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    Isc Triacs TIC226M: INCHANGE Semiconductor Product Specification

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    Andy ANDY Lauw LAUW
    This document provides the product specification for the TIC226M sensitive gate triac from INCHANGE Semiconductor. The triac has a TO-220 package and maximum ratings including a 600V repetitive peak off-state voltage. Electrical characteristics include a maximum gate trigger current of 50mA and a typical on-state voltage of 2.1V at 12A. Additional information on the triac can be found at iscsemi.cn.

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    Isc Triacs TIC226M: INCHANGE Semiconductor Product Specification

    Uploaded by

    Andy ANDY Lauw LAUW
    33 views1 page
    This document provides the product specification for the TIC226M sensitive gate triac from INCHANGE Semiconductor. The triac has a TO-220 package and maximum ratings including a 600V repetitive peak off-state voltage. Electrical characteristics include a maximum gate trigger current of 50mA and a typical on-state voltage of 2.1V at 12A. Additional information on the triac can be found at iscsemi.cn.

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    Triac

    Original Title

    Tic226m Isc

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    This document provides the product specification for the TIC226M sensitive gate triac from INCHANGE Semiconductor. The triac has a TO-220 package and maximum ratings including a 600V repetitive peak off-state voltage. Electrical characteristics include a maximum gate trigger current of 50mA and a typical on-state voltage of 2.1V at 12A. Additional information on the triac can be found at iscsemi.cn.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    33 views1 page

    Isc Triacs TIC226M: INCHANGE Semiconductor Product Specification

    Uploaded by

    Andy ANDY Lauw LAUW
    This document provides the product specification for the TIC226M sensitive gate triac from INCHANGE Semiconductor. The triac has a TO-220 package and maximum ratings including a 600V repetitive peak off-state voltage. Electrical characteristics include a maximum gate trigger current of 50mA and a typical on-state voltage of 2.1V at 12A. Additional information on the triac can be found at iscsemi.cn.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    INCHANGE Semiconductor isc Product Specification

    isc Triacs TIC226M

    FEATURES
    ·With TO-220 package
    ·Sensitive Gate Triacs
    ·Glass Passivated
    ·Max IGT of 50 mA (Quadrants 1~3)

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    UNIT
    SYMBOL PARAMETER MIN

    VDRM Repetitive peak off-state voltage 600 V

    VRRM Repetitive peak reverse voltage 600 V

    IT(RMS) RMS on-state current (full sine wave)TC=85℃ 8 A

    ITSM Non-repetitive peak on-state current 70 A

    Tj Operating junction temperature 110 ℃

    Tstg Storage temperature -45~150 ℃

    Rth(j-c) Thermal resistance, junction to case 1.8 ℃/W

    Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃/W

    ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)


    SYMBOL PARAMETER CONDITIONS TYP. MAX UNIT

    IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ 2.0 mA

    Ⅰ 2 50

    Ⅱ 12 50
    IGT Gate trigger current Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs mA
    Ⅲ 9 50

    Ⅳ 20

    IH Holding current Vsupply = 12 V†,IG= 0 initial ITM=100mA 30 mA

    VGT Gate trigger voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs 2 V

    VTM On-state voltage IT= 12A; IG= 50mA 2.1 V

    isc website：www.iscsemi.cn

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