S.

No Questions
1 The layer formed at the p-n junction , is called depletion layer, why so?
2 Illustrate Fermi level in your own words.
3 Organize Semiconductors, conductors and insulators based on the Fermi levels.
4 Explain about intrinsic semiconductors.
5 Explain about extrinsic semiconductors.
6 Define drift current in semiconductor.
7 For a silicon PN junction diode operating in forward bias, if the forward voltage applied is 0.6 V
and the forward current is10mA, calculate the diode resistance. Assume the diode is ideal with
no series resistance.
8 Discuss importance of valence shell and valence electrons?
9 Differentiate between intrinsic and extrinsic semiconductors.
10 Explain the difference between P-type and N-type semiconductor materials.
11 Discuss an effect of temperature upon extrinsic semiconductor.
12 Define PN junction with its symbolic representation.
13 Describe limitations in the operating conditions of PN junction.
14 Discuss about an importance of using silicon material over germanium for semiconductor
devices.
15 Explain properties of an ideal diode.
16 The conductivity of an intrinsic semi-conductor is very low. Why?
17 Why does a potential barrier set up across a junction diode?
18 Define the term Drift velocity.
19 Explain what is the main factor for controlling the thermal generation and
recombination?
20 Describe the physical Mechanism for Zener Breakdown.
21 List the applications of the Zener diode.
22 Explain avalanche breakdown in a diode and Zener breakdown in a Zener diode.
23 Draw a circuit diagram for p-n junction diode in forward bias. Sketch the voltage-current
graph for the same.
24 Draw a circuit diagram for the reverse biased p-n junction diode. Sketch the voltage
current graph for the same.
25 On the basis of conductivity, classify the solids. Explain their behavior on the basis of
energy band phenomenon.
26 Derive their expressions and deduce Einstein relation.
27 For a semiconductor material with a resistivity (ρ) of 2×10-3 Ω⋅m a carrier mobility (μ) of
0.15 m2/V⋅s, calculate the conductivity (σ) of the material.
28 For a silicon PN junction diode operating in forward bias, if the forward current is 5 mA
and the forward voltage is 0.7 V, calculate the diode resistance. Assume the diode is an
ideal diode with no series resistance.
29 Discuss one practical application where Zener diodes are commonly used due to their
voltage regulation characteristics.
30 Describe the drift and diffusion currents in a semiconductor.
31 Classify the solids into conductor, semiconductor and insulators based on band theory.
32
a) Explicate the principle and characteristics of Avalanche diode.
b) Engrave the brief note on structure and mechanism of Avalanche diode.
33 a) Explain the concept of charge carriers generation and recombination.
b) Derive the expression for current generated due to diffusion of charge carriers in
semiconductors in the absence of electric field.
34 For a silicon PN junction diode with a forward voltage drop(Vf) of 0.7 Volt and a
forward current (If) of 15 milli-Amperes, and assuming ideal behavior with no series
resistance
1. Calculate the diode resistance and its unit.
2. Calculate the power dissipated across the diode with its unit.
35 For a Zener diode with a Zener voltage (VZ) of 6 V and a Zener current (IZ) of 20 (milli-
Amperes), and assuming ideal behavior.
1. Calculate the Zener resistance and its Unit.
2. Calculate the power dissipated across the Zener diode and its unit.
36 • Explain how a Zener diode differs from a regular PN junction diode.
• Provide an example of a practical application where Zener diodes are commonly
used, and explain why their specific characteristics make them suitable for this
application.

37 Explain the concept of doping in semiconductors and how it influences their electrical
conductivity. Provide examples of n-type and p-type semiconductors.
38 Describe the formation and characteristics of a PN junction in a semiconductor. Provide
an overview of semiconductor devices such as diodes and transistors, highlighting their
basic functionalities and applications. Discuss the importance of semiconductor
technology in the modern electronics industry.
39 Describe the operation of a basic semiconductor diode. Include the terms "p-n junction,"
"forward bias," and "reverse bias" in your explanation. Also, mention one practical
application of semiconductor diodes.
40 Explain the functioning of a Zener diode and its specific characteristic that distinguishes
it from a regular diode. Provide one practical application where Zener diodes are
commonly used.
41
42 Define Fermi level in the context of semiconductor physics. Explain how the Fermi level
is influenced by temperature and doping in a semiconductor material.
43 Explain the concept of the intrinsic carrier concentration. How does temperature affect
the intrinsic carrier concentration in a semiconductor material?
44 Define carrier diffusion and carrier drift in the context of semiconductor physics.
Provide a brief explanation of how each mechanism contributes to the movement of
charge carriers within a semiconductor.
45 Explain the significance of the Einstein Relation in the context of semiconductor
physics. How does it relate the diffusion coefficient to the mobility of charge carriers.
46 Explain how mobility is related to carrier transport and how resistivity is influenced by
the concentration of carriers. Provide a simple equation relating resistivity, mobility, and
carrier concentration in a semiconductor material.
47 Discuss the physical interpretation of the continuity equation in the context of electrical
current flow. How does the equation ensure the conservation of charge, and what are the
implications of the divergence term in the equation?
48 Define the term "Zener voltage" and explain its significance in Zener diodes. Describe
how a Zener diode behaves under forward bias and reverse bias conditions, hhlighting its
key characteristics.
49 Provide the formula for the Einstein Relation and mention the variables involved.
50 Discuss one practical application or implication of the Continuity Equation in
semiconductor devices.
51 a. Define carrier mobility and resistivity in the context of semiconductors. b. Discuss the
relationship between carrier mobility and resistivity in semiconductor materials.
52 Consider a Zener diode with the following parameters:
• Zener voltage (VZ): 12 V
• Zener resistance (RZ): 10 ohm
• Load resistance (RL): 300 ohm
1. Determine the Zener Current and its Unit.
2. Calculate the Zener Power Dissipation and Write its unit.
3. Find the Total Circuit Current and its unit.

53 Consider a Zener diode with the following parameters: