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    Department of Physics and Astrophysics University of Delhi: I 15 3/2 E /2KT 3 G o o

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    Amalendu Pramanick
    This tutorial sheet provides physics problems related to solid state physics and semiconductor materials. It includes 6 questions about topics such as: 1) How conductivity varies with temperature in intrinsic semiconductors and metals. 2) Calculating the density of electron-hole pairs in germanium at different temperatures. 3) Finding the concentration of electrons in the conduction band of silicon at different temperatures. 4) Calculating the mean free time of electron scattering in silicon. 5) Determining electron energy and maximum wave number due to thermal energy. 6) Calculating the Hall coefficient and mobility of carriers in sodium and indium antimonide. 7) Explaining how the

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    Department of Physics and Astrophysics University of Delhi: I 15 3/2 E /2KT 3 G o o

    Uploaded by

    Amalendu Pramanick
    43 views2 pages
    This tutorial sheet provides physics problems related to solid state physics and semiconductor materials. It includes 6 questions about topics such as: 1) How conductivity varies with temperature in intrinsic semiconductors and metals. 2) Calculating the density of electron-hole pairs in germanium at different temperatures. 3) Finding the concentration of electrons in the conduction band of silicon at different temperatures. 4) Calculating the mean free time of electron scattering in silicon. 5) Determining electron energy and maximum wave number due to thermal energy. 6) Calculating the Hall coefficient and mobility of carriers in sodium and indium antimonide. 7) Explaining how the

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    SolidState6

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    This tutorial sheet provides physics problems related to solid state physics and semiconductor materials. It includes 6 questions about topics such as: 1) How conductivity varies with temperature in intrinsic semiconductors and metals. 2) Calculating the density of electron-hole pairs in germanium at different temperatures. 3) Finding the concentration of electrons in the conduction band of silicon at different temperatures. 4) Calculating the mean free time of electron scattering in silicon. 5) Determining electron energy and maximum wave number due to thermal energy. 6) Calculating the Hall coefficient and mobility of carriers in sodium and indium antimonide. 7) Explaining how the

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    43 views2 pages

    Department of Physics and Astrophysics University of Delhi: I 15 3/2 E /2KT 3 G o o

    Uploaded by

    Amalendu Pramanick
    This tutorial sheet provides physics problems related to solid state physics and semiconductor materials. It includes 6 questions about topics such as: 1) How conductivity varies with temperature in intrinsic semiconductors and metals. 2) Calculating the density of electron-hole pairs in germanium at different temperatures. 3) Finding the concentration of electrons in the conduction band of silicon at different temperatures. 4) Calculating the mean free time of electron scattering in silicon. 5) Determining electron energy and maximum wave number due to thermal energy. 6) Calculating the Hall coefficient and mobility of carriers in sodium and indium antimonide. 7) Explaining how the

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Department of Physics and Astrophysics

    University of Delhi

    Tutorial sheet 6: Solid State Physics, PH-CT 409, M.Sc./II Sem, 10.4.2020

    1. Explain how conductivity varies in an intrinsic semiconductor and in a metallic conductor


    with increasing temperature. Explain quantitatively the difference in conductivity between
    intrinsic and extrinsic semiconductors.

    2. The number of electron-hole pairs in intrinsic germanium (Ge) is given by ni = 9.7 ×


    1015 T 3/2 E −Eg /2KT cm3 (Eg = 0.72 eV). What is the density of pairs at T = 20o C? Explain
    if undoped Ge will be a good conductor at 200o C.

    3. Band gap of Si depends on temperature as


    T2
    Eg = 1.17eV − 4.73 × 10−4
    T + 636
    . Find the concentration of electrons in the conduction band of intrinsic Si at T = 77K, if
    at 300K we have ni = 1.05 × 1010 cm−3 .

    4. Electron mobility in Si is 1400 cm2 V −1 s−1 . Calculate the mean free time in scattering of
    electrons. The effective mass is m∗e /m0 = 0.33.

    5. Suppose the conduction band bottom is at k = 0, and an electron moves with a wave-
    number k = 109 /m.

    (a) Find the energy of this electron as measured from the bottom of the conduction band
    given that the effective mass of electrons in the conduction band is 0.3me .
    (b) Electrons in the conduction band will occupy some states up until about kB T above
    the bottom of the conduction band. Determine the maximum k that electrons would
    have due to thermal energy at room temperature? Also can you think its consequences
    in case of a light emitting diode?

    6. Considering Na as a BCC structure of unit cell size 0.5400 nm, calculate the Hall coefficient
    based on a free electron model. Next, determine the Hall mobility of a specimen when both
    types of carriers (electrons and holes) are present (this is Question 3, Chapter 8 of Kittel).
    Determine the Hall coefficient for InSb (band gap = 0.15 eV , me = 0.014 m, mp = 0.18
    m, where m is the free electron mass)..

    1
    7. What happens to the Fermi level in a semiconductor with increase in dopant concentration
    ? What is the effect of temperature on it ? Give valid reasons.

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