GigaDevice

Semiconductor, Inc.

Flash Memory
Overview
NOR and NAND Flash Memory are the critical Non-Volatile Memory devices that store a digital device’s
configuration data. GigaDevice has a large Flash memory product portfolio that is specifically designed to
meet the different needs of various electronic applications, in terms of density, performance, reliability and
security, while providing small packages and low power consumption.

SPI Flash Memory Interface About Us

Serial Peripheral Interface (SPI) is the most popular bus GigaDevice, founded in Silicon Valley in 2004, is a leading
protocol for accessing the Flash Memory. It requires only 6 fabless company engaged in advanced memory technology
signals to communication between the controller and the and IC solutions. The company successfully completed their
memory, thus reducing the design complexity and offering IPO on the Shanghai Stock Exchange in 2016.
reduction in board space, power consumption and total
system cost. The small 8-pin package is ideal to meet the GigaDevice provides a wide range of high performance Flash
compact design requirement of modern electronics. Memory and 32-bit general purpose MCU products.
GigaDevice is among the companies that pioneered SPI NOR
Flash Memory and is currently one of the top three suppliers
in the world in this market segment with more than 1.8
billion units annual shipment.

Our Flash Memory portfolio offers the following features:

• Density: 512Kb (64KB) ~ 8Gb (1GB)
• Performance: 52MB/s ~ 104MB/s (with Quad SPI), 400MB/s (with Xccela™)
• Reliability: 100,000 P/E Cycles, 20-year Data Retention
• Security: UID, Array Protection, OTP area, RPMC
• Package: WLCSP, USON, WSON, SOP, TFBGA
• Power Consumption: 0.1uA DPD, 1uA Standby, 5mA Active Read,10mA Active Program/Erase

Note: All datasheets are available for download at www.gigadevice.com

 GigaDevice SPI NOR Flash delivers high- GigaDevice NAND Flash offers high-capacity
performance and security features necessary to storage and performance necessary for
meet the diverse design requirements of today’s multimedia data storage applications in
applications. networking, mobile devices, set-top boxes, data
cards, TVs and more.
Key Features
Key Features
Density: 512Kb to 1Gb
Density: 1Gb to 8Gb
Voltage: 1.8V, 2.5V, 3V and 1.65~3.6V
Voltage: 1.8V, 3V
Interface: Single, Dual and Quad SPI mode with DTR can
transfer data up to 640Mbit/s; ideal for Fast-boot or code Interface: Quad I/O for SPI NAND & x8/x16 I/O for SLC NAND
execution (XIP)
High-speed clock frequency: 120MHz for SPI and 40MBps
Flexible Memory Architecture: sector size - 4K Bytes, block for SLC NAND
size - 32/64K Bytes
Reliability: All SPI NAND products have an on-chip ECC
Power Mode: Zero Standby, Zero Deep Power Down and engine
Ultra Low Active Current
Enhanced access performance: With 2K- or 4K-Byte cache
Security: OTP area for customer key storage, Unique ID for for fast random read
individual device, advanced security with RPMC
Open NAND Flash Interface: ONFI1.0 and ONFI3.0
Wide Operating Temperature Range: -40°C - compliant
85°C/105°C/125°C
Package: WSON8 (6mm x 8mm)/TSOP48 (12mm x 20mm)

GigaDevice Flash Memory Portfolio

512Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb 128Mb 256Mb 512Mb 1Gb 2Gb 4Gb 8Gb
GD5FxGQ4U
GD9FUxG
GD25Q
3V GD25B
GD25R
GD25D
GD25S
GD25VQ
2.5V
GD25VE
GD5FxGQ4R
GD9FSxG
GD25LQ
GD25LB
1.8V GD25LH
GD25LD
GD25LE
GD25LT
GD25LR
1.65V GD25WD
~
3.6V GD25WQ

Future plans

GigaDevice Semiconductor, Inc. (Headquarter) U.S.A. Office

A12, USTB Techart Plaza, Xueyuan Road 30, Haidian District, Beijing, China 100 Century Center Ct., Suite 120 San Jose, CA 95112, USA
Tel: +86-10-82881666 Email: info@gigadevice.com Tel: +1-408-855-8336

www.gigadevice.com July 2018 Rev 1.0

 GigaDevice
Semiconductor, Inc.

