Multiple Choice Questions and

Answers on Semiconductor
Theory
MULTIPLE CHOICE QUESTIONS AND ANSWERS BY SASMITA OCTOBER 15, 2015

Multiple Choice Questions and

Answers on Semiconductor Theory
In addition to reading the questions and answers on my site, I would suggest
you to check the following, on amazon, as well:

 Question Bank in Electronics & Communication Engineering by

Prem R Chadha
 A Handbook on Electronics Engineering – Illustrated Formulae &
Key Theory Concepts
Q1. A semiconductor is formed by ……… bonds.
1. Covalent
2. Electrovalent
3. Co-ordinate
4. None of the above
Answer : 1
Q2. A semiconductor has ………… temperature coefficient of resistance.
1. Positive
2. Zero
3. Negative
4. None of the above
Answer : 3
Q3. The most commonly used semiconductor is ………..
1. Germanium
2. Silicon
3. Carbon
4. Sulphur
Answer : 2
Q4. A semiconductor has generally ……………… valence electrons.
1. 2
2. 3
3. 6
4. 4
Answer : 4
Q5. The resistivity of pure germanium under standard conditions is about
……….
1. 6 x 104
2. Ω cm
3. 60
4. Ω cm
5. 3 x 106
6. Ω cm
7. 6 x 10-4
8. Ω cm
Answer : 2
Q6. The resistivity of a pure silicon is about ……………
1. 100 Ω cm
2. 6000 Ω cm
3. 3 x 105 Ω m
4. 6 x 10-8 Ω cm
Answer : 2
Q7. When a pure semiconductor is heated, its resistance …………..
1. Goes up
2. Goes down
3. Remains the same
4. Can’t say
Answer : 2
Q8. The strength of a semiconductor crystal comes from ……..
1. Forces between nuclei
2. Forces between protons
3. Electron-pair bonds
4. None of the above
Answer : 3
Q9. When a pentavalent impurity is added to a pure semiconductor, it
becomes ………
1. An insulator
2. An intrinsic semiconductor
3. p-type semiconductor
4. n-type semiconductor
Answer : 4
Q10. Addition of pentavalent impurity to a semiconductor creates many
……..
1. Free electrons
2. Holes
3. Valence electrons
4. Bound electrons
Answer : 1
Q11. A pentavalent impurity has ………. Valence electrons
1. 3
2. 5
3. 4
4. 6
Answer : 2
A12. An n-type semiconductor is ………
1. Positively charged
2. Negatively charged
3. Electrically neutral
4. None of the above
Answer : 3
Q13. A trivalent impurity has ….. valence electrons
1. 4
2. 5
3. 6
4. 3
Answer : D4
A14. Addition of trivalent impurity to a semiconductor creates many ……..
1. Holes
2. Free electrons
3. Valence electrons
4. Bound electrons
Answer : 1
Q15. A hole in a semiconductor is defined as …………….
1. A free electron
2. The incomplete part of an electron pair bond
 3. A free proton
4. A free neutron
Answer : 2
Q16. The impurity level in an extrinsic semiconductor is about ….. of pure
semiconductor.
1. 10 atoms for 108 atoms
2. 1 atom for 108 atoms
3. 1 atom for 104 atoms
4. 1 atom for 100 atoms
Answer : 2
Q17. As the doping to a pure semiconductor increases, the bulk resistance
of the semiconductor ………..
1. Remains the same
2. Increases
3. Decreases
4. None of the above
Answer : 3
Q18. A hole and electron in close proximity would tend to ……….
1. Repel each other
2. Attract each other
3. Have no effect on each other
4. None of the above
Answer : 2
Q19. In a semiconductor, current conduction is due to ……..
1. Only holes
2. Only free electrons
3. Holes and free electrons
4. None of the above
Answer : 3
Q20. The random motion of holes and free electrons due to thermal
agitation is called ……….
1. Diffusion
2. Pressure
3. Ionisation
4. None of the above
Answer : 1
Q21. A forward biased pn junction diode has a resistance of the order of
1. Ω
2. kΩ
3. MΩ
4. None of the above
Answer : 1
Q22. The battery connections required to forward bias a pn junction are
……
1. +ve terminal to p and –ve terminal to n
2. -ve terminal to p and +ve terminal to n
3. -ve terminal to p and –ve terminal to n
4. None of the above
Answer : 1
Q23. The barrier voltage at a pn junction for germanium is about ………
3. 5 V
4. 3 V
5. Zero
6. 3 V
Answer : 4
Q24. In the depletion region of a pn junction, there is a shortage of ……..
1. Acceptor ions
2. Holes and electrons
3. Donor ions
4. None of the above
Answer : 2
Q25. A reverse bias pn junction has …………
1. Very narrow depletion layer
2. Almost no current
3. Very low resistance
4. Large current flow
Answer : 2
Q26. A pn junction acts as a ……….
1. Controlled switch
2. Bidirectional switch
3. Unidirectional switch
4. None of the above
Answer : 3
Q27. A reverse biased pn junction has resistance of the order of
1. Ω
2. kΩ
 3. MΩ
4. None of the above
Answer : 3
Q28. The leakage current across a pn junction is due to …………..
1. Minority carriers
2. Majority carriers
3. Junction capacitance
4. None of the above
Answer : 1
Q29. When the temperature of an extrinsic semiconductor is increased, the
pronounced effect is on……
1. Junction capacitance
2. Minority carriers
3. Majority carriers
4. None of the above
Answer : 2
Q30. With forward bias to a pn junction , the width of depletion layer
………
1. Decreases
2. Increases
3. Remains the same
4. None of the above
Answer : 1
Q31.  The leakage current in a pn junction is of the order of
1. Aa
2. mA
3. kA
4. µA
Answer : 4
Q32. In an intrinsic semiconductor, the number of free electrons ………
1. Equals the number of holes
2. Is greater than the number of holes
3. Is less than the number of holes
4. None of the above
Answer : 1
Q33. At room temperature, an intrinsic semiconductor has ……….
1. Many holes only
2. A few free electrons and holes
 3. Many free electrons only
4. No holes or free electrons
Answer : 2
Q34. At absolute temperature, an intrinsic semiconductor has ……….
1. A few free electrons
2. Many holes
3. Many free electrons
4. No holes or free electrons
Answer : 4
Q35. At room temperature, an intrinsic silicon crystal acts approximately
as ……
1. A battery
2. A conductor
3. An insulator
4. A piece of copper wire
Answer : 3
Multiple Choice Questions and
Answers on Semiconductor
Diode
MULTIPLE CHOICE QUESTIONS AND ANSWERS BY SASMITA APRIL 9, 2016

