6.electronics GATE

fiziks
Institute for NET/JRF, GATE, IIT‐JAM, M.Sc. Entrance, JEST, TIFR and GRE in Physics

ELECTRONICS SOLUTIONS
GATE-2010
Q1. The voltage resolution of a 12-bit digital to analog converter (DAC), whose output varies
from  10 V to  10 V is, approximately
(a) 1 mV (b) 5 mV (c) 20 mV (d) 100 mV
Ans: (b)
20V
Solution: Voltage resolution=  4.8 mV
212  1
Q2. The figure shows a constant current source charging a capacitor that is initially uncharged.
Vout
If the switch is closed at t = 0, which of the following plots depicts correctly the output
voltage of the circuit as a function of time?
(a) (b)
Vout Vout
t t
(c) (d)
Vout Vout
t t
Ans: (d)
CdV0 I
Solution: I 0   V0  0 t
dt C
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Q3. In one of the following circuits, negative feedback does not operate for a negative input.
Which one is it? The opamps are running from ± 15 V supplies.
(a) (b)
 
 
(c) (d)
 
 
Ans: (c)
Q4. For any set of inputs, A and B, the following circuits give the same output, Q, except one.
Which one is it?
(a)  (b) 
Q
 Q 
(c)  (d) 
Q
 Q 
Ans. : (d)
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GATE-2011
Q5. Which of the following statements is CORRECT for a common emitter amplifier circuit?
(a) The output is taken from the emitter
(b) There is 180o phase shift between input and output voltages
(c) There is no phase shift between input and output voltages
(d) Both p-n junctions are forward biased
Ans: (b)
Q6. For an intrinsic semiconductor, me* and mh* are respectively the effective masses of
electrons and holes near the corresponding band edges. At a finite temperature the
position of the Fermi level
(a) depends on me* but not on mh* (b) depends on mh* but not on me*
(c) depends on both me* and mh* (d) depends neither on me* nor on mh*
Ans: (c)
Q7. In the following circuit, the voltage across and the current through the 2 kΩ resistance are
500 1k
20V 10V
2k
30V
(a) 20 V, 10 mA (b) 20 V, 5 mA (c) 10 V, 10 mA (d) 10 V, 5 mA

Ans: (d)
Q8. In the following circuit, Tr1 and Tr2 are identical transistors having VBE = 0.7 V. The
current passing through the transistor Tr2 is
100
Tr2
5V
Tr1
(a) 57 mA (b) 50 mA (c) 48 mA (d) 43 mA
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Ans: (d)
5  0.7
Solution: Current through 100 , I   43 mA
100
I  I C  2 I B  I C  43 mA .
Q9. Consider the following circuit 1k 4k
 10V

 Vout
Vin
 10V
Which of the following correctly represents the output Vout corresponding to the input Vin?
 5V  5V
(a) (b)
 2V  2V
Vin Vin
 2V time  2V time
 5V  5V
 10V
 10V Vout
Vout time
- 10V
time
- 10V
 5V  5V
(c) (d)
 2V  2V
Vin Vin
 2V time  2V time
 5V  5V
 10V
 10V Vout
Vout time
- 10V
time
- 10V
Ans: (a)
 1   1 
Solution: Vut     10  2V , Vlt     10  2V .
1 4  1 4 
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Q10. The following Boolean expression
Y  A  B  C  D  A  B  C  D  A  B  C  D  A  B  C  D  A  B  C  D  A  B  C  D can
be simplified to
(a) A  B  C  A  D (b) A  B  C  A  D
(c) A  B  C  A  D (d) A  B  C  A  D
Ans: (c)
CD CD CD CD
AD
AB 1 1
AB 1 1
AB
AB 1 1
AB C
GATE-2012
Q11. If the peak output voltage of a full wave rectifier is 10 V, its d.c. voltage is
(a) 10.0 V (b) 7.07 V (c) 6.36 V (d) 3.18 V
Ans: (c)
2Vm 2  10 14  10 70
Solution: Vdc      6.36V
 22 / 7 22 11
Q12. A Ge semiconductor is doped with acceptor impurity concentration of 1015 atoms/cm3.
For the given hole mobility of 1800 cm2/V-s, the resistivity of the material is
(a) 0.288 Ω cm (b) 0.694 Ω cm (c) 3.472 Ω cm (d) 6.944 Ω cm
Ans: (c)
1 1 1
Solution:     15  3.47 cm
 N A e u h 10  1.6  10 19  1800
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Q13. Identify the CORRECT energy band diagram for silcon doped with Arsenic. Here CB,
VB, ED and EF are conduction band, valence band, impurity level and Fermi level,
respectively.
(a) (b)
CB CB
ED
ED
EF
EF
VB VB
(c) (d)
CB CB
EF EF
ED ED
VB VB
Ans: (b)
Solution: N-type material ( Si doped with AS ).
Q14. In the following circuit, for the output voltage to be V0   V1  V2 / 2  the ratio R1/R2 is
(a) 1/2 R
(b) 1
 VCC
(c) 2 R
V1 
(d) 3
Vo
Ans: (d) 
V2
R1
Solution: When V2  0, v 01  V1 - VCC
R2
 R   R2 
when V1  0, v02  1     V2
 R   R1  R2 
V2 R2 1 R
Since V0  V1   2   1 3
2 R1  R2 2 R2
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Q15. Consider the following OP-AMP circuit.  10V
Which one of the following correctly represents the output Vout
Vin 
corresponding to the input Vin?
5V Vout

