2SK3473

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)

2SK3473
Switching Regulator Applications
Unit: mm

• Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)

• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 900 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 9 1. GATE
Drain current A
Pulse (Note 1) IDP 27 2. DRAIN (HEAT SINK)
3. SOURCE
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy
EAS 413 mJ JEDEC ―
(Note 2)
Avalanche current IAR 9 A JEITA SC-65

Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA 2-16C1B

Channel temperature Tch 150 °C Weight: 4.6 g (typ.)
Storage temperature range Tstg -55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W

1
Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 9.35 mH, IAR = 9 A, RG = 25 Ω

3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Start of commercial production

2001-10
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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA

Gate-source breakdown voltage V (BR) GSS ID = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A ⎯ 1.3 1.6 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 15 V, ID = 4 A 3.0 6.5 ⎯ S
Input capacitance Ciss ⎯ 1450 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 30 ⎯ pF

Output capacitance Coss ⎯ 155 ⎯

10 V ID = 4 A VOUT
Rise time tr VGS ⎯ 30 ⎯
0V
Turn-on time ton RL = ⎯ 55 ⎯
4.7 Ω
Switching time 100 Ω ns
Fall time tf ⎯ 12 ⎯
VDD ≈ 400 V

Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 75 ⎯

Total gate charge Qg ⎯ 38 ⎯

Gate-source charge Qgs VDD ≈ 400 V, VGS = 10 V, ID = 9 A ⎯ 22 ⎯ nC

Gate-drain charge Qgd ⎯ 16 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ⎯ ⎯ ⎯ 9 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 27 A
Forward voltage (diode) VDSF IDR = 9 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 9 A, VGS = 0 V, ⎯ 1350 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 15 ⎯ μC

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
TOSHIBA Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3473 Part No. (or abbreviation code)
Lot No. Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
Note 4 The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.

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ID – VDS ID – VDS
10 20
COMMON SOURCE COMMON SOURCE 8
10 6
Tc = 25°C Tc = 25°C 10
PULSE TEST PULSE TEST 7

(A)
(A)

8 16
6.5
5.5

DRAIN CURRENT ID
DRAIN CURRENT ID

6 12 6
5.25

5
4 8 5.5

4.75
5
2 4.5 4

VGS = 4 V
VGS = 4.5 V
0 0
0 4 8 12 16 20 0 10 20 30 40 50

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

20 20
VDS (V)

COMMON
COMMON SOURCE
SOURCE
VDS = 50 V
ID = 9 A Tc = 25℃
(A)

16 PULSE TEST 16 PULSE TEST

DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

12 12

100
8 8
25 4.5

Tc = −55°C 3
4 4

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

10 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

Tc = 25°C
PULSE TEST

Tc = −55°C
RDS (ON) (Ω)

VGS = 10 V､15V
25
⎪Yfs⎪ (S)

1 1
100

COMMON SOURCE
VDS = 50 V
PULSE TEST
0.1 0.1
0.1 1 10 0.01 0.1 1 10

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) – Tc IDR – VDS

5 10
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

DRAIN REVERSE CURRENT IDR

PULSE TEST Tc = 25°C
5
4 PULSE TEST
ID = 9A 3
RDS (ON) (Ω)

(A)
1
4.5
2
0.5
3
0.3
1
5 3
10
VGS = 0, −1 V
1
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5
GATE THRESHOLD VOLTAGE

4
(pF)

Ciss

1000
C

3
CAPACITANCE

Vth (V)

Coss
2
100
COMMON SOURCE COMMON SOURCE
VGS = 0 V Crss 1 VDS = 10 V
f = 1 MHz
ID = 1 mA
Tc = 25°C
PULSE TEST
10 0
0.1 1 10 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
200 600 12
VDS (V)

(V)
DRAIN POWER DISSIPATION

500 10
VGS

160
VDD = 100 V
DRAIN-SOURCE VOLTAGE

400 VDS 8
GATE-SOURCE VOLTAGE

120 200
PD (W)

300 400 6

80 VGS
200 COMMON SOURCE 4
ID = 9 A
40 Tc = 25°C
100 2
PULSE TEST

0 0 0
0 40 80 120 160 200 0 10 20 30 40

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

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rth – tw
10
Normalized transient thermal impedance
5
3

1
Duty = 0.5
rth (t)/Rth (ch-c)

0.5
0.3 0.2

0.1
0.1
0.05
0.05 Single pulse
0.02
0.03
PDM

0.01 0.01 t

0.005 T
0.003
Duty = t/T
Rth (ch-c) = 0.833°C/W
0.001
10 μ 100 μ 1m 10 m 100 m 1 10

Pulse width tw (s)

Safe operating area EAS – Tch

100 500

50
ID max (pulsed) * 100 μs *
Avalanche energy EAS (mJ)

30 400

10 300
1 ms *
ID max (continuous)
5
(A)

3 200
Drain current ID

DC operation
1 Tc = 25°C 100

0.5

0.3 0
25 50 75 100 125 150

0.1 Channel temperature (initial) Tch (°C)

* Single nonrepetitive pulse
0.05
Tc = 25°C
0.03 Curves must be derated linearly BVDSS
15 V
with increase in temperature.
IAR
VDSS max −15 V
0.01
1 3 5 10 30 50 100 300 500 1000 VDD VDS
Drain-source voltage VDS (V)

Test circuit Waveform

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 9.35 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.

• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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