Multiple Choice Questions and

Answers on Semiconductor Diode
In addition to reading the questions and answers on my site, I would suggest
you to check the following, on amazon, as well:

 Question Bank in Electronics & Communication Engineering by

Prem R Chadha
 A Handbook on Electronics Engineering – Illustrated Formulae &
Key Theory Concepts
Q1. A crystal diode has ………
1. one pn junction
2. two pn junctions
3. three pn junctions
4. none of the above
Answer : 1
Q2. A crystal diode has forward resistance of the order of ……………
1. kΩ
2. Ω
3. MΩ
4. none of the above
Answer : 2
Q3. If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is
………….. biased.
1. forward
2. reverse
3. either forward or reverse
4. none of the above
Answer : 1
Q4. The reverse current in a diode is of the order of ……………….
1. kA
2. mA
3. μA
4. A
Answer : 3
Q5. The forward voltage drop across a silicon diode is about
…………………
1. 2.5 V
2. 3 V
3. 10 V
4. 0.7 V
Answer : 4
Q6. A crystal diode is used as ……………
1. an amplifier
2. a rectifier
3. an oscillator
4. a voltage regulator
Answer : 2
Q7. The d.c. resistance of a crystal diode is ………….. its a.c. resistance
1. the same as
2. more than
3. less than
4. none of the above
Answer : 3
Q8. An ideal crystal diode is one which behaves as a perfect ……….. when
forward biased.
1. conductor
2. insulator
3. resistance material
4. none of the above
Answer : 1
Q9. The ratio of reverse resistance and forward resistance of a germanium
crystal diode is about ………….
1. 1 : 1
2. 100 : 1
3. 1000 : 1
 4. 40,000 : 1
Answer : 4
Q 10. The leakage current in a crystal diode is due to …………….
1. minority carriers
2. majority carriers
3. junction capacitance
4. none of the above
Answer :1
Q11. If the temperature of a crystal diode increases, then leakage current
………..
1. remains the same
2. decreases
3. increases
4. becomes zero
Answer :3
Q12. The PIV rating of a crystal diode is ………….. that of equivalent
vacuum diode
1. the same as
2. lower than
3. more than
4. none of the above
Answer :2
Q13. If the doping level of a crystal diode is increased, the breakdown
voltage………….
1. remains the same
2. is increased
3. is decreased
4. none of the above
Answer :3
Q14. The knee voltage of a crystal diode is approximately equal to
………….
1. applied voltage
2. breakdown voltage
3. forward voltage
4. barrier potential
Answer :4
Q15. When the graph between current through and voltage across a device
is a straight line, the device is referred to as ……………….
 1. linear
2. active
3. nonlinear
4. passive
Answer :1
Q16. When the crystal current diode current is large, the bias is …………
1. forward
2. inverse
3. poor
4. reverse
Answer :1
Q17. A crystal diode is a …………… device
1. non-linear
2. bilateral
3. linear
4. none of the above
Answer :1
Q18. A crystal diode utilises …………….. characteristic for rectification
1. reverse
2. forward
3. forward or reverse
4. none of the above
Answer :2
Q19. When a crystal diode is used as a rectifier, the most important
consideration is ………..
1. forward characteristic
2. doping level
3. reverse characteristic
4. PIC rating
Answer :4
Q20. If the doping level in a crystal diode is increased, the width of
depletion layer………..
1. remains the same
2. is decreased
3. in increased
4. none of the above
Answer :3
Q21. A zener diode has ………..
 1. one pn junction
2. two pn junctions
3. three pn junctions
4. none of the above
Answer :1
Q22. A zener diode is used as …………….
1. an amplifier
2. a voltage regulator
3. a rectifier
4. a multivibrator
Answer :2
Q23. The doping level in a zener diode is …………… that of a crystal diode