GigaDevice
NAND Flash Memory
GigaDevice is one of the top three global suppliers for Serial Flash Memory and is currently dominating
the China market with the largest customer base. Our 38nm SLC NAND Flash products have been in
production for many years offering customers stability and reliability. This reliability has exceeded
customer expectations in applications such as industrial control, base stations, voice storage, network
communications, set-top boxes, OTT, smart TVs, printers, wearable devices, and many others. We also
allow for easy portability from other vendors with industry-standard packages, PIN definitions, registers
and instruction sets.

GigaDevice NAND Product Advantage

• Reliability: With billions of units shipped, GigaDevice • Stable Supply: GigaDevice continues to offer 2D SLC
provides reliable NAND product with our 38nm process, NAND products where many competitors have exited this
which can meet industrial, as well as automotive demands business. We will continue to provide users with long-term
availability by maintaining our strong relationships with
• Comprehensive Product Lines: GigaDevice has planned fabrication partners to ensure continuity of supply.
expanded capacities and packages to meet various
customer needs. Parallel NAND capacity is planned from • Application Support: Strong local presence of R&D and
1Gb to 64Gb. SPI NAND capacity is planned from 1Gb to FAE teams to support customers in the regions.
16Gb extending SPI NOR flash capacity with many in
pin-compatible packages. Overall, GigaDevice SPI FLASH
products from 512Kb to 16Gb can fit in a vast array of
embedded applications.
 Main features of NAND Flash

GD5F SPI NAND Product Highlights GD9F Parallel NAND Product Highlights

• Density: 1Gb to 8Gb • Density: 1Gb to 8Gb

• Voltage: 3V and 1.8V options • Voltage: 3V and 1.8V options

• Endurance: up to 100K P/E cycles • Endurance: up to 100K P/E cycles

• Data Retention: 10 years • Data Retention: 10 years

• Internal ECC: 8-bit • ECC Requirements: 4-bit or 8-bit

• Bus Width: x1/x2/x4 • Bus Width: x8 or x16 options

• Temperature Range: • Temperature Range:

Industrial (-40°C to 85°C) up to (-40°C to 105°C)

• Packages for SPI NAND • Packages for ONFI NAND

8-pin WSON 6 mm x 8 mm 48-pin TSOP 12 mm x 20 mm
8-pin LGA 6 mm x 8 mm 63-ball FBGA 9 mm x 11 mm
24-ball FBGA 6mm x 8mm • Compatible ONFI1.0 or ONFI3.0

Low Density NAND products with SLC technology

Product Voltage Page Size Bus Width Density Performance Read/Write

GD9FU1G 2.7v ~ 3.6v 2KB+128B X8/X16 1Gb 26.88MBps/ 3.28MBps
GD9FS1G 1.7v ~ 1.95v 2KB+128B X8/X16 1Gb 17.48MBps/ 2.96MBps
GD5F1GQ4R 1.7V to 2.0V 2KB+128B X1/X2/X4 1Gb 17.96MBps/ 2.79MBps
GD5F1GQ4U 2.7V to 3.6V 2KB+128B X1/X2/X4 1Gb 17.96MBps/ 2.79MBps
GD5F2GQ4R 1.7V to 2.0V 2KB+128B X1/X2/X4 2Gb 17.96MBps/ 2.79MBps
GD5F2GQ4U 2.7V to 3.6V 2KB+128B X1/X2/X4 2Gb 17.96MBps/ 2.79MBps

Note: Please contact the GigaDevice sales team for high density NAND products.

GigaDevice Semiconductor, Inc. (Headquarter) U.S.A. Office

A12, USTB Techart Plaza, Xueyuan Road 30, Haidian District, Beijing, China 100 Century Center Ct., Suite 120 San Jose, CA 95112, USA
Tel: +86-10-82881666 Email: info@gigadevice.com Tel: +1-408-855-8336

www.gigadevice.com July 2018 Rev 1.0

 GigaDevice
Semiconductor, Inc.

