Fuji Discrete Package IGBT n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)

Items Symbols Ratings Units
Collector-Emitter Voltage VCES 600 V
Gate -Emitter Voltage VGES ± 20 V
DC Tc= 25°C IC 25 82
Collector Current DC Tc=100°C IC 100 50 A
1ms Tc= 25°C IC PULSE 328
IGBT Max. Power Dissipation PC 310 W
FWD Max. Power Dissipation PC 140 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +150 °C
Mounting Screw Torque 70 Nm

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=600V 1.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 20 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=50mA 5.5 8.5
V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=50A 3.0
Input capacitance Cies VGE=0V 3000
Output capacitance Coes VCE=10V 650 pF
Reverse Transfer capacitance Cres f=1MHz 150
tON VCC=300V 1.2
Turn-on Time
tr IC=50A 0.6 µs
tOFF VGE=±15V 1.0
Turn-off Time
Switching Time tf RG=62Ω 0.35
tON VCC=300V 0.16
Turn-on Time
tr IC=50A 0.11
µs
tOFF VGE=+15V 0.30
Turn-off Time
tf RG=6Ω 0.35
Diode Forward On-Voltage VF IF=50A VGE=0V 3.0 V
Reverse Recovery Time trr IF=50A, VGE=-10V, di/dt=100A/µs 300 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.40
Thermal Resistance °C/W
Rth(j-c) Diode 0.89
 Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
120 120

V GE = 2 0 V , 1 5 V 1 2 V V GE = 2 0 V , 1 5 V 12V
100 100
[A]

[A]
80 80
C

C
Collector Current : I

Collector Current : I
60 60
10V
10V
40 40

20 20

8V
8V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage : V CE [V]

Collector-Emitter Voltage vs. Gate-Emitter Voltage Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
12 12
[V]

[V]

10 10
CE

CE

8 8
Collector-Emitter Voltage : V

Collector-Emitter Voltage : V

6 6

4 4 I C=
IC =
100A
100A
2 50A 2 50A
25A 25A

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V]

Switching Time vs. Collector Current Switching Time vs. Collector Current
V CC = 3 0 0 V , R G =6.2 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 3 0 0 V , R G =6.2 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C
1000 1000

t off
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]

tf
t off

tf t on
100 100
on
on

t on
Switching Time : t

Switching Time : t

tr

tr

10 10
0 20 40 60 80 0 20 40 60 80

Collector Current : I C [A] Collector Current : I C [A]

 Switching Time vs. R G Switching Time vs. R G
V CC =300V, I C = 5 0 A , V GE = ± 1 5 V , T j= 2 5 ° C V CC =300V, I C = 5 0 A , V GE = ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]
t on
1000 1000
t off t off

tf
on

on
tr
Switching Time : t

Switching Time : t
tf t on

100 100 tr

10 10
0 50 100 0 50 100

Gate Resistance : R G [ Ω ] Gate Resistance : R G [ Ω ]

Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics

T j= 2 5 ° C T j= 2 5 ° C
10 500 25

V C C =200V, 300V, 400V

C ies
[V]

400 20
, C res , C ies [nF]

[V]
CE

GE
1
Collector-Emitter Voltage : V

Gate-Emitter Voltage : V
300 15

C oes
oes
Capacitance : C

200 10
0,1 C res

100 5

0,01 0 0
0 5 10 15 20 25 30 35 0 50 100 150 200 250 300
Gate Charge : QG [nQ]
Collector-Emitter Voltage : V CE [V]

Reverse Recovery Time vs. Forward Current Reverse Recovery Current vs. Forward Current
-di -di
V R= 2 0 0 V , / dt = 1 0 0 A / µ s e c V R= 2 0 0 V , / dt = 1 0 0 A / µ s e c
400 15
[nsec]

[A]

300 125°C
rr

125°C
rr

Reverse Recovery Current : I

10
Reverse Recovery Time : t

200

25°C
25°C 5

100

0 0
0 20 40 60 80 100 0 20 40 60 80 100

Forward Current : I F [A] Forward Current : I F [A]

 Reverse Biased Safe Operating Area Typical Short Circuit Capability
+ V GE = 1 5 V , - V GE< 15V, T j< 1 2 5 ° C , R G > 6.2 Ω V CC = 4 0 0 V , R G=6.2 Ω , T j= 1 2 5 ° C
120 600 60

t SC I SC
100 500 50

[A]

[µs]
[A]

SC
80 400 40
C

SC
Short Circuit Current : I
Collector Current : I

Short Circuit Time : t

60 300 30

40 200 20

20 100 10

0 0 0
0 100 200 300 400 500 600 700 5 10 15 20 25
Gate Voltage : V GE [V]
Collector-Emitter Voltage : V CE [V]

-di
Reverse Recovery Characteristics vs. / dt
Forward Voltage vs. Forward Current
I F = 5 0 A , T j= 1 2 5 ° C
120 500 25

T j= 1 2 5 ° C 2 5 ° C
100 I rr
[nsec]

400 20

[A] rr
[A]

rr

80

Reverse Recovery Current : I

Reverse Recovery Time : t
F

300 15
Forward Current : I

60

200 10
40
t rr

100 5
20

0 0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 0 100 200 300 400 500
-di
Forward Voltage : V F [V] / dt [A/µsec]

Transient Thermal Resistance

Thermal Resistance : Rth(j-c) [°C/W]

0
FWD
10

IGBT

-1
10

-2
10
-4 -3 -2 -1 0
10 10 10 10 10

P u l s e W i d t h : P W [sec]
 Switching losses
(Eon, Eoff vs. IC)

IC [A]

Test Circuit Switching waveforms

P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com