1. the same as
2. less than
3. more than
4. none of the above
Answer :3
Q24. A zener diode is always ………… connected.
1. reverse
2. forward
3. either reverse or forward
4. none of the above
Answer :1
Q25. A zener diode utilizes ……….. characteristics for its operation.
1. forward
2. reverse
3. both forward and reverse
4. none of the above
Answer :2
Q26. In the breakdown region, a zener didoe behaves like a ……………
source.
1. constant voltage
2. constant current
3. constant resistance
4. none of the above
Answer :1
27. A zener diode is destroyed if it…………..
1. is forward biased
2. is reverse biased
3. carrier more than rated current
4. none of the above
Answer :3
Q28. A series resistance is connected in the zener circuit to………..
1. properly reverse bias the zener
2. protect the zener
3. properly forward bias the zener
4. none of the above
Answer :2
A29. A zener diode is …………………. device
1. a non-linear
2. a linear
3. an amplifying
4. none of the above
Answer :1
Q30. A zener diode has ………….. breakdown voltage
1. undefined
2. sharp
3. zero
4. none of the above
Answer :2
Q31. ……………. rectifier has the lowest forward resistance
1. solid state
2. vacuum tube
3. gas tube
4. none of the above
Answer :1
Q32. Mains a.c. power is converrted into d.c. power for ……………..
1. lighting purposes
2. heaters
3. using in electronic equipment
4. none of the above
Answer :3
Q33. The disadvantage of a half-wave rectifier is that the……………….
1. components are expensive
2. diodes must have a higher power rating
3. output is difficult to filter
 4. none of the above
Answer :3
Q34. If the a.c. input to a half-wave rectifier is an r.m.s value of 400/√2
volts, then diode PIV rating is ………………….
1. 400/√2 V
2. 400 V
3. 400 x √2 V
4. none of the above
Answer :2
Q35. The ripple factor of a half-wave rectifier is …………………
1. 2
2. 1.21
3. 2.5
4. 0.48
Answer :2
Q36. There is a need of transformer for ………………..
1. half-wave rectifier
2. centre-tap full-wave rectifier
3. bridge full-wave rectifier
4. none of the above
Answer :2
Q37. The PIV rating of each diode in a bridge rectifier is ………………
that of the equivalent centre-tap rectifier
1. one-half
2. the same as
3. twice
4. four times
Answer :1
Q38. For the same secondary voltage, the output voltage from a centre-tap
rectifier is ………… than that of bridge rectifier
1. twice
2. thrice
3. four time
4. one-half
Answer :4
Q39. If the PIV rating of a diode is exceeded, ………………
1. the diode conducts poorly
2. the diode is destroyed
 3. the diode behaves like a zener diode
4. none of the above
Answer :2
Q40. A 10 V power supply would use …………………. as filter capacitor.
1. paper capacitor
2. mica capacitor
3. electrolytic capacitor
4. air capacitor
Answer :3
Q41. A 1,000 V power supply would use ……….. as a filter capacitor
1. paper capacitor
2. air capacitor
3. mica capacitor
4. electrolytic capacitor
Answer :1
Q42. The ……………….. filter circuit results in the best voltage regulation
1. choke input
2. capacitor input
3. resistance input
4. none of the above
Answer :1
Q43. A half-wave rectifier has an input voltage of 240 V r.m.s. If the step-
down transformer has a turns ratio of 8:1, what is the peak load voltage?
Ignore diode drop.
1. 27.5 V
2. 86.5 V
3. 30 V
4. 42.5 V
Answer :4
Q44. The maximum efficiency of a half-wave rectifier is ………………..
1. 40.6 %
2. 81.2 %
3. 50 %
4. 25 %
Answer :1
Q45. The most widely used rectifier is ……………….
1. half-wave rectifier
2. centre-tap full-wave rectifier
3. bridge full-wave rectifier
4. none of the above
Answer :3

