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    Adama Science and Technology University School of Applied Natural Sciences Department of Applied Physics Electronics Device Assignment I (30%)

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    Husen Dugo
    A new semiconductor has Nc = 1019 cm-3, Nv = 5 x 1018 cm-3, and Eg = 2 eV. If it is doped with 1017 donors (fully ionized), calculate the electron, hole, and intrinsic carrier concentrations at 627°C. Sketch the simplified band diagram, showing the position of EF.

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    Adama Science and Technology University School of Applied Natural Sciences Department of Applied Physics Electronics Device Assignment I (30%)

    Uploaded by

    Husen Dugo
    228 views1 page
    A new semiconductor has Nc = 1019 cm-3, Nv = 5 x 1018 cm-3, and Eg = 2 eV. If it is doped with 1017 donors (fully ionized), calculate the electron, hole, and intrinsic carrier concentrations at 627°C. Sketch the simplified band diagram, showing the position of EF.

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    assignment II

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    A new semiconductor has Nc = 1019 cm-3, Nv = 5 x 1018 cm-3, and Eg = 2 eV. If it is doped with 1017 donors (fully ionized), calculate the electron, hole, and intrinsic carrier concentrations at 627°C. Sketch the simplified band diagram, showing the position of EF.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    228 views1 page

    Adama Science and Technology University School of Applied Natural Sciences Department of Applied Physics Electronics Device Assignment I (30%)

    Uploaded by

    Husen Dugo
    A new semiconductor has Nc = 1019 cm-3, Nv = 5 x 1018 cm-3, and Eg = 2 eV. If it is doped with 1017 donors (fully ionized), calculate the electron, hole, and intrinsic carrier concentrations at 627°C. Sketch the simplified band diagram, showing the position of EF.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
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    Adama Science and Technology University

    School of Applied Natural Sciences


    Department of Applied Physics
    Electronics device Assignment I (30%)

    1. An unknown semiconductor has Eg = 1.1eV and Nc = Nv. It is doped with 1015 cm-3
    donors, where the donor level is 0.2 eV below Ec. Given that is EF is 0.25 eV below
    Ec, calculate ni, and the concentration of electrons and holes in the semiconductor at
    300 K.
    2. Derive an expression relating the intrinsic level E i to the center of the band gap Eg/2.
    Calculate the displacement of Ei from Eg/2 for Si at 300K, assuming the effective
    mass values for electrons and holes are l.lm0 and 0.56m0 respectively
    3. A new semiconductor has Nc = 1019 cm-3, Nv = 5 x 1018 cm-3, and Eg = 2 eV. If it is
    doped with 1017 donors (fully ionized), calculate the electron, hole, and intrinsic
    carrier concentrations at 627°C. Sketch the simplified band diagram, showing the
    position of EF.
    4. (a) Show that the minimum conductivity of a semiconductor sample occurs when n0

    μp
    =ni
    √ μn
    [Hint, begin with Eq. (3-43) and apply Eq. (3-24 from the text).

    (b) What is the expression for the minimum conductivityσ min?


    (c) Calculate σ minfor Si at 300 K and compare with the intrinsic conductivity
    5. A Si sample is doped with 1017 boron atoms/cm3. What is the electron concentration
    no at 300 K? What is the resistivity?
    6. Describe the formation of electron-hole pair in semiconductor materials using energy
    band diagram.
    7. Describe the difference between intrinsic carrier concentration and equilibrium carrier
    concentration.
    8. What is recombination? And describe the difference between direct and indirect
    recombination using energy band diagram.
    9. List the different components of current in semiconductor materials and derive an
    expression for drift current density due to electrons.
    10. What is the effect of temperature on carrier mobility in semiconductor materials?

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