of these devices are PC = (VCE x ICE)/2.
essentially capacitors. Circuits that leave the gate
EON and EOFF are defined in the switching waveforms
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to shown in Figure 21. EON is the integral of the instantaneous
voltage buildup on the input capacitor due to leakage power loss (ICE x VCE) during turn-on and EOFF is the
currents or pickup. integral of the instantaneous power loss (ICE x VCE) during
7. Gate Protection - These devices do not have an internal turn-off. All tail losses are included in the calculation for
monolithic Zener diode from gate to emitter. If gate EOFF; i.e., the collector current equals zero (ICE = 0).
protection is required an external Zener is recommended.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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