Q1. A transistor has …………………

1. one pn junction
2. two pn junctions
3. three pn junctions
4. four pn junctions
Answer : 2
Q2. The number of depletion layers in a transistor is …………
1. four
2. three
3. one
4. two
Answer : 4
Q3. The base of a transistor is ………….. doped
1. heavily
2. moderately
3. lightly
4. none of the above
Answer : 3
Q4. The element that has the biggest size in a transistor is ………………..
1. collector
2. base
3. emitter
4. collector-base-junction
Answer : 1
Q5. In a pnp transistor, the current carriers are ………….
1. acceptor ions
2. donor ions
3. free electrons
4. holes
Answer : 4
Q6. The collector of a transistor is …………. doped
1. heavily
2. moderately
3. lightly
4. none of the above
Answer : 2
Q7. A transistor is a …………… operated device
1. current
2. voltage
3. both voltage and current
4. none of the above
Answer : 1
Q8. In a npn transistor, ……………. are the minority carriers
1. free electrons
2. holes
3. donor ions
4. acceptor ions
Answer : 2
Q9. The emitter of a transistor is ………………… doped
1. lightly
2. heavily
3. moderately
4. none of the above
Answer : 2
Q10. In a transistor, the base current is about ………….. of emitter current
1. 25%
2. 20%
3. 35 %
4. 5%
Answer : 4
Q11. At the base-emitter junctions of a transistor, one finds ……………
1. a reverse bias
2. a wide depletion layer
3. low resistance
4. none of the above
Answer : 3
Q12. The input impedance of a transistor is ………….
1. high
2. low
3. very high
4. almost zero
Answer : 2
Q13. Most of the majority carriers from the emitter ………………..
1. recombine in the base
2. recombine in the emitter
3. pass through the base region to the collector
4. none of the above
Answer :3
Q14. The current IB is …………
1. electron current
2. hole current
3. donor ion current
4. acceptor ion current
Answer : 1
Q15. In a transistor ………………..
IC = IE + IB
IB = IC + IE
IE = IC – IB
IE  = IC + IB
Answer : 4
Q16. The value of α of a transistor is ……….
 more than 1
 less than 1
 1
 none of the above
Answer : 2
Q17. IC = αIE + ………….
1. IB
2. ICEO
3. ICBO
4. βIB
Answer : 3
Q18. The output impedance of a transistor is ……………..
 1. high
2. zero
3. low
4. very low
Answer : 1
Q19. In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of β is
…………
1. 100
2. 50
3. about 1
4. 200
Answer : 4
Q20. In a transistor if β = 100 and collector current is 10 mA, then  IE is
…………
1. 100 mA
2. 100.1 mA
3. 110 mA
4. none of the above
Answer : 2
Q21. The relation between β and  α is …………..
1. β = 1 / (1 – α )
2. β = (1 – α ) / α
3. β = α / (1 – α )
4. β = α / (1 + α )
Answer : 3
Q22. The value of β for a transistor is generally ………………..
1. 1
2. less than 1
3. between 20 and 500
4. above 500
Answer : 3
Q23. The most commonly used transistor arrangement is ……………
arrangement
1. common emitter
2. common base
3. common collector
4. none of the above
Answer : 1
Q24. The input impedance of a transistor connected in ……………..
arrangement is the highest
1. common emitter
2. common collector
3. common base
4. none of the above
Answer : 2
Q25. The output impedance of a transistor connected in …………….
arrangement is the highest
1. common emitter
2. common collector
3. common base
4. none of the above
Answer : 3
Q26. The phase difference between the input and output voltages in a
common base arrangement is …………….
1. 180o
2. 90o
3. 270o
4. 0o
Answer : 4
Q27. The power gain in a transistor connected in ……………. arrangement
is the highest
1. common emitter
2. common base
3. common collector
4. none of the above
Answer : 1
Q28. The phase difference between the input and output voltages of a
