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    Dimensions in MM (Inches) .: TO66 (TO213AA) Pinouts

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    joao victor
    This document provides specifications for a 2N5430X bipolar NPN transistor in a hermetically sealed TO66 metal package. Key specifications include a maximum collector-emitter voltage of 100V, continuous collector current of 7A, typical current gain between 60-240, and maximum power dissipation of 40W. The transistor has a minimum frequency of 30MHz.

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    Dimensions in MM (Inches) .: TO66 (TO213AA) Pinouts

    Uploaded by

    joao victor
    63 views1 page
    This document provides specifications for a 2N5430X bipolar NPN transistor in a hermetically sealed TO66 metal package. Key specifications include a maximum collector-emitter voltage of 100V, continuous collector current of 7A, typical current gain between 60-240, and maximum power dissipation of 40W. The transistor has a minimum frequency of 30MHz.

    Original Description:

    transistor 2n5430

    Original Title

    2n5430x

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    This document provides specifications for a 2N5430X bipolar NPN transistor in a hermetically sealed TO66 metal package. Key specifications include a maximum collector-emitter voltage of 100V, continuous collector current of 7A, typical current gain between 60-240, and maximum power dissipation of 40W. The transistor has a minimum frequency of 30MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    63 views1 page

    Dimensions in MM (Inches) .: TO66 (TO213AA) Pinouts

    Uploaded by

    joao victor
    This document provides specifications for a 2N5430X bipolar NPN transistor in a hermetically sealed TO66 metal package. Key specifications include a maximum collector-emitter voltage of 100V, continuous collector current of 7A, typical current gain between 60-240, and maximum power dissipation of 40W. The transistor has a minimum frequency of 30MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2N5430X

    Dimensions in mm (inches).
    Bipolar NPN Device in a
    Hermetically sealed TO66
    6.35 (0.250)
    3.68 8.64 (0.340) Metal Package.
    (0.145) rad. 3.61 (0.142)
    max. 4.08(0.161)
    rad.

    Bipolar NPN Device.


    0.71 (0.028)
    0.86 (0.034)

    1 2

    11.94 (0.470)
    12.70 (0.500)
    24.13 (0.95)
    24.63 (0.97)

    VCEO = 100V
    14.48 (0.570)
    14.99 (0.590)

    IC = 7A

    All Semelab hermetically sealed products


    can be processed in accordance with the
    requirements of BS, CECC and JAN,
    1.27 (0.050) JANTX, JANTXV and JANS specifications
    4.83 (0.190) 1.91 (0.750)
    5.33 (0.210)
    9.14 (0.360)
    min.

    TO66 (TO213AA)
    PINOUTS
    1 – Base 2 – Emitter Case – Collector

    Parameter Test Conditions Min. Typ. Max. Units


    VCEO* 100 V
    IC(CONT) 7 A
    hFE @ 2/2 (VCE / IC) 60 240 -
    ft 30M Hz
    PD 40 W

    * Maximum Working Voltage

    This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.


    Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
    to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Generated


    E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 1-Aug-02

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