P0903BDG

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

25V 9.5mΩ @VGS = 10V 56A

TO-252

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 25
V
Gate-Source Voltage VGS ±20
TC= 25 °C 56
Continuous Drain Current ID
TC= 100 °C 35
1
A
Pulsed Drain Current IDM 160
Avalanche Current IAS 34
Avalanche Energy L=0.1mH EAS 60 mJ
TC= 25 °C 49
Power Dissipation PD W
TC= 100°C 20
Junction & Storage Temperature Range Tj, Tstg -55 to 150
°C
Lead Temperature (1/16” from case for 10 sec.) TL 275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 2.55
°C / W
Junction-to-Ambient RqJA 63
1
Pulse width limited by maximum junction temperature.

REV 1.0 1 2014/5/7

P0903BDG
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 25
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.6 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA
VDS =20V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS =20V, VGS = 0V, TJ = 125°C 10
Drain-Source On-State VGS =5V, ID =20A 12 19
RDS(ON) mΩ
Resistance1 VGS =10V, ID =25A 7 9.5
Forward Transconductance1 gfs VDS =15V, ID =20A 60 S
DYNAMIC
Input Capacitance Ciss 1400
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 300 pF
Reverse Transfer Capacitance Crss 190
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.3 Ω
VGS = 10V 25
Total Gate Charge2 Qg
VGS = 4.5V VDS =0.5V(BR)DSS, 11
nC
Gate-Source Charge 2 Qgs ID = 25A 6
Gate-Drain Charge2 Qgd 5
2 td(on)
Turn-On Delay Time 16
2 VDS = 15V ,RL=15Ω
Rise Time tr 25
2
ID≌1A, VGS = 10V, RGEN =6Ω nS
Turn-Off Delay Time td(off) 60
Fall Time2 tf 16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current IS 37 A
1 VSD IF =IS, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr IF =25A, dlF/dt = 100A /mS 35 nS
Reverse Recovery Charge Qrr 61 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.0 2 2014/5/7

P0903BDG
N-Channel Enhancement Mode MOSFET

REV 1.0 3 2014/5/7

P0903BDG
N-Channel Enhancement Mode MOSFET

REV 1.0 4 2014/5/7

P0903BDG
N-Channel Enhancement Mode MOSFET

*因为各家封装模具不同而外观略有所差异，不影响电性及Layout。

REV 1.0 5 2014/5/7