Physical Design
Physical Design
Physical Design
Ans: To start a floor plan first we need inputs like .v, .lib, .lef, .SDC
This is the first major step in getting your layout done. Your floor plan determines your chip quality. At this
step, you define the size of your chip/block, allocates power routing resources, place the hard macros, and reserve
space for standard cells
Ans: NETLIST:
Netlist contains-
LIBRARY file:
Cell functionality
Two types
1. Technology lef
2. Cell/macro lef
1. Technology lef
It contains metal layer and via information like
Metal layer:
• Direction
• Pitch
• Width
• Area
• Spacing table
• Min enclosure area
• Diag spacing
• Diag min edge length
• Resistance
• Capacitance
• Thickness
• Antenna model and antenna area ratio
• DC current density
VIA information:
• Spacing
• Width
• Antenna model
• Antenna area ratio
• DC current Density
2. Cell/Macro lef
• Class
• Origin
• Size
• Symmetry
• Pin:
o Antenna gate area
o Direction
o Usage
o Port
➢ Clock definition
Create clock
Create virtual clock
Create generated clock
Create clock uncertainty
➢ External delays
Input delays
Output delays
➢ DRV’s
Max tran, max cap and max fanout
4.what happens if pins assign to left and right.(if you have IO pins at top and bottom)?
Ans: Actually top level chip will be divided into some blocks, IO pins will be placed according to the
communication between surrounding blocks.
If we assign pins to left and right rather than top and bottom we will face routing issues in further
stages.
Ans: we will see congestion where available tracks are less than required tracks.
We may see congestion because of
• Cell density
• Pin density
• Bad floorplan
we will see horizontal congestion when horizontal tracks are less and similarly for vertical congestion if
vertical tracks are less
prevention techniques:
7. What happens if cell density and pin density is more, how to resolve it?
Ans: if cell density and pin density is more we will see congestion and routing issues.
By placing partial blockage we can avoid cell density and by cell padding we can avoid pin
density.
Ans: if cells are placed close to macros we will see routing issues near macros, to avoid this we are
placing Halo around the macro.
Ans: Power Planning is one of the most important stage in Physical design. Power network is being
synthesized, It is used provide power to macros and standard cells within the given IR-Drop limit. Steady
state IR Drop is caused by the resistance of the metal wires comprising the power distribution network.
By reducing the voltage difference between local power and ground, steady-state IR Drop reduces both
the speed and noise immunity of the local cells and macros.
Power planning management can be divided in two major category first one is core cell power
management and second one I/O cell power management. In core cell power planning power rings are
formed around the core and macro.In IO cell power planning power rings are formed for I/O cells and
trunks are created between core power ring and power pads.
In addition trunks are also created for macros as per the power requirement.
power planning is part of floor plan stage. In power plan, offset value for rings around the core and
vertical and horizontal straps is being define
I/O cell library contains I/O cell and VDD/VSS pad cell libraries. It also contain IP libraries for reusable
IP like RAM, ROM and other pre designed, standard, complex blocks.
10. what happens if IO pins placed at core boundary?
Timing path is defined as the path between start point and end point where start point and end
point is defined as follows:
Start Point:
All input ports or clock pins of a sequential element are considered as valid start point.
End Point:
For STA design is split into different timing path and each timing path delay is calculated based
on gate delays and net delays. In timing path data gets launched and traverses through combinational
elements and stops when it encounter a sequential element. In any timing path, in general (there are
exceptions); delay requirements should be satisfied within a clock cycle.
In a timing path wherein start point is sequential element and end point is sequential element, if
these two sequential elements are triggered by two different clocks(i.e. asynchronous) then a common
least common multiple (LCM) of these two different clock periods should be considered to find the
launch edge and capture edge for setup and hold timing analysis.
Any synchronous design is split into various timing paths and each timing path is verified for its
timing requirements. In general four types of timing paths can be identified in a synchronous design. They
are:
Input to Register
Input to Output
Register to Register
Register to Output
Data path:
The path wherein data traverses is known as data path. Data path is a pure combinational path. It can have
any basic combinational gates or group of gates.
Ans: INPUTS:
NETLIST:
Netlist contains-
LIBRARY file:
Cell functionality
Two types
3. Technology lef
4. Cell/macro lef
3. Technology lef
It contains metal layer and via information like
Metal layer:
• Direction
• Pitch
• Width
• Area
• Spacing table
• Min enclosure area
• Diag spacing
• Diag min edge length
• Resistance
• Capacitance
• Thickness
• Antenna model and antenna area ratio
• DC current density
VIA information:
• Spacing
• Width
• Antenna model
• Antenna area ratio
• DC current Density
4. Cell/Macro lef
• Class
• Origin
• Size
• Symmetry
• Pin:
o Antenna gate area
o Direction
o Usage
o Port
➢ Clock definition
Create clock
Create virtual clock
Create generated clock
Create clock uncertainty
➢ External delays
Input delays
Output delays
➢ DRV’s
Max tran, max cap and max fanout
➢ Timing path exceptions
False path
Multi cycle path
Max delay
Min delay
SANITY CHECKS:
1. Library checks
• Missing cell information
• Missing pin information
• Duplicate cells
2. Design checks
• Inputs with floating pins
• Nets with tri-state drivers
• Nets with multiple drivers
• Combinational loops
• Empty modules
• Assign statements
3. Constraint checks
• All flops are clocked or not
• There should not be unconstraint paths
• Input and output delays
FLOORPLAN:
