DG411, DG412, DG413

Vishay Siliconix

Precision Monolithic Quad SPST CMOS Analog Switches

DESCRIPTION FEATURES
The DG411 series of monolithic quad analog switches was • Halogen-free according to IEC 61249-2-21
Definition
designed to provide high speed, low error switching of
• 44 V supply max. rating
precision analog signals. Combining low power (0.35 µW)
• ± 15 V analog signal range
with high speed (tON: 110 ns), the DG411 family is ideally • On-resistance - RDS(on): 25 
suited for portable and battery powered industrial and military • Fast switching - tON: 110 ns
applications. • Ultra low power - PD: 0.35 µW
To achieve high-voltage ratings and superior switching • TTL, CMOS compatible
performance, the DG411 series was built on Vishay • Single supply capability
Siliconix’s high voltage silicon gate process. An epitaxial • Compliant to RoHS Directive 2002/95/EC
layer prevents latchup.
BENEFITS
Each switch conducts equally well in both directions when
• Widest dynamic range
on, and blocks input voltages up to the supply levels when
• Low signal errors and distortion
off. • Break-bevor-make switching action
The DG411, DG412 respond to opposite control logic as • Simple interfacing
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches. APPLICATIONS
• Precision automatic test equipment
• Precision data acquisition
• Communication systems
• Battery powered systems
• Computer peripherals

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG411 DG411
Dual-In-Line and SOIC LCC
D1 IN1 NC IN2 D2
IN1 1 16 IN2 Key
3 2 1 20 19
D1 2 15 D2
S1 4 18 S2
S1 3 14 S2
5 17
V- 4 13 V+
V- V+ TRUTH TABLE
6 16
NC NC Logic DG411 DG412
GND 5 12 VL
GND
7 15 VL 0 ON OFF
S4 6 11 S3
8 14 1 OFF ON
D4 S4 S3
7 10 D3
Logic “0” 0.8 V
IN4 8 9 IN3 9 10 11 12 13 Logic “1” 2.4 V
D4 IN4 NC IN3 D3
Top V iew Top View

DG413 DG413
Dual-In-Line and SOIC LCC
D1 IN1 NC IN2 D2
Key
IN1 1 16 IN2 3 2 1 20 19

D1 2 15 D2 4 18
S1 S2 TRUTH TABLE
S1 3 14 S2 5 17
V- V+ Logic SW1, SW4 SW2, SW3
V- 4 13 V+
NC 6 16 NC 0 OFF ON
GND 5 12 VL 7 1 ON OFF
GND 15 VL
S4 6 11 S3
8 14 Logic “0” 0.8 V
S4 S3
D4 7 10 D3 Logic “1” 2.4 V
9 10 11 12 13
IN4 8 9 IN3
D4 IN4 NC IN3 D3
Top V iew Top View

Document Number: 70050 www.vishay.com

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DG411, DG412, DG413
Vishay Siliconix

ORDERING INFORMATION
Temp. Range Package Part Number
DG411DJ
DG411DJ-E3
DG412DJ
16-pin plastic DIP
DG412DJ-E3
DG413DJ
DG413DJ-E3
DG411DY
DG411DY-E3
DG411DY-T1
DG411DY-T1-E3
DG412DY
DG412DY-E3
- 40 °C to 85 °C 16-pin narrow SOIC
DG412DY-T1
DG412DY-T1-E3
DG413DY
DG413DY-E3
DG413DY-T1
DG413DY-T1-E3
DG411DQ-E3
DG411DQ-T1-E3
DG412DQ-E3
16-pin TSSOP
DG412DQ-T1-E3
DG413DQ-E3
DG413DQ-T1-E3

ABSOLUTE MAXIMUM RATINGS

Parameter Limit Unit
V + to V - 44
GND to V - 25
VL (GND - 0.3) to (V+) + 0.3 V
(V-) -2 to (V+) + 2
Digital Inputsa, VS, VD
or 30 mA, whichever occurs first
Continuous Current (Any terminal) 30
mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle) 100
(AK, AZ suffix) - 65 to 150
Storage Temperature °C
(DJ, DY suffix) - 65 to 125
16-pin plastic DIPc 470
16-pin narrow SOICd 600
Power Dissipation (Package)b mW
16-pin CerDIPe 900
e
LCC-20 900
Notes:
a. Signals on SX, DX, or INX exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.

