DISCRETE SEMICONDUCTORS

DATA SHEET

BT151 series C
Thyristors
Product specification April 2004
1;3 Semiconductors Product specification

Thyristors BT151 series C

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT151- 500C 650C 800C
bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V
capability and high thermal cycling VRRM voltages
performance. Typical applications IT(AV) Average on-state current 7.5 7.5 7.5 A
include motor control, industrial IT(RMS) RMS on-state current 12 12 12 A
and domestic lighting, heating and ITSM Non-repetitive peak on-state 100 100 100 A
static switching. current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
tab

1 cathode a k
2 anode

3 gate
tab anode 1 23 g

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBO PARAMETER CONDITIONS MIN. MAX. UNIT
L
-500C -650C -800C
VDRM, Repetitive peak - 5001 6501 800 V
VRRM off-state voltages
IT(AV) Average on-state half sine wave; Tmb ≤ 109 ˚C - 7.5 A
current
IT(RMS) RMS on-state current all conduction angles - 12 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C
on-state current prior to surge
t = 10 ms - 100 A
t = 8.3 ms - 110 A
I2t I2t for fusing t = 10 ms - 50 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/μs
on-state current after dIG/dt = 50 mA/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate - 5 V
voltage
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

April 2004 1 Rev 1.000

1;3 Semiconductors Product specification

Thyristors BT151 series C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 1.3 K/W
junction to mounting base
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA
IL Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA
VT On-state voltage IT = 23 A - 1.44 1.75 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C;
off-state voltage exponential waveform;
Gate open circuit 50 130 - V/μs
RGK = 100 Ω 200 1000 - V/μs
tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs
tq Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - μs
turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/μs;
dVD/dt = 50 V/μs; RGK = 100 Ω

April 2004 2 Rev 1.000

1;3 Semiconductors Product specification

Thyristors BT151 series C

Ptot / W Tmb(max) / C ITSM / A

15 105.5 120
conduction form ITSM
angle factor IT
degrees a a = 1.57
30 4
100
60 2.8 1.9 T time
90 2.2 2.2 Tj initial = 25 C max
10 120 1.9 112 80
180 1.57 2.8
4
60

5 118.5 40

20

0 125
0 1 2 3 4 5 6 7 8 0
1 10 100 1000
IT(AV) / A Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, Ptot, versus Fig.4. Maximum permissible non-repetitive peak
average on-state current, IT(AV), where on-state current ITSM, versus number of cycles, for
a = form factor = IT(RMS)/ IT(AV). sinusoidal currents, f = 50 Hz.

ITSM / A IT(RMS) / A
1000 25

20

dI T /dt limit 15
100

10
IT I TSM

T time 5
Tj initial = 25 C max

10 0
10us 100us 1ms 10ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 10ms. currents, f = 50 Hz; Tmb ≤ 109˚C.

IT(RMS) / A BT151 VGT(Tj)

15 VGT(25 C)
1.6
109 C
1.4

10
1.2

5 0.8

0.6

0 0.4
-50 0 50 100 150 -50 0 50 100 150
Tmb / C Tj / C
Fig.3. Maximum permissible rms current IT(RMS) , Fig.6. Normalised gate trigger voltage
versus mounting base temperature Tmb. VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

April 2004 3 Rev 1.000

1;3 Semiconductors Product specification

Thyristors BT151 series C

IGT(Tj) 30
IGT(25 C) Tj = 125 °C
3
IT Tj = 25 °C
(A)
2.5 typ
20
2

1.5 max

1 10

0.5 Vo = 1.06 V
Rs = 0.0304 ohms
0 0
-50 0 50 100 150 0 0.5 1 1.5 2
Tj / C VT (V)

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W)

10
IL(25 C) BT145
3

2.5 1

0.1
1.5

P tp
1 D

0.01

0.5 t

0 0.001
-50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.

IH(Tj) dVD/dt (V/us)

10000
IH(25 C)
3

2.5
1000
2
RGK = 100 Ohms
1.5

1 100 gate open circuit

0.5

0 10
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,
versus junction temperature Tj. dVD/dt versus junction temperature Tj.

April 2004 4 Rev 1.000

1;3 Semiconductors Product specification

Thyristors BT151 series C

MECHANICAL DATA

Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7

2,8 5,9
min

15,8
max

3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".

