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65nm CMOS Process Data Sheet

This document provides transistor and interconnect parameters for a 65nm CMOS process for teaching analog IC design. It includes details such as transistor gain factors, threshold voltages, capacitances between layers, sheet and contact resistances, and maximum current densities. Parameters are given for both NMOS and PMOS transistors as well as the multiple metal layers in the 65nm process.
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0% found this document useful (1 vote)
573 views

65nm CMOS Process Data Sheet

This document provides transistor and interconnect parameters for a 65nm CMOS process for teaching analog IC design. It includes details such as transistor gain factors, threshold voltages, capacitances between layers, sheet and contact resistances, and maximum current densities. Parameters are given for both NMOS and PMOS transistors as well as the multiple metal layers in the 65nm process.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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65nm CMOS Process Data Sheet for the Analog IC Design Course

Note: The parameters in this sheet are representative for a 65nm CMOS process, and are intended
for teaching purposes only.

Transistor Parameters
Parameter NMOS PMOS Unit
Gain factor kn = 440 kp = 140 µA/V2
Threshold voltage Vt0n = 0.3 Vt0p = -0.3 V
Body effect factor γn = 0.24 γp = -0.20 √𝑉
Surface potential 2fn = 1.3 2fp = -1.0 V
𝑑𝑋𝑑,𝑛 𝑑𝑋𝑑,𝑝
Channel length modulation | | = 0.2 | | = 0.2 µm/V
𝑑𝑉𝐷𝑆 𝑑𝑉𝐷𝑆
Subthreshold current Itn = 1.7 Itp = -0.45 µA
Subthreshold slope factor nn = 1.7 np = 1.5

Capacitances (layer to substrate)


Area (fF/µm2) Perimeter (fF/µm)
Gate oxide capacitance Cox = 12
Gate-diffusion overlap Col/W = 0.3
N+ diffusion (0V) Cj0n = 1.4 Cjswn = 0.04
P+ diffusion (0V) Cj0p = 1.8 Cjswp = 0.06
Poly Cp = 0.11 Cpp = 0.018
Metal 1 Cm1 = 0.098 Cm1p = 0.018
Metal 2 Cm2 = 0.062 Cm2p = 0.018
Metal 3 Cm3 = 0.033 Cm3p = 0.016
Metal 4 Cm4 = 0.022 Cm4p = 0.015
Metal 5 Cm5 = 0.017 Cm5p = 0.015
Metal 6 Cm6 = 0.014 Cm6p = 0.015
Metal 7 Cm7 = 0.009 Cm7p = 0.016
Metal 8 Cm8 = 0.007 Cm8p = 0.018

Resistances
Sheet resistances (Ω/□) Contact resistances (Ω)
Poly Rsp = 15 Contact Metal1 to below Rct = 38
Metal 1 Rsm1 = 0.13 Via MetalX to X+1, X=1..5 Rvia1-5 = 1.0
Metal2-5 Rsm2-5 = 0.11 Via MetalX to X+1, X=6..7 Rvia6-7 = 0.50
Metal6 Rsm6 = 0.040
Metal7-8 Rsm7-8 = 0.024

Maximum currents
Current densities (mA/µm) Contact currents (mA)
Poly Jp = 1.5 Contact Metal 1 to below Ict = 0.14
Metal1 Jm1 = 1.5 Via MetalX to X+1, X=1..4 Ivia1-4 = 0.16
Metal2-5 Jm2-5 = 1.8 Via Metal5 to 6 Ivia5 = 0.80
Metal6 Jm6 = 4.4 Via MetalX to X+1, X=6..7 Ivia6-7 = 3.0
Metal7-8 Jm7-8 = 8.0

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