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    SGT40N60NPFDPN - Datasheet: 40A, 600V Field Stop Igbt

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    This document provides data on a 40A, 600V field stop IGBT. It describes the features and specifications of the device, including maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a saturation voltage of 1.8V at 40A, fast switching speeds, and high input impedance.

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    SGT40N60NPFDPN - Datasheet: 40A, 600V Field Stop Igbt

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    57 views6 pages
    This document provides data on a 40A, 600V field stop IGBT. It describes the features and specifications of the device, including maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a saturation voltage of 1.8V at 40A, fast switching speeds, and high input impedance.

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    Datasheet

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    SGT40N60NPFDPN-Silan

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    This document provides data on a 40A, 600V field stop IGBT. It describes the features and specifications of the device, including maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a saturation voltage of 1.8V at 40A, fast switching speeds, and high input impedance.

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    57 views6 pages

    SGT40N60NPFDPN - Datasheet: 40A, 600V Field Stop Igbt

    Uploaded by

    Anonymous nC9gpUWP
    This document provides data on a 40A, 600V field stop IGBT. It describes the features and specifications of the device, including maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a saturation voltage of 1.8V at 40A, fast switching speeds, and high input impedance.

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    SGT40N60NPFDPN_Datasheet

    40A, 600V FIELD STOP IGBT

    DESCRIPTION

    SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum


    performance for induction Heating, UPS, SMPS and PFC application.

    FEATURES

     40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A


     Low conduction loss
     Fast switching
     High input impedance

    NOMENCLATURE

    ORDERING INFORMATION
    Part No. Package Marking Hazardous Substance Control Packing
    SGT40N60NPFDPN TO-3P 40N60NPFD Pb free Tube

    ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

    Parameter Symbol Ratings Units


    Collector to Emitter Voltage VCE 600 V
    Gate to Emitter Voltage VGE ±20 V
    TC=25°C 80
    Collector Current IC A
    TC=100°C 40
    Pulsed Collector Current ICM 120 A
    290 W
    Maximum Power Dissipation (TC=25C) PD
    2.32 W/C
    Operating Junction Temperature TJ -55～+175 C
    Storage Temperature Range Tstg -55～+175 C

    HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3


    http: //www.silan.com.cn Page 1 of 6
    SGT40N60NPFDPN_Datasheet
    THERMAL CHARACTERISTICS

    Parameter Symbol Ratings Units


    Thermal Resistance, Junction to Case (IGBT) RθJC 0.24 C/W
    Thermal Resistance, Junction to Case (FRD) RθJC 1.4 C/W
    Thermal Resistance, Junction to Ambient RθJA 35.5 C/W

    ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)

    Parameter Symbol Test conditions Min. Typ. Max. Units


    Collector to Emitter
    BVCE VGE=0V,IC=250uA 600 -- -- V
    Breakdown Voltage
    C-E Leakage Current ICES VCE=600V,VGE=0V -- -- 200 uA
    G-E Leakage Current IGES VGE=20V,VCE=0V -- -- ±500 nA
    G-E Threshold Voltage VGE(th) IC=250uA,VCE=VGE 4.0 5.0 6.5 V
    Collector to Emitter IC=40A,VGE=15V -- 1.8 2.7 V
    VCE(sat)
    Saturation Voltage IC=40A,VGE=15V,TC=125C -- 2.1 -- V
    Input Capacitance Cies VCE=30V -- 1850 --
    Output Capacitance Coes VGE=0V -- 180 -- pF
    Reverse Transfer Capacitance Cres f=1MHz -- 50 --
    Turn-On Delay Time Td(on) -- 18 --
    Rise Time Tr VCE=400V -- 80 --
    ns
    Turn-Off Delay Time Td(off) IC=40A -- 110 --
    Fall Time Tf Rg=10Ω -- 105 --
    Turn-On Switching Loss Eon VGE=15V -- 1.87 --
    Turn-Off Switching Loss Eoff Inductive Load, -- 0.68 -- mJ
    Total Switching Loss Est -- 2.55 --
    Total Gate Charge Qg -- 100 --
    VCE = 300V, IC=20A,
    Gate to Emitter Charge Qge -- 11 --
    VGE = 15V nC
    Gate to Collector Charge Qgc -- 52 --

    ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)

    Parameter Symbol Test conditions Min. Typ. Max. Units


    IF = 20A TC=25C -- 1.9 2.6
    Diode Forward Voltage Vfm V
    IF = 20A TC=125C -- 1.5 --
    Diode Reverse Recovery Time Trr IES =20A, dIES/dt=200A/μs -- 32 -- ns
    Diode Reverse Recovery Charge Qrr IES =20A, dIES/dt=200A/μs -- 74 -- nC

    HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3


    http: //www.silan.com.cn Page 2 of 6
    SGT40N60NPFDPN_Datasheet
    TYPICAL CHARACTERISTICS CURVE

    Figure 1. Typical output characteristics Figure 2. Typical output characteristics


    120 120
    TC=25°C TC=125°C 20V
    20V 15V
    100 100
    15V
    12V 12V
    80 80
    10V 10V

    60 60

    40 40 VGE=8V
    VGE=8V
    20 20

    0 0
    0 1.5 3.0 4.5 6.0 0 1.5 3.0 4.5 6.0

    Collector-Emitter voltage – VCE(V) Collector-Emitter voltage– VCE(V)

    Figure 3. Typical saturation voltage characteristic Figure 4. Transmission characteristic


    120 120
    Emitter in Emitter in
    100 common 100 common
    VGE=15V VGE=20V
    TC=25°C

    80 80

    60 TC=125°C 60
    TC=25°C
    40 40
    TC=125°C

    20 20

    0 0
    0 1 2 3 4 5 4 5 6 7 8 9 10 11 12

    Collector-Emitter voltage – VCE(V) Gate-Emitter voltage – VGE(V)

    Figure 5. Saturation voltage vs. VGE Figure 6. Saturation voltage vs. VGE
    20 20
    Emitter in Emitter in
    common common
    TC=25°C TC=125°C
    16 16

    12 80A 12 80A

    8 40A
    8 40A
    IC=20A IC=20A

    4 4

    0 0
    4 8 12 16 20 4 8 12 16 20

    Gate-Emitter voltage – VGE(V) Gate-Emitter voltage– VGE(V)

    HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3


    http: //www.silan.com.cn Page 3 of 6
    SGT40N60NPFDPN_Datasheet
    TYPICAL CHARACTERISTICS CURVE (CONTINUED)

    HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3


    http: //www.silan.com.cn Page 4 of 6
    SGT40N60NPFDPN_Datasheet
    TYPICAL CHARACTERISTICS CURVE (CONTINUED)

    Peak Power Impedance (°C/W)


    Collector Current - IC(A)

    PACKAGE OUTLINE

    TO-3P Unit:mm

    HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3


    http: //www.silan.com.cn Page 5 of 6
    SGT40N60NPFDPN_Datasheet
    Disclaimer :
     Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
    further notice! Customers should obtain the latest relevant information before placing orders and should verify that such
    information is complete and current.
     All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
    system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
    strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
    loss of body injury or damage to property.
     Silan will supply the best possible product for customers!

    Part No.: SGT40N60NPFDPN Document Type: Datasheet


    Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

    Rev.: 1.3
    Revision History:
    1. Modify the Max Value of Junction Temperature
    Rev.: 1.2
    Revision History:
    1. Modify the electrical characteristic of IGBT
    Rev.: 1.1
    Revision History:
    1. Add pin No.
    2. Modify the package outline of TO-3P
    Rev.: 1.0
    Revision History:
    1. First release

    HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3


    http: //www.silan.com.cn Page 6 of 6

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