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 DG411, DG412, DG413
Vishay Siliconix

SPECIFICATIONSa
Test Conditions A Suffix D Suffix
Unless Specified - 55 °C to 125 °C - 40 °C to 85 °C
V + = 15 V, V - = - 15 V
Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b Typ.c Min.d Max.d Min.d Max.d Unit
Analog Switch
Analog Signal Rangee VANALOG Full - 15 15 - 15 15 V
Drain-Source V + = 13.5 V, V - = - 13.5 V Room 25 35 35
RDS(on) 
On-Resistance IS = - 10 mA, VD = ± 8.5 V Full 45 45
Room ± 0.1 - 0.25 0.25 - 0.25 0.25
IS(off)
Switch Off Leakage V + = 16.5, V - = - 16.5 V Full - 20 20 -5 5
Current VD = ± 15.5 V, VS = ± 15.5 V Room ± 0.1 - 0.25 0.25 - 0.25 0.25
ID(off) nA
Full - 20 20 -5 5
Channel On Leakage V + = 16.5 V, V - = - 16.5 V Room ± 0.1 - 0.4 0.4 - 0.4 0.4
ID(on)
Current VS = VD = ± 15.5 V Full - 40 40 - 10 10
Digital Control
Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5
µA
Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5
Dynamic Characteristics
Room 110 175 175
Turn-On Time tON
RL = 300 , CL = 35 pF Full 240 220
VS = ± 10 V, see figure 2 Room 100 145 145
Turn-Off Time tOFF ns
Full 160 160
Break-Before-Make DG413 only, VS = 10 V
tD Room 25
Time Delay RL = 300 , CL = 35 pF
Vg = 0 V, Rg = 0 
Charge Injection Q Room 5 pC
CL = 10 nF
e OIRR Room 68
Off Isolation
RL = 50 CL = 5 pF,
Channel-to-Channel dB
XTALK f = 1 MHz Room 85
Crosstalke
Source Off Capacitancee CS(off) Room 9
Drain Off Capacitancee CD(off)
f = 1 MHz
Room 9
pF
Channel On
CD(on) Room 35
Capacitancee
Power Supplies
Room 0.0001 1 1
Positive Supply Current I+
Full 5 5
Room - 0.0001 -1 -1
Negative Supply Current I-
V + = 16.5 V, V - = - 16.5 V Full -5 -5
µA
VIN = 0 V or 5 V Room 0.0001 1 1
Logic Supply Current IL
Full 5 5
Room - 0.0001 -1 -1
Ground Current IGND
Full -5 -5

Document Number: 70050 www.vishay.com

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DG411, DG412, DG413
Vishay Siliconix

SPECIFICATIONSa (for Unipolar Supplies)

Test Conditions A Suffix D Suffix
Unless Specified - 55 °C to 125 °C - 40 °C to 85 °C
Parameter Symbol Temp.b Typ.c Unit
V + = 12 V, V - = 0 V
Min.d Max.d Min.d Max.d
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Analog Switch
Analog Signal Rangee VANALOG Full 12 12 V
Drain-Source V + = 10.8 V, Room 40 80 80
RDS(on) 
On-Resistance IS = - 10 mA, VD = 3 V, 8 V Full 100 100
Dynamic Characteristics
Room 175 250 250
Turn-On Time tON
RL = 300 , CL = 35 pF Hot 400 315
VS = 8 V, see figure 2 Room 95 125 125
Turn-Off Time tOFF ns
Hot 140 140
Break-Before-Make DG413 only, VS = 8 V
tD Room 25
Time Delay RL = 300 , CL = 35 pF
Charge Injection Q Vg = 6 V, Rg = 0 , CL = 10 nF Room 25 pC
Power Supplies
Room 0.0001 1 1
Positive Supply Current I+
Hot 5 5
Room - 0.0001 -1 -1
Negative Supply Current I-
Hot -5 -5
V + = 13.5 V, VIN = 0 V or 5 V µA
Room 0.0001 1 1
Logic Supply Current IL
Hot 5 5
Room - 0.0001 -1
Ground Current IGND -5
Hot -5
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

50 300
R DS(on) - Drain-Source On-Resistance (Ω)

45 TA = 25 °C ±5V VL = 5 V
250
40 V+ = 3 V
VL = 3 V
35
200
±8V
30
± 10 V
25 150
± 15 V ± 12 V
V+ = 5 V
V

20
100
15
± 20 V 8V
10 12 V
50 15 V
20 V
5

0 0
- 20 - 15 - 10 -5 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20
VD - Drain V oltage (V) VD - Drain Voltage (V)
On-Resistance vs. VD and Power Supply Voltage On-Resistance vs. VD and Unipolar Supply Voltage

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 DG411, DG412, DG413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

