BYV255V: High Efficiency Fast Recovery Rectifier Diodes
BYV255V: High Efficiency Fast Recovery Rectifier Diodes
BYV255V: High Efficiency Fast Recovery Rectifier Diodes
DESCRIPTION
Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in ISOTOPTM this device is intended for
use in low voltage, high frequency inverters, free ISOTOP
wheeling and polarity protection applications. (Plastic)
IFSM Surge non repetitive forward current tp=10ms Per diode 1600 A
sinusoidal
Tstg Storage and junction temperature range - 40 to + °C
Tj 150 °C
- 40 to + 150
Total 0.25
Rth (c) Coupling 0.1 °C/W
Tj = 100°C 10 mA
RECOVERY CHARACTERISTICS
IF = 1A dIF/dt = -50A/µs 80
VR = 30V
tfr Tj = 25°C IF = 1A tr = 5 ns 10 ns
VFR = 1.1 x VF
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BYV255V
Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor.
average forward current.
P F(av)(W) IM(A)
120 500
110 =0.5 =1 450 P=40W T
100 400
90 IM
=0.2 350
80
300 P=70W =tp/T
70 =0.1
tp
60 =0.05 250
50 T 200 P=100W
40 150
30
100 P=20W
20
10 I F(av)(A) 50
=tp/T tp
0 0
0 20 40 60 80 100 120 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig.3 : Forward voltage drop versus forward Fig.4 : Relative variation of thermal impedance
current (maximum values). junction to case versus pulse duration.
K
VFM(V) 1.0
1.8 Zth(j-c) (tp. )
K =
Rth(j-c)
1.6
Tj=125 oC
1.4 =0 . 5
0.5
1.2 =0 . 2
1.0
=0 . 1
0.8
0.6 T
0.2 Single pulse
0.4
0.2 IFM(A)
=t p/T tp
0.0 tp(s)
1 10 100 1000 0.1
1.0E-03 1.0E-02 1.0E-01 1. 0E+0 0
Fig.5 : Non repetitive surge peak forward current Fig.6 : Average current versus ambient
versus overload duration. temperature. (duty cycle : 0.5)
I M(A) IF(av)(A)
1000 120
900
800 100
Rth(j-a)=Rth(j-c)
700 80
600
500 Tc=25 oC 60
=0.5
400 T
40
300 Tc=75 o C
IM
200 20
t Tc=110 o C
100 t(s) =tp/T tp Tamb( o C)
=0.5
0 0
0.001 0.01 0.1 1 0 20 40 60 80 100 120 140 160
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BYV255V
Fig.7 : Junction capacitance versus reverse Fig.8 : Recovery charges versus dIF/dt.
voltage applied (Typical values).
C(pF) QRR(uC)
800 2
F=1Mhz Tj=25 oC 90%CONFIDENCE Tj=100 OC
750 IF=IF(av)
1
700
650 0.5
600
550 0.2
VR(V) dIF/dt(A/us)
500 0.1
1 10 100 200 10 20 50 100 200 500
Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction
temperature.
IRM(A) QRR;IRM[Tj]/QRR;IRM[Tj=100 o C
50 1.50
90%CONFIDENCE TYPICAL VALUE S
IF=IF(av) 1.25
20 Tj=100 OC
1.00
10 IRM
0.75
5 QRR
0.50
2 0.25
dIF/dt(A/us) Tj( o C)
1 0.00
10 20 50 100 200 500 0 25 50 75 100 125 150
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BYV255V
DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
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