4k
- 10V
1k
(a)  5V (b)  5V
Vin Vin
 1V  1V
0V t 0V t
 10V  10V
Vout Vout
t t
 10V  10V
 5V  5V
(c) Vin (d) Vin
0V t 0V t
 10V  10V
Vout Vout
t t
 10V  10V
Ans: (a)
 1 
Solution: Voltage at inverting input V2     5  1V .
1 4 
When vin  1V , v 0  VCC and when vin  1V , v0  VCC
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Q16. Consider the following circuit in which the current gain βdc of the transistor is 100.
 15 V
100 k 900 
100 
Which one of the following correctly represents the load line (collector current IC with
respect to collector-emitter voltage VCE) and Q-point of this circuit?
15 mA Q - point 13 mA Q - point
(a) (2 V, 13 mA) (b) (2 V, 10 mA)
IC →
IC →
VCE  15 V VCE  15 V
15 mA 13 mA
(c) (d)
Q - point Q - point
(7.5 V, 7.5 mA) (7.5 V, 6.5 mA)
IC →
IC →
VCE  15 V VCE  15 V
Ans: (a)
VCC  V BE 15  0.7 14.3
Solution: I B    mA.
RB  RE 100  10  100 100
3
I C  I B  14.3mA  13mA , VCE  VCC  I C RC  RE   15  900  100  13  10 3  2V .
VCC 15
I C , Sat    15 mA.
R C  R E 1000
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Q17. In the following circuit, the voltage drop across the ideal diode in forward bias condition
is 0.7V. The current passing through the diode is
(a) 0.5 mA
12k
(b) 1.0 mA
 24 Volt
(c) 1.5 mA

(d) 2.0 mA
6k 3.3 k
Ans: (b)
Solution: Let current through 12k is I and through diode is I D
Then 0 .7  I D  3 .3   I  I D   6 (1)
and  24  I  12  I  I D   6  0 (2)
From (1) and (2) I D  1mA.
GATE-2013
Q18. What should be the clock frequency of a 6  bit A / D converter so that its maximum
conserved time is 32s ?
(a) 1 MHz (b) 2 MHz (c) 0.5 MHz (d) 4 MHz
Ans: (c)
Q19. A phosphorous doped silicon semiconductor (doping density: 1017/cm3) is heated from
100C to 200C. Which one of the following statements is CORRECT?
(a) Position of Fermi level moves towards conduction band
(b) Position of dopant level moves towards conduction band
(c) Position of Fermi level moves towards middle of energy gap
(d) Position of dopant level moves towards middle of energy gap
Ans: (c)
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Statement for Linked Answer Questions 20 and 21:
Consider the following circuit
Q20. For this circuit the frequency above which the gain will decrease by 20 dB per decade is
(a) 15.9 kHz (b) 1.2kHz 10 k 
Vin  
(c) 5.6 kHz (d) 22.5 kHz Vout 
1000pF 
Ans: (a)
1 1 k
Solution: f H   16kHz
2RC
2 k
Q21. At 1.2 kHz the closed loop gain is
(a) 1 (b) 1.5 (c) 3 (d) 0.5
1  R F 
v0  R1 

