SEMICONDUCTOR 2N3904

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
B C

FEATURES

A
Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.) N DIM MILLIMETERS
E A 4.70 MAX
K
@VCE=30V, VEB=3V. G B 4.80 MAX
D C 3.70 MAX
Excellent DC Current Gain Linearity. D 0.45

J
E 1.00
Low Saturation Voltage F 1.27
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. G 0.85
H 0.45
Low Collector Output Capacitance H J _ 0.50
14.00 +
F F K 0.55 MAX
: Cob=4pF(Max.) @VCB=5V. L 2.30
M 0.45 MAX
Complementary to 2N3906.
N 1.00
1 2 3

C
L

M
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
TO-92
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Base Current IB 50 mA

Collector Power Ta=25 625 mW

PC
Dissipation Tc=25 1.5 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150

2002. 9. 12 Revision No : 1 1/4

 2N3904

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA
Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V
hFE(1) VCE=1V, IC=0.1mA 40 - -
hFE(2) VCE=1V, IC=1mA 70 - -
DC Current Gain * hFE(3) VCE=1V, IC=10mA 100 - 300
hFE(4) VCE=1V, IC=50mA 60 - -
hFE(5) VCE=1V, IC=100mA 30 - -
VCE(sat)1 IC=10mA, IB=1mA - - 0.2
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=50mA, IB=5mA - - 0.3
VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=50mA, IB=5mA - - 0.95
Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 300 - - MHz
Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF
Input Impedance hie 1.0 - 10 k
Voltage Feedback Ratio hre 0.5 - 8.0 x10-4
VCE=10V, IC=1mA, f=1kHz
Small-Signal Current Gain hfe 100 - 400
Collector Output Admittance hoe 1.0 - 40
VCE=5V, IC=0.1mA Rg=1k ,
Noise Figure NF - - 5.0 dB
f=10Hz 15.7kHz
Vout

Delay Time td 10kΩ

- - 35
C Total< 4pF
275Ω

V in

300ns
VCC =3.0V
Rise Time tr 10.9V - - 35
0
-0.5V t r ,t f < 1ns, Du=2%
Switching Time nS
Vout

Storage Time tstg 10kΩ - - 200

275Ω

V in C Total< 4pF
1N916
or equiv.

20µs VCC =3.0V

Fall Time tf 10.9V - - 50
0
-9.1V t r ,t f < 1ns, Du=2%

* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.

2002. 9. 12 Revision No : 1 2/4

 2N3904

I C - V CE h FE - I C
100 1k
COMMON EMITTER 1 0.9 COMMON EMITTER
COLLECTOR CURRENT I C (mA)

0.8 VCE =1V

Ta=25 C 500
0.7
80

DC CURRENT GAIN h FE
0.6 Ta=125 C
300
0.5
Ta=25 C
60 0.4
0.3 Ta=-55 C
100
40
0.2 50
30
20 I B =0.1mA

0 10
0 1 2 3 4 0.1 0.3 1 3 10 30 100 300

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)

V BE(sat) - I C VCE(sat) - I C
10 1
COLLECTOR-EMITTER SATURATION

COMMON EMITTER COMMON EMITTER

BASE-EMITTER SATURATION

I C /I E =10 I C /I B =10
5 0.5
VOLTAGE VCE(sat) (V)
VOLTAGE VBE(sat) (V)

3 0.3

Ta=-55 C Ta=125 C
1 0.1

0.5 0.05 Ta=25 C

Ta=25 C Ta=-55 C
0.3 0.03
Ta=125 C

0.1 0.01
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

I C - VBE VCE - I B
COLLECTOR-EMITTER VOLTAGE VCE (V)

200 1.0
COMMON EMITTER
COLLECTOR CURRENT I C (mA)

I C =100mA

VCE =1V
I C =30mA
IC =10mA
IC =1mA

160 0.8

120 0.6
C

80 0.4
5 C
25 C
125

Ta=5
Ta=
Ta=

40 0.2
COMMON
EMITTER
Ta=25 C
0 0
0 0.4 0.8 1.2 1.6 0.001 0.01 0.1 1 10

BASE-EMITTER VOLTAGE VBE (V) BASE CURRENT I B (mA)

2002. 9. 12 Revision No : 1 3/4

 2N3904

Cob - VCB , C ib - VEB Pc - Ta

COLLECTOR POWER DISSIPATION PC (mW)

50 700
f=1MHz
30 Ta=25 C 600
C ib (pF)
CAPACITANCE Cob (pF)

500
10
400
5 C ib
300
3
C ob
200

1 100

0.5 0
0.1 0.3 1 3 10 30 0 25 50 75 100 125 150 175

REVERSE VOLTAGE V CB (V) AMBIENT TEMPERATURE Ta ( C)

V EB (V)

2002. 9. 12 Revision No : 1 4/4