1. Utilization factor decides the size of the block.
2. Aspect ratio gives shape of the block.
3. After utilization and aspect ratio we go for pin placement.
In pin placement we have to place pins legally
4. Macros should be placed according to guidelines
a.Place macros around chip periphery.
If you don’t have reasonable rationale to place the macro inside the core
area, then place macros around the chip periphery. Placing a macro inside
the core can invite serious consequence during routing due to a lot of detour
routing, because macros are equal to a large obstacle for routing. Another
advantage to placing the hard macros around the core periphery is it's easier
to supply power to them, and reduces the change of IR drop problems to
macros consuming high amounts of power.
b. Consider connections to fixed cells when placing macros.
When you decide macro position, you have to pay attention to connections to
fixed elements such as I/O and perplaced macros. Place macros near their
associate fixed element. Check connections by displaying flight lines in the
GUI.
c. Orient macros to minimize distance between pins.
When you decide the orientation of macros, you also have to take account of
pins positions and their connections.
d. Reserve enough room around macros.
For regular net routing and power grid, you have to reserve enough routing
space around macros. In this case estimating routing resources with
precision is very important. Use the congestion map from trialRoute to identify
hot spots between macros and adjust their placement as needed.
e. Reduce open fields as much as possible.
Except for reserved routing resources, remove dead space to increase the
area for random logic. Choosing different aspect ratio (if that option is
available) can eliminate open fields.
f. Reserve space for power grid.
The number of power routes required can change based on power
consumption. You have to estimate the power consumption and reserve
enough room for the power grid. If you underestimate the space required for
power routing, you can encounter routing problems
5. After macro placement we will place physical cells like endcap and welltap
cells
POWER PLANNING:
Power planning is to supply power to the standard cells and macros.
Power pads
↓
Power rings
↓
Power stripes→ Macros
↓
Follow pins
↓
Standard cells
PLACEMENT:
Two stages- 1. Course placement 2. Detail placement
1. Course placement:
a. First tool will place standard cells based on hierarchy
b. It will do High fanout net synthesis
Adding buffers to the high fanouts
c. Scan chain reordering
In a less complex design, you don’t usually do scan reordering. However,
sometimes it may become difficult to pass scan timing constraints once the
placement is done. The scan flip flop placements may create lengthier routes
if the consecutive flops in scan chain are placed far apart due to a functional
requirement. In this case, the PnR tool can
reconnect the scan chains, to make routing easier. A prerequisite for this
option is a scan DEF for the tool to recognize the chains.
d. Logical optimization
Sizing
VT swapping
Buffering
Logic restructuring
Pin swapping
Cloning
Rebuffering
Trail route
2. Detail placement
a. Area recovery
b. Congestion driven
c. Time driven
PLACEMENT OPTIMIZATION:
In optimization tool will optimize DRV’s and setup timing
Here we will not see hold because clock is ideal.
Checks in placement:
Cells legalization
Utilization
Area
Timing
Congestion
GOALS OF CTS:
INPUTS OF CTS:
1. SDC
2. SPEC FILE
3. PLACEMENT DATABASE
WHAT IS CTS?
WHY CTS?
1. Buffers list
2. Max skew
3. Min and Max Insertion delay
4. Max trans, Cap, Fanout
5. Inverters list
6. Clock tree leaf pin, exclude pin, stop pin
7. Clock name
8. Clock period
clockdesign
optDesign -postCTS
CHECKS IN CTS:
1. Timing numbers
2. Utilization numbers
3. Congestion
4. All cells should legalize
ROUTING:
INPUTS:
CTS database
Captables
GOAL:
We need to interconnect all the nets without leaving shots and Spacing violations.
1. Global Routing
2. Track Assignment
3. Detailed Routing
GLOBALROUTING:
Router breaks the routing portion of the design into rectangles called gcells and
assigns signalnets to gcells.
The global router attempts to find shortest path through gcells but does not make
actual connection or assign nets to specific nets and to specific track within gcell.
TRACKASSIGNMENT:
In this step the nets are properly assigned on tracks.
DETAILED ROUTING:
Nanoroute follows global routing plan and lays down actual wires that connect pins to
their corresponding nets.
It creates shorts and opens or spacing violations rather than leaving unconnected nets.
We can route detailed routing on entire design, a specified area of design on selected
nets.
Router runs SEARCH AND REPAIR ROUTING during detail routing.
It locates shorts and opens and spacing violations so, it reroutes the effected area to
eliminate violations.
