DG333A, DG333AL: Vishay Siliconix
DG333A, DG333AL: Vishay Siliconix
DG333A, DG333AL: Vishay Siliconix
www.vishay.com
Vishay Siliconix
Precision Quad SPDT Analog Switch
DESCRIPTION FEATURES
The DG333A, DG333AL consist of four independently • ± 22 V supply voltage range
controlled single-pole double-throw analog switches. These • TTL and CMOS compatible logic
monolithic switch is designed to control analog signals
• Low on-resistance (25 Ω)
with a high degree of accuracy. The DG333A, DG333AL
minimize measurement errors by offering low on-resistance • On-resistance matched between channels (< 2 Ω)
(25 Ω typ), low leakage (20 pA typ.) and low charge • Flat on-resistance over analog signal range (Δ < 3 Ω)
injection performance. The DG333AL features micro-power • Low charge injection (1 pC)
operation (< 1 μW typ.). This is ideal for battery operated
systems. Pin 15 is not connected on the DG333A. • Low leakage (0.2 nA)
Top View
S2
V-
V+
DG333A
5V S1
VL Reg
(DG333AL)
Level V-
Shift/
Drive V+
INX
D
GND
V-
Fig. 1
SPECIFICATIONS
TEST CONDITIONS LIMITS D SUFFIX
UNLESS OTHERWISE SPECIFIED -40 °C to +85 °C
PARAMETER SYMBOL TEMP. a UNIT
V+ = 15 V, V- = -15 V
VIN = 2.4 V or 0.8 V e MIN. b TYP. c MAX. b
Analog Switch
Analog Signal Range d VANALOG Full V- - V+ V
Room - 25 45
Channel On-Resistance IS = -10 mA, VD = ± 10 V
Full - - 90
RDS(on)
IS = -10 mA, VD = ± 5 V Room - - 3
On-Resistance Flatness Ω
V+ = 16.5 V, V- = -16.5 V Full - - 5
Room - - 2
RDS(on) Match Between Channels f ΔRDS(on) IS = -10 mA, VD = ± 10 V
Full - - 4
VD = 15.5 V, VS = 15.5 V Room -0.25 - 0.25
Source Off Leakage Current IS(off)
V+ = 16.5 V, V- = -16.5 V Hot -20 - 20
nA
VD = ± 15.5 V, VS(open) = ± 15.5 V Room -0.75 - 0.75
Channel On Leakage Current ID(on)
V+ = 16.5 V, V- = -16.5 V Hot -60 - 60
Digital Control
Input Voltage High VINH Full 2.4 - -
V
Input Voltage Low VINL Full - - 0.8
Input Current IINL or IINH VINH or VINL Full -1 - 1 μA
Dynamic Characteristics
Turn-On Time tON Room - - 175
See switching time test circuit see figure 2
Turn-Off Time tOFF Room - - 145 ns
Break-Before-Make Time Delay tD See figure 3 Room 5 - -
Charge Injection d Q CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω Room - - 10 pC
Off-Isolation OIRR RL = 75 Ω, CL = 5 pF Room - 72 -
dB
Channel-to-Channel Crosstalk XTALK VD = 2.3 VRMS, f = 1 MHz Room - 80 -
Off Capacitance COFF Room - 8 -
f = 1 MHz, VS = 0 V pF
Channel On Capacitance CON Room - 12 -
Power Supplies
Positive Supply Current I+ Room - - 200
DG333A: VIN = 0 V or 5 V
Negative Supply Current I- Room -1 - -
Positive Supply Current I+ Room - - 1 μA
Logic Supply Current IL DG333AL: VIN = 0 V or 5 V, VL = 5 V Room - - 1
Negative Supply Current I- Room -1 - -
Supply Voltage Range V+/V- Full ±4 - ± 22 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
40 40
7.5 V
35 35
125 °C
R(DS)on - On-Resistance (Ω)
R DS(on) - On-Resistance ()
30 30
10 V 85 °C
25 25 70 °C
15 V 25 °C
20 20
0 °C
20 V
15 15 - 40 °C
- 55 °C
10 10
- 20 - 15 - 10 -5 0 5 10 15 20 - 15 - 10 -5 0 5 10 15
VD - Drain Voltage (V) VD - Drain Voltage (V)
RDS(on) vs. VD (Dual Supply) RDS(on) vs. VD and Temperature (Dual Supply)
180 75
150
63
RDS(on) vs. VD (Single Supply) RDS(on) vs. VD and Temperature (Single Supply)
