NPN Epitaxial Silicon Transistor: NPN General Purpose Amplifier

2N4953
2N4953
NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 500mA.
• Sourced from Process 10.
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 1.0 A
TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
©2002 Fairchild Semiconductor Corporation Rev. B, July 2002

2N4953
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 30 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V
ICBO Collector Cut-off Current VCB = 40V, IE = 0 50 nA
IEBO Reverse Base Current VEB = 3.0V, IC = 0 50 nA
On Characteristics *
hFE DC Current Gain VCE = 10V, IC = 1.0mA 75
VCE = 10V, IC = 10mA 150
VCE = 10V, IC = 150mA 200 600
VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA 0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA 1.3 V
VBE(on) Base-Emitter On Voltage VCE = 10V, IC = 150mA 1.2 V
Small Signal Characteristics
Cob Output Capacitance VCB = 10V, f = 1.0MHz 8.0 pF
hfe Small-Signal Current Gain IC = 20mA, VCE = 10V, 2.5
f = 100MHz
ton Turn-On Time VCC = 30V, IC = 150mA, 40 ns
toff Turn-Off Time IB1 = IB2 = 15mA 400 ns
* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics TA=25°C unless otherwise noted

Symbol Parameter Max. Units
PD Total Device Dissipation 625 mW
Derate above 25°C 5.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W

2N4953
Package Dimensions
TO-92
+0.25
4.58 –0.15
4.58 ±0.20
0.46 ±0.10
14.47 ±0.40
+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]
3.60 ±0.20
3.86MAX
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
(R2.29)
Dimensions in Millimeters

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I

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2N4953

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

©2002 Fairchild Semiconductor Corporation Rev. B, July 2002

Thermal Characteristics TA=25°C unless otherwise noted

©2002 Fairchild Semiconductor Corporation Rev. B, July 2002

©2002 Fairchild Semiconductor Corporation Rev. B, July 2002

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

Datasheet Identification Product Status Definition

Preliminary First Production This datasheet contains preliminary data, and

Obsolete Not In Production This datasheet contains specifications on a product

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