GigaDevice
Low Power NOR
Flash Memory
As consumers pay more and more attention to the battery life of electronic products, applications such as
health monitoring, Bluetooth connection, IoT, Wearable and Mobile Internet devices trend toward higher
and higher power consumption requirements. In response to these different application requirements,
GigaDevice has introduced the GD25*E and GD25*D series low-power consumption SPI NOR Flash Products
to extend battery life.

GD25*D series highlights include Zero Standby Current, Low active read, program and erase current.
Specifically, GD25WD series is a great product family designed for battery-hungry applications that not only
offers low power consumption but also wide voltage range.

GD25*E series is also a low power product with Zero Deep Power Down Current and Low active read
current.

Note: “*” represents different voltages

 Low Power Series Key Feature

GD25*D GD25VE

(Include GD25D, GD25LD and GD25WD) • Voltage: 2.1~3.6v

• GD25D Voltage: 2.7~3.6v • Density: 2Mb~64Mb

• GD25LD Voltage: 1.65~2.0v • Interface: Single, Dual, Quad I/O SPI

• GD25WD Voltage: 1.65~3.6v • Power Consumption:

• Density: 512Kb~8Mb Zero Deep Power Down Current: 0.1uA

• Interface: Single I/O, Dual Output SPI • Support Small Package and KGD wafer

• Power Consumption: GD25LE

Zero Standby Current: 0.1uA
• Voltage: 1.65~1.8v
(no need for DPD)
Read Current down to 3mA at 40MHz • Density: 512Kb~128Mb
Program/Erase current: <10mA • Interface: Single, Dual, Quad I/O SPI
• Support Smallest Molding Package USON8 1.5*1.5mm， • Power Consumption:
and KGD wafer Zero Deep Power Down Current
Read Current down to 5mA at 104MHz

• Support Smallest Package WLCSP and KGD wafer

Low Power Products List

Max Frequency
Low Power Series Product Series Voltage Density Status
(MHz)
GD25DxxC 2.7~3.6V 512Kb~8Mb 100(x1) 80(x2) MP
GD25*D GD25LDxxC 1.65~2.0V 512Kb~8Mb 50(x1) 40(x2) MP
GD25WDxxC 1.65~3.6V 512Kb~8Mb 100(x1) 80(x2) MP
GD25VE 2.1~3.6V 2Mb~64Mb 104(x1,x2,x4) MP
GD25*E
GD25LE 1.65~2.0V 512Kb~128Mb 104(x1,x2,x4) MP

GigaDevice Semiconductor, Inc. (Headquarter) U.S.A. Office

A12, USTB Techart Plaza, Xueyuan Road 30, Haidian District, Beijing, China 100 Century Center Ct., Suite 120 San Jose, CA 95112, USA
Tel: +86-10-82881666 Email: info@gigadevice.com Tel: +1-408-855-8336

www.gigadevice.com July 2018 Rev 1.0

Flash Memory GigaDevice

Packages
Semiconductor, Inc.