30 40
V+ = 15 V
V- = - 15 V 30
20
20
10 ID(off), IS(off)
10
Q (pC)
I (pA)
0
0
ID(on)
- 10
- 10
- 20 - 20
- 30 - 30
- 15 - 10 -5 0 5 10 15 - 15 - 10 -5 0 5 10 15
VD or VS - Drain or Source Voltage (V) VS - Source Voltage (V)
3.0 120
2.8 V+ = 15 V, V- = - 15 V
VIN = 3 V Pulse tON
2.6
100
2.4
VT - Switching Threshold (V)
2.2
2.0 80
VIH
t ON , t OFF (ns)
1.8
1.6 tOFF
60
1.4
1.2
1.0 VIL
40
0.8
0.6
20
0.4
0.2
0.0 0
5 10 15 20 25 30 35 40 - 55 - 40 - 20 0 20 40 60 80 100 120
V+ - Supply Voltage (V)
Temperature (°C)
Input Switching Threshold vs. Supply Voltage Switching Time vs. Temperature
140 80
120 Source 2
70
100 tON
V- = 0 V
60
60
40
50
V+ = 15 V
V- = - 15 V tOFF
20
0 40
100 1K 10K 100K 1M 10M 100M ± 10 ± 11 ± 12 ± 13 ± 14 ± 15 ± 16
f - Frequency (Hz) Supply Voltage (V)
Crosstalk and Off Isolation vs. Frequency Switching Time vs. Supply Voltages
130 10 mA
V+ = 15 V, V- = - 15 V
120
VIN = 5 V, 50 % D-Cycle
110 1 mA
100
tON
t ON , t OFF (ns)
90 V- = 0 V 100 µA
I SUPPLY
VIN = 3 V I+, I-
80
70 10 µA
IL
60
50 1 µA
tOFF
40
100 nA
30
10 11 12 13 14 15 16 100 1K 10K 100K 1M 10M
V+ Supply Voltage (V) f - Frequency (Hz)
1 µA
V+ = 16.5 V, V- = - 16.5 V
100 nA VIN = 0 V
10 nA I+, I-
1 nA
I SUPPLY
100 pA
IGND
10 pA
1 pA
0.1 pA
- 55 - 40 - 20 0 20 40 60 80 100 120
Temperature (°C)
tr < 20 ns
+ 15 V tf < 20 ns
3V
VIN 50 %
V+ 0V
S1 tON
+ 10 V tOFF
D1
VO tOPEN
S2 + 10 V
- 10 V
RL 50 %
CL
IN1 300 Ω 35 pF VO 0V
50 %
3V - 10 V
GND V-
tOFF
tON tOPEN
- 15 V
+ 15 V
Logic 3V
Input 50 %
V+
0V
S1 VD
VO1
D 90 %
10 V VO2
S2 VO1
0V
IN VD
RL1 CL1 90 %
VO2
GND V-
RL2 CL2 0V
tD tD
- 15 V
RL = 300 Ω, CL = 35 pF
CL (includes fixture and stray capacitance)
Fig. 3 - Break-Before-Make
+ 15 V
V+
D
0 V, 2.4 V
IN
RL VS
100 Ω GND V- C Off Isolation = 20 log V
D
Analyzer
CH A C = RF Bypass
CH B
- 15 V
+ 15 V
V+
D1 S1 50
S8 D4
RL
100 GND V- C
Analyzer
CH A
CH B
- 15 V
Fig. 5 - Crosstalk
+ 15 V
V+
Meter
IN HP4192A
Impedance
0 V, 2.4 V Analyzer
S or Equivalent
GND V- f = 1 MHz
C
- 15 V
Fig. 6 - Capacitances
+ 15 V
V+ Δ VO
Rg
D S VO
VO
Vg IN CL IN
3V 10 nF On On
Off
GND V-
Q = Δ VO x CL
- 15 V
Fig. 7 - Charge Injection
+ 15 V
V+
S1
D1
S2
IN1
S8
ein D4
S7
IN4
Clock 1/
2 DG333A/333AL
GND V-
- 15 V
+
eout
-
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70803.
PDIP: 20ĆLEAD
20 19 18 17 16 15 14 13 12 11
E1 E
1 2 3 4 5 6 7 8 9 10
D
S
Q1
A A
A1 L
15°
C MAX
B1 e1 B eA
MILLIMETERS INCHES
Dim Min Max Min Max
A 3.81 5.08 0.150 0.200
A1 0.38 1.27 0.015 0.050
B 0.38 0.51 0.015 0.020
B1 0.89 1.65 0.035 0.065
C 0.20 0.30 0.008 0.012
D 24.89 26.92 0.980 1.060
E 7.62 8.26 0.300 0.325
E1 5.59 7.11 0.220 0.280
e1 2.29 2.79 0.090 0.110
eA 7.37 7.87 0.290 0.310
L 3.175 3.81 0.123 0.150
Q1 1.27 2.03 0.050 0.080
S 1.02 2.03 0.040 0.080
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5484
0.010
20 19 18 17 16 15 14 13 12 11 R0.008
0.1475$0.001
R0.009
0.295$0.001
0.070$0.005
R0.004
4°$2°
1 2 3 4 5 6 7 8 9 10
0.032$0.005
DETAIL A
0.055$0.005
PIN 1 INDICATOR
Ğ0.0470.007$0.001 dp
SURFACE POLISHED
0.334$0.005
0.291$0.001
0.02045°
7°(4)
0.091$0.001 0.504$0.001
0.098$0.002
R0.004 0.295$0.001
0.406$0.004
0.041$0.001
DETAIL A
0.050 TYP. 0.017$0.0003 0.006$0.002
0.504$0.001
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