CHECKS:
1 .Verify connectivity
2. Verify geometry
3. timing numbers
4. utilization numbers
5. All cells should legalize
6. Congestion
Commands:
Routedesign
optDesign –postRoute
Ans: According to hierarchy communicating macros will be in same color, based on that we can place
macros .
1. If two macros communicating only with each other we can abutment the macros
2. If the macros communicating with other cells(std cells and IO ports) then we must should
provide a proper channel spacing between the macros or else we can see the routing issue
Ans: It depends on which technology you are working on. 45nm & below there are orientation
requirements by foundry. Poly orientation should be same throughout the chip. So Macro poly orientation
should match with the poly orientation of the standard cells.
17. In power planning for rings and stripes which metal layers used and why?
Ans: For rings and stripes we use top metal layers because for top metal layers we have low resistivity.
18. Can we place cells between the space of IO and core boundary?
Ans: No, we cannot place cells between the space of IO and core boundary because in between IO and
core boundary power rings will be placed and we may see routing issues.
19. How did you placed standard cells with command and tool?
Filler Cells:
To fill the empty space and provide connectivity of N-wells and implant layers.
22. Tell about Non Default Rules?
Ans: Double width and double space.
After PNR stage if u will get timing /crosstalk/noise violations which are difficult to fix at ECO
stage we can try this NDR option at routing stage.
USAGE OF NDRs and Example:
When we are routing special nets like clock we would like to provide more width and
more spacing for them. Instead of default of 1unit spacing and 1unit width specified in tech
file;But NDR having double spacing and double width .When clocknet is routed using NDR it has
better Signal integrity, lesser crosstalk,lessernoise,but we cannot increase the spacing and width
because it effects the area of the chip.
Double spacing: It is used to avoid the crosstalk.
Ans: SETUP: Minimum time required for data stability before the clock edge.
HOLD: Minimum time required for data stability after the clock edge.
Ans: Yes, we will check setup in placement stage, where as we won’t bother about hold because clock
is idea in placement stage.
Trial Route performs quick global and detailed routing for estimating routing-related congestion
and capacitance values. It also incorporates any changes made during placement, such as scan reorder.
You can use Trial Route results to estimate and view routing congestion, and to estimate parasitic values
for optimization and timing analysis. When used during prototyping, Trial Route creates actual wires, so
you can get a good representation of RC and coupling for timing optimization at an early stage in the
flow. Trial Route also produces a congestion map you can view to get early feedback on whether the
design is routable. Trial Route results can also be used for pin assignment when you commit partitions.
Detaile route:
Detailed routing is where we specify the exact location of the wires/interconnects in the channels
specified by the global routing. Metal Layer information of the interconnects are also specified here.
• Downsizing
• VT swapping
• Pulling capture clock path
• Pushing launch clock path
• Insert buffer in data path
Ans: It is the range given in SDC file, if transition delay crosses that range we will see tran violations.
Ans: 45nm.
30. What is macro count, standard cell count and how many clocks in your design?
31. Already you placed macros, then you got core size X-10 and Y+10. How you place macros with
command and from tool?
Ans: By command:
placeInst <macro name> {llx lly urx ury}
llx – Lower Left X co-ordinate
lly – Lower Left Y co-ordinate
urx – Upper Right X co-ordinate
ury – Upper Left Y co-ordinate
With Tool:
Go to Floorplan > Resize Floorplan and make the required changes to core and place the macros with the
toolbar.
32. How to fix setup?
Ans: setup techniques:
• Downsizing
• VT swapping
• Pulling launch clock path
• Pushing capture clock path
Types
(1) Rentention cells
(2)clamp cells
Clamp cells:
They are used to clamp the signals to a specified logic state.
Clamp ‘0’ type isolation cell is used to clamp the powered down output signal to the logic value of ‘0’.
The circuit which can be used for this purpose can be something similar to a multiplexer. One input being
the clamp value and other input being the signal to be isolated. Isolation Enable is the one which decides
when to clamp the powered down signal hence it can be the select input to the multiplexer. The final
optimal function which does this clamp ‘0’ type Isolation is an AND gate with active low Isolation Enable.
considering an active high isolation enable, an OR gate can be used as a clamp ‘1’ Isolation cell. When the
Isolation enable is high, the OR gate output is pulled to high irrespective of the other input signal. Again
what makes it different from the normal OR gate is it is supplied with always ON supply or the power
supply of the sink power domain.
Retention cells: In majority of the cases the clamp value of the signal in the power down domain is
determined by its RESET value. But there are some scenarios which warrant the clamp value to be same as
the last logic state of the signal. This can be accomplished by using the retention type Isolation cells. A
latch is required to store the last state value of the signal. Since the last state value can be either zero or
one, the function required to implement the Isolation cell cannot be simplified further as we did for clamp
0 and clamp 1 type.
1.Front end or logic design- Based on specification provided, functionalities are created at RTL
level abstraction to meet all the requirements. Generally Uses Gated logic. It is basically coding
of digital design.
