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    The PN Junction: D DP DN DP N DN N

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    Manmohan Bisht
    The PN junction is formed by joining P-type and N-type semiconductor materials. This creates an electric field across the depletion region that establishes a built-in potential difference. The built-in potential opposes the flow of both holes and electrons across the junction and acts as a potential barrier. A suitable forward bias can provide the necessary energy for charge carriers to overcome this barrier. PN junctions exhibit rectifying current-voltage characteristics and form the basis of diodes and other semiconductor devices.

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    The PN Junction: D DP DN DP N DN N

    Uploaded by

    Manmohan Bisht
    194 views3 pages
    The PN junction is formed by joining P-type and N-type semiconductor materials. This creates an electric field across the depletion region that establishes a built-in potential difference. The built-in potential opposes the flow of both holes and electrons across the junction and acts as a potential barrier. A suitable forward bias can provide the necessary energy for charge carriers to overcome this barrier. PN junctions exhibit rectifying current-voltage characteristics and form the basis of diodes and other semiconductor devices.

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    it provides convinient and basic knowledge about a pn junction diode

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    The PN Junction

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    The PN junction is formed by joining P-type and N-type semiconductor materials. This creates an electric field across the depletion region that establishes a built-in potential difference. The built-in potential opposes the flow of both holes and electrons across the junction and acts as a potential barrier. A suitable forward bias can provide the necessary energy for charge carriers to overcome this barrier. PN junctions exhibit rectifying current-voltage characteristics and form the basis of diodes and other semiconductor devices.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    194 views3 pages

    The PN Junction: D DP DN DP N DN N

    Uploaded by

    Manmohan Bisht
    The PN junction is formed by joining P-type and N-type semiconductor materials. This creates an electric field across the depletion region that establishes a built-in potential difference. The built-in potential opposes the flow of both holes and electrons across the junction and acts as a potential barrier. A suitable forward bias can provide the necessary energy for charge carriers to overcome this barrier. PN junctions exhibit rectifying current-voltage characteristics and form the basis of diodes and other semiconductor devices.

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    © All Rights Reserved
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    Download as docx, pdf, or txt
    of 3

    The PN junction

    The total charge on each side of a PN Junction must be equal and opposite
    to maintain a neutral charge condition around the junction. If the depletion
    layer region has a distance D, it therefore must therefore penetrate into the
    silicon by a distance of Dp for the positive side, and a distance of Dn for the
    negative side giving a relationship between the two of: Dp*NA = Dn*ND in
    order to maintain charge neutrality also called equilibrium.

    PN Junction Distance
    As the N-type material has lost electrons and the P-type has lost holes, the
    N-type material has become positive with respect to the P-type. Then the
    presence of impurity ions on both sides of the junction cause an electric
    field to be established across this region with the N-side at a positive
    voltage relative to the P-side. The problem now is that a free charge
    requires some extra energy to overcome the barrier that now exists for it to
    be able to cross the depletion region junction.
    This electric field created by the diffusion process has created a “built-in
    potential difference” across the junction with an open-circuit (zero bias)
    potential of:

    Where: Eo is the zero bias junction voltage, VT the thermal voltage of 26mV
    at room temperature, ND and NA are the impurity concentrations and ni is
    the intrinsic concentration.
    A suitable positive voltage (forward bias) applied between the two ends of
    the PN junction can supply the free electrons and holes with the extra
    energy. The external voltage required to overcome this potential barrier that
    now exists is very much dependent upon the type of semiconductor
    material used and its actual temperature.
    Typically at room temperature the voltage across the depletion layer for
    silicon is about 0.6 – 0.7 volts and for germanium is about 0.3 – 0.35 volts.
    This potential barrier will always exist even if the device is not connected to
    any external power source, as seen in diodes.
    The significance of this built-in potential across the junction, is that it
    opposes both the flow of holes and electrons across the junction and is why
    it is called the potential barrier. In practice, a PN junction is formed within
    a single crystal of material rather than just simply joining or fusing together
    two separate pieces.
    The result of this process is that the PN junction has rectifying current–
    voltage (IV or I–V) characteristics. Electrical contacts are fused onto either
    side of the semiconductor to enable an electrical connection to be made to
    an external circuit. The resulting electronic device that has been made is
    commonly called a PN junction Diode or simply Signal Diode.
    Then we have seen here that a PN junction can be made by joining or
    diffusing together differently doped semiconductor materials to produce an
    electronic device called a diode which can be used as the basic
    semiconductor structure of rectifiers, all types of transistors, LED’s, solar
    cells, and many more such solid state devices.
    In the next tutorial about the PN junction, we will look at one of the most
    interesting applications of the PN junction is its use in circuits as a diode.
    By adding connections to each end of the P-type and the N-type materials
    we can produce a two terminal device called a PN Junction Diode which
    can be biased by an external voltage to either block or allow the flow of
    current through it.

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