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EC 6201 Model Qp1

This document contains an exam for an Electronics and Communication Engineering course. It has two parts - Part A contains 10 short answer questions worth 2 marks each on topics related to electron devices. Part B contains 5 long answer questions worth 16 marks each, covering topics such as PN junction diodes, transistor characteristics, JFETs and MOSFETs. Students are asked to derive equations, explain concepts, compare devices and determine values based on given specifications and diagrams. The exam tests the students' understanding of fundamental electronic components and their applications.

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vaijayanthi nagarajan
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85 views3 pages

EC 6201 Model Qp1

This document contains an exam for an Electronics and Communication Engineering course. It has two parts - Part A contains 10 short answer questions worth 2 marks each on topics related to electron devices. Part B contains 5 long answer questions worth 16 marks each, covering topics such as PN junction diodes, transistor characteristics, JFETs and MOSFETs. Students are asked to derive equations, explain concepts, compare devices and determine values based on given specifications and diagrams. The exam tests the students' understanding of fundamental electronic components and their applications.

Uploaded by

vaijayanthi nagarajan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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INDRA GANESAN COLLEGE OF ENGINEERING

I Model Examinations – March 2014


B.E. Electronics & Commn. Engg. – II Semester

Course Code: EC 6201 Max. Marks: 100


Course: Electron Devices Duration: 3 hrs.
-----------------------------------------------------------------------------------------------------------------------
PART – A Answer the following questions (10 X2 = 20)
1. State the effect of temperature on PN junction diode.
2. What is diffusion capacitance.
3. Mention the two types of junction capacitance.
4. Give the biasing arrangement for an NPN transistor to operate in the active region.
5. Why collector region of a transistor is larger in area than emitter region.
6. What is pinch off voltage of a JFET?
7. Compare BJT and FET.
8. When a FET acts as a voltage variable resistor.
9. Write the equation for drain current of JFET.
10. Differentiate between E-MOSFET and D-MOSFET.

PART – B Answer the following questions (5 X 16 = 80)


11. (a) Draw the energy band diagram of PN junction diode and
derive the expression for the contact difference of potential (8)
(b) Consider a germanium PN junction at 300 K with doping concentration
NA=1.5 X 1018 cm-3 and ND = 2X 1016 cm-3 in the p and n sides of the junction
Respectively. Assuming the intrinsic carrier concentration of germanium
ni=2.5 X 1013 cm-3 at 300 K, determine the contact potential across the
junction. (4)
(c ) The resistivities of the two sides of an abrupt germanium diode are
2 Ω cm(p side) and 1 Ω cm(n side) at 300 k. The mobility of electrons and holes in
Germanium are 3800 cm2/V-sec and 1800 cm2/V-sec respectively. Calculate the
height Eo of the potential barrier. (4)
OR
12.(a) Describe the action of PN diode with respect to VI characteristics (8)
(b) Describe the following (i) Avalanche breakdown (ii) Zener break down (8)
13. (a) The reverse leakage current of a transistor when conncected in CB
configuration is 0.2µA and it is 18 µA when the same transistor is connected in CE
configuration. Calculate αDC , βDC. of the transistor. (6)
(b) Explain the Gummel-Poon Model with equivalent circuit (10)
OR
14.(a) Derive the relationship between low frequency h-parameters and high frequency
hybrid parameters for a transistor in CE configuration (8)
(b) Draw and explain the characteristics of PNP transistor in CB configuration (8)
15. (a) Derive the current equation for PN junction diode. (8)
(b) Describe briefly multi-emitter transistor and its applications. (8)
OR
16.(a) Sketch and explain the construction of N-channel JFET. Give also its symbol (4)
(b) Explain the operation of N-channel JFET. Sketch and explain drain
Characteristics. (8)
(c) Define the following parameters of JGET.(i) transconductance (ii) amplification
Factor. (4)

17. (a) With the help of suitable diagrams explain the working of different types of
MOSFET. (8)
(b) Describe briefly about the small signal equivalent circuit of JFET and its
associated parameters with necessary diagrams . (8)
OR
18. (a) Derive the expression for JFET drain current in enhancement mode and
depletion mode. (16)

19.(a) Compare MOSFET and JFET (8)


(b) What is the effect of channel length modulation in MOSFET. (8)

OR
20.(a) Derive the expression for depletion layer width in a N-channel JFET with neat
diagram (8)
(b) Describe the applications of JFET. (8)

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