SEMICONDUCTOR KN2222/A

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
B C

FEATURES
ᴌLow Leakage Current

A
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
ᴌLow Saturation Voltage N DIM MILLIMETERS
E A 4.70 MAX
K
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. G B 4.80 MAX
C 3.70 MAX
ᴌComplementary to the KN2907/2907A. D
D 0.45

J
E 1.00
F 1.27
G 0.85
H 0.45
H J _ 0.50
14.00 +
F K 0.55 MAX
MAXIMUM RATING (Ta=25ᴱ) F
L 2.30
M 0.45 MAX
RATING N 1.00
CHARACTERISTIC SYMBOL UNIT 1 2 3

C
L
KN2222 KN2222A

M
1. EMITTER
Collector-Base Voltage VCBO 60 75 V 2. BASE
3. COLLECTOR
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 5 6 V
TO-92
Collector Current IC 600 mA
Collector Power Dissipation
PC 625 mW
(Ta=25ᴱ)
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ

1996. 1. 28 Revision No : 0 1/3

 KN2222/A

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KN2222A ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
KN2222 VCB=50V, IE=0 - - 10
Collector Cut-off Current ICBO nA
KN2222A VCB=60V, IE=0 - - 10
Emitter Cut-off Current KN2222A IEBO VEB=3V, IC=0 - - 10 nA
KN2222 60 - -
Collector-Base
V(BR)CBO IC=10Ọ
A, IE=0 V
Breakdown Voltage KN2222A 75 - -

Collector-Emitter * KN2222 30 - -
V(BR)CEO IE=10mA, IB=0 V
Breakdown Voltage KN2222A 40 - -

Emitter-Base KN2222 5 - -
V(BR)EBO IE=10ỌA, IC=0 V
Breakdown Voltage KN2222A 6 - -
hFE(1) IC=0.1mA, VCE=10V 35 - -

KN2222 hFE(2) IC=1mA, VCE=10V 50 - -

KN2222A hFE(3) IC=10mA, VCE=10V 75 - -
DC Current Gain *
hFE(4) IC=150mA, VCE=10V 100 - 300
KN2222 30 - -
hFE(5) IC=500mA, VCE=10V
KN2222A 40 - -
KN2222 - - 0.4
VCE(sat)1 IC=150mA, IB=15mA
Collector-Emitter * KN2222A - - 0.3
V
Saturation Voltage KN2222 - - 1.6
VCE(sat)2 IC=500mA, IB=50mA
KN2222A - - 1.0
KN2222 - - 1.3
VBE(sat)1 IC=150mA, IB=15mA
Base-Emitter * KN2222A 0.6 - 1.2
V
Saturation Voltage KN2222 - - 2.6
VBE(sat)2 IC=500mA, IB=50mA
KN2222A - - 2.0
KN2222 IC=20mA, VCE=20V 250 - -
Transition Frequency fT MHz
KN2222A f=100MHz 300 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF

* Pulse Test : Pulse Width⏊300Ọ

S, Duty Cycle⏊2%.

1996. 1. 28 Revision No : 0 2/3

 KN2222/A

h FE - IC C ob - V CB
1k 12
VCE =10V I E =0
f=1MHz
500
DC CURRENT GAIN h FE

10

CAPACITANCE C ob (pF)
300
8

100 6

50 4
30
2

10 0
1 3 10 30 100 300 1k 1 3 10 30 100 200

COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)

V BE(sat) , V CE(sat) - I C Pc - Ta
10 700
COLLECTOR POWER DISSIPATION

I C /I B =10
5 600
SATURATION VOLTAGE

3
VBE(sat) ,VCE(sat) (V)

VBE(sat)
500
1
PC (mW)

0.5 400
0.3
300
0.1
VCE(sat) 200
0.05
0.03 100

0.01 0
1 3 10 30 100 300 1k 0 25 50 75 100 125 150 175

COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)

1996. 1. 28 Revision No : 0 3/3

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