transistor connected in common emitter arrangement is ………………
1. 0o
2. 180o
3. 90o
4. 270o
Answer : 2
Q29. The voltage gain in a transistor connected in ……………….
arrangement is the highest
1. common base
 2. common collector
3. common emitter
4. none of the above
Answer : 3
Q30. As the temperature of a transistor goes up, the base-emitter resistance
……………
1. decreases
2. increases
3. remains the same
4. none of the above
Answer : 1
Q31. The voltage gain of a transistor connected in common collector
arrangement is ………..
1. equal to 1
2. more than 10
3. more than 100
4. less than 1
Answer : 4
Q32. The phase difference between the input and output voltages of a
transistor connected in common collector arrangement is ………………
1. 180o
2. 0o
3. 90o
4. 270o
Answer : 2
Q33. IC = β IB + ………..
1. ICBO
2. IC
3. ICEO
4. αIE
Answer : 3
Q34. IC = [α / (1 – α )] IB + ………….
1. ICEO
2. ICBO
3. IC
4. (1 – α ) IB
Answer : 1
Q35. IC = [α / (1 – α )] IB + […….. / (1 – α )]
1. ICBO
2. ICEO
3. IC
4. IE
Answer : 1
Q36. BC 147 transistor indicates that it is made of …………..
1. germanium
2. silicon
3. carbon
4. none of the above
Answer : 2
Q37. ICEO = (………) ICBO
1. β
2. 1 + α
3. 1 + β
4. none of the above
Answer : 3
Q38. A transistor is connected in CB mode. If it is not connected in CE
mode with same bias voltages, the values of I E, IB and IC will …………..
1. remain the same
2. increase
3. decrease
4. none of the above
Answer : 1
Q39. If the value of α is 0.9, then value of  β is ………..
1. 9
2. 0.9
3. 900
4. 90
Answer : 4
Q40. In a transistor, signal is transferred from a …………… circuit
1. high resistance to low resistance
2. low resistance to high resistance
3. high resistance to high resistance
4. low resistance to low resistance
Answer : 2
Q41. The arrow in the symbol of a transistor indicates the direction of
………….
 1. electron current in the emitter
2. electron current in the collector
3. hole current in the emitter
4. donor ion current
Answer : 3
Q42. The leakage current in CE arrangement is ……………. that in CB
arrangement
1. more than
2. less than
3. the same as
4. none of the above
Answer : 1
Q43. A heat sink is generally used with a transistor to …………
1. increase the forward current
2. decrease the forward current
3. compensate for excessive doping
4. prevent excessive temperature rise
Answer : 4
Q44. The most commonly used semiconductor in the manufacture of a
transistor is ………….
1. germanium
2. silicon
3. carbon
4. none of the above
Answer : 2
Q45. The collector-base junction in a transistor has ……………..
1. forward bias at all times
2. reverse bias at all times
3. low resistance
4. none of the above
Answer : 2
Q46. When transistors are used in digital circuits they usually operate in
the ………….
1. active region
2. breakdown region
3. saturation and cutoff regions
4. linear region
Answer : 3
Q47. Three different Q points are shown on a dc load line. The upper Q
point represents the ………….
1. minimum current gain
2. intermediate current gain
3. maximum current gain
4. cutoff point
Answer : 3
Q48. A transistor has a   of 250 and a base current, IB, of 20   A. The
collector current, IC, equals to …………….
1. 500 μA
2. 5 mA
3. 50 mA
4. 5 A
Answer : 2
Q49. A current ratio of IC/IE is usually less than one and is called …………
1. beta
2. theta
3. alpha
4. omega
Answer : 3
Q50. With the positive probe on an NPN base, an ohmmeter reading
between the other transistor terminals should be ……
1. open
2. infinite
3. low resistance
4. high resistance
Answer : 3
