T1620W

® T1630W

16A SNUBBERLESS™ TRIAC

A2
MAIN FEATURES
Symbol Value Unit
IT(RMS) 16 A G

VDRM/VRRM 600 and 800 V A1

IGT 20 to 30 mA

DESCRIPTION
G
Based on ST’ Snubberless technology providing high A2
A1
commutation performances, the T1620-600W/800W
& T1630-600W/800W are specially recommended for
use on inductive loads, thanks to their high commuta- ISOWATT220AB
tion performances, such as vacuum cleaners, heating (Plastic)
regulation. They comply with UL standards (ref.
E81734).

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit
IT(RMS) RMS on-state current (Full sine wave) Tc= 80°C 16 A
ITSM Non repetitive surge peak on-state F = 50Hz t = 20ms 200 A
current (Full cycle, Tj initial = 25°C )
F = 60Hz t = 16.7ms 218
2 2
I t I t Value for fusing tp = 10 ms 220 A2s
dI/dt Critical rate of rise of on-state current F = 120 Hz Tj = 125°C 50 A/µs
IG = 2 x IGT, tr ≤ 100ns
VDSM/VRSM Non repetitive surge peak off-state tp = 10ms Tj = 25°C VDRM/VRRM V
voltage + 100
IGM Peak gate current tp = 20µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
Tstg Storage junction temperature range - 40 to + 150 °C
Tj Operating junction temperature range - 40 to + 125

March 2004 - Ed: 2 1/5

T820W / T830W

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Quadrant T1620 T1630 Unit
(1)
IGT VD=12V RL=30Ω I-II-III MAX. 20 30 mA
VGT I-II-III MAX. 1.3 V
VGD VD=VDRM RL=3.3kΩ Tj = 125°C I-II-III MIN. 0.2 V
(2)
IH IT= 250mA MAX. 35 50 mA
IL IG = 1.2IGT I - III MAX. 70 80 mA
II MAX. 80 100 mA
(2)
dV/dt VD=67% VDRM Gate open Tj = 125°C MIN. 300 500 V/µs
(dI/dt)c (2) Without snubber Tj = 125°C MIN. 8.5 11 A/ms

STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
VTM(2) ITM = 22.5 A tp = 380µs Tj = 25°C MAX. 1.4 V
(2)
VTO Threshold voltage Tj = 125°C MAX. 0.85 V
Rd(2) Dynamic resistance Tj = 125°C MAX. 20 mΩ
IDRM VDRM = VRRM Tj = 25°C MAX 5 µA
IRRM Tj = 125°C 1 mA
Note 1: Minimum IGT is guaranted at 5% of IGT max.
Note 2: For both polarities of A2 referenced to A1.

THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient 60 °C/W
Rth(j-c) Junction to case (AC) 3.1 °C/W

PRODUCT SELECTOR
Part Number Voltage Sensitivity Type Package
T1620-600W 600V 20 mA Snubberless ISOWATT220AB
T1620-800W 800V 20 mA Snubberless ISOWATT220AB
T1630-600W 600V 30 mA Snubberless ISOWATT220AB
T1630-800W 800V 30 mA Snubberless ISOWATT220AB

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 T820W / T830W

ORDERING INFORMATION
T 16 xx - x00 W
PACKAGE:
TRIAC SERIES W: ISOWATT220AB

CURRENT: 16A VOLTAGE:

600: 600V
800: 800V
SENSITIVITY:
20: 20mA
30: 30mA

OTHER INFORMATION
Part Number Marking Weight Base quantity Packing mode
T1620-600W T1620600W 2.3 g 50 Tube
T1620-800W T1620800W 2.3 g 50 Tube
T1630-600W T1630600W 2.3 g 50 Tube
T1630-800W T1630800W 2.3 g 50 Tube

Fig. 1: Maximum power dissipation versus RMS Fig. 2: RMS on-state current versus case tem-
on-state current. perature.
P(W) IT(RMS)(A)
18 18
α=180° α=180°
16 16
14 14

12 12

10 10

8 8

6 6
180° 4
4 α
2
α 2
IT(RMS)(A) Tc(°C)
0 0
0 2 4 6 8 10 12 14 16 0 25 50 75 100 125

Fig. 3: Relative variation of thermal impedance Fig. 4: On-state characteristics (maximum val-
versus pulse duration. ues).

K=[Zth/Rth] ITM(A)
100
1.E+00

Zth(j-c)

1.E-01 Tj=125°C
Zth(j-a) Tj=25°C

10

1.E-02

Tj max. :
tp(s) VTM(V)
Vto = 0.85 V
Rd = 20 mΩ
1.E-03
1
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
0.0 0.5 1.0 1.5 2.0 2.5 3.0

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T820W / T830W

Fig. 5: Surge peak on-state current versus number Fig. 6: Non repetitive surge peak on-state current
of cycles. for a sinusoidal pulse with width tp<10ms, and
corresponding value of I2t.
ITSM(A) 2 2
ITSM(A), I t (A s)
220
10000
200 Tj initial=25°C

180 t=20ms dI/dt limitation:

Non repetitive
50A/µs
160 Tj initial=25°C

140
120
100 1000
ITSM

80 Repetitive
Tc=80°C
60
40 I²t

20 Number of cycles
tp(ms)
0
100
1 10 100 1000
0.01 0.10 1.00 10.00

Fig. 7: Relative variation of gate trigger current, Fig. 8: Relative variation of critical rate of decrease
holding current and latching current versus junc- of main current versus reapplied dV/dt (typical val-
tion temperature (typical values). ues).

IGT, IH, IL[Tj] / IGT, IH, IL[Tj=25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
3.0 2.0

1.8
2.5
1.6

1.4
2.0 IGT
1.2
1.5 1.0

IH & IL 0.8
1.0
0.6

0.4
0.5
Tj(°C) 0.2 dV/dt (V/µs)
0.0 0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.1 1.0 10.0 100.0

Fig. 9: Relative variation of critical rate of decrease

of main current versus junction temperature.

(dI/dt)c [Tj] / (dI/dt)c [Tj=125°C]

8

1
Tj(°C)
0
0 25 50 75 100 125

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 T820W / T830W

PACKAGE MECHANICAL DATA

ISOWATT220AB

DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126

■ Cooling method : C
■ Recommended torque value : 0.55 m.N.
■ Maximum torque value : 0.70 m.N.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
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