2. Back end or Physical design- After ligic design and front end verification, in order to tape-out,
the RTL abstraction is converted in form of transistors. They need to be optimised for low area,
power and quality. This is physical or say analog design.
35. Setup calculation?
• Clock name
• Clock period
• Max and min delay
• Max skew
• Sink max tran
• Buffer max tran
• Clock buffers and clock inverters information
• Exclude pin
• Through pin
• Information about Metal layers used
• Leaf route type
Where require time= clock period+capture clock path latency – library setup – setup uncertainty
Arrival time= launch clock path latency + clock to Q delay + comb delay
Where require time= capture clock path latency+library hold +hold uncertainty
Arrival time = launch clock path latency + clock to Q delay + comb delay
Ans: Latch is the generation of a low-impedance path in CMOS chips between the power supply and
the ground rails due to interaction of parasitic pnp and npn bipolar transistors. These BJTs for a
silicon-controlled rectifier with positive feedback and virtually short circuit the power and the
ground rail.
• This causes excessive current flows and potential permanent damage to the devices.
Analysis of the a CMOS Inverter CMOS depicting the parasitic
• The equivalent circuit shown has Q1 being a vertical double emmitter pnp transistor whose base
is formed by the n-well with a high base to collector current gain (β1).
• Q2 is a lateral double emitter npn transistor whose base is formed by the p-type substrate.
• Rwell represents the parasitic resistance in the n-well structure whose value ranges from 1KW to
20kW.
43. What are universal gates and why they are called as universal gates?
Ans: NOR gate and NAND gates have the particular property that any one of them can create
any logical Boolean expression if designed in a proper way.
Ans:
Ans: This type of adder is a little more difficult to implement than a half-adder. The main
difference between a half-adder and a full-adder is that the full-adder has three inputs and two
outputs. The first two inputs are A and B and the third input is an input carry designated as CIN.
When a full adder logic is designed we will be able to string eight of them together to create a
byte-wide adder and cascade the carry bit from one adder to the next.
The output carry is designated as COUT and the normal output is designated as S. Take a look at
the truth-table.
INPUTS OUTPUTS
A B CIN COUT S
0 0 0 0 0
0 0 1 0 1
0 1 0 0 1
0 1 1 1 0
1 0 0 0 1
1 0 1 1 0
1 1 0 1 0
1 1 1 1 1
From the above truth-table, the full adder logic can be implemented. We can see that the output S
is an EXOR between the input A and the half-adder SUM output with B and CIN inputs. We
must also note that the COUT will only be true if any of the two inputs out of the three are HIGH.
Thus, we can implement a full adder circuit with the help of two half adder circuits. The first will
half adder will be used to add A and B to produce a partial Sum. The second half adder logic can
be used to add CIN to the Sum produced by the first half adder to get the final S output. If any of
the half adder logic produces a carry, there will be an output carry. Thus, COUT will be an OR
function of the half-adder Carry outputs. Take a look at the implementation of the full adder
circuit shown below.
Uses of full adder:
Full adder reduces circuit complexibility. It can be used to construct a ripple carry counter to add
an n-bit number. Thus it is used in the ALU also. It is used in Processor chip like Snapdragon,
Exynous or Intel pentium for CPU part . Which consists of ALU (Arithmetic Block unit) . This
Block is used to make operations like Add, subtract, Multiply etcA full adder adds binary
numbers and accounts for values carried in as well as out. A one-bit full adder adds three one-bit
numbers, often written as A, B, and Cin; A and B are the operands, and Cin is a bit carried in
from the previous less significant stage.The full adder is usually a component in a cascade of
adders, which add 8, 16, 32, etc. bit binary numbers.
It does not require any feedback. It simply It involves feedback from output to input
outputs the input according to the logic that is stored in the memory for the next
designed. operation.
Used mainly for Arithmetic and Boolean Used for storing data (and hence used in
operations. RAM).
Logic gates are the elementary building Flip flops (binary storage device) are the
blocks. elementary building unit.
Independent of clock and hence does not Clocked (Triggered for operation with
require triggering to operate. electronic pulses).
Ans: The main advantage of CMOS over NMOS and BIPOLAR technology is the much smaller power
dissipation. Unlike NMOS or BIPOLAR circuits, a Complementary MOS circuit has almost no static
power dissipation. Power is only dissipated in case the circuit actually switches. This allows integrating
more CMOS gates on an IC than in NMOS or bipolar technology, resulting in much better performance.
Complementary Metal Oxide Semiconductor transistor consists P-channel MOS (PMOS) and N-channel
MOS (NMOS).
NMOS
NMOS is built on a p-type substrate with n-type source and drain diffused on it. In NMOS, the majority
carriers are electrons. When a high voltage is applied to the gate, the NMOS will conduct. Similarly,
when a low voltage is applied to the gate, NMOS will not conduct. NMOS are considered to be faster
than PMOS, since the carriers in NMOS, which are electrons, travel twice as fast as the holes.