Q51. In a CE configuration, an emitter resistor is used for ……
1. stabilization
2. ac signal bypass
3. collector bias
4. higher gain
Answer : 1
Q52. Voltage-divider bias provides ……….
1. an unstable Q point
2. a stable Q point
3. a Q point that easily varies with changes in the transistor’s current gain
4. a Q point that is stable and easily varies with changes in the transistor’s
current gain
Answer : 2
Q53. To operate properly, a transistor’s base-emitter junction must be
forward biased with reverse bias applied to which junction?
1. collector-emitter
2. base-collector
3. base-emitter
4. collector-base
Answer : 4
Q54. The ends of a load line drawn on a family of curves determine ……
1. saturation and cutoff
2. the operating point
3. the power curve
4. the amplification factor
Answer : 1
Q55. If VCC = +18 V, voltage-divider resistor R1 is 4.7 k , and R2 is 1500 ,
then the base bias voltage is ……….
1. 8.7 V
2. 4.35 V
3. 2.9 V
4. 0.7 V
Answer: 2
Q56. The C-B configuration is used to provide which type of gain?
1. voltage
2. current
3. resistance
4. power
Answer : 1
Q57. The Q point on a load line may be used to determine …………
1. VC
2. VCC
3. VB
4. IC
Answer : 3
Q58. A transistor may be used as a switching device or as a ………….
1. fixed resistor
2. tuning device
 3. rectifier
4. variable resistor
Answer : 4
Q59. If an input signal ranges from 20–40  A (microamps), with an output
signal ranging from .5–1.5 mA (milliamps), what is the ac beta?
1. 0.05
2. 20
3. 50
4. 500
Answer : 3
Q60. Beta’s current ratio is ……..
1. IC/IB
2. IC/IE
3. IB/IE
4. IE/IB
Answer: 1
Q61. A collector characteristic curve is a graph showing ………..
1. emitter current (IE) versus collector-emitter voltage (VCE) with (VBB) base
bias voltage held constant
2. collector current (IC) versus collector-emitter voltage (VCE) with (VBB)
base bias voltage held constant
3. collector current (IC) versus collector-emitter voltage (VC) with (VBB) base
bias voltage held constant
4. collector current (IC) versus collector-emitter voltage (VCC) with (VBB)
base bias voltage held constant
Answer: 2
Q62. With low-power transistor packages, the base terminal is usually the
……….
1. tab end
2. middle
3. right end
4. stud mount
Answer: 2
Q63. When a silicon diode is forward biased,  VBE for a CE configuration is
……..
1. voltage-divider bias
2. 0.4 V
3. 0.7 V
 4. emitter voltage
Answer: 3
Q64. What is the current gain for a common-base configuration where I E =
4.2 mA and IC = 4.0 mA?
1. 16.8
2. 1.05
3. 0.2
4. 0.95
Answer: 4
Q65. With a PNP circuit, the most positive voltage is probably …………
1. ground
2. VC
3. VBE
4. VCC
Answer: 1
Q66. If a 2 mV signal produces a 2 V output, what is the voltage gain?
1. 0.001
2. 0.004
3. 100
4. 1000
Answer: 4
Q67. Most of the electrons in the base of an NPN transistor flow …………
1. out of the base lead
2. into the collector
3. into the emitter
4. into the base supply
Answer: 2
Q68. In a transistor, collector current is controlled by ………..
1. collector voltage
2. base current
3. collector resistance
4. all of the above
Answer: 2
Q69. Total emitter current is …………
1. IE – IC
2. IC + IE
3. IB + IC
4. IB – IC
Answer: 3
Q70. Often a common-collector will be the last stage before the load; the
main function(s) of this stage is to ………….
1. provide voltage gain
2. provide phase inversion
3. provide a high-frequency path to improve the frequency response
4. buffer the voltage amplifiers from the low-resistance load and provide
impedance matching for maximum power transfer
Answer: 4
 

