IRF9540, SiHF9540

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) - 100 Available
• Repetitive Avalanche Rated
RDS(on) () VGS = - 10 V 0.20 RoHS*
• P-Channel
Qg (Max.) (nC) 61 COMPLIANT
• 175 °C Operating Temperature
Qgs (nC) 14
• Fast Switching
Qgd (nC) 29
• Ease of Paralleling
Configuration Single
• Simple Drive Requirements
S
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
DESCRIPTION
G Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S The TO-220AB package is universally preferred for all
D
G D commercial-industrial applications at power dissipation
P-Channel MOSFET levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF9540PbF
Lead (Pb)-free
SiHF9540-E3
IRF9540
SnPb
SiHF9540

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 100
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 19
Continuous Drain Current VGS at - 10 V ID
TC = 100 °C - 13 A
Pulsed Drain Currenta IDM - 72
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 640 mJ
Repetitive Avalanche Currenta IAR - 19 A
Repetitive Avalanche Energya EAR 15 mJ
Maximum Power Dissipation TC = 25 °C PD 150 W
Peak Diode Recovery dV/dtc dV/dt - 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = - 19 A (see fig. 12).
c. ISD  - 19 A, dI/dt  200 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91078 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9540, SiHF9540
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.087 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = - 100 V, VGS = 0 V - - - 100
Zero Gate Voltage Drain Current IDSS μA
VDS = - 80 V, VGS = 0 V, TJ = 150 °C - - - 500
Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 11 Ab - - 0.20 
Forward Transconductance gfs VDS = - 50 V, ID = - 11 Ab 6.2 - - S
Dynamic
Input Capacitance Ciss - 1400 -
VGS = 0 V,
Output Capacitance Coss VDS = - 25 V, - 590 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 140 -
Total Gate Charge Qg - - 61
ID = - 19 A, VDS = - 80 V,
Gate-Source Charge Qgs VGS = - 10 V - - 14 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 29
Turn-On Delay Time td(on) - 16 -
Rise Time tr VDD = - 50 V, ID = - 19 A, - 73 -
ns
Turn-Off Delay Time td(off) Rg = 9.1 , RD = 2.4, see fig. 10b - 34 -
Fall Time tf - 57 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 7.5 -
S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D

- - - 19
showing the
A
integral reverse G

Pulsed Diode Forward Currenta ISM p - n junction diode S - - - 72

Body Diode Voltage VSD TJ = 25 °C, IS = - 19 A, VGS = 0 Vb - - - 5.0 V

Body Diode Reverse Recovery Time trr - 130 260 ns
TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μsb
Body Diode Reverse Recovery Charge Qrr - 0.35 0.70 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91078

2 S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9540, SiHF9540
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

102 VGS
Top - 15 V
- 10 V
- 8.0 V
- ID, Drain Current (A)

- ID, Drain Current (A)

- 7.0 V
- 6.0 V 25 °C
- 5.5 V
- 5.0 V
Bottom - 4.5 V 175 °C

101
101
- 4.5 V

20 µs Pulse Width 20 µs Pulse Width

TC = 25 °C VDS = - 50 V

100 101 4 5 6 7 8 9 10

91078_01 - VDS, Drain-to-Source Voltage (V) 91078_03 - VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

3.0
VGS ID = - 19 A
Top - 15 V VGS = - 10 V
- 10 V 2.5
- 8.0 V
- ID, Drain Current (A)

- 7.0 V
- 6.0 V 2.0
(Normalized)

- 5.5 V
- 5.0 V
Bottom - 4.5 V 1.5

101 1.0
- 4.5 V
0.5
20 µs Pulse Width
TC = 175 °C
0.0
100 101 - 60- 40 - 20 0 20 40 60 80 100 120 140 160 180

91078_02 - VDS, Drain-to-Source Voltage (V) 91078_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 175 ° C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91078 www.vishay.com

S11-0512-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9540, SiHF9540
Vishay Siliconix

3000
VGS = 0 V, f = 1 MHz

- ISD, Reverse Drain Current (A)

Ciss = Cgs + Cgd, Cds Shorted
2500 Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)

2000
101
175 °C
Ciss 25 °C
1500

1000
Coss
100
500
Crss
VGS = 0 V
0
100 101 0.0 1.0 2.0 3.0 4.0 5.0

91078_05 - VDS, Drain-to-Source Voltage (V) 91078_07 - VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 103
ID = - 19 A Operation in this area limited
- VGS, Gate-to-Source Voltage (V)

5
by RDS(on)
VDS = - 80 V 2
16
- ID, Drain Current (A)

VDS = - 50 V 102
5
VDS = - 20 V 100 µs
12 2

10 1 ms
5
8 10 ms
2

1
4 5 TC = 25 °C
For test circuit TJ = 175 °C
2
see figure 13 Single Pulse
0 0.1
2 5 2 5 2 5 2 5
0 10 20 30 40 50 60 0.1 1 10 102 103

91078_06 QG, Total Gate Charge (nC) 91078_08 - VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91078

4 S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9540, SiHF9540
Vishay Siliconix

RD
VDS

VGS
D.U.T.
RG -
+VDD
20
- 10 V
Pulse width ≤ 1 µs
16 Duty factor ≤ 0.1 %
- ID, Drain Current (A)

12
Fig. 10a - Switching Time Test Circuit

8
td(on) tr td(off) tf
VGS
4 10 %

0
25 50 75 100 125 150 175
90 %
91078_09 TC, Case Temperature (°C)
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
D = 0.5
PDM
0.2

0.1 0.1 t1
0.05 t2
0.02 Single Pulse Notes:
0.01 (Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91078_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91078 www.vishay.com

S11-0512-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9540, SiHF9540
Vishay Siliconix

L IAS
VDS
Vary tp to obtain
required IAS
VDS
RG D.U.T
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 Ω
VDS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

2000
ID
EAS, Single Pulse Energy (mJ)

Top - 7.8 A
1600 - 13 A
Bottom - 19 A

1200

800

400

VDD = - 25 V
0
25 50 75 100 125 150 175

91078_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF

QGS QGD -

D.U.T. + VDS

VG
VGS

- 3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91078

6 S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF9540, SiHF9540
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T. +
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- - +

Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -

Note
• Compliment N-Channel of D.U.T. for driver

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = - 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current

ISD
Ripple ≤ 5 %

Note
a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91078.

Document Number: 91078 www.vishay.com

S11-0512-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
A MILLIMETERS INCHES
E
F DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
ØP b 0.69 1.01 0.027 0.040
Q

b(1) 1.20 1.73 0.047 0.068

H(1)

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610
D2 12.19 12.70 0.480 0.500
D

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
1 2 3
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L(1)

L 13.35 14.02 0.526 0.552

M* L(1) 3.32 3.82 0.131 0.150
ØP 3.54 3.94 0.139 0.155
b(1)
Q 2.60 3.00 0.102 0.118
L

ECN: T14-0413-Rev. P, 16-Jun-14

DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
C Heatsink hole for HVM
b
e
J(1)
e(1)

D2

Revison: 16-Jun-14 1 Document Number: 71195

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12 1 Document Number: 91000