40 35
30 V+ = 15 V

R DS(on) - Drain-Source On-Resistance ()

V+ = 15 V V- = - 15 V
V- = - 15 V 30 VL = 5 V
20
VL = 5 V
TA = 25 °C ID(off) 125 °C
10
25
0 85 °C
I S, I D (pA)

IS(off)
- 10 20
- 20 ID(on) 25 °C

15
- 30
- 55 °C
- 40
10
- 50

- 60 5
- 15 - 10 -5 0 5 10 15 - 15 - 10 -5 0 5 10 15
VD or V S - Drain or Source Voltage (V) VD - Drain Voltage (V)

Leakage Current vs. Analog Voltage ID, IS Leakages vs. Temperature

100 140
V+ = 15 V 120 V+ = 15 V
80 V- = - 15 V V- = - 15 V CL = 10 nF
VL = 5 V 100 VL = 5 V
60
80
40 60
CL = 1 nF
Q (pC)

Q (pC)

CL = 10 nF
20 40

20
0
CL = 1 nF 0
- 20
- 20
- 40 - 40

- 60 - 60
- 15 - 10 -5 0 5 10 15 - 15 - 10 -5 0 5 10 15
VS - Source Voltage (V) VD - Drain Voltage (V)
Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage

3.5 240

210 V+ = 15 V
3.0 V- = - 15 V
VL = 5 V
180 VS = 10 V
2.5
VL = 7.5 V
150
t ON , t OFF (ns)

2.0
V TH (V)

tON
6.5 V 120
1.5 tOFF
90
1.0 4.5 V 5.5 V
60

0.5
30

0 0
5 10 15 20 25 30 35 40 - 55 - 35 - 15 5 25 45 65 85 105 125
(V+) Temperature (°C)

Input Switching Threshold vs. Supply Voltage Switching Time vs. Temperature

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DG411, DG412, DG413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 mA
V+ = 15 V
V- = - 15 V
10 mA VL = 5 V
= 1 SW
1 mA = 4 SW
I+, I-
100 µA
I SUPPLY
10 µA
IL
1 µA

100 nA

10 nA
10 100 1K 10K 100K 1M 10M
f - Frequency (Hz)

Supply Current vs. Input Switching Frequency

SCHEMATIC DIAGRAM (Typical Channel)

V+

VL
V-
Level
Shift/
VIN
Drive
V+

GND
D

V-
Figure 1.

TEST CIRCUITS

+5V + 15 V Logic 3V tr < 20 ns

Input 50 % tf < 20 ns
0V
VL V+ tON
S D Switch
± 10 V VO Input* VS
VO
90 %
IN
RL CL
300  35 pF 0V
GND V- Switch
Output tON
90 %
VO
- 15 V Switch - VS
Input*
CL (includes fixture and stray capacitance) * V S = 10 V for t ON, V S = - 10 V for tOFF
RL Note: Logic input waveform is inverted for switches that
VO = V S
RL + rDS(on) have the opposite logic sense control

Figure 2. Switching Time

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 DG411, DG412, DG413
Vishay Siliconix
TEST CIRCUITS
+5V + 15 V
Logic 3V
Input 50 %
VL V+
S1 D1 0V
VS1 VO1 VS1
IN1 VO1
90 %
D2 VO2
S2
VS2
Switch 0V
Output
IN2 VS2
RL1 CL1 VO2 90 %
300  35 pF
GND V-
RL2 CL2 Switch 0V
300  35 pF tD tD
Output
- 15 V

CL (includes fixture and stray capacitance)

Figure 3. Break-Before-Make (DG413)

VO

+5V + 15 V
VO

VL V+ INX
Rg OFF ON OFF
S D
VO

Vg IN CL
3V 10 nF
V- OFF ON OFF
GND INX
Q = V O x CL

INX dependent on switch configuration Input polarity determined

- 15 V
by sense of switch.
Figure 4. Charge Injection

+5V + 15 V
C C

VL V+
VS S1 D1

Rg = 50  50 
IN1
0 V, 2.4 V
S2 D2
NC VO

RL
IN2
0 V, 2.4 V

GND V- C

VS
XTA LK Isolation = 20 log
VO - 15 V
C = RF bypass
Figure 5. Crosstalk

Document Number: 70050 www.vishay.com

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DG411, DG412, DG413
Vishay Siliconix

+5V + 15 V
+5V + 15 V
C C
C C
VL V+
VS S D VO VL V+
S
Rg = 50 
RL
IN Meter
50 
0 V, 2.4 V
IN HP4192A
Impedance
GND V- C Analyzer
0 V, 2.4 V
D or Equivalent