Q71. For a CC configuration to operate properly, the collector-base

junction should be reverse biased, while forward bias should be applied to
…………… junction.
1. collector-emitter
2. base-emitter
3. collector-base
4. cathode-anode
Answer: 1
Q72. The input/output relationship of the common-collector and common-
base amplifiers is ………..
1. 270 degrees
2. 180 degrees
3. 90 degrees
4. 0 degrees
Answer: 4
Q73. If a transistor operates at the middle of the dc load line, a decrease in
the current gain will move the Q point ………….
1. off the load line
2. nowhere
3. up
4. down
Answer: 4
Q74. Which is the higher gain provided by a CE configuration?
1. voltage
2. current
3. resistance
4. power
Answer: 4
Q75. What is the collector current for a CE configuration with a beta of
100 and a base current of 30  A?
1. 30  A
2. 0.3  A
3. 3 mA
4. 3 MA
Answer: 3

Q1. In an unregulated power supply, if load current increases, the output

voltage ………..
1. Remains the same
2. Decreases
3. Increases
4. None of the above
Answer : 2
Q2. In an unregulated power supply, if input a.c. voltage increases, the
output voltage …….
1. Increases
2. Decreases
3. Remains the same
4. None of the above
Answer : 1
Q3. A power supply which has voltage regulation of ……….. is unregulated
power supply
1. 0 %
2. 5 %
3. 10 %
4. 8%
Answer : 3
Q4. Commercial power supplies have voltage regulation ………….
1. of 10%
2. of 15%
3. of 25%
4. within 1%
Answer : 4
Q5. An ideal regulated power supply is one which has voltage regulation of
…………
1. 0%
2. 5%
3. 10%
4. 1%
Answer : 1
Q6. A Zener diode utilises ………… characteristic for voltage regulation
1. Forward
2. Reverse
3. Both forward and reverse
4. None of the above
Answer : 2
Q7. Zener diode can be used as …………
1. c. voltage regulator only
2. c. voltage regulator only
3. both d.c. and a.c. voltage regulator
4. none of the above
Answer : 3
Q8. A Zener diode is used as a …………… voltage regulating device
1. Shunt
2. Series
3. Series-shunt
4. None of the above
Answer : 1
Q9. As the junction temperature increases, the voltage breakdown point for
Zener mechanism …………
1. Is increased
2. Is decreased
3. Remains the same
4. None of the above
Answer : 2
Q10. The rupture of co-valent bonds will occur when the electric field is
………….
1. 100 V/cm
2. 6 V/cm
3. 1000 V/cm
4. More than 105 V/cm
Answer : 4
Q11. In a 15 V Zener diode , the breakdown mechanism will occur by
………….
1. Avalanche mechanism
2. Zener mechanism
3. Both Zener and avalanche mechanism
4. None of the above
Answer : 1
Q12. A Zener diode that has very narrow depletion layer will breakdown
by ……… mechanism
1. Avalanche
2. Zener
3. Both avalanche and Zener
4. None of the above
Answer : 2
Q13. As the junction temperature increases, the voltage breakdown point
for avalanche mechanism ………….
1. Remains the same
2. Decrease
3. Increases
4. None of the above
Answer : 3
Q14. Another name for Zener diode is ………… diode
1. Breakdown
2. Voltage
3. Power
4. Current
Answer : 1
Q15. Zener diode are generally made of ……….
1. Germanium
2. Silicon
3. Carbon
4. None of the above
Answer : 2
Q16. For increasing the voltage rating, zeners are connected in …………..
1. Parallel
2. Series-parallel
3. Series
4. None of the above
Answer : 3
Q17. In a Zener voltage regulator, the changes in load current produce
changes in …………….
1. Zener current
2. Zener voltage
3. Zener voltage as well as Zener current
4. None of the above
Answer : 1
Q18. A Zener voltage regulator is used for …………… load currents
1. High
2. Very high
3. Moderate
4. Small
Answer : 4
Q19. A Zener voltage regulator will cease to act as a voltage regulator if
Zener current becomes ……………
1. Less than load current
