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    B772

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    Hernan G Salazar
    This document provides specifications for a TO-92 plastic-encapsulated PNP transistor. Key details include: 1. It has a maximum power dissipation of 625mW at an ambient temperature of 25°C. 2. The transistor has a collector current rating of -3A and a collector-base voltage rating of -40V. 3. Electrical characteristics including current gains, cutoff currents, saturation voltages, and transition frequency are provided.

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    B772

    Uploaded by

    Hernan G Salazar
    154 views1 page
    This document provides specifications for a TO-92 plastic-encapsulated PNP transistor. Key details include: 1. It has a maximum power dissipation of 625mW at an ambient temperature of 25°C. 2. The transistor has a collector current rating of -3A and a collector-base voltage rating of -40V. 3. Electrical characteristics including current gains, cutoff currents, saturation voltages, and transition frequency are provided.

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    This document provides specifications for a TO-92 plastic-encapsulated PNP transistor. Key details include: 1. It has a maximum power dissipation of 625mW at an ambient temperature of 25°C. 2. The transistor has a collector current rating of -3A and a collector-base voltage rating of -40V. 3. Electrical characteristics including current gains, cutoff currents, saturation voltages, and transition frequency are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    154 views1 page

    B772

    Uploaded by

    Hernan G Salazar
    This document provides specifications for a TO-92 plastic-encapsulated PNP transistor. Key details include: 1. It has a maximum power dissipation of 625mW at an ambient temperature of 25°C. 2. The transistor has a collector current rating of -3A and a collector-base voltage rating of -40V. 3. Electrical characteristics including current gains, cutoff currents, saturation voltages, and transition frequency are provided.

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    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

    , LTD

    TO-92 Plastic-Encapsulate Transistors

    B772 TRANSISTOR (PNP)

    TO-92
    FEATURES
    Power dissipation
    1. EMITTER
    PCM: 625 mW (Tamb=25℃)
    2. COLLECTOR
    Collector current
    ICM: -3 A 3. BASE

    Collector-base voltage
    V(BR)CBO: -40 V 1 2 3

    Operating and storage junction temperature range

    TJ, Tstg: -55℃ to +150℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO Ic=-100µA ,IE=0 -40 V

    Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V

    Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -6 V

    Collector cut-off current ICBO VCB= -40 V, IE=0 -1 µA

    Collector cut-off current ICEO VCE=-30 V, IB=0 -10 µA

    Emitter cut-off current IEBO VEB=-6V, IC=0 -1 µA

    hFE(1) VCE= -2V, IC= -1A 60 400


    DC current gain
    hFE(2) VCE=-2V, IC= -100mA 32

    Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V

    Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V

    VCE= -5V, IC=-0.1A


    Transition frequency fT 50 MHz
    f = 10MHz

    CLASSIFICATION OF hFE(1)
    Rank R O Y GR

    Range 60-120 100-200 160-320 200-400

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