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    A42 PDF

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    Bond James
    This document provides specifications for an NPN bipolar junction transistor in a TO-92 package. It lists maximum ratings such as voltage and power limits. It also provides typical electrical characteristics including current gain, breakdown voltages, and saturation voltages. The transistor has an emitter, base, and collector and is classified based on its DC current gain range.

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    A42 PDF

    Uploaded by

    Bond James
    134 views3 pages
    This document provides specifications for an NPN bipolar junction transistor in a TO-92 package. It lists maximum ratings such as voltage and power limits. It also provides typical electrical characteristics including current gain, breakdown voltages, and saturation voltages. The transistor has an emitter, base, and collector and is classified based on its DC current gain range.

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    This document provides specifications for an NPN bipolar junction transistor in a TO-92 package. It lists maximum ratings such as voltage and power limits. It also provides typical electrical characteristics including current gain, breakdown voltages, and saturation voltages. The transistor has an emitter, base, and collector and is classified based on its DC current gain range.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    134 views3 pages

    A42 PDF

    Uploaded by

    Bond James
    This document provides specifications for an NPN bipolar junction transistor in a TO-92 package. It lists maximum ratings such as voltage and power limits. It also provides typical electrical characteristics including current gain, breakdown voltages, and saturation voltages. The transistor has an emitter, base, and collector and is classified based on its DC current gain range.

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    A42 TRANSISTOR (NPN)

    TO-92

    FEATURES
    1. EMITTER
    High voltage
    2. BASE
    MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
    Symbol Parameter Value Units 3. COLLECTOR

    VCBO Collector-Base Voltage 300 V


    VCEO Collector-Emitter Voltage 300 V 1 2 3

    VEBO Emitter-Base Voltage 5 V


    IC Collector Current -Continuous 500 mA
    PC Collector Power Dissipation 625 mW
    TJ Junction Temperature 150 ℃
    Tstg Storage Temperature -55-150 ℃
    RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW
    RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW
    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
    Parameter Symbol Test conditions MIN TYP MAX UNIT
    Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 300 V
    Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V
    Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
    Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA
    Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA
    hFE(1) VCE=10V, IC=1mA 60
    DC current gain hFE(2) VCE=10V, IC=10mA 80 250
    hFE(3) VCE=10V, IC=30mA 75
    Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.2 V
    Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 0.9 V
    Transition frequency fT VCE=20V, IC=10mA,f=30MHZ 50 MHz

    CLASSIFICATION OF hFE(2)
    Rank A B1 B2 C

    Range 80-100 100-150 150-200 200-250


    Typical Characteristics A42

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