Ans: (b)   1 .5
v in 2
1   f 

 fH 
GATE-2014
Q22. The input given to an ideal OP-AMP integrator circuit is
V
V0
t
t0
The correct output of the integrator circuit is
(a) V (b) V
V0 V0
t0 t t0 t
(c) V (d) V
V0
V0
t0 t
t0 t
Ans: (a)
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Q23. The minimum number of flip-flops required to construct a mod-75 counter is
__________
Ans: 7
Q24. The donor concentration in a sample of n -type silicon is increased by a factor of 100.
The shift in the position of the Fermi level at 300K, assuming the sample to non
degenerate is ________ meV . k BT  25meV at 300 K 
Ans: 115.15
N   Nc   Nc 
Solution: EC  EF  kT ln  c  and EC  EF  kT ln    kT ln    kT ln 100 
 Nd   100 N d   Nd 
Thus shift is E  kT ln 100   25ln 100  meV  115.15 meV
Q25. The current gain of the transistor in the following circuit is  dc  100 . The value of
collector current I C is_________ mA 12V
3k  20  F
V0
150 k 
Vi
20  F
3k 
Ans: 1.6
VCC  VBE 12  0
Solution: I B    0.016 mA  I C   I B  1.6 mA
RB    RC  RE  150  100  3  3
Q26. In order to measure a maximum of 1V with a resolution of 1mV using a n  bit

A
converter working under the principle of ladder network the minimum value of n
D
is________
Ans: 10
1
Solution: 1103   n  10
2 1
n
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Q27. A low pass filter is formed by a resistance R and a capacitance C . At the cut-off angular
1
frequency C  the voltage gain and the phase of the output voltage relative to the
RC
input voltage respectively are
(a) 0.71and 45 o (b) 0.71and  45 o (c) 0.5 and  90 o (d) 0.5 and 90 o
Ans: (b)
v0 XC 1 1
Solution:   
 1 1  jCR
vin R  X C R
XC
1 v 1 1 1  j 450
At   C   0    e
RC vin 1 j 2e j 450
2
GATE-2015
Q28. The band gap of an intrinsic semiconductor is E g  0.72 eV and mh*  6mn* . At 300 K , the
Fermi level with respect to the edge of the valence band (in eV ) is at _______(upto three
decimal places) k B  1.38  10 23 JK 1
Ans.: 0.395
Ec  E 3  m* 
Solution: Ei   kT ln  h* 
2 4  mn 
  Ei  Ev  / kT  Ei  Ev  / kT N c  Eg / 2 kT N v Eg / 2 kT
 e i v  
 Eg / 2 kT E  E / kT
ni  NV e  Nc Nv e e  e e
Nv Nc
3
Ei  Ev  N v  Eg  mh*  4 Eg 3 E
 ln     ln  *    Ei  Ev  kT ln  6   g
kT  N c  2kT  me  2kT 4 2
3 0.72
 Ei  Ev   0.026 1.7917   0.3949eV  0.395 eV
4 2
Q29. Which one of the following DOES NOT represent an exclusive OR operation for inputs
A and B ?
(a)  A  B AB (b) AB  BA (c)  A  B A  B  (d)  A  B AB
Ans.: (d)
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Solution: (a) ( A  B) AB  ( A  B)( A  B)  AB  AB
(b) AB  AB
(c) AB  AB
(d)  A  B  AB  AB
Q30. Consider the circuit shown in the figure, where RC  1 . For an input signal Vi shown
below, choose the correct V0 from the options:

R
Vi
C
Vi 
V0 1

R
1 2 3 t
V0 V0
(a) (b)
1 1
1 2 3 t 1 2 3 t
1 1
(c) V0 (d) V
0
0 .1
1
1 2 3 t
 0 .1 3 t
1 2
Ans.: (b)
dvi 0  v0 dv dv
Solution: C   v0   RC in   in  vin  v0t
dt R dt dt
vin  t  v0  1V and vin  t  v0  1V
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Q31. In the simple current source shown in the figure, Q1 and Q2 are identical transistors with
current gain   100 and VBE  0.7 V Vice  30 V
5 k I0
Q1 Q2
The current I 0 in mA is __________ (upto two decimal places)

Ans.: 5.86
30  0.7 29.3
Solution: VCC  I C RC  VBE  0 , I C    5.86 mA
5 5
Q32. In the given circuit, if the open loop gain A  10 5 the feedback configurations and the
closed loop gain A f are Vi 
V0