2. Zero
3. More than load current
4. None of the above
Answer : 2
Q20. If the doping level is increased, the breakdown voltage of the Zener
…………..
1. Remains the same
2. Is increased
3. Is decreased
4. None of the above
Answer : 3
Q21. A 30 V Zener will have depletion layer width …………. that of 10 V
Zener
1. More than
2. Less than
3. Equal to
4. None of the above
Answer : 1
Q22. The current in a Zener diode is limited by …………..
1. External resistance
2. Power dissipation
 3. Both (1) and (2)
4. None of the above
Answer : 3
Q23. A 5 mA changes in Zener current produces a 50 mA change in Zener
voltage. What is the Zener impedance?
1. 1 Ω
2. 1 Ω
3. 100 Ω
4. 10 Ω
Answer : 4
Q24. A certain regulator has a no-load voltage of 6 V and a full-load output
of 5.82 V. What is the load regulation?
1. 09%
2. 87 %
3. 72 %
4. None of the above
Answer : 1
Q25. What is true about the breakdown voltage in a Zener diode?
1. It decreases when load current increases
2. It destroys the diode
3. It equals current times the resistance
4. It is approximately constant
Answer : 4
Q26. Which of these is the best description for a Zener diode?
1. It is a diode
2. It is a constant current device
3. It is a constant-voltage device
4. It works in the forward region
Answer : 3
Q27. A Zener diode …………..
1. Is a battery
2. Acts like a battery in the breakdown region
3. Has a barrier potential of 1 V
4. Is forward biased
Answer : 2
Q28. The load voltage is approximately constant when a Zener diode is
……….
1. Forward biased
 2. Unbiased
3. Reverse biased
4. Operating in the breakdown region
Answer : 4
Q29. In a loaded Zener regulator, which is the largest Zener current?
1. Series current
2. Zener current
3. Load current
4. None of the above
Answer : 1
Q30. If the load resistance decreases in a Zener regulator, then Zener
current …………….
1. Decreases
2. Stays the same
3. Increases
4. None of the above
Answer : 1
Q31. If the input a.c. voltage to regulated or ordinary power supply
increases by 5% what will be the approximate change in d.c. output
voltage?
1. 10%
2. 20%
3. 15%
4. 5%
Answer : 4
Q32. If the load current drawn by unregulated power supply increases, the
d.c. output voltage ………..
1. Increases
2. Decreases
3. Stays the same
4. None of the above
Answer : 2
Q33. If the load current drawn by unregulated power supply increases, the
d.c. output voltage ………
1. Increases
2. Decreases
3. Stays the same
4. None of the above
Answer : 2
Q34. A power supply has a voltage regulation of 1%. If the no-load  voltage
is 20 V, what is the full-load voltage?
1. 8 V
2. 7 V
3. 6 V
4. 2 V
Answer : 1
Q35. Two similar 15 V Zeners are connected in series. What is the
regulated output voltage?
1. 15 V
2. 5 V
3. 30 V
4. 45 V
Answer : 3
Q36. A power supply can deliver a maximum rated current of 0.5 A at full-
load output voltage of 20 V. What is the minimum load resistance that you
can connect across the supply?
1. 10 Ω
2. 20 Ω
3. 15 Ω
4. 40 Ω
Answer : 4
Q37. In a regulated power supply, two similar 15 V zeners are connected in
series. The input voltage is 45 V d.c. If each Zener has a maximum current
rating of 300 mA, what should be the value of the series resistance?
1. 10 Ω
2. 50 Ω
3. 25 Ω
4. 40 Ω
Answer : 2
Q38. A Zener regulator …………… in the power supply
1. Increases the ripple
2. Decreases the ripple
3. Neither increases nor decreases the ripple
4. Data insufficient
Answer : 2
Q39. When load current is zero, the Zener current will be ………
1. Zero
2. Minimum
3. Maximum
4. None of the above
Answer : 3
Q40. The Zener current will be minimum when …………
1. Load current is maximum
2. Load current is minimum
3. Load current is zero
4. None of the above