2SK3398

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3398
Switching Regulator and DC-DC Converter Applications
Unit: mm
Motor Drive Applications

• Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 9.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 500 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 12
Drain current A
Pulse (Note 1) IDP 48
Drain power dissipation (Tc = 25°C) PD 100 W
Single pulse avalanche energy
JEDEC ―
EAS 364 mJ
(Note 2)
JEITA ―
Avalanche current IAR 12 A
TOSHIBA 2-9F1C
Repetitive avalanche energy (Note 3) EAR 10 mJ
Weight: 0.74 g (typ.)
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
4
Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 1.25 °C/W

1
Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.85 mH, RG = 25 Ω, IAR = 12 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3

This transistor is an electrostatic-sensitive device. Handle with care.

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA

Drain-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-OFF current IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 6 A ⎯ 0.4 0.52 Ω

Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 6 A 4.0 9.0 ⎯ S

Input capacitance Ciss ⎯ 2040 ⎯
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 200 ⎯ pF

Output capacitance Coss ⎯ 630 ⎯

Rise time tr 10 V ID = 6 A ⎯ 22 ⎯
VGS VOUT
0V
Turn-ON time ton ⎯ 58 ⎯
RL = 33 Ω
50 Ω
Switching time ns
Fall time tf ⎯ 36 ⎯

VDD ∼
− 200 V
Turn-OFF time toff Duty <
= 1%, tw = 10 μs ⎯ 180 ⎯

Total gate charge

Qg ⎯ 45 ⎯
(gate-source plus gate-drain)
VDD ∼
− 400 V, VGS = 10 V, ID = 10 A nC
Gate-source charge Qgs ⎯ 25 ⎯

Gate-drain (“miller”) charge Qgd ⎯ 20 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 12 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 48 A
Forward voltage (diode) VDSF IDR = 12 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 12 A, VGS = 0 V, ⎯ 1200 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 16 ⎯ μC

Marking

Part No. (or abbreviation code)

K3398

Lot No.

A line indicates
Lead (Pb)-Free Finish.

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 2SK3398

ID – VDS ID – VDS
12 24
Common 10 6 Common source
5.2 10 6.0
source
5.5 Tc = 25°C
10 Tc = 25°C 15 5 20 15
pulse test pulse test

Drain current ID (A)

5.75
Drain current ID (A)

8 16
5.2
4.75
6 12 5.0

4 4.5 8 4.75

4.5
2 4.25 4
VGS = 4.0 V
VGS = 4 V
0 0
0 2 4 6 8 10 0 10 20 30 40 50 60

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

24 12
Common source Common source
VDS = 20 V Tc = 25°C
20 10
VDS (V)

pulse test pulse test

Drain current ID (A)

16 8
Drain-source voltage

12 6 ID = 12 A

8 4
100 6
25 Tc = −55°C
4 2
3

0 0
0 2 4 6 8 10 12 0 4 8 12 16 20 24

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

⎪Yfs⎪ − ID RDS (ON) − ID

30 10
(S)

Common source Common source

VDS = 20 V 5 Tc = 25°C
Forward transfer admittance ⎪Yfs⎪

Tc = −55°C
Drain-source on resistance

Pulse test
10 Pulse test 100 3
(Ω)

25
5
RDS (ON)

3 1

0.5 VGS = 10, 15 V

1 0.3

0.5

0.3 0.1
0.1 0.3 0.5 1 3 5 10 30 0.1 0.3 0.5 1 3 5 10 30

Drain current ID (A) Drain current ID (A)

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 2SK3398

RDS (ON) − Tc IDR − VDS

2.5 100
(Ω)

Common source Common source

VGS = 10 V Tc = 25°C
Drain-source on resistance RDS (ON)

(A)
pulse test 30 pulse test
2.0

Drain reverse current IDR

10
1.5

ID = 12 A 3

1.0
10
3 1
5
6 3
0.5 0.3

1
VGS = 1 V
0 0.1
−80 −40 0 40 80 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2

Case temperature Tc (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth − Tc

5000 5
Common source
3000 VDS = 10 V
Ciss ID = 1 mA
Vth (V)

pulse test
4
1000
(pF)

500
Gate threshold voltage

3
Capacitance C

300
Coss
2
100
50
Common source Crss 1
30
VGS = 0 V
f = 1 MHz
Tc = 25°C
10 0
0.1 0.3 0.5 1 3 5 10 30 50 100 −80 −40 0 40 80 120 160

Drain-source voltage VDS (V) Case temperature Tc (°C)

PD − Tc Dynamic input/output characteristics

50 600 24
Common source
ID = 12 A
Drain power dissipation PD (W)

Tc = 25°C
VGS (V)
VDS (V)

500 20
40 pulse test

VDS
400 16
30
Gate-source voltage
Drain-source voltage

VDD = 80 V
300 12
200
20 400
200 8

10
100 VGS 6

0 0 0
0 40 80 120 160 200 0 10 20 30 40 50 60

Case temperature Tc (°C) Total gate charge Qg (nC)

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rth − tw
3

Normalized transient thermal impedance

1

Duty = 0.5

0.3
rth (t)/Rth (ch-c)

0.2

0.1
0.1
0.05
0.02 PDM
0.03 Single Pulse
t

0.01 T
0.01
Duty = t/T
Rth (ch-c) = 1.25°C/W
0.003
10 μ 100 μ 1m 10 m 100 m 1 10

Pulse width tw (S)

Safe operating area EAS – Tch

100 500
ID max (pulsed) *
50
Avalanche energy EAS (mJ)

30 400
100 μs *
ID max (continuous)
10
300
1 ms *
Drain current ID (A)

3
200

DC operation
1
Tc = 25°C
100
0.5
0.3
0
25 50 75 100 125 150
0.1
Channel temperature (initial) Tch (°C)
0.05 *: Single nonrepetitive pulse
Tc = 25°C
0.03 Curves must be derated
linearly with increase in VDSS max
temperature.
0.01 BVDSS
1 10 100 1000
15 V
Drain-source voltage VDS (V) IAR
−15 V
VDD VDS

Test circuit Wave form

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 4.3 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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