9 k
1 k RL
(a) series-shunt, A f  9 (b) series-series, A f  10
(c) series-shunt, A f  10 (d) shunt-shunt, A f  10
Ans.: (c)
 R 
Solution: AF  1  F   1  9   10.
 R1 
Q33. In the given circuit, the voltage across the source resistor is1 V . The drain voltage (in V )
is ___________ 25V
5k 
2 M
500 
Ans.: 15
1 1
Solution: VS  I D RS  I D  A  VD  VDD  I D RD  25   5000  VD  15V
500 500
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GATE-2016
Q34. The number density of electrons in the conduction band of a semiconductor at a given
temperature is 2  1019 m 3 . Upon lightly doping this semiconductor with donor
impurities, the number density of conduction electrons at the same temperature
becomes 4  10 20 m 3 . The ratio of majority to minority charge carrier concentration
is________.
Ans : 400
Solution: Intrinsic carrier concentration is ni  2 1019 m 3
Majority carrier concentration is n  4 1020 m 3
ni2  2  10 
19 2
Minority carrier concentration is p    1018 m 3

n 4  10 20
n 4  1020
The ratio of majority to minority charge carrier concentration is   400
p 1018
Q35. For the digital circuit given below, the output X is
X
B
C
(a) A  B.C (b) A . B  C  (c) A . B  C  (d) A  B.C 

Ans.: (b)
Q36. For the transistor shown in the figure, assume V BE  0.7V and  dc  100 . If Vin  5V , Vout
(in Volts) is _________. (Give your answer upto one decimal place)
10V
3 k
Vin Vout
200 k 
1k 
Ans.: 5.7
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V V 5  0.7 4.3
Solution: I B  in BE   mA , I C   I B  1.433 mA
RB   RE 200  100 300
Vout  VCC  I C RC  Vout  10  1.433  3  5.7 V
GATE-2017
Q37. The best resolution that a 7 bit A/D convertor with 5V full scale can achieve
is…………… mV . (up to two decimal places)
Ans. : 39.37
5
Solution: Resolution   39.37 mV
2 1
7
Q38. In the figure given below, the input to the primary of the transformer is a voltage varying
sinusoidally with time. The resistor R is connected to the centre tap of the secondary.
Which one of the following plots represents the voltage across the resistor R as a
function of time?
V V
(a) 0 (b) 0
t t
(c) V (d) V
0 0
t t
Ans. : (a)
Solution:
Full wave rectifier with RC filter.
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Q39. The minimum number of NAND gates required to construct an OR gate is:
(a) 2 (b) 4 (c) 5 (d) 3
Ans. : (d)
Q40. For the transistor amplifier circuit shown below with R1  10 k , R2  10 k , R3  1 k  ,
and   99 . Neglecting the emitter diode resistance, the input impedance of the amplifier
looking into the base for small ac signal is…………. k  . (up to two decimal places)
VCC
R1
C
Vin B
E Vout
R2 R3
Ans. : 4.75
Solution: Z i  Z b  R where Z b   R3  99k  and R  R1  R2  5k 
 Z i  Z b  R  4.75k 
Q41. Consider an ideal operational amplifier as shown in the figure below with
R1  5 k , R2  1 k , RL  100 k  . For an applied input voltage V  10 mV , the current
passing through R2 is……………..  A . (up to two decimal places)


R1
V
RL
R2
Ans. : 10.0
V 10
Solution: I 2    10 A
R2 1
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GATE – 2018
Q42. The logic expression ABC  ABC  ABC  ABC can be simplified to
(a) A XOR C (b) A AND C (c) 0 (d) 1
Ans. : (a)
Solution: Y  ABC  ABC  ABC  ABC  AC  B  B   AC  B  B 
 Y  AC  AC  A XOR C
Q43. In a 2-to-1 multiplexer as shown below, the output X  A0 if C  0 and X  A1 if C  1 .
Which one of the following is the correct implementation of this multiplexer?
A0 A0
(a) C (b) C
X X
A1 A1
A0 A0
(c) C X (d) C X
A1 A1
Ans. : (a)
Solution: Check option (a),
X  A0C  A1C
If C  0  X  A0
If C  1  X  A1
Q44. For an operational amplifier (ideal) circuit shown below,
4k 
2k  10V
V1 
H.No. 40-D, Ground Floor, Jia Sarai, Near IIT, Hauz Khas, New Delhi-110016 V0
V2
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RL
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If V1  1V and V2  2V , the value of V0 is __________ V (up to one decimal place).
Ans. : 3.6
4 4
Solution: V0  V01  V02   1V   2 V
2 5
V0  2  1.6  3.6V
Q45. A p - doped semiconductor slab carries a current I  100 mA in a magnetic field