PMOS
P- channel MOSFET consists P-type Source and Drain diffused on an N-type substrate. Majority carriers
are holes. When a high voltage is applied to the gate, the PMOS will not conduct. When a low voltage is
applied to the gate, the PMOS will conduct. The PMOS devices are more immune to noise than NMOS
devices.
CMOS Working Principle
In CMOS technology, both N-type and P-type transistors are used to design logic functions. The same
signal which turns ON a transistor of one type is used to turn OFF a transistor of the other type. This
characteristic allows the design of logic devices using only simple switches, without the need for a pull-
up resistor.
In CMOS logic gates a collection of n-type MOSFETs is arranged in a pull-down network between the
output and the low voltage power supply rail (Vss or quite often ground). Instead of the load resistor of
NMOS logic gates, CMOS logic gates have a collection of p-type MOSFETs in a pull-up network
between the output and the higher-voltage rail (often named Vdd).
Thus, if both a p-type and n-type transistor have their gates connected to the same input, the p-type
MOSFET will be ON when the n-type MOSFET is OFF, and vice-versa. The networks are arranged such
that one is ON and the other OFF for any input pattern as shown in the figure below.
CMOS offers relatively high speed, low power dissipation, high noise margins in both states, and will
operate over a wide range of source and input voltages (provided the source voltage is fixed).
Ans: Flip-chip is a method for interconnecting chips to external circuitry with solder bumps that have
been deposited onto the chip pads. The solder bumps are deposited on the chip pads on the top side of the
wafer during the final wafer processing step. In order to mount the chip to external circuitry (e.g., a circuit
board or another chip or wafer), it is flipped over so that its top side faces down, and aligned so that its
pads align with matching pads on the external circuit, and then the solder is flowed to complete the
interconnect. This is in contrast to wire bonding, in which the chip is mounted upright and wires are used
to interconnect the chip pads to external circuitry
52. Why top layers for power, below layers for std. cells and middle layers for clock?
Ans: Top metals layers: The resistivity of top metal layers are less and hence less IR drop is seen in
power distribution network. If power stripes are routed in lower metal layers this will use good amount of
lower routing resources and therefore it can create routing congestion.
Middle metal layers: Middle routing layers such as 4,5 and 6 tend to have the same characteristics so the
clock can be more predictable on those layers .Also ,fewer vias are required to connect to the metal to
clock pin on the flop. It also require to metal layers but they are already reserved for power and GND.
Lower metal layers: Std cell require less power it will be available in lower metal layers. And some std
cell are made up of lower metal layers. So no need to connect vias between std cell pins and metal layers.
Ans: 1.Utilization
2. Timing
3. Congestion
4. Area
Ans: no, because SDC contains clock definitions, delays, DRV’s and exceptional paths so in floorplan we
don’t need all these information.
• Clock name
• Clock period
• Max and min delay
• Max skew
• Sink max tran
• Buffer max tran
• Clock buffers and clock inverters information
• Exclude pin
• Through pin
• Information about Metal layers used
• Leaf route type
56. What is the difference between normal buff & inverter and clock buff & clock inverter?
Ans: compare to normal buffers & inverters clock buffers & inverters have equal rise and fall time.
Ans:
This timing exception is specified by the SDC command “set_multicycle_path”. This lets you specify the
number of clock cycles required for the path.
Let us take the timing path from the previous post setup and hold. Let us say the datapath requires 3 clock
cycles.
The clock diagram is given below. Assume the launch is at edge 1 of CLK.
Once you have this specification, the STA tool takes the clock edge 4 as the capturing edge for FF2. By
default, the hold is always checked one clock edge prior to setup edge. Hence the hold will be checked at
edge 3. If you want the hold check to be done at another edge, say the launch edge itself,
a set_multicycle_path -hold should also be given along with the setup specification. set_multicycle_path 1
-hold -from FF1/CP -to FF2/D will move the hold edge by one clock cycle from the default hold edge. i.e.
to 2. set_multicycle_path 2 -hold will move the hold checking edge 2 cycles from the default hold edge.
i.e. to clock edge 1, which is the default hold edge without any set_multicycle_path specified.
60. Draw a clock waveform. What is the time period of the clock with 500MHZ frequency?
By Chandu:
$sum=$sum+1;
2. What are all the fixing methods for setup and hold violations
A. Setup:
Upsizing the cells
Replace buffer with two inverters
HVT to LVT
If the net delay is more than break the net and insert the buffer
Pin swapping
Pulling the launch and pushing the capture
Cloning
Hold:
3. What is OCV
A. OCV – On Chip Variation
The variations are mainly caused by the three factor. They are
Process variation
Voltage variation
Temperature variation
Process variation: The process of fabrication includes diffusion, drawing out of
metal wires, gate drawing etc. The diffusion density is not uniform throughout
wafer. Also, the width of metal wire is not constant. Let us say, the width is 1um
+- 20 nm. So, the metal delays are bound to be within a range rather than a single
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value. Similarly, diffusion regions for all transistors will not have exactly same
diffusion concentrations. So, all transistors are expected to have somewhat
different characteristics.
