Journal of Electronic Research and Application

OPEN

Introduction on Carbon Nanotubes (CNT) and Its

Applications in Electronic Circuits
Manu Mitra
The Institution of Electrical Engineers, USA

Abstract: Carbon Nanotubes (CNT) in nanotechnolo- Bottom up method is a promising and contradicting
gy field are legendary for its strength and chemical option for top down method, one which allows work-
inertness. Technically, we can alter carbon nanotubes ing of nano components rather than litho-graphically
based on our necessities and requirements such as cutting into greater bits into smaller and smaller pie-
single layered nanotube, double layered nanotube, ces. For example, DNA atoms, might be utilized to
multi layered nanotube etc. In this paper usage of control the association of nanoparticles. Another ex-
carbon nanotubes in semiconductor devices such as ample is carbon nanotubes. This may speed up the
nanomaterials, molecular dynamics of nanomaterials, capacity to 'develop' parts of a coordinated circuit, as
heterojunctions using carbon nanotubes, diodes and opposed to depending on top down strategies[1,2].
Graphene Field Effect Transistor (GFET), its
characteristics and data analysis are discussed. The Nanomaterials
major application of carbon nanotubes in electronic
circuits is not limiting to improves the electrical and Nanomaterials are usually characterized as materials
thermal conductivity due to its high stretchability planned and delivered to have auxiliary highlights
feature and they also have a long life span and better measuring hundred nanometers or less. In devices,
durability over traditional electronic circuit’s mate- various diverse nanomaterials are utilized monetarily
rials. for innovative work. The most common utilizing
nanomaterials for electronic and electrical hardware
Key words: Nanotechnolog; carbon nanotubes; elec- are carbon nanotubes and quantum specks for surface
tronic circuit; electronics; nano electronic materials; coatings, nanoparticles of silver[1,2].
nano electronics
Corresponding author: Manu Mitra, E-mail: Nanofabricating
manu.ieee@gmail.com
Assembling components at nanoscale is known as
Introduction Nanofabricating. Nanoabricating includes scaled-up,
solid, and savvy assembling of nanoscale materials,
In electronics, present method used in manufacturing structures, devices, and frameworks. It also incorpo-
of electronic devices is called “top down” method (i.e. rates research, advancement and various procedures
manufacturing nanoscale components and materials and progressively complex base up or self-gathering
from larger chunks) nonetheless researchers are now forms[1,2].
developing a new approach based on self-assembly of
Carbon Nanotubes in Semiconductor
atoms and molecules that is called “ bottom up ”
approach. Carbon nanotubes can be either 'metallic' or semi-
Top down method uses the creation of logically conductors relying upon the real method in which the
smaller structures to be made utilizing utilizes litho- carbon iotas (atoms) are gathered in the tube. The
graphy and related methods for the development of metallic structures have electrical conductivities thou-
electronic components and smaller scale electro me- sand times significant than copper and are presently
chanical frameworks. This method has encouraged being blended with polymers to make leading compo-
effective data and innovation activities. site materials for applications. For example, electro-
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magnetic protecting in cell phones and friction-based has been shown in supercapacitors and nanometer-
electricity reduction in automobiles. Their utilization sized transistors[1,2].

properties with the quantum standards of vitality

levels and electron waves, carbon nanotubes rise as
exceedingly unusual conveyors. Among various types
of nanotubes, single-walled carbon nanotubes
(SWCNTs) have the possibility to reforming current
electronic components in the industry. In spite of the
fact that business in electronic components has
effectively gained critical ground in the
measurements of transistors. However, it still faces
extraordinary hindrances in proceeding with
electronic scaling down because of essential physical
Fig.1 Depicts Conventional Unbiased PN Junction breaking points. Besides, there are considerable
financial motivating forces to shrink these individual
devices further, the cost and designing of
incorporating carbon nanotubes into ordinary
hardware has been restrictive. This test has animated
a lot of researches into how to utilize carbon
nanotubes in electronic devices, productively and
Fig.2 Depicts carbon nanotube heterojunction consists economically. One of the territories of research areas
of two Carbon Nanotube (CNT’s) of different includes the making of vast systems where carbon
chirality with similar radii with zero bias[3] nanotubes can be adjusted in preset examples,
enabling scientists to choose a particular area and
1 Nanomaterials chirality for carbon nanotube, and capacity to
The structure and geometry of carbon nanotubes coordinate the system into an in good condition
create a one of a kind electronic multifaceted nature, circuit[4].
halfway because of their size, since quantum material A simulation was performed on nanomaterials using
science oversees at the nanometer scale. Yet, graphite Gallium Arsenide (GaAs).
itself is an exceptionally uncommon material. While It took about fifteen iterations to attain consistency.
most of the electrical materials such as metals or Below are the graphs for total energy (Fig.3), density
semiconductors, graphite materials known as a semi- of states (Fig.4), electron occupation statistics (Fig.5)
metal. By consolidating graphite's semi-metallic and initial atomic structure (Fig.6).

