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    Irf450 PDF

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    Phong Do
    This document provides specifications for an IRF450 N-channel power MOSFET. Key details include: - It is housed in a hermetically sealed TO-3 metal package. - It has an absolute maximum drain-source voltage of 500V and continuous drain current of 13A. - Electrical characteristics include a typical on-resistance of 0.4 ohms and gate threshold voltage between 2-4V.

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    © All Rights Reserved
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    Irf450 PDF

    Uploaded by

    Phong Do
    37 views3 pages
    This document provides specifications for an IRF450 N-channel power MOSFET. Key details include: - It is housed in a hermetically sealed TO-3 metal package. - It has an absolute maximum drain-source voltage of 500V and continuous drain current of 13A. - Electrical characteristics include a typical on-resistance of 0.4 ohms and gate threshold voltage between 2-4V.

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    IRF450.pdf

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    This document provides specifications for an IRF450 N-channel power MOSFET. Key details include: - It is housed in a hermetically sealed TO-3 metal package. - It has an absolute maximum drain-source voltage of 500V and continuous drain current of 13A. - Electrical characteristics include a typical on-resistance of 0.4 ohms and gate threshold voltage between 2-4V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    37 views3 pages

    Irf450 PDF

    Uploaded by

    Phong Do
    This document provides specifications for an IRF450 N-channel power MOSFET. Key details include: - It is housed in a hermetically sealed TO-3 metal package. - It has an absolute maximum drain-source voltage of 500V and continuous drain current of 13A. - Electrical characteristics include a typical on-resistance of 0.4 ohms and gate threshold voltage between 2-4V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    IRF450

    MECHANICAL DATA
    Dimensions in mm (inches)
    N–CHANNEL
    39.95 (1.573)
    max.
    POWER MOSFET
    30.40 (1.197)
    30.15 (1.187)

    17.15 (0.675)
    16.64 (0.655)

    4.09 (0.161)
    3.84 (0.151)
    VDSS 500V
    dia.
    2
    ID(cont) 13A
    26.67 (1.050)
    11.18 (0.440)
    10.67 (0.420)

    2 plcs.
    max.

    1 RDS(on) 0.4W

    20.32 (0.800)
    FEATURES
    18.80 (0.740)
    dia.
    • HERMETICALLY SEALED TO–3 METAL
    7.87 (0.310)
    6.99 (0.275)

    PACKAGE
    1.78 (0.070)
    1.52 (0.060)

    • SIMPLE DRIVE REQUIREMENTS


    12.07 (0.475)
    11.30 (0.445)

    1.09 (0.043)
    0.97 (0.038)
    dia. • SCREENING OPTIONS AVAILABLE
    2 plcs.

    TO–3 Metal Package


    Pin 1 – Gate Pin 2 – Source Case – Drain

    ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)


    VGS Gate – Source Voltage ±20V
    ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 12A
    ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 7.75A
    IDM Pulsed Drain Current 1 48A
    PD Power Dissipation @ Tcase = 25°C 150W
    Linear Derating Factor 1.2W/°C
    EAS Single Pulse Avalanche Energy 2 8.0mJ
    IAR Avalanche Current 2 12A
    dv/dt Peak Diode Recovery 3 3.5V/ns
    TJ , Tstg Operating and Storage Temperature Range -55 to +150°C
    TL Lead Temperature 1.6mm (0.63”) from case for 10 sec. 300°C

    Notes
    1) Pulse Test: Pulse Width £ 300ms, d £ 2%
    2) @ VDD = 25V , L ³ 480mH , RG = 25W , Peak IL = 28A , Starting TJ = 25°C
    3) @ ISD £ 28A , di/dt £ 170A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 9.1W

    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 10/99
    E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
    IRF450

    ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)


    Parameter Test Conditions Min. Typ. Max. Unit
    STATIC ELECTRICAL RATINGS
    BVDSS Drain – Source Breakdown Voltage VGS = 0 ID = 1mA 500 V
    DBVDSS Temperature Coefficient of Reference to 25°C
    0.78 V / °C
    DTJ Breakdown Voltage ID = 1mA
    Static Drain – Source On–State VGS = 10V ID = 7.75A 0.4
    RDS(on) W
    Resistance 1 VGS = 10V ID = 12A 0.5
    VGS(th) Gate Threshold Voltage VDS = VGS ID = 250mA 2 4 V
    gfs Forward Transconductance 1 VDS ³ 15V IDS = 7.75A 5.5 S (É)
    VGS = 0 VDS = 0.8BVDSS 25
    IDSS Zero Gate Voltage Drain Current mA
    TJ = 125°C 250
    IGSS Forward Gate – Source Leakage VGS = 20V 100
    nA
    IGSS Reverse Gate – Source Leakage VGS = –20V –100
    DYNAMIC CHARACTERISTICS
    Ciss Input Capacitance VGS = 0 2700
    Coss Output Capacitance VDS = 25V 600 pF
    Crss Reverse Transfer Capacitance f = 1MHz 240
    Qg Total Gate Charge VGS = 10V 55 120
    Qgs Gate – Source Charge ID = 12A 5 19 nC
    Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS 27 70
    td(on) Turn–On Delay Time 35
    VDD = 250V
    tr Rise Time 190
    ID = 12A ns
    td(off) Turn–Off Delay Time 170
    RG = 2.35W
    tf Fall Time 130
    SOURCE – DRAIN DIODE CHARACTERISTICS
    IS Continuous Source Current 12
    A
    ISM Pulse Source Current 2 48
    IS = 12A TJ = 25°C
    VSD Diode Forward Voltage 1 1.7 V
    VGS = 0
    trr Reverse Recovery Time IF = 12A TJ = 25°C 1600 ns
    Qrr Reverse Recovery Charge 1 di / dt £ 100A/ms VDD £ 50V 14 mC
    ton Forward Turn–On Time Negligible
    PACKAGE CHARACTERISTICS
    LD Internal Drain Inductance (measured from 6mm down drain lead to centre of die) 5.0
    nH
    LS Internal Source Inductance (from 6mm down source lead to source bond pad) 13
    THERMAL CHARACTERISTICS
    RqJC Thermal Resistance Junction – Case 1.0
    RqCS Thermal Resistance Case – Sink 0.12 °C/W
    RqJA Thermal Resistance Junction – Ambient 30
    Notes
    1) Pulse Test: Pulse Width £ 300ms, d £ 2%
    2) Repetitive Rating – Pulse width limited by maximum junction temperature.
    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 10/99
    E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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