DISCRETE SEMICONDUCTORS

DATA SHEET

MAC223 series
Triacs
Product specification July 2001
Philips Semiconductors Product specification

Triacs MAC223 series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX MAX. UNIT
intended for use in applications requiring
high bidirectional transient and blocking MAC223 A6 A8
voltage capability and high thermal
cycling performance. Typical VDRM Repetitive peak off-state 400 600 V
applications include motor control, voltages
industrial and domestic lighting, heating IT(RMS) RMS on-state current 25 25 A
and static switching. ITSM Non-repetitive peak on-state 230 230 A
current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
tab

1 main terminal 1
T2 T1
2 main terminal 2

3 gate
tab main terminal 2 1 23 G

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
MAC223 A6 A8
VDRM Repetitive peak off-state - 4001 6001 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 91 ˚C - 25 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 190 A
t = 16.7 ms - 230 A
I2t I2t for fusing t = 10 ms - 180 A2s
dIT/dt Repetitive rate of rise of ITM = 30 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

July 2001 2 Rev 1.000

Philips Semiconductors Product specification

Triacs MAC223 series

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 1.0 K/W
junction to mounting base half cycle - - 1.4 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 6 50 mA
T2+ G- - 10 50 mA
T2- G- - 11 50 mA
T2- G+ - 23 75 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 8 40 mA
T2+ G- - 30 60 mA
T2- G- - 18 40 mA
T2- G+ - 15 60 mA
IH Holding current VD = 12 V; IGT = 0.1 A
T2+ - 7 30 mA
T2- - 12 30 mA
VT On-state voltage IT = 30 A - 1.3 1.55 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 100 300 - V/µs
off-state voltage exponential waveform; gate open circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 25 A; - 10 - V/µs
commutating voltage dIcom/dt = 9 A/ms; gate open circuit
tgt Gate controlled turn-on ITM = 30 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs

July 2001 3 Rev 1.000

Philips Semiconductors Product specification

Triacs MAC223 series

Ptot / W Tmb(max) / C IT(RMS) / A BTA140

40 85 30

91 C
= 180 25
30 1
95
120
90 20
60
20 105 15
30

10
10 115
5

0 125 0
0 5 10 15 20 25 30 -50 0 50 100 150
IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.

ITSM / A IT(RMS) / A
1000 50

40

30
100
dI T /dt limit
20
IT I TSM
T2- G+ quadrant
T time 10

Tj initial = 25 C max
10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 91˚C.

ITSM / A VGT(Tj)
200
VGT(25 C)
1.6
IT ITSM

T time 1.4
150
Tj initial = 25 C max
1.2

100
1

0.8
50
0.6

0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.

July 2001 4 Rev 1.000

Philips Semiconductors Product specification

Triacs MAC223 series

IGT(Tj) IT / A BTA140
IGT(25 C) 80
5 Tj = 125 C
T2+ G+ Tj = 25 C
70
T2+ G- typ max
4 T2- G- 60 Vo = 1.073 V
T2- G+ Rs = 0.015 ohms
50
3
40

2 30

20
1
10

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BTA140

10
IL(25 C)
3

2.5 1
unidirectional

2 bidirectional

0.1
1.5

P tp
1 D

0.01
0.5 t

0 0.001
-50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.

IH(Tj) dV/dt (V/us)

1000
IH(25C)
3

2.5 off-state dV/dt limit

100
2

1.5 dIcom/dt =
25 A/ms 20 15 12 9.0 7.0
1 10

0.5

0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical commutation dV/dt versus junction
versus junction temperature Tj. temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.

July 2001 5 Rev 1.000

Philips Semiconductors Product specification

Triacs MAC223 series

Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7

2,8 5,9
min

15,8
max

3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".

July 2001 6 Rev 1.000

Philips Semiconductors Product specification

Triacs MAC223 series

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 2001 7 Rev 1.000

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

© Koninklijke Philips Electronics N.V. 2001 SCA73

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands XXXXXX/700/02/pp8 Date of release: July 2001 Document order number: 9397 750 08942