Transistors

MSG33001
SiGe HBT type

For low-noise RF amplifier Unit: mm

0.33+0.05
–0.02 0.10+0.05
–0.02

■ Features 3

• Compatible between high breakdown voltage and high cutoff fre-

0.15 min.
0.80±0.05
1.20±0.05
quency

5˚
• Low-noise, high-gain amplification 0.23+0.05
–0.02
1 2

0.15 min.
• Suitable for high-density mounting and downsizing of the equip- (0.40) (0.40)
0.80±0.05
ment for Ultraminiature package 1.20±0.05
0.8 mm × 1.2 mm (height 0.52 mm) 5˚

0.52±0.03
■ Absolute Maximum Ratings Ta = 25°C

0 to 0.01

0.15 max.
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 9 V 1: Base
2: Emitter
Collector-emitter voltage (Base open) VCEO 6 V 3: Collector
Emitter-base voltage (Collector open) VEBO 1 V SSSMini3-F1 Package

Collector current IC 30 mA Marking Symbol: 5S

Collector power dissipation * PC 100 mW
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C
Note) *: Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12
mm × 0.8 mm.

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 9 V, IE = 0 1 nA
Collector-emitter cutoff current (Base open) ICEO VCE = 6 V, IB = 0 1 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 1 µA
Forward current transfer ratio hFE VCE = 3 V, IC = 3 mA 100 220 
Transition frequency fT VCE = 3 V, IC = 10 mA, f = 2 GHz 19 GHz
Forward transfer gain S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz 9.0 11.0 dB
Noise figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 1.4 2.0 dB
Collector output capacitance Cob VCB = 3 V, IE = 0, f = 1 MHz 0.3 0.6 pF
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: October 2004 SJC00299BED 1

MSG33001

PC  Ta IC  VCE hFE  IC
120
VCE = 3 V
IB = 80 µA 160
Collector power dissipation PC (mW)

12

Forward current transfer ratio hFE

70 µA

Collector current IC (mA)

80 60 µA 120

8 50 µA

40 µA 80

40 30 µA
4
20 µA 40

10 µA

0 0 0
0 40 80 120 0 2 4 6 0.01 0.1 1 10 100

Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA)

fT  I C Cob  VCB GP  I C
25 0.8 15
C (pF)

VCE = 3 V f = 1 MHz VCE = 3 V

f = 2 GHz f = 2 GHz
(Common base, input open circuited) ob

0.7
20
Transition frequency fT (GHz)

10
0.6

Power gain GP (dB)

15 5
Collector output capacitance

0.5

0.4
10 0

0.3
5 –5
0.2

0 0.1 –10
1 10 100 0 2 4 6 0.1 1 10 100

Collector current IC (mA) Collector-base voltage VCB (V) Collector current IC (mA)

S21e2  IC NF  IC S11 , S22

1.0 VCE = 3 V
VCE = 3 V VCE = 3 V IC = 10 mA
f = 2 GHz f = 2 GHz
6 0.5 2.0
12
Forward transfer gain S21e (dB)
2

Noise figure NF (dB)

8 4

0
1
∞
S11

4 2
S22

− 0.5 −2.0
0 0
1 10 100 0.1 1 10 100 −1.0

Collector current IC (mA) Collector current IC (mA)

2 SJC00299BED
 MSG33001

S21e2, S12e2  f
40
Reverse transfer gain S12e2 (dB)
Forward transfer gain S21e2,

20

S21e2
0

–20
S12e2

–40
0 1 2 3

Frequency f (GHz)

SJC00299BED 3
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Consult our sales staff in advance for information on the following applications:
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tions satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
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2003 SEP