NGD8201N, NGD8201AN

Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses http://onsemi.com
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required. 20 A, 400 V
VCE(on) = 1.3 V @
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications IC = 10 A, VGE . 4.5 V
• DPAK Package Offers Smaller Footprint for Increased Board Space C
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
G RG
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or RGE
Microprocessor Devices
• Low Saturation Voltage
E
• High Pulsed Current Capability
• These are Pb−Free Devices

Applications 1
• Ignition Systems DPAK
CASE 369C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) STYLE 7

Rating Symbol Value Unit

MARKING DIAGRAM
Collector−Emitter Voltage VCES 440 V
1
Collector−Gate Voltage VCER 440 V G YWW
Gate−Emitter Voltage VGE "15 V C NGD C
8201xG
Collector Current−Continuous IC 20 ADC E
@ TC = 25°C − Pulsed 50 AAC

Continuous Gate Current IG 1.0 mA Y = Year

WW = Work Week
Transient Gate Current IG NGD8201x = Device Code
(t ≤ 2 ms, f ≤ 100 Hz) 20 mA x = N or A
ESD (Charged−Device Model) ESD 2.0 kV G = Pb−Free Package

ESD (Human Body Model) ESD

R = 1500 W, C = 100 pF 8.0 kV ORDERING INFORMATION
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V Device Package Shipping†
Total Power Dissipation @ TC = 25°C PD 125 W NGD8201NT4G DPAK 2500 / Tape & Reel
Derate above 25°C 0.83 W/°C (Pb−Free)
Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C NGD8201ANT4G DPAK 2500 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum (Pb−Free)
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the †For information on tape and reel specifications,
Recommended Operating Conditions may affect device reliability. including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

March, 2013 − Rev. 11 NGD8201N/D
 NGD8201N, NGD8201AN

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)

Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy EAS mJ
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C 250
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C 200
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C 180
Reverse Avalanche Energy EAS(R) mJ
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C 2000

THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case RqJC 1.2 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 95 °C/W
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) TL 275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size (76x76x1.6mm board size, 60 sqmm 1 oz. Copper).
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 175°C 370 395 420 V
IC = 10 mA TJ = −40°C to 175°C 390 415 440
Zero Gate Voltage Collector Current ICES VGE = 0 V, VCE = 15 V TJ = 25°C 0.1 1.0 mA
TJ = 25°C 0.5 1.5 10 mA
VCE = 200 V, TJ = 175°C 1.0 25 100*
VGE = 0 V
TJ = −40°C 0.4 0.8 5.0
Reverse Collector−Emitter Clamp BVCES(R) TJ = 25°C 30 35 39 V
Voltage
IC = −75 mA TJ = 175°C 35 39 45*
TJ = −40°C 30 33 37
Reverse Collector−Emitter Leakage ICES(R) TJ = 25°C 0.05 0.1 1.0 mA
Current VCE = −24 V − TJ = 175°C 1.0 5.0 10
NGD8201N
TJ = −40°C 0.005 0.01 0.1
TJ = 25°C 0.05 0.2 1.0
VCE = −24 V −
TJ = 175°C 1.0 8.5 25
NGD8201AN
TJ = −40°C 0.005 0.025 0.2
Gate−Emitter Clamp Voltage BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V
Gate−Emitter Leakage Current IGES VGE = "5.0 V TJ = −40°C to 175°C 200 300 350* mA
Gate Resistor RG TJ = −40°C to 175°C 70 W
Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGE(th) TJ = 25°C 1.5 1.8 2.1 V

IC = 1.0 mA, VGE = VCE TJ = 175°C 0.7 1.0 1.3

TJ = −40°C 1.7 2.0 2.3*
Threshold Temperature Coefficient 4.0 4.6 5.2 mV/°C
(Negative)

*Maximum Value of Characteristic across Temperature Range.