B  0.2 T as shown. One measures Vy  0.25 mV and Vx  2 mV . The mobility of holes
in the semiconductor is___________ m 2V 1s 1 (up to two decimal places)
B x
Vy y t  1mm
I z
w  4mm
l  10mm
Vx
Ans. : 1.55
Q46. An n - channel FET having Gate-Source switch-off voltage VGS  OFF  2 V is used to
invert a 0  5V square-wave signal as shown. The maximum allowed value of R would

be _________ k  (up to two decimal places). 5V
5k 
Vout
5V
5V Vin R
0V
0V
1k  100
12V
Ans. : 0.70
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GATE-2019
Q47. For the following circuit, what is the magnitude of Vout if Vin  1.5V ?
100 R
R 15V
Vin 
Vout

15V
(a) 0.015V (b) 0.15V (c) 15V (d) 150V

Ans. : (c)
100 R
Solution: Vout   1.5  150 V  V0  15V
R
Q48. Consider the following Boolean expression:
 A  B   A  B  C   A  B  C 
It can be represented by a single three-input logic gate. Identify the gate
(a) AND (b) OR (c) XOR (d) NAND
Ans. : (d)
Solution: Y   A  B   A  B  C    A  B  C 
 
Y   A  B   A   B  C    AB  AC
 
  A  B   A  BC   AB  AC
 A  ABC  AB  BC  AB  AC
 A  ABC  BC  AB  AB  AC
 A  BC  B  AC  A  B  AC
 
  A  AC   B  A  AC  B  A  C  B
Y  ABC
Q49. A 3 - bit analog-to-digital converter is designed to digitize analog signals ranging from
0V to 10V . For this converter, the binary output corresponding to an input of 6 V is
(a) 011 (b) 101 (c) 100 (d) 010
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Ans. : (c)
Solution: 0   0 0 0   0V
10
1   0 01   1.42 V
7
20
2   010    2.8V
7
30
3   011   4.28V
7
40
4  10 0    5.71V
7
50
5  101   7.14V
7
60
6  110    8.57 V
7
70
7  111   10V
7
Q50. For the following circuit, the correct logic values for the entries X 2 and Y2 in the truth
table are
C
G A B P C X Y
A X 1 0 1 0 0 0 1
0 0 0 1 0 X2 Y2
G
Y 1 0 0 0 1 0 1
B
(a) 1 and 0 (b) 0 and 0 (c) 0 and 1 (d) 1 and 1

Ans. : (a)
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(a) 20 V, 10 mA (b) 20 V, 5 mA (c) 10 V, 10 mA (d) 10 V, 5 mA

(a) 57 mA (b) 50 mA (c) 48 mA (d) 43 mA

I C  I B  14.3mA  13mA , VCE  VCC  I C RC  RE   15  900  100  13  10 3  2V .

collector current I C is_________ mA 12V

Q26. In order to measure a maximum of 1V with a resolution of 1mV using a n  bit

below, choose the correct V0 from the options:

The current I 0 in mA is __________ (upto two decimal places)

(a) series-shunt, A f  9 (b) series-series, A f  10

(c) series-shunt, A f  10 (d) shunt-shunt, A f  10

Minority carrier concentration is p    1018 m 3

(a) A  B.C (b) A . B  C  (c) A . B  C  (d) A  B.C 

Vout  VCC  I C RC  Vout  10  1.433  3  5.7 V

passing through R2 is……………..  A . (up to two decimal places)

Which one of the following is the correct implementation of this multiplexer?

If V1  1V and V2  2V , the value of V0 is __________ V (up to one decimal place).

Q45. A p - doped semiconductor slab carries a current I  100 mA in a magnetic field

in the semiconductor is___________ m 2V 1s 1 (up to two decimal places)

invert a 0  5V square-wave signal as shown. The maximum allowed value of R would

(a) 0.015V (b) 0.15V (c) 15V (d) 150V

(a) 1 and 0 (b) 0 and 0 (c) 0 and 1 (d) 1 and 1

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