April 2004 5 Rev 1.000

NXP Semiconductors

Legal information

DATA SHEET STATUS

DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DEFINITIONS Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information
Product specification ⎯ The information and data
published in this document, including without limitation
provided in a Product data sheet shall define the
specifications and product descriptions, at any time and
specification of the product as agreed between NXP
without notice. This document supersedes and replaces all
Semiconductors and its customer, unless NXP
information supplied prior to the publication hereof.
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an Suitability for use ⎯ NXP Semiconductors products are
agreement be valid in which the NXP Semiconductors not designed, authorized or warranted to be suitable for
product is deemed to offer functions and qualities beyond use in life support, life-critical or safety-critical systems or
those described in the Product data sheet. equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
DISCLAIMERS
property or environmental damage. NXP Semiconductors
Limited warranty and liability ⎯ Information in this accepts no liability for inclusion and/or use of NXP
document is believed to be accurate and reliable. Semiconductors products in such equipment or
However, NXP Semiconductors does not give any applications and therefore such inclusion and/or use is at
representations or warranties, expressed or implied, as to the customer’s own risk.
the accuracy or completeness of such information and
Applications ⎯ Applications that are described herein for
shall have no liability for the consequences of use of such
any of these products are for illustrative purposes only.
information.
NXP Semiconductors makes no representation or
In no event shall NXP Semiconductors be liable for any warranty that such applications will be suitable for the
indirect, incidental, punitive, special or consequential specified use without further testing or modification.
damages (including - without limitation - lost profits, lost
Customers are responsible for the design and operation of
savings, business interruption, costs related to the
their applications and products using NXP
removal or replacement of any products or rework
Semiconductors products, and NXP Semiconductors
charges) whether or not such damages are based on tort
accepts no liability for any assistance with applications or
(including negligence), warranty, breach of contract or any
customer product design. It is customer’s sole
other legal theory.
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur Semiconductors product is suitable and fit for the
for any reason whatsoever, NXP Semiconductors’ customer’s applications and products planned, as well as
aggregate and cumulative liability towards customer for for the planned application and use of customer’s third
the products described herein shall be limited in party customer(s). Customers should provide appropriate
accordance with the Terms and conditions of commercial design and operating safeguards to minimize the risks
sale of NXP Semiconductors. associated with their applications and products.
NXP Semiconductors

Legal information

NXP Semiconductors does not accept any liability related that is open for acceptance or the grant, conveyance or
to any default, damage, costs or problem which is based implication of any license under any copyrights, patents or
on any weakness or default in the customer’s applications other industrial or intellectual property rights.
or products, or the application or use by customer’s third
Export control ⎯ This document as well as the item(s)
party customer(s). Customer is responsible for doing all
described herein may be subject to export control
necessary testing for the customer’s applications and
regulations. Export might require a prior authorization from
products using NXP Semiconductors products in order to
national authorities.
avoid a default of the applications and the products or of
the application or use by customer’s third party Quick reference data ⎯ The Quick reference data is an
customer(s). NXP does not accept any liability in this extract of the product data given in the Limiting values and
respect. Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings Non-automotive qualified products ⎯ Unless this data
System of IEC 60134) will cause permanent damage to sheet expressly states that this specific NXP
the device. Limiting values are stress ratings only and Semiconductors product is automotive qualified, the
(proper) operation of the device at these or any other product is not suitable for automotive use. It is neither
conditions above those given in the Recommended qualified nor tested in accordance with automotive testing
operating conditions section (if present) or the or application requirements. NXP Semiconductors accepts
Characteristics sections of this document is not warranted. no liability for inclusion and/or use of non-automotive
Constant or repeated exposure to limiting values will qualified products in automotive equipment or
permanently and irreversibly affect the quality and applications.
reliability of the device.
In the event that customer uses the product for design-in
Terms and conditions of commercial sale ⎯ NXP and use in automotive applications to automotive
Semiconductors products are sold subject to the general specifications and standards, customer (a) shall use the
terms and conditions of commercial sale, as published at product without NXP Semiconductors’ warranty of the
http://www.nxp.com/profile/terms, unless otherwise product for such automotive applications, use and
agreed in a valid written individual agreement. In case an specifications, and (b) whenever customer uses the
individual agreement is concluded only the terms and product for automotive applications beyond NXP
conditions of the respective agreement shall apply. NXP Semiconductors’ specifications such use shall be solely at
Semiconductors hereby expressly objects to applying the customer’s own risk, and (c) customer fully indemnifies
customer’s general terms and conditions with regard to the NXP Semiconductors for any liability, damages or failed
purchase of NXP Semiconductors products by customer. product claims resulting from customer design and use of
the product for automotive applications beyond NXP
No offer to sell or license ⎯ Nothing in this document
Semiconductors’ standard warranty and NXP
may be interpreted or construed as an offer to sell products
Semiconductors’ product specifications.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions
and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

© NXP B.V. 2011

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
Printed in The Netherlands