Voltage variation: Power is distributed to all transistors on the chip with the help
of a power grid. The power grid has its own resistance and capacitance. So, there
is voltage drop along the power grid. Those transistors situated close to power
source (or those having lesser resistive paths from power source) receive larger
voltage as compared to other transistors. That is why, there is variation seen across
transistors for delay.
Temperature variation: Similarly, all the transistors on the same chip cannot have
same temperature. So, there are variations in characteristics due to variation in
temperatures across the chip.
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While performing the reg2reg timing analysis, AOCV methodology finds the
bounding box containing the sequential, clock buffers between two sequentials
and all the data cells. Now within a unit distance, if the path depth increases, the
AOCV derate decreases due to cancelling of random variations. However, if the
distance increases, AOCV derates increases due to increase in the systematic
variations. These variations are modeled in form of LUT.
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this keeps the run times down to just over what standard STA tools require, far
faster than SSTA. They also claim speedier execution and greater accuracy than
AOCV, and no derating tables are required.
7. If PD team has generated 10 spefs after routing, which spef will you ask for?
A. Worst RC corner spef
8. PD inputs
A.
lib (timing, functionality, power)
Lef (physical info)
V (logical connectivity)
Sdc (clock definitions)
Cpf/upf (consists of power domain info)
Cap table (RC values for every net)
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Hierarchy information,
Modules information,
Io ports,
Instances,
Input and output pins
Cell/Macro lef:
Name,
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Class,
Origin,
Size,
Symmetry
Pins direction, use, antenna gate area
Timing exceptions:
false path,
multicycle path,
max delay,
min delay
case analysis
uncertainity
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Assign statements
Multidriven nets
Floating inputs
Tristate buffers
Constraint checks:
All flops are clocked are not
no unconstrained paths
IO delays
Sanity Checks:
checkNetlist
checkDesign -physicalLibrary
checkDesign –timingLibrary
Floor Planning:
checkPinAssignment
addEndCap –preCap FILL8 –postCap FILL8
addWellTap –cell FILL8 –cellInterval 40
checkDesign –floorplan
Power Planning:
globalNetConnect
addRing
addStripe
sRoute
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Placement:
placeDesign
setPlaceMode
optDesign –preCTS
report_timing
CTS:
createClockTreeSpec
clockDesign
optDesign –postCTS –hold
15. What do you mean by PVT conditions and how cell delays varies with PVT
A. PVT – Process Voltage and Temperature.
Process: You must have heard people talking in terms of process values like 90nm,
65nm, 45nm and other technology nodes. These values are characteristic of any
technology and represent the length between the Source and Drain of a MOS
transistor that you might have studied in your under-grad courses. While
manufacturing any die, it has been seen that the dies that are present at the center
are pretty accurate in their process values. But the ones lying on the periphery tend
to deviate from this process value. The deviation is not big, but can have
significant impact on timing.
Voltage: The voltage that any semiconductor chip works upon is given from
outside. Recall while working on breadboards in your labs, you used to connect a
5V supply to the Vcc pin of your IC. Modern chips work on very less voltage than
that. Typically around 1V-1.2V.
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Temperature: The ambient temperature also impacts the timing. Let's say you are
working on a gadget in Siachen glacier where temperature can drop down to -40
degrees centigrade in winters and you expect your device to be working fine. Or
maybe you are in Sahara desert, where ambient temperature is +50 degrees and
your car engine temperature is +150 degrees and again you expect your chip to
working fine. While designing, therefore, STA engineers need to make sure that
their chip will function correctly in the temperatures between -40 to +150 degrees.
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Required Time (RT) = clk+ capture clklatency -lib setup time –(Uncertainty) +
CRPR
Hold:
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Cross talk delay: When w2 signal is having a transition, this transition time can be
affected by the signal transition at w1. If the transition at w1 is in the same
direction as w2 signal transition, it will make w2 signal transition slower. ie,. the
net delays of the victim net will change with respect to the signal transition in the
aggressor net, this should be taken care in the timing analysis for proper timing
closure. But keep in mind, that the victim net will get affected, only if the
transitions in both the nets happen in the same timing window. Also the delay
change in the victim depends on the type of transition (rise or fall) in the aggressor
net. See the below figures for more understanding.
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28. Draw 2X1 mux using AND OR gates and truth table
A. AND gate:
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OR gate:
31. Write a perl code to copy a one file into another file
A. Open(M1,”file1”);
Open (M2,”>file2”);
@l=<M1>;
Print M2 “@l \n”;
1 //-----------------------------------------------------
2 // Design Name : encoder_using_if
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Inputs:
Lib
RTL
Sdc
36. What is STA
A. STA is a method of validating the timing performance of a design by checking all
possible paths for timing violations under worst case conditions.