Fig.3 Total Energy[5] Fig.4 Density of States[5]

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 Fig.5 Electron Occupation Statistics[5] Fig.6 Initial Atomic Structure[5]

Notes: Total electrostatic Energy = -324.0233836060

Fermi level = -0.262503 Ry, gap (0K) = 0.000490 Total Vxc Energy = -95.3333983575
Ry = 0.007 eV Total Energy (Rydberg) = -320.3849157817
Delta movement in electrons = 10.0394463841
One-center local charge defect = -0.00000911 2 Molecular Dynamics Nanomaterials
Slab dipole removed using vacuum LMCC
Using LMCC treatment of supercell electrostatics Carbon nanotubes can be exploited as atomic
Edge, average potentials= -2.893729660816D-02 molecular components and sub-atomic wires. Every
1.018629625094D-17 component depends on a suspended, crossed
Energy Analysis nanotube geometry that prompts bistable,
Spherical-atom Energy correction = -179.9794104973 electrostatically switchable ON/OFF states. Such
Full spherical atom trace Energy = -80.8025506243 electronic components can be used to control
Spherical-atom-Vxc trace Energy = 91.2925852479 expansive clusters utilizing carbon nanotube
Non-spherical Energy = 0.3333675033 interconnects[6].
Total Exc Energy = -151.2289074112 A simulation was performed on molecular dynamics
Total kinetic trace Energy = 101.7923470920 of nanomaterial Aluminium (Al) at nano level for a
Non-local ps-pot trace Energy = 53.0750281435 unit cell.

Fig. 7 Total Potential Energy[7] Fig.8 Kinetic Energy vs Time[7]

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 Fig.9 Temperature vs Time[7] Fig.10 Pressure vs Time[7]

Fig.11 Volume vs Time[7] Fig.12 xx Stress Tensor Component vs Time[7]

Fig.13 yy Stress Tensor Component vs Time[7] Fig.14 zz Stress Tensor Component vs Time[7]

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 Fig. 15 zy Stress Tensor Component vs Time[7] Fig.16 zx Stress Tensor Component vs Time[7]

Fig.17 xy Stress Tensor Component vs Time[7] Fig.18 Structure at 1.0 ps[7]

Notes:
Average Values per Atom
Potential Energy: -76.511714675346994
Kinetic Energy: 0.89256330854649224
Total Energy: -75.619151366800509 Fig.19 Depicts Heterojunction Structure of a Single
Temperature: 299.63501404050714 Walled Carbon Nanotube[8]
Volume: 16.979327999999857
Pressure: -2.3960296000603138E-002 A simulation was performed on Carbon Nanotube
Stress (GPa) | -0.114429 0.022192 0.053191 | Heterojunction (CNT HJ) at nano level. Carbon
Stress (GPa) | 0.022192 -0.043341 -0.017250 | Nanotube heterojunction consists of two Carbon
Stress (GPa) | 0.053191 -0.017250 0.085889 | Nanotubes (CNTs) of different chiralities connected
through an interface.
Spec. heat (k_B) 256.97755507656677
This simulation was used to construct atomistic
model of CNT HJs made of two CNTs of different
3 Carbon Nanotube (CNT) Heterojunction chiralities but similar radii and compute their
electronic structure and zero bias transport properties
with a nearest neighbor tight binding based Green’s
function approach.
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 Fig. 20 Density of States[8] Fig.21 Transmission Functions[8]

Notes: 4 Diode through Carbon Nanotube

Tube 1 (5,4)
Length: 20.0 Ang Diodes can be constructed using carbon nanotube
Radius: 3.06 Ang using the Gallium Arsenide (GaAs)
Type: Semiconducting A simulation was performed for Diode for the
Tube 2 (6,3) following parameters:
Length: 20.0 Ang Material: GaAs
Radius: 3.11 Ang Applied Bias: 0.25 V
Type: Metallic Lattice Temperature: 300K
Number of Atoms: 297 Conduction Band: Parabolic

Fig.22 Diode Structure[9]

Fig.23 Conduction Band in X-direction[9] Fig.24 Conduction Band in Y-direction[9]

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Fig.25 Electron Density Cuts in X-direction[9] Fig.26 Electron Density Cuts in Y-direction[9]

Fig.27 Potential Cuts in X-direction[9] Fig.28 Potential Cuts in Y-direction[9]