Unit: mm
SOP8 150mil USON8 1.5*1.5mm
Length(Normal) 4.90 Length(Normal) 1.50
T Width(Normal) 6.00 K Width(Normal) 1.50
Thickness(Max) 1.75 Thickness(Max) 0.50
Pitch(Normal) 1.27 Pitch(Normal) 0.40
SOP8 208mil USON8 3*2mm (0.45mm)
Length(Normal) 5.23 Length(Normal) 3.00
S Width(Normal) 7.90 E Width(Normal) 2.00
Thickness(Max) 2.16 Thickness(Max) 0.50
Pitch(Normal) 1.27 Pitch(Normal) 0.50
VSOP8 150mil USON8 3*3mm
Length(Normal) 4.90 Length(Normal) 3.00
M Width(Normal) 6.00 H Width(Normal) 3.00
Thickness(Max) 0.90 Thickness(Max) 0.60
Pitch(Normal) 1.27 Pitch(Normal) 0.50
VSOP8 208mil USON8 3*4mm
Length(Normal) 5.28 Length(Normal) 3.00
V Width(Normal) 7.90 N Width(Normal) 4.00
Thickness(Max) 1.00 Thickness(Max) 0.60
Pitch(Normal) 1.27 Pitch(Normal) 0.80
SOP16 300mil USON8 4*3mm
Length(Normal) 10.30 Length(Normal) 4.00
F Width(Normal) 10.35 A Width(Normal) 3.00
Thickness(Max) 2.75 Thickness(Max) 0.60
Pitch(Normal) 1.27 Pitch(Normal) 0.80
TSOP48 12*20mm USON8 4*4mm (0.45mm)
Length(Normal) 12.00 Length(Normal) 4.00
M Width(Normal) 20.00 Q Width(Normal) 4.00
Thickness(Max) 1.20 Thickness(Max) 0.50
Pitch(Normal) 0.50 Pitch(Normal) 0.80
DIP8 300mil WSON8 6*5mm
Length(Normal) 9.32 Length(Normal) 6.00
P Width(Normal) 7.94 W Width(Normal) 5.00
Thickness(Max) 3.50 Thickness(Max) 0.80
Pitch(Normal) 2.54 Pitch(Normal) 1.27
TFBGA-24ball 6*8mm (6*4ball array) WSON8 8*6mm
Length(Normal) 6.00 Length(Normal) 8.00
Z Width(Normal) 8.00 Y Width(Normal) 6.00
Thickness(Max) 1.20 Thickness(Max) 0.80
Pitch(Normal) 1.00 Pitch(Normal) 1.27
TFBGA-24ball 6*8mm (5*5ball array) WLCSP
Length(Normal) 6.00
B Width(Normal) 8.00 L
Depends on specific product
Thickness(Max) 1.20
Pitch(Normal) 1.00
LGA8 3*2mm Note:
Length(Normal) 3.00 1. The values provided are the normal values for length, width
8 Width(Normal) 2.00 and pitch, as well as the max values for thickness.
Thickness(Max) 0.50 2. The pictures are for reference only, always verify your
Pitch(Normal) 0.50 selection with the product data sheet.
 Package Type Thickness Density
3x2
USON 1.5x1.5mm 0.5mm 512Kb ~ 8Mb
1.5x1.5
USON 3x2mm 0.5mm 512Kb ~ 32Mb
WSON 6x5mm 0.8mm 16Mb ~ 128Mb
8x6 WSON 8x6mm 0.8mm 64Mb ~ 4Gb
6x5
SOP8 (5x8mm) 2.16mm 512Kb ~ 128Mb
VSOP8 (5x8mm) 1.0mm 512Kb ~ 128Mb
BGA 8x6mm 1.2mm 64Mb ~ 4Gb

3.0V Units:mm

512Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb 128Mb 256Mb 512Mb 1Gb 2Gb 4Gb
WSON8 6*8
LGA8 6*8
SOP8 150mil
SOP8 208mil
SOP16 300mil
VSOP8 208mil
TSSOP 173mil
USON8 1.5*1.5
USON8 3*2
USON8 3*3
USON8 3*4
USON8 4*4
WSON8 6*5
WSON8 8*6
TFBGA 24
DIP8 300mil
WLCSP

1.8V Units:mm

512Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb 128Mb 256Mb 1Gb 2Gb 4Gb
LGA8 6*8
WSON8 6*8
SOP8 150mil
SOP8 208mil
SOP16 300mil
VSOP8 150mil
VSOP8 208mil
TSSOP8 173mil
USON8 1.5*1.5
USON8 3*2
USON8 3*3
USON8 3*4
USON8 4*4
WSON8 6*5
WSON8 8*6
WLCSP
LGA8 3*2
LGA8 4*4
DIP8 300mil

GigaDevice Semiconductor, Inc. (Headquarter) U.S.A. Office

A12, USTB Techart Plaza, Xueyuan Road 30, Haidian District, Beijing, China 100 Century Center Ct., Suite 120 San Jose, CA 95112, USA
Tel: +86-10-82881666 Email: info@gigadevice.com Tel: +1-408-855-8336

www.gigadevice.com July 2018 Rev 1.0