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    2N3055 PDF

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    Shafiq
    This document provides specifications for the 2N3055 silicon NPN Darlington transistor. It lists absolute maximum ratings, thermal characteristics, electrical characteristics, and mechanical dimensions. The 2N3055 is a TO-39 packaged transistor designed for general purpose switching and amplifier applications at currents up to 15A and voltages up to 60V. It has a typical current gain of 20-70 and saturation voltage of 1.1V or less.

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    2N3055 PDF

    Uploaded by

    Shafiq
    86 views3 pages
    This document provides specifications for the 2N3055 silicon NPN Darlington transistor. It lists absolute maximum ratings, thermal characteristics, electrical characteristics, and mechanical dimensions. The 2N3055 is a TO-39 packaged transistor designed for general purpose switching and amplifier applications at currents up to 15A and voltages up to 60V. It has a typical current gain of 20-70 and saturation voltage of 1.1V or less.

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    This document provides specifications for the 2N3055 silicon NPN Darlington transistor. It lists absolute maximum ratings, thermal characteristics, electrical characteristics, and mechanical dimensions. The 2N3055 is a TO-39 packaged transistor designed for general purpose switching and amplifier applications at currents up to 15A and voltages up to 60V. It has a typical current gain of 20-70 and saturation voltage of 1.1V or less.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    86 views3 pages

    2N3055 PDF

    Uploaded by

    Shafiq
    This document provides specifications for the 2N3055 silicon NPN Darlington transistor. It lists absolute maximum ratings, thermal characteristics, electrical characteristics, and mechanical dimensions. The 2N3055 is a TO-39 packaged transistor designed for general purpose switching and amplifier applications at currents up to 15A and voltages up to 60V. It has a typical current gain of 20-70 and saturation voltage of 1.1V or less.

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    2N3055

    NPN SILICON DARLINGTONS

    The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
    Designed for general purpose, moderate speed, switching and amplifier applications
    Compliance to RoHS.

    ABSOLUTE MAXIMUM RATINGS

    Symbol Ratings Value Unit

    VCBO Collector to Base Voltage 100 V


    VCEO #Collector-Emitter Voltage 60 V
    VCER Collector-Emitter Voltage 70 V
    VEBO Emitter-Base Voltage 7 V
    VCB Collector-Base Voltage 100 V
    VEB Emitter-Base Voltage 7 V
    IC Collector Current – Continuous 15 A
    IB Base Current – Continuous 7 A
    @ TC = 25° 115 W
    PD Total Device Dissipation
    Derate above 25° 0.657 W/°C
    TJ Junction Temperature 200 °C
    TS Storage Temperature -65 to +200 °C

    THERMAL CHARACTERISTICS

    Symbol Ratings Value Unit

    RthJC Thermal Resistance, Junction to Case 1.52 °C/W

    31/10/2012 COMSET SEMICONDUCTORS 1|3


    2N3055

    ELECTRICAL CHARACTERISTICS
    TC=25°C unless otherwise noted

    Symbol Ratings Test Condition(s) Min Typ Max Unit


    Collector-Emitter Sustaining Voltage
    VCEO(SUS) (*)
    IC=200 mA, IB=0 60 - - V
    Collector-Emitter Breakdown
    BVCER Voltage (*)
    IC=200 mA, RBE=100Ω 70 - - V

    ICEO Collector-Emitter Current CVE=30 V, IB=0 - - 0.7 MA

    ICEX Collector Cutoff Current VCE=100 V, VEB(off)=1.5 V - - 5.0 mA

    IEBO Emitter Cutoff Current VBE=7.0 V, IC=0 - - 5.0 mA

    hFE DC Current Gain IC=4.0 A, IB=4.0 Adc 20 - 70

    VCE(SAT) Collector-Emitter saturation Voltage IC=4.0 A, IB=0.4 2Adc - - 1.1 V

    VBE Base-Emitter Voltage IC=4.0 A, VCE=4.0 V - 1.8 - V


    VCE=4.0 V, IC=1.0 A
    hfe Small Signal Current Gain
    f=1.0 kHz
    15 - 120 -
    Small Signal Current Gain Cutoff VCE=4.0 V, IC=1.0 A
    fαe 10 - - kHz
    Frequency f=1.0 kHz
    IC=0.2 A, IB=0 A
    VCER(SUS) Collector-Emitter Sustaining Voltage 60 - - V
    RBE= 100Ω
    Second Breakdown Collector
    Is/b Current
    t=1 S (non repetitive) 1.95 - - A
    In accordance with JEDEC Registration Data
    (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

    31/10/2012 COMSET SEMICONDUCTORS 2|3


    2N3055

    MECHANICAL DATA CASE TO-3

    DIMENSIONS (mm)
    min max
    A 11 13.10
    B 0.97 1.15
    C 1.5 1.65
    D 8.32 8.92
    F 19 20
    G 10.70 11.1
    N 16.50 17.20
    P 25 26
    R 4 4.09
    U 38.50 39.30
    V 30 30.30

    Pin 1 : Base
    Pin 2 : Emitter
    Case : Collector

    Revised September 2012


             
    Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
    use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
    without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
    purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
    all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
    components in life support devices or systems.

     
    www.comsetsemi.com info@comsetsemi.com

    31/10/2012 COMSET SEMICONDUCTORS 3|3

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