37. Create a clock with 10ps period and rise edge 4ps and fall edge 8ps
A. create_clock [get_ports{clk}] –name pclk –period 10 –waveform{4 8}
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In this circuit, clock is absent and hence the state changes can occur
according to delay time of the logic.
Removal:
The removal time is the minimum time after an active clock edge that the
asynchronous pin must remain active before it can be de-asserted
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46. While giving the inputs to the floorplan, which LEF(tech lef or cell lef) we
have to give first
A. First, we give the tech lef. Whenever the tech lef is loaded after all other inputs are
loaded
47. Is .lib is mandatory inut for floorplan, and what information you take from
lib
A. No , .lib is not mandatory for floorplan
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55. Why we are using different metal width for different layers
A. For supply the different currents inside the design. Top metal layers have high
current flow and low metal layers have low current flow
56. What happens if in my design have a same metal width for all 9 layers
A. If the width is high the current flow is high. Due to high current flow standard
cells will damage.
If the width is low then we see more IR drop
58. If top level guys had not mentioned the aspect ratio, then how will you take
the core area
A. (Std.cell area+12%(PD overload)+Analog IP+12%(Analog to digital
space)+Macros+4%)/ Utilization
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214. If macros are placed at the center, what are the problems we get?
A. Congestion, net lengths will be more due to detouring, timing issues, IR drop.
216. To avoid congestion in between macros, what are the cares we take?
A. proper channel spacing should be provided between macro to macro and the halo should be provided around the macro,
there should not be crisscrossing between macro to macro.
218. If we place soft blockage in between the macros it will allow the buffers and inverters, in that, then how will the
power will get to that cells?
A. Stripe should be added to get the power to those cells.
Some certain timing paths are not real (or not possible) in the actual functional operation of the design. Such paths can
be turned off during STA by setting these as false paths. A false path is ignored by the STA for analysis.
223. At the placement stage what are all the different types of congestion you see? And how you overcome that
congestion
in your design?
A. 1. Using hard blockages in case of congestion due to notches.
2. Using partial blockage, in case of high cell density.
3. Using cell padding, in case of congestion due to pin density.
225. At placement stage, if we have the utilization of 95%, can we move forward and why?
A. No, we should not proceed with that utilization. We have to check the reason for the jump in the utilization number.
227. If the design had violated by 500ps of setup then will you move forward and why?
A. No, we have to fix the setup violation. If we proceed at this stage by the next stage the setup will be violated more there
may
not be chance to fix.
Hold: The minimum time the data input must remain stable just after the active edge of the clock.
Hold time = Arrival Time – Required Time
Required time = Capture clock latency – lib setup – setup uncertainity
Arrival time = launch clock latency + C to Q delay + combo delay
234. If launch clock is 20ns and capture clock is 10ns then where do we check the setup and hold? and vice versa?
A.
237. What is antenna violation? On what basis antenna violation will affect the cell.
A. It is also called “Plasma induced gate effect damage”. It will occur at manufacturing stage. It is a gate damage that can
occur due to charge accumulation on metals and discharge to a gate through gate oxide. These are normally expressed
as an allowable ratio of metal area to gate area greater than allowable area.
239. On what tool and technology, you have worked? Have you ever seen PT and calibre tools?
241. What happens if we have setup and hold violations in our design?
A. setup and hold timings are to be met in order to ensure that data launched from one flop is captured properly at
another and in
accordance to the state machine designed. In other words, no timing violations means that the data launched by one
flip-flop at one clock edge is getting captured by another flip-flop at the desired clock edge. If the setup check is
violated, data will not be captured properly at the next clock edge. Similarly, if hold check is violated, data intended to
get captured at the next edge will get captured at the same edge. Moreover, setup/hold violations can lead to data
getting captured within the setup/hold window which can lead to metastability of the capturing flip-flop. So, it is very
important to have setup and hold requirements met for all the registers in the design and there should not be any
setup/hold violations.
242. What will you do if your design has setup violation and how will you meet setup in such cases where there are
no
margins available?
A. We can meet the setup violations by adding buffers and downsizing the buffers present in the clock path.
247. Both nets are having same drive strength, but voltage is different, capacitance is occurred or not?
A. yes, the capacitance occurs due to different voltage levels.
248. Both nets are having same voltage, but voltage is same, capacitance is occurred or not?
A. No, the capacitance does not occur because the voltage levels are same.
Ans: It is a method of validating the timing performance of the design by checking all
possible paths for timing violations under worstcase conditions.
Read lib
Read netlist
(Link the design and check any unresolved references and black box)
Read SDC
(check_timing(we should not get any unconstrained end points; clock
notfound; No drive Assertion))
Read spef
(report_annotated parasitics)
Report timing
(we need to generate timing reports for all variable paths in the design)
Analysis
(After generating the reports we should analyse all the slack, setup, hold
values)
Ans: The time taken by the data to be stable before the clock edge called Setup.
Ans: The time taken by the data to be stable before the clock edge called hold.
