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Voltage Reference

Here are the steps to solve this problem: a) For ZTC, the temperature dependence of VBE and VT should cancel each other out. ∂VBE/∂T = -1.8 mV/°C ∂VT/∂T = +0.087 mV/°C Equating the two and solving for n gives: n = 20 R4/R3 = 20 b) Given: R3 = 1 kΩ, R4 = 10 kΩ, R5 = 5 kΩ Using the BGR equation: VREF = VBE3 + VTln(R4/R3) + (R5/R4+R5

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99 views

Voltage Reference

Here are the steps to solve this problem: a) For ZTC, the temperature dependence of VBE and VT should cancel each other out. ∂VBE/∂T = -1.8 mV/°C ∂VT/∂T = +0.087 mV/°C Equating the two and solving for n gives: n = 20 R4/R3 = 20 b) Given: R3 = 1 kΩ, R4 = 10 kΩ, R5 = 5 kΩ Using the BGR equation: VREF = VBE3 + VTln(R4/R3) + (R5/R4+R5

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satyam
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Current mirrors and Voltage reference

circuits
Resource:
 CMOS analog Circuit Design, Oxford University

Press, P.E. Allen, D. R. Holberg.


 Design of Analog CMOS Integrated Circuits,
Behzad Razavi, TMH.
Note to students
 The slides are introductory and doesn’t include all the syllabus.
 Most of the lectures are taken without the help of ppt. So this ppt. does not
include all the content.

 Read Chapter 11 Bandgap references from “Design of Analog CMOS


Integrated Circuits” from Behzad Razavi
Reference circuitry
Reference circuitry
A Reference Circuit is an independent voltage or current source
which has a high degree of precision and stability.

Requirements:
 Output voltage/current should be independent of Power Supply
 Output voltage/current should be independent of temperature
 Output voltage/current should be independent of process
variations.
Notes

Current Mirrors
Supply independent Biasing
Temperature independent references (some portion
already being covered, refer to earlier lectures)
MOS Cascode Current Mirror
MOS Cascode Current Mirror
Terminologies

 Sensitivity:
The sensitivity is defined as the relative variation of the
reference current or voltage Vref / Iref with any circuit parameter
let’s say VDD.
(VREF / VREF )
S VREF

(VDD / VDD )
VDD

VDD  VREF 
S VREF
  
 VDD
VDD
VREF 
Terminologies
 Temperature Coefficient:

The temperature coefficient is defined as the sensitivity of Xref to


temperature variations, normalized to one degree.
Voltage Divider Reference

V REF
S V DD
Voltage Reference using BJT
Voltage Reference: Supply Independent
Biasing
Module-2

Temperature Independent References


Temperature independent references
Temperature independent references
For a BJT the collector current is given as:

I C  I S exp(VBE / VT ) VT  kT / q

I S  kTni
2

4 m  Eg 
I S  bT exp  

 kT 
Temperature independent references

VBE V Tln( IC / I S )

VBE / T

VBE  (4  m)VT  Eg / q
VBE / T 
T

If VBE = 0.75 V, T = 300 K, VBE / T  1.5mV / o


C
Generation of PTAT voltage

VBE V Tln n

VBE k
 ln n
T q
BGR
What should be required value of n for ZTC (Zero Temp. Coeff. )

Why the name is bandgap reference (BGR)?


Actual implementation of a BGR

 R2 
Vout  VBE 2 V Tln n1  
 R3 
Low Voltage implementation of a BGR

Find Vout
Low Voltage implementation of a BGR
For bandgap reference circuitry shown in Fig. assume all the
resistances are independent of temperature. The aspect ratio of
transistor M1, M2 and M3 are equal, and emitter area of bipolar
transistor Q2 is 10 times emitter area of transistor Q1 (AE2:AE1= 10:1).
𝜕𝑉𝐸𝐵 𝜕𝑉𝑇
Given: VEB3 = 0.7 V, = −1.8 𝑚𝑉/℃ and = +0.087 𝑚𝑉/
𝜕𝑇 𝜕𝑇
℃ , VT = 26 mV.

a) Find out the ratio R4: R3 for zero temperature coefficient (ZTC) of
reference voltage (VREF).
b) If R3 = 1 kΩ, R4 = 10 kΩ and R5 = 5 kΩ what will be the value of
VREF for ZTC.
c) What will be temp coeff. of VREF (in PPM/0C) for case b).

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