P0903BD

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 9mΩ @VGS = 10V 57A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
TC= 25 °C 57
Continuous Drain Current ID
TC= 100 °C 36
1
A
Pulsed Drain Current IDM 160
Avalanche Current IAS 34
Avalanche Energy L=0.1mH EAS 60 mJ
TC= 25 °C 49
Power Dissipation PD W
TC= 100°C 19
Junction & Storage Temperature Range Tj, Tstg -55 to 150
°C
Lead Temperature(1/16” from case for 10 sec) TL 275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 2.55
°C / W
Junction-to-Ambient RqJA 63
1
Pulse width limited by maximum junction temperature.

REV 1.0 1 2014/5/7

P0903BD
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.5 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS =24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS =20V, VGS = 0V, TJ = 125°C 10
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 160 A
Drain-Source On-State VGS =4.5V, ID =30A 11 13
RDS(ON) mΩ
Resistance1 VGS =10V, ID =30A 7 9
Forward Transconductance1 gfs VDS =15V, ID =17A 60 S
DYNAMIC
Input Capacitance Ciss 1060
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 281 pF
Reverse Transfer Capacitance Crss 175
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.41 Ω
Total Gate Charge2 Qg 23
2
VDS = 0.5V(BR)DSS, VGS = 10V,
Gate-Source Charge Qgs 4.4 nC
ID = 30A
2 Qgd
Gate-Drain Charge 5.5
2 td(on)
Turn-On Delay Time 16
2 VDS = 15V ,RL = 15Ω
Rise Time tr 25
2
ID≌1A, VGS = 10V, RGEN =6Ω nS
Turn-Off Delay Time td(off) 60
Fall Time2 tf 16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 32 A
1 VSD IF = IS, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr IF = 3A, dlF/dt = 100A /ms 40 70 nS
Reverse Recovery Charge Qrr 28 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.0 2 2014/5/7

P0903BD
N-Channel Enhancement Mode MOSFET

REV 1.0 3 2014/5/7

P0903BD
N-Channel Enhancement Mode MOSFET

REV 1.0 4 2014/5/7

P0903BD
N-Channel Enhancement Mode MOSFET

*因为各家封装模具不同而外观略有所差异，不影响电性及Layout。

REV 1.0 5 2014/5/7