3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

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ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage VCE(on) TJ = 25°C 0.95 1.15 1.35 V
IC = 6.5 A, VGE = 3.7 V − TJ = 175°C 0.7 0.95 1.15
NGD8201N
TJ = −40°C 1.0 1.3 1.4
TJ = 25°C 0.85 1.03 1.35
IC = 6.5 A, VGE = 3.7 V −
TJ = 175°C 0.7 0.9 1.15
NGD8201AN
TJ = −40°C 0.9 1.11 1.4
TJ = 25°C 0.95 1.25 1.45
IC = 9.0 A, VGE = 3.9 V − TJ = 175°C 0.8 1.05 1.25
NGD8201N
TJ = −40°C 1.1 1.4 1.5
TJ = 25°C 0.9 1.11 1.45
IC = 9.0 A, VGE = 3.9 V −
TJ = 175°C 0.8 1.01 1.25
NGD8201AN
TJ = −40°C 1.0 1.18 1.5
TJ = 25°C 0.85 1.15 1.4

IC = 7.5 A, VGE = 4.5 V TJ = 175°C 0.7 0.95 1.2

TJ = −40°C 1.0 1.3 1.6*
TJ = 25°C 1.0 1.3 1.6

IC = 10 A, VGE = 4.5 V TJ = 175°C 0.8 1.05 1.4

TJ = −40°C 1.1 1.4 1.7*
TJ = 25°C 1.15 1.45 1.7

IC = 15 A, VGE = 4.5 V TJ = 175°C 1.0 1.3 1.55

TJ = −40°C 1.25 1.55 1.8*
TJ = 25°C 1.3 1.6 1.9
IC = 20 A, VGE = 4.5 V − TJ = 175°C 1.2 1.5 1.8
NGD8201N
TJ = −40°C 1.4 1.75 2.0
TJ = 25°C 1.1 1.4 1.9
IC = 20 A, VGE = 4.5 V −
TJ = 175°C 1.2 1.5 1.8
NGD8201AN
TJ = −40°C 1.3 1.42 2.0
Forward Transconductance gfs IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 18 25 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 1100 1300 1500 pF
Output Capacitance COSS f = 10 kHz, VCE = 25 V TJ = 25°C 70 80 90
Transfer Capacitance CRSS 18 20 22
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

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 NGD8201N, NGD8201AN

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive) td(off) TJ = 25°C 6.0 8.0 10 mSec
VCC = 300 V, IC = 9.0 A TJ = 175°C 6.0 8.0 10
RG = 1.0 kW, RL = 33 W,
Fall Time (Resistive) tf VGE = 5.0 V TJ = 25°C 4.0 6.0 8.0
TJ = 175°C 8.0 10.5 14
Turn−Off Delay Time (Inductive) td(off) TJ = 25°C 3.0 5.0 7.0
VCC = 300 V, IC = 9.0 A TJ = 175°C 5.0 7.0 9.0
RG = 1.0 kW,
Fall Time (Inductive) tf L = 300 mH, VGE = 5.0 V TJ = 25°C 1.5 3.0 4.5
TJ = 175°C 5.0 7.0 10
Turn−On Delay Time td(on) TJ = 25°C 1.0 1.5 2.0
VCC = 14 V, IC = 9.0 A TJ = 175°C 1.0 1.5 2.0
RG = 1.0 kW, RL = 1.5 W,
Rise Time tr VGE = 5.0 V TJ = 25°C 4.0 6.0 8.0
TJ = 175°C 3.0 5.0 7.0

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 NGD8201N, NGD8201AN

TYPICAL ELECTRICAL CHARACTERISTICS

400 30
VCC = 14 V
350
TJ = 25°C VGE = 5.0 V

IA, AVALANCHE CURRENT (A)

25
300 RG = 1000 W
SCIS ENERGY (mJ)

20 L = 1.8 mH
250
TJ = 175°C
L = 3.0 mH
200 15

150
10
L = 10 mH
100
VCC = 14 V
5
50 VGE = 5.0 V
RG = 1000 W
0 0
0 2 4 6 8 10 −50 −25 0 25 50 75 100 125 150 175
INDUCTOR (mH) TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current
vs. Temperature
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

2.0 60
IC = 25 A VGE = 10 V 4.5 V
1.75 IC, COLLECTOR CURRENT (A)
50 5V 4V
IC = 20 A
1.5 TJ = 175°C
IC = 15 A 40
1.25
IC = 10 A 3.5 V
1.0 30
IC = 7.5 A
0.75 3V
20
0.5
2.5 V
10
0.25 VGE = 4.5 V

0.0 0
−50 −25 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 7 8
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 3. Collector−to−Emitter Voltage vs. Figure 4. Collector Current vs.

