BYV37, BYV38

Vishay Semiconductors

Fast Avalanche Sinterglass Diode

FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
949539 definition

MECHANICAL DATA APPLICATIONS

Case: SOD-57 • Fast “soft recovery” rectification diode
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg

PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV37 VR = 800 V; IFAV = 2 A SOD-57
BYV38 VR = 1000 V; IFAV = 2 A SOD-57

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
BYV37 VR = VRRM 800 V
Reverse voltage See electrical characteristics
BYV38 VR = VRRM 1000 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Average forward current IFAV 2 A
Non repetitive reverse avalanche
I(BR)R = 0.4 A ER 10 mJ
energy
Junction and storage temperature
Tj = Tstg - 55 to + 175 °C
range

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Lead length l = 10 mm, TL = constant RthJA 45 K/W
Junction ambient
On PC board with spacing 25 mm RthJA 100 K/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A VF - 1 1.1 V
VR = VRRM IR - - 5 μA
Reverse current
VR = VRRM, Tj = 150 °C IR - - 150 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 300 ns
Diode capacitance VR = 4 V, f = 1 MHz CD - 15 - pF

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86045
128 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 31-Mar-10
 BYV37, BYV38
Fast Avalanche Sinterglass Diode Vishay Semiconductors

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

120 10
RthJA - Ther. Resist. Junction/Ambient (K/W)

100

IF - Forward Current (A)

Tj = 175 °C
1
80
Tj = 25 °C
60 0.1
l l

40
0.01
20

TL = constant
0 0.001
0 5 10 15 20 25 30 0 0.4 0.8 1.2 1.6 2.0
949552 l - Lead Length (mm) 16343 VF - Forward Voltage (V)

Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 4 - Forward Current vs. Forward Voltage

500 2.5
PR - Reverse Power Dissipation (mW)

VR = VRRM

IFAV - Average Forward Current (A)

450 VR = VRRM
half sinewave
400 2.0

350 RthJA ≤ 45 K/W

300 RthJA = 45 K/W 1.5 I = 10 mm

250 100 K/W

200 1.0
160 K/W
150
RthJA ≤ 100 K/W
100 BYV38 0.5 PCB: d = 25 mm
50 BYV37
0 0
25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180
15774 Tj - Junction Temperature (°C) 16344 Tamb - Ambient Temperature (°C)

Fig. 2 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 5 - Max. Average Forward Current vs. Ambient Temperature

1000 35
VR = VRRM f = 1 MHz
30
CD - Diode Capacitance (pF)
IR - Reverse Current (A)

25
100
20

15
10
10

1 0
25 50 75 100 125 150 175 0.1 1 10 100
15775 Tj - Junction Temperature (°C) 15776 VR - Reverse Voltage (V)

Fig. 3 - Max. Reverse Current vs. Junction Temperature Fig. 6 - Typ. Diode Capacitance vs. Reverse Voltage

Document Number: 86045 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 31-Mar-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 129
BYV37, BYV38
Vishay Semiconductors Fast Avalanche Sinterglass Diode

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

0.82 (0.032) max.

3.6 (0.142) max.

26 (1.024) min. 4 (0.157) max. 26 (1.024) min.

20543

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86045
130 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 31-Mar-10
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Revision: 11-Mar-11 1