Power MOSFET Basics Understanding Superjunction Technology: Mosfets
Power MOSFET Basics Understanding Superjunction Technology: Mosfets
Power MOSFET Basics Understanding Superjunction Technology: Mosfets
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Convenonal planar MOSFETs have higher conventional planar MOSFETs can be three to five times
A1 RDS(on) due to thicker and more lightly doped higher, again depending on the voltage rating. For example,
epitaxial region
while the lowest RDS(on) achievable for a 600 V device in the
A3
TO-220 package is 275 mΩ, superjunction devices from
Epitaxial thickness -> Vishay are available down to 50 mΩ in the same package.
Convenonal Planar MOSFET
Of course with every new generation of design platforms,
better devices with lower RDS(on) will be available in the
SOURCE
DRAIN
DRAIN
Table 2 shows another comparison, this time for 500 V the same RDS(on) but better specifications on every
devices. The SiHG32N50D is a planar MOSFET with a parameter except UIS ruggedness. It should be noted
125 mΩ typical RDS(on) rating. The die is large, in fact the that Vishay is quite conservative in derating the inductive
largest die that can fit into a TO-247 package. This can be switching specifications. A 100 % derating factor is applied
compared with the superjunction SiHA25N50E in the on the measured failure current, which translates to a
smaller, isolated thin lead TO-220F package, which offers derating factor of four for UIS energy Eas.
9.0
8.0
7.0
1000
6.0
Coss (pF)
Eoss (uJ)
Eoss 5.0
4.0
100
3.0
Coss
2.0
1.0
10 0.0
0 100 200 300 400 500 600
VDS
Fig. 6 - Gate Charge Curve vs. VDS for SiHP15N60E Fig. 7 - Capacitance and Stored Energy vs. VDS for SiHP15N60E
conditions. Recognizing the importance, Vishay has to pay greater attention to their system design, particularly
started providing complete Eoss curves for all high-voltage towards reducing PCB parasitics. Superjunction MOSFETs
MOSFETs, all the way up to rated voltage as shown in Fig. 7. have much lower gate charges and can be driven with
low-current gate drivers. Their output capacitances, while
Body Diode Characteristics
highly non-linear, offer lower stored energy Eoss and related
Because of their combination of lower RDS(on) and low output losses. Vishay superjunction devices are available in
capacitances, superjunction MOSFETs are also the devices different packages, voltage ratings, and body diode
of choice for all high-frequency switching applications, characteristics to suit a wide variety of applications.
including ZVS bridges. In a ZVS or synchronous application,
the body diode of the MOSFET is not subject to hard
commutation. The diode current is softly commutated to the
MOSFET channel and the diode recovers voltage blocking
capability when the MOSFET is turned off. However, this
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