STTH 8 S 12
STTH 8 S 12
STTH 8 S 12
Description
K
The STTH8S12 is developed using ST’s Turbo 2
1200 V technology. It is well-suited as a boost
diode, especially for use in UPS.
IF(AV) 8A
A
VRRM 1200 V
TO-220AC K trr (typ) 32 ns
VF (typ) 1.75 V
Tj (max) 175 °C
Features
• Ultrafast switching
• Low reverse current
• Low thermal resistance
• Reduces switching and conduction losses
1 Characteristics
Tj = 25 °C 5
IR(1) Reverse leakage current VR = VRRM µA
Tj = 150 °C 20 200
Tj = 25 °C 2.7
VF(2) Forward voltage drop IF = 8 A V
Tj = 150 °C 1.75 2.5
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
IF = 1 A, VR = 30 V,
trr Reverse recovery time Tj = 25 °C 32 45 ns
dIF/dt = 200 A/µs
IRM Reverse recovery current 11 15 A
IF = 8 A, VR = 600 V,
S Softness factor Tj = 125 °C 2
dIF/dt = 200 A/µs
QRR Reverse recovery charge 800 nC
Figure 1. Average forward power dissipation Figure 2. Forward voltage drop versus forward
versus average forward current current (typical values)
PF(AV) (W) IF(A)
30 100.0
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ=1
25
20 10.0
Tj = 150 °C Tj = 25 °C
15
10 1.0
T
5
IF(AV) (A) δ = tp/T VF(V)
tp
0 0.1
0 1 2 3 4 5 6 7 8 9 10 11 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 3. Forward voltage drop versus forward Figure 4. Relative variation of thermal
current (maximum values) impedance, junction to case, versus pulse
duration
IF(A) Zth(j-c)/Rth(j-c)
100.0 1.0
0.9
0.8
0.7
10.0 Tj = 150 °C
0.6
Tj = 25 °C 0.5
0.4
1.0
0.3
Single pulse
0.2
VF(V) 0.1
tP(s)
0.1 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Figure 5. Peak reverse recovery current versus Figure 6. Reverse recovery time versus dIF/dt
dIF/dt (typical values) (typical values)
IRM(A) tRR(ns)
24 600
IF = I F(AV) IF = I F(AV)
VR= 600 V VR= 600 V
20 Tj = 125 °C 500 Tj = 125 °C
16 400
12 300
8 200
4 100
dIF/dt(A/µs) dIF/dt(A/µs)
0 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery charges versus Figure 8. Reverse recovery softness factor
dIF/dt (typical values) versus dIF/dt (typical values)
QRR(nC) SFACTOR
1200 3.5
IF = I F(AV) IF=IF(AV)
VR = 600 V VR=600 V
1000 Tj = 125 °C 3.0 Tj=125 °C
2.5
800
2.0
600
1.5
400
1.0
200 0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0 0.0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500
Figure 9. Relative variations of dynamic Figure 10. Junction capacitance versus reverse
parameters versus junction temperature voltage applied (typical values)
1.4
C(pF)
100
IF = I F(AV) F = 1 MHz
VR = 600 V
1.2 Reference: Tj = 125 °C
VOSC = 30 mVRMS
Tj = 25 °C
SFACTOR
1.0
0.8 IRM
10
0.6
QRR
0.4
0.2
T j(°C) VR (V)
0.0
1
25 50 75 100 125
1 10 100 1000 10000
2 Package information
H2 A
ØI C
L5
L7
L6
L2
F1 L9 D
L4
F
M
E
3 Ordering information
4 Revision history
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