Fig.29 Electron Energy Cuts in X-direction[9] Fig.30 Electron Energy Cuts in Y-direction[9]

Fig.31 Electron Density[9] Fig.32 X-velocity[9]

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 Fig.33 Y-velocity[9] Fig.34 Electrostatic Potential[9]

Fig.35 X- Electric Field[9] Fig.36 Y- Electric Field[9]

The reason of utilizing Graphene field-effect

transistors (GFETs) is to decrease short-channel
impacts, and to enhance execution of transistors in
length scales. The utilization of semiconducting
graphene is vital given that metallic nanotubes can't
be completely turned off. The principle preferences of
this sort of transistors are: ballistic electron transport
over its lengths, higher current thickness, bring down
power utilization regarding silicon forms, and quicker
operation speed.
Fig. 37 Electron Energy[9] Carbon nanotube based field effect transistors (FETs)
have working attributes that are practically identical
Notes: with those components in light of silicon. The
Material: GaAs dynamic part in field-effect transistors is the electrical
Applied Bias: 0.25V channel built up by methods for the carbon nanotube
Lattice Temperature: 300K in substrate interfacing source and deplete terminals.
Diode Geometry SWNTs have been the perfect competitors as
L1: 50nm semiconducting materials because it can be doped to
LC: 50nm address the kind of conductivity either n-sort or p-sort.
L2: 50nam Along these lines, they can control the level of
electrical conduction. The carbon nanotube-based
Height: 50nm
FETs can accomplish high pick up units (> 10), a
Doping substantial on-off proportion (>105), and room
N+(1/cm3): 1.0e18 temperature operation[10]
N (1/cm3): 1.0e16 Below are the characteristics of Graphene Field
Effect Transistors are plotted (Fig. 38).
5 Graphene Field Effect Transistor (GFET)
Design through Carbon Nanotube

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 Fig.38 Isometric View of the Graphene Field Effect Transistor[10]

Fig.39 Depicts the Drain Current Fig.40 Depicts the Temperature versus Position[10]
versus Drain Voltage (Id vs Vd)[10]

Fig.41 Depicts the Field versus Position[10] Fig.42 Depicts the Velocity versus Position[10]

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 Fig.43 Depicts the Electron Density versus Position[10] Fig.44 Depicts the Hole Density versus Position[10]

Notes: Metal Contact Resistance: 350

Width: 1e-06m Thermal Conductivity of Insulator: 1.3
Length: 1e-06m Thermal Conductivity of Wafer Substrate: 100
Initial Temperature: 293K Thermal Conductivity of Graphene: 1000
Gate voltage: 0V Puddle Charge Density: 5e15
Dirac Voltage: 0V
Maximum Drain Current (A): 1e-3 6 Date Analysis
Drain Current Step: 50e-6
Top Gate Oxide Thickness: 1e-08m Data Analysis was performed for Gallium Arsenide
(GaAs) p-n junction at nano level data with 514
Mobility: 3000
points. Graphs are plotted for Band Structures,
Breakdown Temperature: 873K Current, Density and Materials.
Back Gate Oxide Thickness: 3e-07m
Band Structures

Fig.45 Depicts Band Edges[11] Fig.46 Depicts Band Gap[11]

Fig.47 Depicts Electric Field[11] Fig.48 Depicts Potential[11]

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Current

Fig.49 Depicts Fermi Level[11]

Density

Fig.50 Depicts Acceptors[11] Fig.51 Depicts Donors[11]

Fig.52 Depicts Dopants[11] Fig.53 Depicts Intrinsic Density[11]

Material

Fig.54 Depicts Doping Concentration[11] Fig. 55 Depicts Doping Profile[11]

Fig.56 Depicts Material Grid[11]

Interpretation of Graphs 7.1 Applications

Based on the graphs that are represented here; should There are many applications of carbon nanotubes
be considered while designing a GaAs p-n junction such as usage in nano electronics, nano transistors
using carbon nanotubes. and nano electronic components.
Large structures of carbon nanotubes can be used for
7 Applications and Advantages thermal management of electronic circuits. An
approximately 1 mm–thick carbon nanotube layer can
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be used to fabricate coolers. This material has very Doping profile, material grid are plotted
low density, ~20 times lower weight than a similar
copper structure, while the cooling properties are Acknowledgement
similar for the two materials[12].
Another application is nanowire-based nano photonic The author would like to thank Prof. Navarun Gupta,
devices, including light emitting diodes, lasers, solar Prof. Hassan Bajwa and Prof. Linfeng Zhang for their
cells, thermoelectric devices, and photodetectors[13]. academic support. Author also thanks anonymous
reviewers for their comments.
7.2 Advantages
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