Ans:
FloorPlan:
Ans: 1. clockDesign
2. optdesign-postCTS
3. report_timing
5. Logical Restructuring.
6. Pin Swapping.
7.Cloning.
To fix HOLD:
Ans: : OCV:
Minor changes in delays due to the variations in PVT conditions.As cell delays
are varying we will apply a global derating factor then every cell having min and max delay.
All the cells are applying with same derating factor.
AOCV:
Ans: A duty cycle is the fraction of one period in which a signal or system is active known as
Duty cycle.
Ans:
I
Because of Drain current i.e., d is inversely proportional to Vth if vth increases Id
decreases then process is slow then delay also increases.
283. Draw a clock waveform. What is the time period of a clock with 1GHZ frequency?
Ans:
Ans: Logical connectivity information between combinational and sequential cells known as
Netlist. It contains 1. Module information
2. Hierarichal information
4. port information
5. Instance and net names
Ans: It contains
1. Power Information
2. Timing Information
3. cell Functionality
4. PVT
Ans:
Ans: SETUP:
R.T – A.T
R.T = Clkperiod+Capture clock latency-lib.setup time-uncertainity
HOLD:
A.T - R.T
291. If setup checks and hold checks not done what happened? If it necessary why?
A NMOS transistor is made up of n-type source and drain and a p-type substrate.
When a voltage is applied to the gate, holes in the body (p-type substrate) are driven away
from the gate. This allows forming an n-type channel between the source and the drain and a
current is carried by electrons from source to the drain through an induced n-type channel.
A PMOS transistor is made up of p-type source and drain and a n-type substrate.
When a positive voltage is applied between the source and the gate (negative voltage between
gate and source) a p-type channel is formed between the source and the drain with opposite
polarities. A current is carried by holes from source to the drain through an induced p-type
channel. A high voltage on the gate will cause a PMOS not to conduct, while a low voltage
on the gate will cause it to conduct .
Ans:
By interchanging the positions of the NMOS and PMOS transistors in the NOT circuit can
give a Buffer and this technique uses only two transistors.
(OR)
A BUF gate is essentially constructed from two NOT gates connected in series
NAND: AB Bar
NOT : A Bar
1. Metal shorts:
Metal Jogging (or) change the metal layers.
2. Via shorts:
Changes the vias.
LEC Flow :
Read lib
Comparing
Ans: Available tracks are less than Required tracks known as Congestion.
• The congestion which is occurring at every g-cell in the design is called global
congestion
• Due to this global congestion we are facing the improper routing (it will generate
opens)
• This is mainly occurred due to improper placement of macros and bad floor plan
To reduce the global congestion change the core size(increase area) and fixing the proper
placement area for std cells.
Ans: The voltage transition from one net to another net through coupling capacitor known as
Crosstalk.
1. Crosstalk Noise
2. Crosstalk Delay
Crosstalk Noise:
If aggressor switches victim is constant known as Crosstalk noise.
Crosstalk Delay:
Ans:
A coupling capacitor is a capacitor which is used to couple or link together only the AC
signal from one circuit element to another. The capacitor blocks the DC signal from entering
the second element and, thus, only passes the AC signal.
306. Capacitance Formula? Explain in detail?
Ans: It is a passive element that has ability to store the charge in the form of potential
difference between plates known as capacitor.
/
C= permitivitty of dielectric* Area of plate overlap in sq.mt Distance between 2
plates
1. CASTING
Depending on the metal and its purpose, the metal may simply be melted down and molded to
shape. This process is known as casting. Casting is best for small or intricate parts. Casting
SHOULD NOT be used for products that require high strength, high ductility, or tight
tolerances.
Dies, jewelery, plaques, and machine components all benefit from this simple production process.
2. POWDER PROCESSING
Powder processing treats powdered metals with pressure (pressing) and heat (sintering) to form
different shapes. Powdered metallurgy is known for its precision and output quality -- it keeps tight
tolerances and often requires no secondary fabrications.
However, it's incredibly costly and generally only used for small, complex parts. Powder
processing is NOT appropriate for high-strength applications.
3. FORMING
Metal forming takes a raw metal (usually in sheet metal form) and mechanically manipulates it into a
desired shape. Unlike casting, metal forming allows for higher strength, ductility, and
workability for additional fabrications.
1. DEFORMATION
2. MACHINING
Machining refers to any fabrication method that removes a section of the metal. Machining is also
known as material removal processing. Cutting, shearing, punching, and stamping are all
common types of machining fabrication.
When planning for machining in your supply chain, hardening processes should happen AFTER
machining processes. Hardened metals have a high shear strength and are more difficult to cut.
3. JOINING
Joining, or assembly, is one of the last steps of the metal manufacturing process. This category
includes welding, brazing, bolting, and adhesives. Assembly can be done by machine or by hand.
4. FINISHING
Depending on your material and application, you may also need finishing services. Finishing includes
everything from galvanization to powder coating, and can take place throughout the manufacturing
process.