- 15 V GND V-
C

VS
Off Isolation = 20 log
VO - 15 V
C = RF Bypass
Figure 6. Off Isolation Figure 7. Source/Drain Capacitances

APPLICATIONS
Single Supply Operation: Summing Amplifier

The DG411, DG412, DG413 can be operated with unipolar When driving a high impedance, high capacitance load such
supplies from 5 V to 44 V. These devices are characterized as shown in figure 8, where the inputs to the summing
and tested for unipolar supply operation at 12 V to facilitate amplifier have some noise filtering, it is necessary to have
the majority of applications. In single supply operation, V+ is shunt switches for rapid discharge of the filter capacitor, thus
tied to VL and V- is tied to 0 V. See Input Switching Threshold preventing offsets from occurring at the output.
vs. Supply Voltage curve for VL versus input threshold
requirments.

R1 R2
VIN 1

C1
R5

R3 R4
VIN 2 -
VOUT
+
C2

R6

DG413

Figure 8. Summing Amplifier

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70050.

www.vishay.com Document Number: 70050

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 Package Information
Vishay Siliconix

SOIC (NARROW): 16ĆLEAD

JEDEC Part Number: MS-012

MILLIMETERS INCHES
Dim Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.38 0.51 0.015 0.020
C 0.18 0.23 0.007 0.009
D 9.80 10.00 0.385 0.393
E 3.80 4.00 0.149 0.157
16 15 14 13 12 11 10 9 e 1.27 BSC 0.050 BSC

E H 5.80 6.20 0.228 0.244

L 0.50 0.93 0.020 0.037
1 2 3 4 5 6 7 8
Ĭ 0_ 8_ 0_ 8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300

D H
C

All Leads
0.101 mm
A1 Ĭ
e B L
0.004 IN

Document Number: 71194 www.vishay.com

02-Jul-01 1
 Package Information
Vishay Siliconix

PDIP: 16ĆLEAD

16 15 14 13 12 11 10 9

E1 E

1 2 3 4 5 6 7 8

D
S
Q1

A1 L

15°
C MAX
B1 e1 B eA

MILLIMETERS INCHES
Dim Min Max Min Max
A 3.81 5.08 0.150 0.200
A1 0.38 1.27 0.015 0.050
B 0.38 0.51 0.015 0.020
B1 0.89 1.65 0.035 0.065
C 0.20 0.30 0.008 0.012
D 18.93 21.33 0.745 0.840
E 7.62 8.26 0.300 0.325
E1 5.59 7.11 0.220 0.280
e1 2.29 2.79 0.090 0.110
eA 7.37 7.87 0.290 0.310
L 2.79 3.81 0.110 0.150
Q1 1.27 2.03 0.050 0.080
S 0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482

Document Number: 71261 www.vishay.com

06-Jul-01 1
 Package Information
Vishay Siliconix

TSSOP: 16-LEAD

DIMENSIONS IN MILLIMETERS
Symbols Min Nom Max
A - 1.10 1.20
A1 0.05 0.10 0.15
A2 - 1.00 1.05
B 0.22 0.28 0.38
C - 0.127 -
D 4.90 5.00 5.10
E 6.10 6.40 6.70
E1 4.30 4.40 4.50
e - 0.65 -
L 0.50 0.60 0.70
L1 0.90 1.00 1.10
y - - 0.10
θ1 0° 3° 6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624

Document Number: 74417 www.vishay.com

23-Oct-06 1
 PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16

0.193
(4.90)

0.055
(1.40)
0.281

0.171
(7.15)

(4.35)
0.014 0.026 0.012
(0.35) (0.65) (0.30)

Recommended Minimum Pads

Dimensions in inches (mm)

Revision: 02-Sep-11 1 Document Number: 63550

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-16

RECOMMENDED MINIMUM PADS FOR SO-16

0.372
(9.449)

0.047
(1.194)
(6.248)

(3.861)
0.246

0.152
0.022 0.050 0.028
(0.559) (1.270) (0.711)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72608

24 Revision: 21-Jan-08
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
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.

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DG413DY DG413DJ DG413DJ-E3 DG413DY-E3 DG412DJ DG412DY DG411DJ DG411DY DG411DY-T1
DG412DY-T1 DG413DY-T1 DG411DY-E3 DG411DJ-E3 DG412DY-E3 DG412DJ-E3 DG411DY-T1-E3 DG412DY-
T1-E3 DG413DY-T1-E3 DG411DQ-T1-E3 DG413DQ-T1-E3 DG412DQ-T1-E3