Junction Temperature Collector−to−Emitter Voltage

60 60
VGE = 10 V 4.5 V VGE = 10 V 4.5 V
4V 4V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

50 50
5V 5V
40 40
TJ = 25°C 3.5 V TJ = −40°C
3.5 V
30 30

20 3V 20
3V
10 10
2.5 V
2.5 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector Current vs. Figure 6. Collector Current vs.

Collector−to−Emitter Voltage Collector−to−Emitter Voltage

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 NGD8201N, NGD8201AN

TYPICAL ELECTRICAL CHARACTERISTICS

45 10000

COLLECTOR TO EMITTER LEAKAGE

VCE = 5 V
40
IC, COLLECTOR CURRENT (A)

1000
35 VCE = −24 V
30

CURRENT (mA)
100
25
20
10
TJ = 25°C
15 VCE = 200 V
10 1.0
5 TJ = 175°C
TJ = −40°C
0 0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 −50 −25 0 25 50 75 100 125 150 175
VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage

Current vs. Temperature

2.50 10000
GATE THRESHOLD VOLTAGE (V)

2.25
Mean Ciss
Mean + 4 s 1000
2.00
C, CAPACITANCE (pF)

1.75
Mean − 4 s Coss
1.50 100

1.25
Crss
1.00 10
0.75
0.50 1.0
0.25
0 0.1
−50 −25 0 25 50 75 100 125 150 175 0 5 10 15 20 25
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 9. Gate Threshold Voltage vs. Figure 10. Capacitance vs.

Temperature Collector−to−Emitter Voltage

12 12
VCC = 300 V
10 10 VGE = 5.0 V
tfall RG = 1000 W
SWITCHING TIME (ms)
SWITCHING TIME (ms)

IC = 9.0 A
8 8
tdelay L = 300 mH
tdelay
6 6
VCC = 300 V tfall
4 VGE = 5.0 V 4
RG = 1000 W
2 IC = 9.0 A 2
RL = 33 W
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Resistive Switching Fall Time vs. Figure 12. Inductive Switching Fall Time vs.
Temperature Temperature

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 NGD8201N, NGD8201AN

R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

100
Duty Cycle = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
D CURVES APPLY FOR POWER
P(pk) PULSE TRAIN SHOWN
READ TIME AT t1
0.1 t1
Single Pulse t2 TJ(pk) − TA = P(pk) RqJA(t)
DUTY CYCLE, D = t1/t2 For D=1: RqJC X R(t) for t ≤ 0.1 s
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t,TIME (S)

Figure 13. Minimum Pad Transient Thermal Resistance

(Non−normalized Junction−to−Ambient)
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

10

1 Duty Cycle = 0.5

0.2
D CURVES APPLY FOR POWER
0.1 P(pk)
PULSE TRAIN SHOWN
0.1 0.05 t1 READ TIME AT t1
0.02 t2 TJ(pk) − TA = P(pk) RqJC(t)

0.01 DUTY CYCLE, D = t1/t2

Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
t,TIME (S)

Figure 14. Best Case Transient Thermal Resistance

(Non−normalized Junction−to−Case Mounted on Cold Plate)

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 NGD8201N, NGD8201AN

PACKAGE DIMENSIONS

DPAK
CASE 369C
ISSUE D
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
4 5. DIMENSIONS D AND E ARE DETERMINED AT THE
L3 Z OUTERMOST EXTREMES OF THE PLASTIC BODY.
D 6. DATUMS A AND B ARE DETERMINED AT DATUM
DETAIL A H PLANE H.
1 2 3
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
GAUGE SEATING c2 0.018 0.024 0.46 0.61
L2 PLANE C PLANE D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L
A1 L 0.055 0.070 1.40 1.78
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 905 CW L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−

STYLE 7:
PIN 1. GATE
SOLDERING FOOTPRINT* 2. COLLECTOR
3. EMITTER
6.20 3.00 4. COLLECTOR
0.244 0.118
2.58
0.102

5.80 1.60 6.17

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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