BYV255V: High Efficiency Fast Recovery Rectifier Diodes

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 BYV255V

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES


FEATURES

n SUITED FOR SMPS K2 A2

n VERY LOW FORWARD LOSSES


n NEGLIGIBLE SWITCHING LOSSES
n HIGH SURGE CURRENT CAPABILITY K1 A1

n HIGH AVALANCHE ENERGY CAPABILITY


n INSULATED :
Insulating voltage = 2500 VRMS
Capacitance = 55 pF

DESCRIPTION
Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in ISOTOPTM this device is intended for
use in low voltage, high frequency inverters, free ISOTOP
wheeling and polarity protection applications. (Plastic)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit


IF(RMS) RMS forward current Per diode 150 A

IF(AV) Average forward current δ = 0.5 Tc=110°C Per diode 100 A

IFSM Surge non repetitive forward current tp=10ms Per diode 1600 A
sinusoidal
Tstg Storage and junction temperature range - 40 to + °C
Tj 150 °C
- 40 to + 150

Symbol Parameter Value Unit


VRRM Repetitive peak reverse voltage 200 V

ISOTOP is a trademark of STMicroelectronics.

May 2000 - Ed : 2E 1/5


BYV255V
THERMAL RESISTANCE

Symbol Parameter Value Unit


Rth (j-c) Junction to case Per diode 0.4 °C/W

Total 0.25
Rth (c) Coupling 0.1 °C/W

When the diodes 1 and 2 are used simultaneously :


Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

ELECTRICAL CHARACTERISTICS (Per diode)


STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit


IR * Tj = 25°C VR = VRRM 100 µA

Tj = 100°C 10 mA

VF ** Tj = 125°C IF = 100 A 0.85 V

Tj = 125°C IF = 200 A 1.00

Tj = 25°C IF = 200 A 1.15

Pulse test : * tp = 5 ms, duty cycle < 2 %


** tp = 380 µs, duty cycle < 2 %

RECOVERY CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr Tj = 25°C IF = 0.5A Irr = 0.25A 55 ns


IR = 1A

IF = 1A dIF/dt = -50A/µs 80
VR = 30V

tfr Tj = 25°C IF = 1A tr = 5 ns 10 ns
VFR = 1.1 x VF

VFP Tj = 25°C IF = 1A tr = 5 ns 1.5 V

TURN-OFF SWITCHING CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

IRM Tj = 100°C IF = 100A dIF/dt = -200A/µs 16 A


Lp  0.05µH
Vcc  0.6 VRRM dIF/dt = -400A/µs 24

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BYV255V

Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor.
average forward current.

P F(av)(W) IM(A)
120 500
110 =0.5 =1 450 P=40W T
100 400
90 IM
=0.2 350
80
300 P=70W =tp/T
70 =0.1
tp
60 =0.05 250
50 T 200 P=100W
40 150
30
100 P=20W
20
10 I F(av)(A) 50
=tp/T tp
0 0
0 20 40 60 80 100 120 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig.3 : Forward voltage drop versus forward Fig.4 : Relative variation of thermal impedance
current (maximum values). junction to case versus pulse duration.
K
VFM(V) 1.0
1.8 Zth(j-c) (tp. )
K =
Rth(j-c)
1.6
Tj=125 oC
1.4 =0 . 5
0.5
1.2 =0 . 2
1.0
=0 . 1
0.8
0.6 T
0.2 Single pulse
0.4
0.2 IFM(A)
=t p/T tp
0.0 tp(s)
1 10 100 1000 0.1
1.0E-03 1.0E-02 1.0E-01 1. 0E+0 0

Fig.5 : Non repetitive surge peak forward current Fig.6 : Average current versus ambient
versus overload duration. temperature. (duty cycle : 0.5)

I M(A) IF(av)(A)
1000 120
900
800 100
Rth(j-a)=Rth(j-c)
700 80
600
500 Tc=25 oC 60
=0.5
400 T
40
300 Tc=75 o C
IM
200 20
t Tc=110 o C
100 t(s) =tp/T tp Tamb( o C)
=0.5
0 0
0.001 0.01 0.1 1 0 20 40 60 80 100 120 140 160

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BYV255V

Fig.7 : Junction capacitance versus reverse Fig.8 : Recovery charges versus dIF/dt.
voltage applied (Typical values).

C(pF) QRR(uC)
800 2
F=1Mhz Tj=25 oC 90%CONFIDENCE Tj=100 OC
750 IF=IF(av)
1
700

650 0.5

600

550 0.2

VR(V) dIF/dt(A/us)
500 0.1
1 10 100 200 10 20 50 100 200 500

Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction
temperature.

IRM(A) QRR;IRM[Tj]/QRR;IRM[Tj=100 o C
50 1.50
90%CONFIDENCE TYPICAL VALUE S
IF=IF(av) 1.25
20 Tj=100 OC
1.00
10 IRM
0.75
5 QRR
0.50

2 0.25
dIF/dt(A/us) Tj( o C)
1 0.00
10 20 50 100 200 500 0 25 50 75 100 125 150

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BYV255V

PACKAGE MECHANICAL DATA


ISOTOP

DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193

n Marking : Type number


n Cooling method : C
n Weight : 27 g
n Epoxy meets UL94, V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 2000 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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