IRFZ48, SiHFZ48

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 60 Available
• Repetitive Avalanche Rated
RDS(on) (Ω) VGS = 10 V 0.018
• Ultra Low On-Resistance RoHS*
COMPLIANT
Qg (Max.) (nC) 110
• Very Low Thermal Resistance
Qgs (nC) 29
• 175 °C Operating Temperature
Qgd (nC) 36 • Fast Switching
Configuration Single • Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
D

TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.

S
The TO-220AB package is universally preferred for all
D commercial-industrial applications at power dissipation
G S
levels to approximately 50 W. The low thermal resistance
N-Channel MOSFET and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRFZ48PbF
Lead (Pb)-free
SiHFZ48-E3
IRFZ48
SnPb
SiHFZ48

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 50
Continuous Drain Currente VGS at 10 V ID
TC = 100 °C 50 A
Pulsed Drain Currenta IDM 290
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energyb EAS 100 mJ
Avalanche Currenta IAR 50 A
Repetitive Avalanche Energya EAR 19 mJ
Maximum Power Dissipation TC = 25 °C PD 190 W
Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature)d for 10 s 300
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω IAS = 72 A (see fig. 12).
c. ISD ≤ 72 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 72 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91294 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 0.80

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 - - ± 100 nA
VDS = 60 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 43 Ab - - 0.018 Ω
Forward Transconductance gfs VDS = 25 V, ID = 43 Ab 27 - - S
Dynamic
Input Capacitance Ciss - 2400 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 1300 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 190 -
Total Gate Charge Qg - - 110
ID = 72 A, VDS = 48 V,
Gate-Source Charge Qgs VGS = 10 V - - 29 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 36
Turn-On Delay Time td(on) - 8.1 -
Rise Time tr - 250 -
VDD = 30 V, ID = 72 A, ns
Turn-Off Delay Time td(off) Rg = 9.1 Ω, RD = 0.34 Ω, see fig. 10b - 210 -
Fall Time tf - 250 -

Internal Drain Inductance LD Between lead, D

- 4.5 -
6 mm (0.25") from
package and center of nH
G

Internal Source Inductance LS die contact - 7.5 -

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D - - 50c

showing the
integral reverse A
G

Pulsed Diode Forward Currenta ISM p - n junction diode S

- - 290

Body Diode Voltage VSD TJ = 25 °C, IS = 72 A, VGS = 0 Vb - - 2.0 V

Body Diode Reverse Recovery Time trr - 120 180 ns
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb
Body Diode Reverse Recovery Charge Qrr - 0.50 0.80 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package, (die current = 72 A).

www.vishay.com Document Number: 91294

2 S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRFZ48, SiHFZ48
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91294 www.vishay.com

S11-0518-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91294

4 S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRFZ48, SiHFZ48
Vishay Siliconix

RD
VDS

VGS
D.U.T.
RG
+
- VDD

10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS
90 %

10 %
VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91294 www.vishay.com

S11-0518-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix

L
VDS VDS
Vary tp to obtain
required IAS tp
VDD
RG D.U.T. +
V DD
-
I AS VDS

10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

50 kΩ
QG
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91294

6 S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRFZ48, SiHFZ48
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91294.

Document Number: 91294 www.vishay.com

S11-0518-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A MILLIMETERS INCHES
E DIM.
MIN. MAX. MIN. MAX.
F
A 4.24 4.65 0.167 0.183
ØP b 0.69 1.02 0.027 0.040
Q

b(1) 1.14 1.78 0.045 0.070

H(1)

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
1 2 3
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1)

L(1) 3.33 4.04 0.131 0.159

M* ØP 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
L

DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

C
b
e
J(1)
e(1)

Package Picture
ASE Xi’an

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Legal Disclaimer Notice
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Disclaimer

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Revision: 08-Feb-17 1 Document Number: 91000